UNIVERSITY QUESTIONS

Academic year :2013-2014

Sub Code & Name: EC 2205 ELECTRONIC CIRCUITS-I
Semester : III
Year/Sec : II A & B
Faculty : M.KARTHIGA
UNIT I
TRANSISTOR BIAS STABILITY
PART A (2 Marks)
1.A.1 What is biasing? And state the bias which is commonly used.
1.A.2 Draw the fixed bias single stage transistor circuit.
1.A.3 Determine the operating point Q and locate it on the DC load line for the circuit shown.

1.A.4 What is the position of Q point on the load line for the transistor to act as a switch?
1.A.5 For the circuit shown in figure determine the operating point with =100.

1.A.6 What is operating point or Q point or quiescent point?

1.A.7 What do you understand by Operating point?
1.A.8 What is reverse saturation current?
1.A.9 Derive for the stability factor S for a fixed bias circuit
1.A.10 Define stability factor for the feedback resistor method.
1.A.11 Define three stability factors.
1.A.12 Define stability factor?
1.A.13 Why capacitive coupling used to connect a signal source to an amplifier.
1.A.14 What is the drawback of collector to base bias
1.A.15 Derive the equivalent circuit for the voltage divider configuration
1.A.16 Which is the most stable biasing circuit? Why?
1.A.17 How can collector current be stabilized with respect to Ico variations?
1.A.18 Draw the fixed bias and self-bias circuit
1.A.19 What is the condition for thermal stability?
1.A.20 Briefly explain with circuit diagram diode compensation technique for Icoin BJT.
1.A.21 Why BJT needs temperature compensation against VBE changes?

1.A.22 Why is temperature compensation required?

1.A.23 What is thermal runaway in a transistor?
1.A.24 Explain the use of JFET as a variable voltage resistor
1.A.25 For the network shown determine the values of RD and RS?

UNIT II
MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS
2.A.1 Derive the input impedance of an emitter follower with equivalent circuit.
2.A.2 Draw a small signal equivalent circuit of CE amplifiers
2.A.3 Compare gain characteristics of CB, CC transistor circuits
2.A.4 What is an amplifier? Compare BJT and FET amplifiers.
2.A.5 Define various h-parameters in a transistor
2.A.6 Draw the small signal equivalent circuit of FET
2.A.7 Draw the small signal equivalent model or h-parameter model of a transistor.
2.A.8 State the expressions for the input-output impedances which offers high stability
2.A.9 Define voltage gain for a JFET CG configuration.
2.A.10 Distinguish between CE, CB, and CC amplifiers.
2.A.11 State Millers theorem
2.A.12 How does input impedance increase due to Darlington connection.
2.A.13 Mention two advantages which are specific to Darlington connection
2.A.14 Draw a Darlington amplifier with Bootstrap arrangement
2.A.15 What is the advantage of Darlington circuit?
2.A.16 What is a Darlington pair? What is its significance?
2.A.17 Define transconductance with respect to a JFET
2.A.18 Give the drain current expressions in triode region and in saturation region of MOSFET
2.A.19 What is the coupling schemes used in multistage amplifiers?
2.A.20 What is need for Differential amplifier?
2.A.21 State Bisection theorem
2.A.22 Define CMRR
2.A.23 What is the need of constant current circuit in differentia amplifier?

UNIT III
FREQUENCY RESPONSE OF AMPLIFIERS
3.A.1 What is meant by power gain?
3.A.2 Draw the general frequency response curve of an amplifier
3.A.3 What is the significance of Octaves and Decades in frequency response?

3.A.4 Why gain drops at low and high frequencies

3.A.5 What is bandwidth of an amplifier?
3.A.6 Define Miller capacitance.
3.A.7 Draw the equivalent circuit of BJTs
3.A.8 Define base spreading resistance (rbb) and mention its importance in transistor hybrid
model
3.A.9 Define fT in a high frequency transistor
3.A.10 What is the effect of emitter by-pass capacitor on the frequency response of CE amplifier
3.A.11 Briefly explain dominant pole high frequency compensation method used in amplifiers.
3.A.12 Draw the AC equivalent circuit of small signal HF CE amplifier.
3.A.13 Why CB amplifier is preferred for high frequency signal when compared to CE amplifier
3.A.14 Define gain bandwidth product
3.A.15 The midband gain of an amplifier is 100 and the lower cutoff frequency is 1kHz.Find the
gain of the amplifier at a frequency of 20 kHz
3.A.16 Define gain bandwidth product of a RC amplifier
3.A.17 Draw the high frequency equivalent circuit of FETs.
3.A.18 Give the expressions for gain bandwidth product for voltage and current
3.A.19 Give the equation of overall upper and lower cutoff frequencies of multistage amplifier
3.A.20 Find the bandwidth of an amplifier if the rise time is 10ns.
3.A.21 Define rise time.
3.A.22 What do you mean by amplifier rise time
3.A.23 Define rise time and sag in an amplifier
3.A.24 The input power to a device is 10000 W at a voltage of 1000 V. the output power is 500
W, while the output impedance is 200 . Find the voltage gain in dBs
3.A.25 If two amplifiers of voltage gains 50 and 100 are cascaded, what is the overall gain of the
circuit in decibels?
3.A.26 If the rise time of BJT is 3.5 sec. find out its transition frequency
3.A.27 Two amplifiers having gain 20dB and 40 dB are cascaded. Find the overall gain in dB
3.A.28 Calculate the cutoff frequency due to C1 and C2 in the circuit diagram shown in Fig.1
hfe=300, hie=32k

3.A.29
3.A.30
3.A.31 .

UNIT IV
LARGE AMPLIFIERS
4.A.1
4.A.2
4.A.3
4.A.4

What do you mean by second order harmonic distortion

Mention the advantage and disadvantage of transformer coupling.
What is the maximum average power dissipated by the load in class A power amplifier
Draw the circuit diagram of transformer coupled class A amplifier

4.A.5 Why is the efficiency of class A resistive loaded power amplifier less than its transformer
coupled counterpart
4.A.6 What is efficiency of class A amplifier
4.A.7 What is theoretical maximum conversion efficiency of class A power amplifier
4.A.8 What is distortion in power amplifiers?
4.A.9 What is crossover distortion and how to minimize?
4.A.10 Mention two important conditions to be satisfied by a complementary symmetry power
stage
4.A.11 With class C power amplifier circuit define class C operation.
4.A.12 Mention the application of class C amplifiers
4.A.13 Compare the efficiency of class A,B,C,AB.
4.A.14 What is class C amplifier? And its applications.
4.A.15 Draw the circuit of a class D amplifier.
4.A.16 Define conversion efficiency of a power amplifier. What is its value for class C power
amplifier?
4.A.17 What is figure of merit in a power amplifier
4.A.18 List the application of MOSFET power amplifier
4.A.19 A power device is mounted on a heat sink with C-S=1C/W, J-C = 7.5C/W and C-A =
5C/W. find the maximum power dissipation of the device when Tjmax = 175C
4.A.20 What is heat sink? State its need.
4.A.21 A class A CE amplifier operates from VCC = 20V draws a current ICQ =5A, and feeds a
load of 40 through a step up transformer of n2/n1=3.16. find the efficiency of the amplifier
when it is properly matched for maximum power supply
4.A.22 A BJT has a maximum power dissipation of 2W at ambient temperature of 25C and
maximum junction temperature of 150C. find its thermal resistance

UNIT V
RECTIFIERS AND POWER SUPPLIES
5.A.1 Compare the performance half wave and full wave rectifiers
5.A.2 What is PIV rating of full wave bridge rectifier
5.A.3 Find the ripple factor for a FWR with capacitor filter with the output waveform as shown
in the figure. Assume RL =100 with C=1000F.

5.A.4 Derive the ripple factor of inductance filter connected to FWR

5.A.5 What is meant by ripple factor for half wave and full wave rectifier
5.A.6 What is the principle of operation of an inductor filter in a rectifier circuit
5.A.7 What are the advantages of bridge rectifier over its center tapped counterpart
5.A.8 Draw the full wave bridge rectifier circuit
5.A.9 What is line regulation and load regulation.
5.A.10 What is voltage multiplier
5.A.11 Draw the half wave voltage doubler circuit
5.A.12 Define voltage regulation
5.A.13 Briefly explain the working of zener regulator
5.A.14 What are the advantages of SMPS over conventional regulators
5.A.15 Draw the block diagram of a switched mode power supply

5.A.16 Give the schematic of power control using SCR

5.A.17 If an amplifier with gain of -1000 and feedback of =-0.1 has a gain change of 20% due
to temperature, calculate the change in gain of the feedback amplifier
5.A.18 SMPS has an output of 10 V for input fluctuations of 15 V to 25 V. Find the variation of
duty cycle of pulse width modulator of the power supply
5.A.19 A power supply has a 4% voltage regulation and an open circuit voltage of 48 V DC.
Calculate the full load voltage

PART B (16 MARKS)

UNIT I

TRANSISTOR BIAS STABILITY

1.B.1 Why biasing is necessary in BJT amplifier and explain the concept f DC ad line with neat
diagram. (8)
1.B.2 a. What is the need for biasing? Design a voltage divider bias circuit for the specified
conditions. VCC=12V, VCE=6V, IC=1mA, S=20, =100 and VE=1V. (16)
1.B.3

1.B.4 i. A silicon transistor uses voltage divider biasing VCC=12V, R1=10k, R2=5k,
RL=1k, and RE=3k. determine the operating point using thevenins theorem (10) )
1.B.5 For an emitter biased circuit, assume that a Si transistor with =50, VBE=0.7V, VCC=12V,
Vcc=22/5V, RC=5.6k. It is desired to establish a Q point at VCE=5V, IC=1.5mA and a
stability factor S3. Find RC, R1, R2. (10)
1.B.6 a. i. For the transistor circuit in fig.1, find the Q point VCC=15 V and B=100, VBE=0.7 V.

1.B.7

Locate the operating point of the circuit shown. VCC =15V, hfe=200(8)

1.B.8 a. Define the stability factors S(ICO) and S(VBE) for the emitter-bias configuration (4)
b. Perform the dc analysis of FET self-bias configuration and sketch the quiescent values.
(12) )
1.B.9 Calculate the stability factor for a fixed bias circuit.
1.B.10 Determine the bias resistor RB for fixed bias and collector to base bias and compare the
stability factor S for both. Given VCC=12V, RL=330, IB=0.3mA, =100, VCEQ=6V. (6)
1.B.11 Derive equations for the three stability factors (16)
1.B.12 Define stability factor. Derive and explain the condition to avoid thermal runaway. (8)
1.B.13 Draw a self(voltage divider) bias and derive all the stability factor S, S,S(16)
1.B.14 Determine VC and VB for the network shown below (16)

1.B.15 a.

b.
1.B.16 Design a self bias circuit for JFET to be biased in pinch-off region. Given VDD=20,
Vgs=-4V,IDSS=8mA. Draw the designed circuit. (8)
1.B.17 Discuss the various techniques of stabilization of Q point in a transistor.
1.B.18 For the given circuit calculate the VCE and IC, where =100 for Si transistor. (8)

1.B.19

1.B.20 Write short notes on temperature compensation methods (6)

1.B.21 Explain Bias compensation (8)
1.B.22 Write short notes on thermistor and sensistor compensations (6)
1.B.23 Explain the circuit which uses a diode to compensate for changes in
VBE and in ICO. (12)
1.B.24 Draw and explain the voltage divider bias using FET and derive for its stability factor.
(10)
1.B.25 Explain how FET acts as a variable resistor (6)
1.B.26 The amplifier shown in fig utilizes an n-channel FET fr which ID=0.8mA, VP=-2 V, IDSS
=1.65mA. Assume that rd>RD. find VGS, gm, RS. (8)

1.B.27

Discuss in detail about any FET biasing techniques (8) [Nov/Dec 2011]
UNIT II

MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS

2.B.1 With a neat circuit diagram and equivalent circuit, perform the small- signal analysis of
voltage divider bias of CE configuration and obtain expressions for the
a. Network parameters andCurrent and voltage gains(16) )
2.B.2 Draw the hybrid model of CE amplifier and obtain its gain, input impedance and output
impedance. Compare the performance of this CE amplifier with CC and CB configuration
(16) )
2.B.3 Derive the expressions for the following of a small signal transistor
amplifier in terms of the h-parameters
(1) current gain
(2) voltage gain

(3) input impedance

(4) output admittance. (12)
2.B.4 Define h parameters f a CE transistor. A transistor has the following parameters
hie=800, hre=10-4, hfe=80, hoe=10-7, for a load of 3k. Calculate voltage gain, current gain,
power gain. (16)
2.B.5

2.B.6

2.B.7
2.B.8 For the CC amplifier circuit, find the expressions for input impedance and voltage gain.
Assume suitable model for transistor
2.B.9 Discuss in detail how the current gain, input impedance, voltage gain and output
impedance of a transistor amplifier can be obtained using h-parameters (16)
2.B.10

2.B.11 . Compare CB, CE and CC amplifiers.

2.B.12

2.B.13 Briefly explain the operation of a Darlington emitter follower and also derive an
expression for its performance measures. (16)
2.B.14 Explain methods of increasing input impedance (10)
2.B.15
Determine the load-current ID and output voltage VO for the given network for (4)
2.B.16
i. RD = 1.2 k
2.B.17
ii. RD = 3.3 k )

2.B.18 Discuss the advantages and limitations of multistage amplifier (6)

2.B.19 a. Calculate the single-ended output voltage, V01, for the circuit shown below(12)

2.B.20
2.B.21 I. Discuss the working of a basic emitter coupled differential amplifier circuit and derive
its CMRR. (8)
2.B.22 If IB1 and IB2 through the base resistors of differential amplifiers are 1.65A and
1.75A. respectively. Calculate the input offset current and input bias current f the
differentia amplifier. (4)
2.B.23 Draw the circuit diagram for a differential amplifier using BJTs. Describe common mode
and differential modes of working. (8)
2.B.24 What is cascode amplifier? Explain its significance.(8)
2.B.25 How does constant current source increase the gain and hence CMRR in a differential
amplifier (6)
2.B.26 Write the improving methods of CMRR(6)
2.B.27 Discuss about the transfer characters of the differential amplifier (8)
2.B.28 For the circuit shown below draw the dc circuit and find VCQ, ICQ, and hfe.(6)
i. For the circuit shown draw the ac circuit and find AV, Rin,Ro.

UNIT III
FREQUENCY RESPONSE OF AMPLIFIERS
3.B.1 Discuss the low frequency and high frequency response of an amplifier (16)
3.B.2 In Darlington amplifier RE=100. If 1=100 and 2=200, calculate the overall input
impedance. (4)
3.B.3 a. Determine the lower cutoff frequency for the network shown below using the
following parameters.
CS = 10F, CE=20F, CC=1F, RS= 1k R1= 40 k, R2=10k, RE=2k, RL=2.2k, =100,
r0=, VCC=20V, RC=4k(12)

3.B.4 Draw the hybrid-pi model of a bipolar junction transistor and obtain an expression for the
CE short circuit 3 dB frequency f.(4) )

3.B.5 Using hybrid pi model for CE amplifier derive the expression for short circuit gain (16)
3.B.6 Draw the hybrid pi common emitter transistor model at high frequencies and derive the
values of all the components in terms of h-parameters(16)]
3.B.7 Draw hybrid pi equivalent circuit of BJT. (4)
3.B.8 Derive the upper and lower cutoff frequencies of a RC coupled BJT amplifier (16) )
3.B.9 Draw the high frequency equivalent circuit of CB BJT amplifier. Derive the expressions
for all parameters (16)
3.B.10 Discuss the high frequency equivalent circuit of FET and hence derive gain bandwidth
product for any one configuration
3.B.11 Draw the high frequency equivalent of FET amplifier and derive all the parameters
related to frequency response (16)
3.B.12 Sketch the small signal high frequency circuit of a common source amplifier and derive
the expression for a voltage gain. (12)
3.B.13 Perform the analysis for high-frequency response of the FET amplifier using the ac
equivalent circuit and obtain the input and output frequencies (16)
3.B.14 What specific capacitance has the greatest effect on the high frequency response of a
cascade of FET amplifier? Explain. (4)
3.B.15 What are the factors affecting thermal stability of power amplifiers. Explain its
significance. (8)
3.B.16 Explain the operation of high frequency common source FET amplifier
with neat diagram. Derive the expression for (i) voltage gain (ii) input
admittance (iii) input capacitance (iv) output admittance. (16)
3.B.17 Discuss the frequency response of multistage amplifiers. Calculate the overall upper and
lower cutoff frequencies. (10)
3.B.18 Explain the upper and lower cutoff frequencies of multistage amplifier with expressions
(8)
3.B.19 Discuss the terms rise time and sag (6)
3.B.20 For the circuit shown find cut off frequencies due to C1,C2,CS. and due to interelectrode
capacitors Cgs and Cgd.(16) )
Given: gm=0.49mA/V, Cgd=9.38pF ,Cgs=1.8pF , rd=40k

UNIT IV
LARGE AMPLIFIERS
4.B.1 What is a power amplifier? How does this differ from voltage amplifier? Explain.(8)
4.B.2 Discuss the frequency response characteristics of RC coupled amplifiers. Derive the
general expressions for gain at low, middle and high frequencies. Draw Bode plots for low
and high frequency regions. (16)
4.B.3 Explain class A power amplifier with circuit diagram and derive its efficiency (8)

4.B.4

4.B.5 Explain class A RC coupled power amplifier. (10)

4.B.6 Explain how the characteristics are modified with transformer coupling(6)
4.B.7 Derive the expression for efficiency of class A audio power amplifier. Describe in detail
about its working principle with neat diagrams (16)
4.B.8 Explain the terms conversion efficiency and maximum value of
efficiency used in audio power amplifiers. (4)
4.B.9 Explain a power amplifier which has an efficiency of 78.5% with a circuit diagram and
explain the associated current waveforms (10)
4.B.10 Derive the theoretical max conversion efficiency of class B power amplifier. (10)
4.B.11 Prove that the max efficiency of class B amplifier is 78.5 % and that of class A is 50%.
(16)
4.B.12 Design a push-pull class B amplifier to achieve maximum power output to a 10 load.
Use two transistors with iC, max =1A. Specify VCC and N. Calculate the power output and
efficiency. PC,max= 4W, BVCEO=40V. (8)
4.B.13 Discuss the class B push-pull power amplifier (16)
4.B.14 Describe the distortion in power amplifier and the methods to eliminate the same.(16)
4.B.15 Describe the operation of class AB amplifier to avoid crossover distortion (6)
4.B.16
4.B.17 A class B complementary A.F power amplifier shown in figure. Calculate
a. Maximum AC power which can be developed
b. Collector dissipation while developing maximum AC power
c. Efficiency
d. Maximum power dissipation per transistor
e. Efficiency under maximum power dissipation condition.(16)

4.B.18 Explain the working of complementary symmetry class B push pull amplifier. What are
its merits, demerits and applications (16)

4.B.19
4.B.20 Explain the operation of class C amplifier and derive its efficiency and figure of merit.
(16)
4.B.21 Explain class D power amplifier with neat sketches (6)
4.B.22 Write short notes on power MOSFET amplifier (6)
4.B.23 A transistor having the following specifications is used in the given circuit

PC,max(after derating) =4W, BVCEO=40V, iC,max =2A, RL=10. Determine the Q point so that
maximum power is dissipated by the load resistor. (6)
4.B.24 A transistor to be used in class C operation has the specifications PC,max= 4W,
BVCEO=40V and IP,max=2A, VCC=20V.
i. Find the minimum value of RL.
ii. What is the possible peak current. (8)
4.B.25

4.B.26 The loud speaker of 8 is connected to the secondary of the output transformer of class
A amplifier circuit. The Q collector current is 140 mA. Turns ratio is 3:1. The collector
supply voltage is 10V is ac power delivered to the loud speaker is 0.48 W. Calculate,
a. A.C power developed across primary
b. RMS value of load voltage
c. RMS value of primary voltage
d. RMS value of load current
e. RMS value of primary current
f. D.C power input
g. Efficiency assuming ideal transformer (16)
4.B.27 Draw the dc and ac load lines for circuit on CE characteristics. Assume R=40, NP=74,
NS=14, VCC=13V. (8)

UNIT V
RECTIFIERS AND POWER SUPPLIES
5.B.1 A half wave rectifier circuit is supplies from a 230V 50Hz, supply with a transformer
having step down ratio of 4:1 to a resistive load of 20k. the diode forward resistance is
100, while transistor series resistance is 30. Calculate the maximum, average and RMS
value of current. (8)
5.B.2 Derive ripple factor for FWR with capacitive filter (10)
5.B.3 In a full wave rectifier a signal f 300V at 50Hz is supplied at the input. Each diode has an
internal resistance of 800. If the load is 2000 calculate
a. Instant peak value f current(3)
b. Output dc current(3)
c. Efficiency of power transfer(3)
5.B.4 Explain the working of FWR with CC filter and derive for its ripple filter (12)
5.B.5 Compare HWR and FWR with respect to output average voltage and ripple factor (4)
5.B.6 Derive the expressions for the rectification efficiency, ripple factor,
transformer utilization factor, form factor and peak factor of
(i) half wave rectifier
(ii) full wave rectifier. (16)
5.B.7 Derive the ripple factor for the following types of filters:
i. C
ii. L
iii. L-C
iv. C-L-C (16)
5.B.8 Explain the circuit of voltage regulator and also short circuit protection mechanism (16)
5.B.9 Explain about voltage multipliers(7)
5.B.10 Explain how zener diode acts as a regulator (6)
5.B.11 Design and draw a zener regulator circuit to meet the specification.
a. Load voltage= 8V
b. Input voltage= 30 V
c. Load current=0-50 mA
d. IZmin= 5mA
e. PZ=1W (8)
5.B.12 Discuss in detail electronically regulated DC power supplies (16)
5.B.13 Draw and explain the working principle of a SMPS circuit with its output waveforms.
(16)
5.B.14 i. Explain the power control method using SCR (10)
ii Design ZENER regulator for the following specification. VIN =8V to 12V, V0=10V, RL=10k. Assume that zener diode is ideal.(6)