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E Pt1'-21)~
I of 11
ELECTRICAL ENGINEERING
Band11idtl1 of u
signal is
frequeoc~
a, V)
b
modulated
a. Zero
b. Tile frequen~ of tlte modulating signal
c. Twice tlte frequencr ol' modulating
Stgntd
cl lnfinil)
The balance equation
ra
:l,
.c
Work lunc!ion is
a. Mlllimum t~mpurruur~ at 11 hicb
thenmon enoissinn occurs
b. MJnimum excess energy needed for
therrmoo emissoon
c. Maxi mum temperature up to which
thcrmion emission occurs
d. Optilnum onergl
lor lhermion
emrssron
For n p-type semiconduc1or. Femu level
lies
a. In tile middle of the energy gap
b. Close to ~1c bottom of the conducuon
ban.d
c. Close to the lop of the conducloon band
d. Cluse to the top of ~Je valence bnnd
The force bel~>een a ~harg~ q :md a
grtluoded infinile conducting place kepi ay
n distanced form iL is gived by
ce
om
w
w
5.
.e
-1.
xa
a. AND gat~s
b. O.R gates
c. NAND gates
d, NOT gntes
Current dram form lhe power s upply 1s
lowest m wbiah one ol' the following
d1.gital JC logc f3mdy''
a TIL
b, EOL
c, MOS
i.l. CMOS
A MOSFET whb poT)' silicon gale IS
preferred 10 a MOSI'IIT 11itl1 aluminum
gate since in tlJc !irst eliSe the
a. Del'!ce becomes more t esistnot to
radutll on
b. Gate can be self-ahi!ned to source and
drain
c. Isolation bet11e~ adjacent de11ces is
beller
d. Gate leakage current os snl;lller
In
semoconductor wafer cleaning,
triChloroethylene is used to remo1e
a Dust p:ll'ticles from the surface
b, Grease from the surface
c. Impurities from 111thin lhe CI)'Stal
cl Moisture Iroon !he surface
J]
,,
4.76,1/'
c.
d
I0.
16trt,d'
In ~ soolrce-free lmcrerfect ~~~l<!<:tnc.
medium(spec1fied b~ loss UUlgeo ltan Q).
Maxwell's curl equat1oo can be written as:
or
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'u l II
Use mtegral error c~mpensatioo m tire
.l
S)'StC111
Scl~t til~
l?"'""' by
1,2 a11d 3
I :tud :!
c. I muP
d 2 and 1
For a fixed choo~ uf steady-state wloctty
dclwurrve output
error. the 118e
a_
or
vis llllllnl to
a I 1olts
b ;h<>hS
c. 3 volts
I Scnln~ttuuu
2. Undraped narurnl frequency
J . Dampin_g ~tn
tl
b. I :md~
I and)
= - ~
l_iC<lS 'fl
t.
I'=
.J_.
d.
r=JI.
xa
17
w
w
o(oJ
11 11
11-B
II l
1111
II
d 1 -~-
TI1e main reawn for ccunectlng a pulse
lrnn,..Connc 3l 11 output stuge n lhyri.'ilor
lnggmng tircuir is 10
or
II
ll
111 1
ti1J!GC1111g
or
!he
figw-,7
,rrndlhrl
:rQ mdnm
,.,./.1 radonu
d. Omdinn
1- ltn'
c. 1+Jt''
thynslt.n
II_,
>(11
a. 1+1!''
d18eM~IIIlle
=r'=
t/4
II
ra
(~
.e
,,
e. 2nnd J
ce
.c
16
4 \liltS
om
Cm>Vert il <quare
IVAVU
w.we
1111() n smc
19
IS
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J of l-1
~c:r-----~------ ~
o,
R
, -i:::::IH---!>1-------1
'
b. B
~~
c.
om
d. D
tl
20
!l,
'ii'
lG
ce
c.
r;;;
uL~,, x
.c
'::'Jl' :
L
b
"="
ra
-1
11
~B
V
... i\ll
1c1 ~
(dl
IV
w
w
(b)
23.
los~lcss
o ~''"
1-:-rn
fi.
21
f\t'
.e
-8 V
xa
I!
c.
llu~
A
314
7'J
..1 U71t
J l~
Jj.,.tt)'
.fix l01
314
tl km
t/ km
d. .fj, 1o' .~ I km
14.
1=, =- v,
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D. J\ndetl<Oi\ bridge
I. Measurement of rtsislunce
2- Hrgh Q inductors
om
29.
~ll'C\!17
u. l. 2 und 3
ra
26.
~- Meamemenl of frequency
4 II V cnpacitors
Low (J Inductors
B
A
D
a.
s
3
4
2
b.
4
3
2
c.
4
2
3
d.
3
5
4
2
Coosidcr lb., fo liO\\ ing. talo:ttu~IIIS [n
teped of a solnr cell
I. A obr cell i a large oreo pnjunQtion
2. In a solar cell the r-n JOnction is near
the surfaoc
s.
1 and 2
land 3
2 and 3
1.2nd 3
Which one ol' Ulc ronuwin,!i memmit:$ Is
vollllilc?
u. ROM
b. EPROM
c. SIALic RAM
d. None of lhe Jbovo
~btch Lnt I witl1 Lit U and select thl!
.c
a.
h
.:.
tL
J.i~
nl I.\
ce
25
:\0.
27
" l Olld 2
xa
~orrecl a i~Yer
w
w
.e
1 isll
A. Wi"n 13rilfg
H. J.-Vollmctcr methQ~I
C. Tn-1 ector meier
D. Wnlt-1\ournlctet
Listll
L Pow.:r
2. .Frequency
31.
b.
4
2
:>
w
.1 .
d.
T, isl J
t\. \Vico bridge
tf
t-1
respectively
O.hnd 1.0 ntJir~
b. I.Q nnd O.S rnJ s
D
5
1
l
5
4
3
1
4
MAtch I.INI I wilh Lisl H nnd select the
~.
28.
4. Jvb:cimum demand
:5. l;;nergy
13
. gtvcn
. "'
ft:cdbock system~
3. Plwc
.\
a. 2 and 3
d. I and 3
An electrical
32.
B. P~:a~ litnQ
(', Rise timo
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37.
Li>t I
A. Dual c oovc.rtOI'
13. DC chopper
2. 4 1(.;ro, )
C. Cyclo couvertur
0 , lnvelter
r. -[o~'ff/I!J,Jt-;'1]
1\
13
2
Lb1 n
l. Centet~l klh1 drivo
2. lncluctiun henting
:'1.
b.
1
2
1
2
c.
4
2
d.
lbe overage v alue of lhew:n~fonn
ll(l) = 4 cos 41 - 1 sin 51"
-l
33.
a.
b.
0
h. - (2111')
35.
d.
2/ ~r
netwotl ,.
.e
n. Z(O) -. zt.,,l
b. Z(O ) d(-')
3!>.
w
w
7.(tl) ,. %(oo )
36.
3
2
3
4
4
I
D
3
2
J
2
h1J.! s takmcot.s:
Disintt of c(ccl.ronic dc\'ie<!S is done
. nc
/)r
II;
b.
c. 3
d. 5
1'12
T/2
tort
c. A = D
J. a = 1
'
lf an RC tmpednce fimction, Z(l, h..
c..
ra
38.
(L 20 / :r
A recipt'OC:ll two
; ymmelrie"l if
t1t- Zu = z;l!
b. .i1 ~ I
rlrivc
ce
~.
xa
34.
Rollin~ mill
4. Electric:tl vehtcle
5. Sugr mills
A
ll
C'
4.
c.
om
,,
~P ( >r.;JJI ; ' )
.c
S of 14
l\lntcb List I (Power conve11ers) with Li~t
-II.
t-ori~
uddJ'\lS!>
be e.xeruted
0
llnrte
t111te
Ill)
(d)
''"""
(o)
u
flnl~
.c
ce
111\1\0
finite
nr.to
xa
ta)
47
l!ntte
ra
om
Til~
w
w
.e
46
49
COITCC17
a. I only
IJ l only
c. Both I and1
cl Nettber I uur 2
Copper bns u much low~r rl)Sistlvcly lhan
aluminum StO: hns a dielectric conslruu
of 3,Q and Xerogi.'l has a dielec1nc
consmnl of 2 I In order to r.:ducc rh~
InterconneCt dclny in VLSI dnzwts, what
should 11<: the he>'l oombinarion M ulctal
!llld llcll'Ctrt~ Juyer?
a C(lpper wtth St01
~}-----l
---
lh~
b 1\llllllllllllll SI 0 ;
c. t\lumtnfum wflh Xerogel
d Copper whh Xcrogel
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7 ul IJ
3. 11u:re IS RPQnlaneous- I>OI:trizat1on of
the material 11 hen it ts in the
ferruelt-etri.; SI:LIC.
Wl!icb of the s lillemcnl!! given ~lluvc ~re
c:ottc:ct2
th~
following <llltcmenl$
~Umc.:ming the ferromagnetic materials
t. Then: are en;;y ~nd hard mogne1i1,1Lil\n
dii~Lions 011 the f'c:J'J\Imoguoli<!. or)' tal.
2. Eddy um:nt lo.ses tre smn lk.- for
mnterjab having loll' electri.::d
C<Jnduc.tivity va lue~.
~ - All f-errom~gnetic n>11terjal$ can be
used at high fNquenci;;.
Wbieb of tbe s~'t"'n"'tb giwn abol'.: arb
c. 2 and 3
56.
corTecr'/
a, 1,2 nnd 3
n.e
j-;.w(w-j; )w' m)
.e
.:. 1= 1. 3
d. l=..t
Which one ol' th,e l'o llowlng i1< Ue copaci.ty
Q[ swndard telephone .:hanuel Qccupying
the trequooey range Qf JOO to '3~00 Hz Jur
nn octuDI S 'JI.' rotio ol' 1023?
u. .< lOOO bits per second
ll. ~06\Ml bil!t per ~ceond
c. 3471t200 'bits p<neccmd
d. 17SOU bits per second
Consider lite following slalcmenl~ 1elated
to tb<~fttrocllrieliiJIIJlri.'lk
L Fctroulou(.rie olltle occut below a
porl}.,ular temperalur~ wb.icb is
dif'ferent fur e.1th material.
2. In the fermeleclric stat.; dieleclnc
con>tnt is mudt larger than those uf
ordin:tay dic:le~trie mnt.criaiJt.
58.
w
w
54.
57_
xa
d. 9
1-Jow lntg (in tenns 11r "avelc:ngU1) ~h1uld
the hOlt- circuitoo [l).'> fless Unu be so ll!l to
oppell.r us ;m open circuit ot the input
lcnrtioals'/
b. /= ). 2
b.
c. .&
~ r = ..t 4
(:,
../3
b 3
53.
~~
55.
6',=1+-Na
Go.
s. =l-l~: r
Ntt
t: : -
ra
or
E(1.~)~.2C()s( to't- j;
d. I and-'
lf'N = number of atrom,;/m1 a
a = Polaris ability
~ = o~ohllepennilliVity of free space
ce
52
b. 1 nnd 2
c 2 :mc.l ~
tl I nnd 3
E-fleld
u 11nif'onn pbne ""ve
prt'i)Agaling ill diole<llric (lledium l
gi1en by
1.,2 and 3
b. 1 and 2
om
Consider
.c
51
'
d. e,
s,
=I+( :~
~ rp
i~
59.
a. Llne'arly polnnzed
b. Circularly pol~riZed
..:. lilliplicaUy polal'izcd
d. floriwntaUy polarized
Addiuon:tl inductance w ~~ lool circuit
of phll5t>- controlled ClOnncction feeding a
separately-excited DC moto,. iJ used 10
a. l.imil lhc po~ible ripple ~(>nt<!tll
b. Avc,1J !he possibilily of disc<mtinuuus
c.onUucLinn
" Improve the liue pOII'CI' factur
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Sol
64.
J
2.1+1
n, - -
ff
b. 2s-'- l
I
"-$-l
32 0
~ w
JT'
ce
b.
-r-
.:. -IOOW
d. 800,.
liS,
ra
2
I tI
a. -,r
2
Cons1der Ute LTI system wuh ullpclls.o
response !t(l) =- u(t).u >O, which one
of Jhc lblloll'lng g11'~ ~~~ rc.~ponse 10 the
SI!!OOI .~{1) =~ "u(t) ?
66.
,)'(t)., r e u(r)
w
w
62.
11. (lA
h. lOA
c. uscillulcs l>etwc"n 0 and lt1A
d Oscillnh:s boltween- IOA aud IOA
Consider the followmg srurcnrunL~
In alran~lbrmcr, pq >rnn con: IS ~~>C-d 1(1
d JIJOV
II' both tbe in puiS Ill a balI' udder are I. tbc
sum and CIJIT}' outpul nro. rcspccrivcly
c. 1.(1
1. 1
The numh\!r nf >1\llllrivinl logic 1\urctious
iua1-vanuhlc logic family is
a. ~
d
lj7
b. Ill
""
a. 0 ,()
h U,l
.e
d.
xa
a. J'(t) =<'"u(l )
h, J'(r) : J (I)~ ..,
c, J(t) = le ,(r)
C) cles
61.
b. I Wld2
c. 2 und 3
d. 3 0111)
II single.-phnsc dlode-br.dgc rectlroer is
connect~d to a load resistor of SOohm~.
The source voltng.e is v= 200sin ror.
whore w= 2r. A 50 mdlnns per second. n1e
om
f reqooncy
: 2
.c
I~
(!.
68.
d. 16
u
v' --c~
=:r-----,1
R
'r----J'----,
~o !)
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I) of
i \'.
lb~n
2 0 i$
equal to
a. 2jX
h. jX
69.
iX
tL 2j'X
only lbbil long instruction in a
rnad1ine code that IL~es immediat<>
addreo.-sing modein 8085 io
a. LXUil.:XX.X
b. LDAXXXX
n..
75.
will l>o
" I .S bil~fm~'S$age
b. 2.8 hitslmo:;;~~gc
c. 3.4 billl!n\c.>~~ge
d. :5.6 bits/message
ttiL'mOry
IJnit
76.
ROM
b, EPROM
c. Sl~l ic RAt\ I
d. l)~,.amlc RAM
b. 10.0 v
Il- l V
r.r
the e xdtntion
or mac:hlno
1 is
increased. ibeo
I. A I()C.'I I cil'l!ulnfing Clln','lll I is sd Up.
2. I, mugnoti7)n!! in n~\111'1: lor machine 2.
3. 1, tenci~ IQ reduceEu.
.J.. 'J11e terminal vol!llgcs J ocs not cthmgc,
Wl>icb uf Lhc Slllh:tncnt. gi1en ohul'e nrc
xa
77.
.e
~<liTOCl'/
c,
equaltpt\w
n. 2 nnd 3
b. 1.2 nnd 4
w
w
"- 1. 3 =d l
d. 1.2<md 3
A slrin{! m~ularor hns S umt~. l'hc voltage
across ~~ bouom-most is 25% or Ihe total
\'Ohll{lc. n 1e ~~~ ing efficiency is
. 25~.
h. 50""
d, ?Su
ln lo~d flow ~tudic. af > power syslom, o
d. 22.2 v
Ct\n!idt'l' lbe
toll011ing ~btemeni.'l
perl.tinins lQ "'min gnugeJ~.:
1. In metal strom gauge. the ba&ie etlect
is a change of resistance with giJ'aio
2. Gauge factor <if noetnl strai11 gauges is
larg~'f ~"'" ibalof cmiconduetol' s trllih
_gaugeS.
3. Gaqgc fnolor ot ~emicnnductnr ~troin
gang~:S v~ries with strain .
4. !\fetal s train gauges are in.sen1ilive lo
ternpll1'>1urc.
Which Of U1c Mtcwtnl' gi~etl ~b(m: is/are
C(lm:ct1
a.
I and2
b. 2 ltnly
c. 'I and 3
<t. 3 and 4
c, 8()".
1'3.
ra
n.
71.
ce
J. 'LI\oiPXX.\.."\
Whicb or t)le following.
no:ed fJeriudic refreshing?
c. Ull..D~'-""C\
70
.c
~.
om
~1\own
14
78.
UneeJ~ampleofcombinational
circuit is
a. Adder
79.
b. Counter
. Shill regi:~tcr
d. Flip-Hop
A !IU'e<: inputlllu1tiplc,xcr " ill re<1uire
a. A ruinimutu of lwo sel..:tliucs and oue.
()nlpul liuu
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B. Sprutg
C.
4. Chnrsc
5. Current
2 and 3
d. I Md 3
4
I
5
4
II
4
2
3
Three block$ G, Gt nnd C''l arc cunneeted
in some ft~;;hion .3uch tbnl ove(all IJ.. nsftr
futw.tion~ is G, G, (1' G,G' ) . 111e l)Joc:!;s
1-G,G,
are oonnccled iolhe following manner:
3 . G,. C::: with negative reedbaclr and
comhinatiQn llar;,l)ej w11h G~
h. G,, GJ with nugativc rceclbnck ~nd G..
in porJlltl
c. Gs. ~ iS '"'sc.~de 011d comhinolicm in
pnrollel with G1
d. G~,Clj in casc.1de and combination in
pnrnlle l with 0:
Tite uni1 in1puL~e restlOnse of the system
ce
t'
ra
SI
2
3
..
b.
om
l. lnductonoc
2 Cl1Jl"aitnncc
3. R~iSt3nl!C
h. I and 2
tl.
l)amp~r
D. l)i.;placl:tll1>nl
List n
.c
80.
ltJoll4
on Blo:ctrlcal Network) :md select the
correct answer;
l.i~ I
A. tvlai>$
_stepsl~J
.e
I, 5,6,4., 7
h 2.~. 1.4. S, 7. 6
.:. 3.2, IA,6.S, 7
d 2.7. 1 .4~. $,6
Wl1ich of the lb llowln!! propc:rtic:>~ doo:s lhe
SiO, Ioyer exhibit fill' usc in JC
filhrjc lion1
L l t provides proh!ctive ~onductma
Ioyer on thesilioon surl~ce.
2. II pro,ides surfac" p~ssVlllion
3. ll soves a an insulator on the silicon
surfoet>.
-4. 11 provitlo~ suprJort for ll lC
compnnot11s to be l':tbrrClltetlll"c:r it.
Select the COI'TCCI nnswe~ ru;ins tho lde
givtm below:
a. 2 nnd J
ss.
dcscrib<:d by
v(n)- y( n- 1):,\'(11)-X(n - 11
b.
b. 11(n)
d. 0
86.
83.
11hns..
shift of
. -450
IJ.
c.
"and~
c. I and~
d. land 2
Mttt~h List 1 {Element of MecllaniiUll
Sytcm) wltb List ll (/lnalogowl Elomrnt
S(p)
c, I
w
w
82.
~.2.
xa
7. P hoto rcsistlrlppintt
nu:: co.rrccl .sequence: of these process
-9()
4~~
d. I)(}"
87.
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91
o.
b.
c
(l
Jl+ '
'~
c_
tf. +Fir!
tit
/It''rf! +V
l11~
ce
..,
IDV
t),V )(/i:, o
o,
!J.
tn u
vr
\foliage~
88
_ .. 0. v xE' .. u
om
v F .. u;"f'><l~~ o
.c
II of II
An elemic J'ield In 11 oharsed medium 1ith
a timevnr'iing. mngneric field has
b. I R'
r. I R'
d I R'
Asseri ion (A):
ra
94
Th~
r.:ioo of ronvcrgcnce
(l
c: 25A
<.1 333A
xa
b 05A
.e
1 im
12 .am u l
w
w
IV
c 8mA
d 4mi\
The tor= I sequ<nce of the loUo11 lng
li~r
WhiCh
con1~m
any
(A ):
In
Uti
inrriostc
(R):
In
an
l ntrillSlc
om
IU2
ra
'18.
or
ce
'11
Ill I
11 ol 1-1
b. Dotlt A and Rare tudividually ttue but
R l$ n()t the conuct c~plnnatiun ()fA
c. 1\ IS tnte but R IS false
d. A l$ ll!lse but R is true
Assertion tAJ: Cotona c:wses interfer<.'n cc
wt th ne.i~hh!)ring communitntion circuits,
Reoson (R): Owing 10 distonion ot wave
form, predominatt~y tl1ird hsnnonics are
fnh'Otlucdl inti' tho ll'ntl~mis.~ion lim>
a. Both A nnd R are mdi,idnolly tntc and
R is tbe com:ct explanation of A
b. Doth A. and R lire UJdividually true. but
R IS not lhofCorroct explanation A
c. 1\ 1s true but R is fulse
d_ A i~ false but R is true
As~rtion (A): A scri~s-gonerator is usc'<l
.c
ch:lfaotcrislic.
IU3.
w
w
.e
xa
w
100.
d 1/ -/3
IU4.
13ull.t
b. :
109.
ports
b. Timing. and w ntrol block. ALU and
rcgasl.en~
l>~"eli:rAbly
be qqu l to
'I"
110,
I U.
ra
L Ti
2. Elg)lt
3. Si:t
-t Pour
5. rwo
Wlu~h ofthe above nrc correct'!
"- l1111d 3
h. 3 nnd '
.:. 2 aml:1
d. 1. 2 nnd 4
Whidt methods can be used fot Ute
moasur mcut of three pltruw
for :m
unbalnoced loDd2
I. 'lltree voftmol'e "'
2. 'two voltmeters and one anm1eter
:.. Two 'V~Llmeter'
4. 01ll: wrcUmet.:t
S<lle>:t the t<>~t answer u..<ting lh"' code~
given bclull ;
n. 1 onl y
b. 3 unly
c.. 1 31!d 3
d, Any ouo of 1,1 :l or 4
The t~>sitnae <~i o cituuit i8 found b)
mcasurinil the currenl Oowing and the
power fed into the circuit. The limiting
error of po1v.:r and current mtosun:mcn~
.c
106
4.5~
e, .::: :2(o
d. - 0.(143"
The Central Procasing !)nit of computer
includes whitb o( Ule fullowiug?
a. Timlug and coutrol block. m.:ruol)' und
ce
a. ,. 0.4S"u
om
lOS
w
w
w
lOS
1 .2-5%~
respectively,
Which one of lht: follnwing i' lh~ limit ina
error in ~te rneuwremlltll orrcsistonec1
" 1-2-3-4
b. 14-J-2
1!.
13-2--1
d. 13--1-2
I"'"'"'
.e
107,
xa
11.2.
,,r
c.o n-ee~?
I and 2
b. 2md 3
n,
c. 1 ood 3
d, l , 2 and 3
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113.
C. Gru; turbino
0. Hydro
l'.ist II (A pplk:ll inn )
I. Base lod
d. 1,2 ond 3
I
It
l, Tempert11re of diff11~ion
3
2
4
I
'
~
I
2
l
2
-1
3
Match List l with List Jl and select tho:
oorlect uswcr.
Lii l (Protll<:linn Schcmt)
A. Difli:renl in I protection
!;.
2. l)ifi\VJion lime
~- Conccnlrarlon of the source
Select lhe eom:ct answer using the oode!f
given bGiow:
a, 2and 3
b. I and~
.c
'b.
ce
(L
I 14
c.
d. I nnd "
liS.
.~
...
A
I
ra
('
B
-1
2
:>
c. 2 lltld 3
116
d. L2nnd :l
l'he devices given helo" are used I>)
microlmc.,.sors ond oricrt)c(lntl'l) lf<:r;s
llo11s.
u. 1.2 and 3
b. 1.2oud ~
c. l, 3 and+
.e
~n8\ver
,-\
c<Jrrtc!'l
d. 2.3 and 4
119.
lrt~nsducer form
u, Strain guuge
b. LVDT
c. Dinph>rm
;>,
s 2
1
c.
1
2
3
s
s
d.
2
I
4
Which <If the ti-lllowins. methodi uould be
<L>t:tl l'or 110 Op<:rntion i11 an 8085
m i<"'OPIV0<-1!S0r?
L Hnnd Sluklng
2. lntctrUpting
w
w
115.
c herloadlns
*nir>-
llops.
xa
s.
floP".
2. \. [6-bil ripple i!I)Ulll<:t l'e (jUU'1:11
-t inter-rum
I only
2. Pllll>c lo ground
3 . S hort circuit
om
117.
2. Stand-hy
3. Ua.5c load o peak IIJad
-1 . Pe:~k food
A
11 "' 14
3. PORTS
d.
12\1
C~paci1~ncc lmnsducer
h. 3 Ill 30 1\ffiz
c. ~ to .~0 GHz
d. l o-' to
1(1'
Gitl
L RAl\t
l. EPROM
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