Procedure 1

Discrete MOSFET gate lead, sex, and mode identification

Measurement-1 The gate lead of a MOSFET is separated from the other leads by the gate oxide layer
which forms the gate of a MOS capacitor. For DC, this capacitor should not pass any current. Thus, use
the DMM in the resistance mode to find the lead on the 2N7000 MOSFET which does not conduct to any
of the other leads, in either polarity.

fig3.1 MOSFET 2N7000

DRAIN
M1
2N7000
D1
INTERNAL

GATE

SOURCE

fig3.2

Question-1:
(a) From your measurements above, summarize your findings about the given 2N7000 MOSFET in your
notebook.
1

3.2387V

OL(ohm)

3.2387V

OL(ohm)

0.5254V

2.26(M.ohm)

3.2833V

OL(ohm)

3.2437V

OL(ohm)

3.2452V

OL(ohm)

(b) Draw a picture of the device package and label the leads.

(c) Look up the data sheet for the the 2N7000 and compare your deductions with the manufacturer's
specifications. (Data sheets can be most easily obtained online from the EE Stores web pages.)
Comment on any discrepancies

(d) Draw up a flow chart for testing any four-terminal MOSFET with an ohmmeter which can be used to
conclusively determine which lead is the gate, which lead is the body, whether the device is an nchannel or p-channel, and whether the device is a D-mode or an E-mode.

(e) If the gate oxide were destroyed by a static electricity discharge, speculate on how the DMM
readings might be different from those that were observed.
If the gate oxide were destroyed, electric current could pass the gate to the drain and source, which would
make resistance measured between lead 1, 2 and lead 2, 3 different.

Procedure 2

Set-Up

Integrated MOSFET lead, sex, and mode identification

+ We build the MOSFET circuit as shown below in the schematic of Fig. E3.2a.

DC PS 1

Figure 3.3
RC
100

DMM1 (+)

VDD
VRC

DMM1 (-)

DMM2 (+)

VGG

M1

VDS

VGS

DC PS
GND

GND

Measurement-2:
+ Adjust the DC power supply 2 VGG to produce voltages +1.0 Volts. Then adjust
DC power supply 1 from 0.0 V to 10.0 V with increment 1.0 V.
+ Measure the VRC and VDS with DMMs.
+ Record the drain current and VDS in a table.
+ Calculate the drain current: ID =VRC/100.0.
+ Then we increase the DC power supply 2 0.5 V and repeat till measuring four different
(ID,VDS) pairs.
From the 4 above tables, we plot the I-V characteristics (ID vs VDS) of MOSFET.

+ For VGS=1 V.

+for VGS=1.5.

+For VGS=2.

+For VGS=2.5.
Question-2 :
a. From the data in 4 tables, we can see that the value of VGS which starts to produce a non-zero drain
current is 2.0V, which is approximation to the threshold voltage VT of the MOSFET.

b. The drain current ID shows a clearly defined saturation at VGS being 2.5V and 3.0V
With VT = 2.0 V, VDS = 0.901V => VDS, sat = 2.5 2.0 = 0.5V
This value is approximate to the actual value of VDS, sat = 0.901V
With VT = 2.0 V, VDS = 1.61V => VDS, sat = 3 2.0 = 1.0V
This value is approximate to the actual value of VDS, sat = 1.61V
The textbook theory predicts the measured behavior of a real MOSFET pretty well.

Procedure 3: Output conductance effects________________________

Measurement-3: Locate a 10 k 5% 1/4 W resistor, and connect this resistor in parallel with the drain
and source terminals of the MOSFET on the solderless breadboard (pins 7 & 8). This resistor simulates
the effect of increasing the output conductance of the MOSFET. Repeat previous procedure to produce
(ID, VDS) plots.
+VGG=1V
VDD(V)

VRC(V)

VDS(V)

ID(A)

0.0
2
0.0
1
0

0.9
9
1.9
8
3.0
3
4

0.1

7
8

0.0
4
0

10

0.1

4.9
1
5.9
9
6.9
6
8.0
2
8.9
9
9.9
7

0
0
0

0
0
0
0
0.001

+VGG=1.5V

VDD(V)
0
1
2
3
4
5
6
7
8
9
10

VRC(V)
0
0
0
.0
0
0.
11
0
.
0.
09
0
.
0.
05
0.
09

VDS(V)
0
1
1.97
3.03
4
4.98
5.99
7
8.02
8.96
9.91

ID(A)
0
0
0
0
0
0.001
0.001
0.001
0.001
0.001
0.001

+VGG=2V:

VDD(V)
0
1
2
3
4
5
6
7
8
9
10

VRC(V)

VDS(V)
0
0.01
0.02
0.05
0
0
0.02
0.02
0.05
0
0.04

ID(A)
0
0.98
1.99
3
3.97
4.98
5.99
6.98
7.96
8.96
9.97

0
0
0
0
0
0
0
0
0
0
0

+VGG=2.5:

VDD(V)
0
1
2
3
4
5
6
7
8
9
10

VRC(V)
0
0.881
1.16
1.4
1.7
2.03
2.43
2.79
3.17
3.54
3.92

VDS(V)
0
0.119
0.84
1.6
2.3
2.97
3.57
4.21
4.83
5.46
6.08

ID(A)
0
0.00881
0.0116
0.014
0.017
0.0203
0.0243
0.0279
0.0317
0.0354
0.0392

Question-3:
(a) First discuss qualitatively what effect the addition of the 10 k resistor has on the MOSFET output
characteristics.
-When we added a 10 resistor in parallel with the MOSFET, it will make the output resistor decrease
the output conductance will increase.
-And the output voltage in this case is VDS = VDD-VRS.
(b) From the first measurement of MOSFET M1 without the resistor being present, and select a value of
VGS which shows a clean saturation of the drain current. Select a few points within the saturated region
of the curve and calculate the slope of the output characteristics in units of reciprocal of this value to
obtain the inverse slope in units of . These values are the output conductance and resistance, respectively.
We choose VGS = 2.5V, Point # 1: ID = 0.0794A, VDS = 1.61V
Point # 2: ID = 0.0801A, VDS = 2.52V
hence the conductance= (0.0801-0.0794)/(2.52-1.16)=0.000769 -1
the resistance =1/conductance = 1300

(c) Next from the second measurement of MOSFET M1 with the resistor added, and perform the same
analysis on the same VGS curve to find the output conductance and resistance for this case.
We choose VGS=2.5V, Points # 1: ID = 0.076A, VDS = 0.44V
Points # 2: ID = 0.083A, VDS = 0.74V
The conductance = (0.083-0.076)/(0.74-0.44) = 0.0233 -1
The resistance = 42,86
(d) Discuss how closely these measured values match to the empirical device equation
IDsat = 0.5 k(VGS - VT)2(1 + VDS)
where is the output conductance parameter in units of V-1
IDsat = K(Vgs-Vt)2 (1+Vds)
= .100.10-3(1-0.75)2 (1 + 0.0233*0.04) = 0.0536 (A)
And out IDsat = 0.076 A

Procedure 4 JFET gate lead, sex, and mode identification__________

Measurement-4: -Use the DMM in its ohmmeter setting to test pairs of leads on the JFET and therefore
identify the gate lead on the device. From the polarity which causes the gate terminal to conduct, deduce
whether the JFET is an n-channel or p-channel device.
Lead a

Lead b

Rab and Rba

OL and OL

6.03 M and OL

OL and OL

-Use the DMM, again in its ohmmeter setting, to determine whether the device is a depletion-mode (Dmode, or normally-ON) or an enhancement-mode (E-mode, or normally-OFF) device.
The resistance between S and D is not negligible (15.43 K and 14.49 K) => the JFET is operating
in Depletion-mode.
Question-4:

(b) Draw a picture of the device package and label the leads.

(c) Is it possible to distinguish the drain lead from the source lead using only an ohmmeter? Explain why
or why not.
It is not, because the Drain and the Source are connected and are basically symmetric, hence having the
same potential.
(d) Look up the data sheet for the the MPF102 and compare your deductions with the manufacturer's
specifications. (MPF102 is a Motorola part number, but it is also second sourced by Fairchild.) Comment
on any discrepancies.

(e) Draw up a flow chart for testing any JFET with an ohmmeter which can be used to conclusively
determine which lead is the gate, whether the device is an n-channel or p-channel, and whether the device
is a D-mode or an E-mode.