NGTB15N120IHWG

Product Preview
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features

Extremely Efficient Trench with Fieldstop Technology

Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
This is a PbFree Device

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15 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.36 mJ
C

Typical Applications

Inductive Heating
Consumer Appliances
Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collectoremitter voltage

VCES

1200

Collector current
@ TC = 25C
@ TC = 100C

IC

Pulsed collector current, Tpulse limited

by TJmax, 10 ms Pulse, VGE = 15 V
Diode forward current
@ TC = 25C
@ TC = 100C

A
30
15

ICM

60

IF

A
30
15

Diode pulsed current, Tpulse limited

by TJmax

IFM

60

Gateemitter voltage
Transient Gateemitter voltage
(Tpulse = 5 ms, D < 0.10)

VGE

$20
$25

Power Dissipation
@ TC = 25C
@ TC = 100C

PD

TO247
CASE 340AL

MARKING DIAGRAM

15N120IH
AYWWG
W

278
139

Operating junction temperature range

TJ

40 to +175

Storage temperature range

Tstg

55 to +175

Lead temperature for soldering, 1/8

from case for 5 seconds

TSLD

260

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

A
Y
WW
G

= Assembly Location
= Year
= Work Week
= PbFree Package

ORDERING INFORMATION
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2014

September, 2014 Rev. P0

Device

Package

Shipping

NGTB15N120IHWG

TO247
(PbFree)

30 Units / Rail

Publication Order Number:

NGTB15N120IHW/D

NGTB15N120IHWG
THERMAL CHARACTERISTICS
Symbol

Value

Unit

Thermal resistance junctiontocase

Rating

RqJC

0.54

C/W

Thermal resistance junctiontoambient

RqJA

40

C/W

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

VGE = 0 V, IC = 500 mA

V(BR)CES

1200

VGE = 15 V, IC = 15 A
VGE = 15 V, IC = 15 A, TJ = 175C

VCEsat

2.10
2.30

2.45

VGE = VCE, IC = 250 mA

VGE(th)

4.5

5.5

6.5

Collectoremitter cutoff current, gate

emitter shortcircuited

VGE = 0 V, VCE = 1200 V

VGE = 0 V, VCE = 1200 V, TJ = 150C

ICES

0.5
2.0

mA

Gate leakage current, collectoremitter

shortcircuited

VGE = 20 V, VCE = 0 V

IGES

100

nA

Cies

2615

pF

Coes

65

Cres

50

Gate charge total

Qg

120

Gate to emitter charge

Qge

24

Qgc

56

TJ = 25C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V

td(off)

130

tf

185

Eoff

0.36

mJ

TJ = 150C
VCC = 600 V, IC = 15 A
Rg = 10 W
VGE = 0 V/ 15V

td(off)

145

ns

tf

240

Eoff

0.65

mJ

VGE = 0 V, IF = 15 A
VGE = 0 V, IF = 20 A, TJ = 175C

VF

2.0
3.3

2.7

STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
Collectoremitter saturation voltage
Gateemitter threshold voltage

DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance

VCE = 20 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 600 V, IC = 15 A, VGE = 15 V

Gate to collector charge

nC

SWITCHING CHARACTERISTIC, INDUCTIVE LOAD

Turnoff delay time
Fall time
Turnoff switching loss
Turnoff delay time
Fall time
Turnoff switching loss

ns

DIODE CHARACTERISTIC
Forward voltage

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NGTB15N120IHWG
TYPICAL CHARACTERISTICS

60
11 V

VGE = 13 V
to 20 V

50

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

60

40
30
10 V

20
9V

10

7V

TJ = 25C

VGE = 15 V
to 20 V

40
30

11 V

20

10 V
7V

10

9V
8V

0
0

VCE, COLLECTOREMITTER VOLTAGE (V)

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

60

60

50

IC, COLLECTOR CURRENT (A)

TJ = 40C

VGE = 15 V
to 20 V
13 V

40
30
20
11 V
10

10 V
9V

0
0

50
40
30
TJ = 150C

20

TJ = 25C
10
0
0

9 10 11 12 13 14

VCE, COLLECTOREMITTER VOLTAGE (V)

VGE, GATEEMITTER VOLTAGE (V)

Figure 3. Output Characteristics

Figure 4. Typical Transfer Characteristics

3.50

10000
IC = 30 A

3.00
2.50

Cies

IC = 15 A

2.00
IC = 5 A
1.50
1.00

C, CAPACITANCE (pF)

IC, COLLECTOR CURRENT (A)

50

13 V

8V

VCE, COLLECTOREMITTER VOLTAGE (V)

TJ = 150C

1000

100
Coes
Cres

10

0.50
0.00
75 50 25

TJ = 25C

1
0

25

50

75 100 125 150 175 200

10

20

30

40

50

60

70

80

TJ, JUNCTION TEMPERATURE (C)

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 5. VCE(sat) vs TJ

Figure 6. Typical Capacitance

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90 100

NGTB15N120IHWG
TYPICAL CHARACTERISTICS

16
VGE, GATEEMITTER VOLTAGE (V)

IF, FORWARD CURRENT (A)

60
50
TJ = 25C

40
30
20

TJ = 150C

10
0
0.5

1.0

1.5

2.0

2.5

3.0

3.5

10
8
6
4

VCE = 600 V
VGE = 15 V
IC = 15 A

2
0

4.0

20

40

60

80

100

VF, FORWARD VOLTAGE (V)

QG, GATE CHARGE (nC)

Figure 7. Diode Forward Characteristics

Figure 8. Typical Gate Charge

0.7

120

140

1000
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W

0.5

Eoff

VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 10 W

SWITCHING TIME (ns)

0.6
SWITCHING LOSS (mJ)

VCE = 600 V

12

0
0

0.4
0.3
0.2

tf

td(off)

0.1
0
0

20

40

60

80

100

120

140

100

160

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (C)

TJ, JUNCTION TEMPERATURE (C)

Figure 9. Switching Loss vs. Temperature

Figure 10. Switching Time vs. Temperature

160

1000
VCE = 600 V
VGE = 15 V
TJ = 150C
Rg = 10 W

1.6
1.4
1.2

VCE = 600 V
VGE = 15 V
TJ = 150C
Rg = 10 W

SWITCHING TIME (ns)

1.8

SWITCHING LOSS (mJ)

14

Eoff

1.0
0.8
0.6
0.4

tf
td(off)

0.2
0
5

10

15

20

25

30

35

100

40

10

15

20

25

30

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

Figure 11. Switching Loss vs. IC

Figure 12. Switching Time vs. IC

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35

40

NGTB15N120IHWG
TYPICAL CHARACTERISTICS
1.6

1000
VCE = 600 V
VGE = 15 V
TJ = 150C
IC = 15 A

SWITCHING TIME (ns)

SWITCHING LOSS (mJ)

1.4
1.2
1.0
0.8

Eoff

0.6
VCE = 600 V
VGE = 15 V
TJ = 150C
IC = 15 A

0.4
0.2
0
5

15

25

35

45

55

65

75

td(off)
tf

100
5

85

35

45

55

65

Figure 13. Switching Loss vs. Rg

Figure 14. Switching Time vs. Rg

75

85

1000
VGE = 15 V
TJ = 150C
IC = 15 A
Rg = 10 W

0.8
0.7

SWITCHING TIME (ns)

SWITCHING LOSS (mJ)

25

Rg, GATE RESISTOR (W)

0.9

Eoff

0.6
0.5
0.4
0.3

VGE = 15 V
TJ = 150C
IC = 15 A
Rg = 10 W

0.2
0.1
0
350

400

450

500

550

600 650

700

750

tf

td(off)
100
350

800

400

450

500

550

600 650

700

750 800

VCE, COLLECTOREMITTER VOLTAGE (V)

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 15. Switching Loss vs. VCE

Figure 16. Switching Time vs. VCE

1000

1000
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

15

Rg, GATE RESISTOR (W)

100
50 ms
10

dc operation
100 ms

1
Single Nonrepetitive
Pulse TC = 25C
Curves must be derated
linearly with increase
in temperature

0.1

0.01
1

10

100

1 ms

100

10

VGE = 15 V, TC = 125C

1
1000

10k

10

100

1000

10k

VCE, COLLECTOREMITTER VOLTAGE (V)

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 17. Safe Operating Area

Figure 18. Reverse Bias Safe Operating Area

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NGTB15N120IHWG
TYPICAL CHARACTERISTICS
1550

70

1500

60
TC = 110C

1450
V(BR)CES (V)

Ipk (A)

50

TC = 80C

40

VCE = 600 V, TJ 175C, Rgate = 10 W,

30 V = 0/15 V, T
GE
case = 80C or 110C
(as noted), D = 0.5
20

1400
1350
1300
1250

10
0
0.01

0.1

10

100

1200
40

1000

15

10

35

60

85

110

135

FREQUENCY (kHz)

TJ, JUNCTION TEMPERATURE (C)

Figure 19. Collector Current vs. Switching

Frequency

Figure 20. Typical V(BR)CES vs. Temperature

SQUAREWAVE PEAK R(t) (C/W)

1
50% Duty Cycle
0.1

RqJA = 0.54

20%
10%

0.01

R1

Junction

5%

R2

Rn

Case

2%
C1

0.001

0.0001
1E06

Single Pulse

1E05

Cn

C2

Ri (C/W)

Ci (J/C)

0.143032
0.120287
0.182418
0.095245

0.002211
0.008313
0.017335
0.104992

Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC
0.0001

0.001

0.01

ONPULSE WIDTH (s)

Figure 21. IGBT Transient Thermal Impedance

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0.1

NGTB15N120IHWG

Figure 22. Test Circuit for Switching Characteristics

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NGTB15N120IHWG

Figure 23. Definition of Turn Off Waveform

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NGTB15N120IHWG
PACKAGE DIMENSIONS
TO247
CASE 340AL
ISSUE A

NOTE 4

SEATING
PLANE

0.635

B A

NOTE 6

E2/2
Q

E2

NOTE 4

NOTE 3
1

DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S

L1
NOTE 5

2X

b2

c
b4
3X

A1
b
0.25

NOTE 7
M

B A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5 TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.

MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC

ON Semiconductor and the

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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each
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NGTB15N120IHW/D