STW57N65M5-4

N-channel 650 V, 0.056 typ., 42 A, MDmesh V Power MOSFET

in a TO247-4 package
Datasheet production data

Features
Order code

VDS @ TJmax

RDS(on)
max

ID

STW57N65M5-4

710 V

0.063

42 A

Higher VDS rating

1

Higher dv/dt capability

4
3

Excellent switching performance thanks to the

extra driving source pin

TO247-4

Easy to drive
100% avalanche tested
Figure 1. Internal schematic diagram
D(1)

Applications
High efficiency switching applications:
Servers
PV inverters
Telecom infrastructure
Multi kW battery chargers

G(4)

Description

Driver
source(3)

S(2)
AM10177v1

This device is an N-channel MDmesh V Power

MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics well-known
PowerMESH horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.

Table 1. Device summary

Order code

Marking

Package

Packaging

STW57N65M5-4

57N65M5

TO247-4

Tube

April 2013
This is information on a product in full production.

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www.st.com

14

Contents

STW57N65M5-4

Contents
1

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1

Electrical characteristics (curves)

............................ 6

Test circuits

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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.............................................. 9

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STW57N65M5-4

Electrical ratings

Electrical ratings
Table 2. Absolute maximum ratings
Symbol

Value

Unit

Gate- source voltage

25

ID

Drain current (continuous) at TC = 25 C

42

ID

Drain current (continuous) at TC = 100 C

26.5

IDM (1)

Drain current (pulsed)

168

PTOT

Total dissipation at TC = 25 C

250

11

960

mJ

dv/dt (2) Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

50

V/ns

- 55 to 150

150

Value

Unit

0.50

C/W

50

C/W

VGS

Parameter

IAR

Max current during repetitive or single pulse avalanche

(pulse width limited by TJMAX)

EAS

Single pulse avalanche energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)

Tstg
Tj

MOSFET dv/dt ruggedness

Storage temperature
Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD 42 A, di/dt = 400 A/s, peak VDS < V(BR)DSS, VDD = 400 V
3. VDS 520 V

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

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Electrical characteristics

STW57N65M5-4

Electrical characteristics
(TC = 25 C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS

Parameter
Drain-source
breakdown voltage

Test conditions
ID = 1 mA, VGS = 0

IDSS

Zero gate voltage

VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 C

IGSS

Gate-body leakage
current (VDS = 0)

Min.

Typ.

Gate threshold voltage VDS = VGS, ID = 250 A

RDS(on)

Static drain-source onVGS = 10 V, ID = 21 A

resistance

Unit

650

V
1
100

A
A

100

nA

0.056

0.063

Min.

Typ.

Max.

Unit

4200

pF

115

pF

pF

VGS = 25 V

VGS(th)

Max.

Table 5. Dynamic
Symbol

Parameter

Test conditions

Ciss

Input capacitance

Coss

Output capacitance

Crss

Reverse transfer
capacitance

Co(tr)(1)

Equivalent
capacitance time
related

VGS = 0, VDS = 0 to 520 V

303

pF

Co(er)(2)

Equivalent
capacitance energy
related

VGS = 0, VDS = 0 to 520 V

93

pF

RG

Intrinsic gate
resistance

f = 1 MHz open drain

1.3

Qg

Total gate charge

98

nC

Qgs

Gate-source charge

23

nC

Qgd

Gate-drain charge

VDD = 520 V, ID = 21 A,
VGS = 10 V
(see Figure 16)

40

nC

VDS = 100 V, f = 1 MHz,

VGS = 0

1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.

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STW57N65M5-4

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(V)

Voltage delay time

tr(V)

Voltage rise time

tf(i)

Current fall time

tc(off)

Test conditions
VDD = 400 V, ID = 28 A,
RG = 4.7 , VGS = 10 V
(see Figure 17)
(see Figure 20)

Crossing time

Min.

Typ.

Max. Unit

79

ns

ns

ns

14

ns

Min.

Typ.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Max. Unit

Source-drain current

42

ISDM

(1)

Source-drain current (pulsed)

168

VSD

(2)

Forward on voltage

1.5

ISD

ISD = 42 A, VGS = 0

trr

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

trr

Reverse recovery time

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

ISD = 42 A,
di/dt = 100 A/s
VDD = 100 V (see Figure 17)
ISD = 42 A,
di/dt = 100 A/s
VDD = 100 V, Tj = 150 C
(see Figure 17)

418

ns

40

528

ns

12

44

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 s, duty cycle 1.5%

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Electrical characteristics

2.1

STW57N65M5-4

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

AM14705v1

ID
(A)

100

is
ea )
ar (on
s DS
i
th R
in ax
n m
io by
t
ra d
pe te
O imi
L

10

10s
100s
1ms
10ms

Tj=150C
Tc=25C

Single
pulse
0.1
0.1

10

100

VDS(V)

Figure 4. Output characteristics

Figure 5. Transfer characteristics

AM14706v1

ID
(A)

VGS= 9, 10 V

100

AM14707v1

ID
(A)
VDS= 25 V

100

VGS= 8 V

80

80
VGS= 7 V

60

60

40

40
VGS= 6 V

20
0
0

16

12

20

Figure 6. Gate charge vs gate-source voltage

AM14708v1

VGS
(V)

VDS
(V)
500

VDD=520V

10

ID=21A

VDS

0
3

VDS(V)

400

300

200

100

9 VGS(V)

Figure 7. Static drain-source on-resistance

AM14709v1

RDS(on)
()
0.062

VGS=10V

0.060
0.058
0.056

0
0

6/14

20

40

60

80

0
100 Qg(nC)

0.054
0.052
0.05
0

DocID024559 Rev 1

10

20

30

ID(A)

STW57N65M5-4

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Output capacitance stored energy

AM14710v1

C
(pF)

AM14711v1

Eoss
(J)
18
16

10000
Ciss

14

1000

12
10

100

Coss

6
10

Crss

2
1
0.1

100

10

Figure 10. Normalized gate threshold voltage vs

temperature
AM04972v1

VGS(th)
(norm)

0
0

VDS(V)

100

200 300

400 500 600

VDS(V)

Figure 11. Normalized on-resistance vs

temperature
AM05501v2

RDS(on)
(norm)

ID=250A

2.1

1.10

ID= 21 A
1.9

VGS= 10 V

1.7

1.00

1.5
1.3

0.90

1.1
0.9

0.80

0.7
0.70
-50

-25

25

50

75 100

TJ(C)

Figure 12. Source-drain diode forward

characteristics
AM04974v1

VSD
(V)

0.5
-50 -25

25

50

75 100 125 TJ(C)

Figure 13. Normalized VDS vs temperature

AM10399v1

VDS
(norm)

TJ=-50C

1.08

1.2

ID = 1mA
1.06

1.0

1.04

0.8

1.02
TJ=25C

0.6
TJ=150C

1.00
0.98

0.4
0.96
0.2
0

0.94
0

10

20

30

40

50 ISD(A)

0.92
-50 -25

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25

50

75 100

TJ(C)

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Electrical characteristics

STW57N65M5-4

Figure 14. Switching losses vs gate

resistance (1)
AM11171v1

E (J)
800
Eon
700
600
500
400

Eoff

300
200
100
0
0

10

20

30

40

RG()

1. Eon including reverse recovery of a SiC diode.

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STW57N65M5-4

Test circuits

Test circuits
Figure 15. Switching times test circuit for
resistive load

Figure 16. Gate charge test circuit

VDD
12V

47k

1k

100nF
3.3
F

2200

RL

VGS

IG=CONST

VDD

100

Vi=20V=VGMAX

VD
RG

2200
F

D.U.T.

D.U.T.
VG

2.7k

PW
47k
1k

PW
AM01468v1

Figure 17. Test circuit for inductive load

switching and diode recovery times

D.U.T.

FAST
DIODE

AM01469v1

Figure 18. Unclamped inductive load test circuit

D
G

VD

L=100H

3.3
F

25

1000
F

VDD

2200
F

3.3
F

VDD

ID

G
RG

Vi

D.U.T.

Pw
AM01470v1

AM01471v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

Figure 20. Switching time waveform

&RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII

,G

VD

9GV

,G

7GHOD\RII
RII

IDM
9JV
9JV

RQ

ID
9JV,W


VDD

VDD

,G

9GV

9GV
7ULVH

AM01472v1

DocID024559 Rev 1

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7FU RVV RYHU



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Package mechanical data

STW57N65M5-4

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

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STW57N65M5-4

Package mechanical data

Table 8. TO247-4 mechanical data

mm.
Dim.
Min.

Typ.

Max.

4.90

5.00

5.10

A1

2.31

2.41

2.51

A2

1.90

2.00

2.10

1.16

b1

1.15

b2

0.20

0.59

0.66

c1

0.58

0.60

0.62

20.90

21.00

21.10

D1

16.25

16.55

16.85

D2

1.05

1.20

1.35

D3

24.97

25.12

25.27

15.70

15.80

15.90

E1

13.10

13.30

13.50

E2

4.90

5.00

5.10

E3

2.40

2.50

2.60

2.44

2.54

2.64

e1

4.98

5.08

5.18

19.80

19.92

20.10

3.50

3.60

3.70

1.29
1.20

P1

1.25

7.40

P2

2.40

5.60

2.50

2.60
6.00

6.15

9.80

10.20

6.00

6.40

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Package mechanical data

STW57N65M5-4
Figure 21. TO247-4 drawing

B$

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STW57N65M5-4

Revision history

Revision history
Table 9. Document revision history
Date

Revision

17-Apr-2013

Changes
First release.

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STW57N65M5-4

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