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PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
FEATURES
Low on-state resistance
RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 m MAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss: Ciss = 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)
3 : Source 2
4 : Gate 2
5, 6: Drain 2
PART NUMBER
PACKAGE
PA2756GR
Power SOP8
6.0 0.3
4.4
0.8
+0.10
0.05
5.37 MAX.
0.15
0.05 MIN.
ORDERING INFORMATION
1.44
1.8 MAX.
0.5 0.2
0.10
+0.10
0.05
0.12 M
VDSS
60
VGSS
20
ID(DC)
4.0
ID(pulse)
16
PT1
1.6
PT2
2.0
Channel Temperature
Tch
150
Storage Temperature
Note1
Note2
Note1
Note1
Tstg
55 to +150
Note3
IAS
4.0
Note3
EAS
1.6
mJ
EAR
1.6
mJ
Note4
EQUIVALENT CIRCUIT
Drain 1
Body
Diode Gate 2
Gate 1
Gate
Protection
Diode
Drain 2
Source 1
Gate
Protection
Diode
Body
Diode
Source 2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005
PA2756GR
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
VDS = 60 V, VGS = 0 V
10
IGSS
VGS = 18 V, VDS = 0 V
10
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
| yfs |
VDS = 10 V, ID = 2.0 A
2.0
RDS(on)1
VGS = 10 V, ID = 2.0 A
85
105
RDS(on)2
106
150
Note
Note
2.0
Input Capacitance
Ciss
VDS = 10 V
260
pF
Output Capacitance
Coss
VGS = 0 V
65
pF
Crss
f = 1 MHz
20
pF
td(on)
VDD = 30 V, ID = 2.0 A
14
ns
tr
VGS = 10 V
ns
td(off)
RG = 10
80
ns
30
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
QG
VDD = 48 V
nC
QGS
VGS = 10 V
nC
QGD
ID = 4.0 A
1.5
nC
VF(S-D)
IF = 4.0 A, VGS = 0 V
0.9
trr
IF = 4.0 A, VGS = 0 V
24
ns
Qrr
22
nC
Note
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
VDS
ID
Starting Tch
= 1 s
Duty Cycle 1%
PG.
50
10%
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
BVDSS
RL
VDD
td(on)
tr
ton
td(off)
tf
toff
PA2756GR
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
2.8
PT - Total Power Dissipation - W
100
80
60
40
20
Mounted on ceramic
substrate of
2000 mm2 x 2.2 mm
2.4
2 units
1 unit
1.6
1.2
0.8
0.4
0
0
0
20
40
60
80
20
40
60
80
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100
PW = 100 s
10
ID(DC)
1 ms
1
RDS(on) Limited
(at VGS = 10 V)
0.1
10 ms
100 ms
of 2000 mm x 2.2 mm
0.01
0.01
0.1
10
100
ID - Drain Current - A
ID(pulse)
Rth(ch-A) = 78.1C/W
100
10
0.1
100
10 m
100 m
10
100
1000
PW - Pulse Width - s
PA2756GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
20
VDS = 10 V
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
10
15
VGS = 10 V
10
4.0 V
TA = 40C
25C
75C
125C
150C
1
0.1
0.01
0.001
0.0001
1
0.5
-50 -25
25
50
1.5
0
75 100 125 150 175
10
VDS = 10 V
Pulsed
TA = 40C
25C
75C
125C
150C
0.1
0.01
0.01
0.1
200
Pulsed
180
160
140
VGS = 4.0 V
100
10 V
60
10
100
10
100
ID - Drain Current - A
200
Pulsed
180
160
ID = 4.0 A
2.0 A
0.8 A
140
120
100
80
60
0
9 10 11 12
ID - Drain Current A
0.1
2.5
80
VDS = 10 V
ID = 1 mA
120
3
VGS(off) - Gate Cut-off Voltage - V
200
1000
ID = 2.0 A
Pulsed
180
160
140
VGS = 4.0 V
120
100
10 V
80
60
40
Ciss
100
Coss
10
Crss
VGS = 0 V
f = 1 MHz
20
1
0
-50 -25
25
50
0.1
SWITCHING CHARACTERISTICS
1000
60
VDD = 30 V
VGS = 10 V
RG = 10
100
100
td(off)
tf
td(on)
10
tr
12
ID = 4.0 A
VDD = 48 V
30 V
12 V
50
40
10
8
30
6
VGS
20
10
4
2
VDS
1
0.1
10
0
0
100
100
Pulsed
10
QG - Gate Charge - nC
ID - Drain Current - A
10
PA2756GR
VGS = 10 V
4.0 V
0V
0.1
VGS = 0 V
di/dt = 100 A/s
100
10
0.01
0
0.5
1.5
0.1
10
100
PA2756GR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
10
IAS = 4.0 A
EAS = 1.6 mJ
1
VDD = 30 V
RG = 25
VGS = 200 V
Starting Tch = 25C
80
60
40
20
0.1
0
10
100
1m
10 m
25
50
75
100
125
150
L - Inductive Load - H
VDD = 30 V
RG = 25
VGS = 200 V
IAS 4.0 A
100
PA2756GR
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1