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Of these four variables V1, V2, i1 and i2, two can be selected as
independent variables and the remaining two can be expressed in terms
of these independent variables. In Hybrid parameters the input current i 1
and output Voltage V2 are takes as independent variables, the input
voltage V1 and output current i2 can be written as
V1 = h11 i1 + h12 V2
i2 = h21 i1 + h22 V2
The four hybrid parameters h11, h12, h21 and h22 are defined as follows.
BJT (Transistor)
1.BJT is a Bipolar device
2. It consumes large power
compared to FET
3. BJT function as regulators of
currents as small current is
regulating a large current.
4. the Bipolar transistor is liable
for thermal runaway due to a
negative temperature coefficient.
5. FETs have los-medium gain.
A power MOSFET is a specific type of metal oxide semiconductor fieldeffect transistor (MOSFET) designed to handle significant power levels. The design
of power MOSFETs was made possible by the evolution of CMOS technology,
developed for manufacturing integrated circuits in the late 1970s. The power
MOSFET shares its operating principle with its low-power counterpart, the lateral
MOSFET.
The metaloxidesemiconductor field-effect transistor (MOSFET, MOSFET, or MOS FET) is a type of transistor used for amplifying or switching
electronic signals.
Although the MOSFET is a four-terminal device with source (S), gate (G),
drain (D), and body (B) terminals, [1] the body (or substrate) of the MOSFET is often
connected to the source terminal, making it a three-terminal device like other fieldeffect transistors.
12. Define intrinsic standoff ratio.
It is the ratio of RB1 to the sum of RB1 and RB2. It can be expressed as = RB1/
(RB1+RB2) or = RB1/RBBO. The typical range of intrinsic standoff ratio is from
0.4 to 0.8.