0 IEE 1996

Electronics Letters Online No: 19960801

24 April 1996

Y. Uenishi, K. Honma and S. Nagaoka (NTT ZnferdiscQlinary

Research Laboratories, 3-9-11 Midori-cho, Musashino, Tokyo, 180
Japan)

References
1

BROOKS. R E :

Micromechanical light modulators on silicon, Opt.

Eng., 1985. 24, (l), pp. 101-106

3
4
-1000

-500

500

1000

squared driving voltage, V2

Fig. 4 Micromirror displacement against driving voltage

Samples: 0 1 , 0 2 , A3,A 4

Dcrice clzuracteristics The micromirror displacement against driving voltage IS shown in Fig 4. It is linear against the square of the
driving voltage The signal displacement indicates the direction of
the niirror (-. forward, t.backward relative to the L D facet), and
total deflection of - l o p as the sum of forward and backward
motion was obtained at <30V driving voltage.

ARATANI. K
FRENCH, P J.,
WOLFFENBUTTEL. R F.,
and

SARRO, P.M.,
MIDDELHOEK, s.:

POENAR, D.,

Surface
micromachined tunable interferometre array, Sens. Actuators A,
1994. 43, pp. 17-23
LI\. L.Y. LEE. s.s, PETER, K S J , and wu. M.c.: Three dimensional
micro-Fresnel optical elements fabricated by micromachining
technique. Electron. Lett., 1994, 30, ( 9 , pp. 448-449
~ i hL. Y.. LEE. s s . PISTER. K.S J , and wu. M c : Micromachined three
dimensional micro-optics for integrated free-space optical system,
IEEE Photonics Technol. Lett., 1994, PTL-6, pp. 1445-1447
UENISHI. Y
TSLGAI. M , and MEHREGANY, M.: Hybrid-integrated
micromirror of laser-diode fabricated by (1 10) silicon
micromachining. Electron. Lett., 1995, 31, (12), pp. 965-966
LENISHI, Y., TSUGAI, M.,
and MEHREGANY, M.: Micro-opt0
mechanical devices fabricated by anisotropic etching of (110)
silicon, J. Micromech. Microeng., 1995, 5 , pp. 305-3 12

Analytical formula for calculating the

coupling characteristics between parallel
coplanar lines
K.-K.M. Cheng
Indexing terms: Coplarzar waveguide.s, Waveguide theory

For the first time, a CAD-oriented analytical formula for the

evaluation of the quasi-static coupling characteristics between
parallel coplanar lines is presented. The analysis is based on a
sequence of conformal transformations, and the derived
expressions show excellent accuracy compared to the results
generated by a spectral domain approach.

squared driving voltage,V2

Fig. 5 Wavelength tunnbilrty againsr driving voltage

I,, = 20mA

Fig. 5 shows the wavelength tunability against the driving voltage of the micromirror. The LD was operated at 20mA CW current, which was twice the threshold current. The L D lased with
mutimode spectra and the lasing peak wavelength decreased with
increasing external cavity length. A total tunable range of 20 nm
was obtained from the total forward and backward motion of the
micromirror. For any lasing spectrum, the wavelength increased
continuously for -1 nm with increasing cavity length, and then
jumped to the next spectrum. In general, the lasing wavelength h
is given by h = 2nUm (m: integer), where n is the refractive index
and L is the cavity length. From this equation, we estimated that
the mirror can be controlled within 2nm precision, because the
wavelength could be varied in 0.Olnm steps by changing the mirror displacement.
Conclusion; A tunable laser diode with an Ni micromirror was
fabricated by Ni surface micromachining. The mirror acts as an
external cavity of the LD, and 20nm wavelength tuning was
attained. The mirror displacement precision was estimated to be
within 2 nm based on the Wavelength variation.

1208

Introduction: Owing to the increasing popularity of coplanar

waveguides for the design of hybrid and monolithic microwave
integrated circuits, the need for accurate characterisation of the
structures has increased. Quasistatic solutions to the coplanar
transmission lines have been reported using various approaches,
such as the finite difference method [l] and the spectral domain
technique [2]. The conformal mapping method (31 has also been
used to obtain the characteristic parameters of single coplanar
lines. In this Letter, a new and accurate closed-form formula for
evaluating the coupling characteristics between parallel coplanar
lines is proposed.
:

d
c

j
.
,

t+
Er

*----*

D
(93711/

Fig. 1 Parallel coplanar line structure

Analysis: The structure to be analysed is shown in Fig. 1, where

the two coplanar lines are separated by a ground plane of width
20. All conductors are assumed to be infinitely thin and perfectly
conducting. It is assumed that the air-dielectric interfaces, where
all the conductors are located, can be dealt with as though perfect
magnetic walls are present in theni. The even- and odd-mode
capacitances per unit length of the structure can thus be considered as the sum of the capacitances in the upper region (air) and
lower region (air and dielectric layer). The lower region capacitance is then evaluated by the approximate technique suggested in
[3] as the sum of the free-space capacitance in the absence of the

ELECTRONICS LETTERS

20th June 1996

Vol. 32

No. 13

dielectric (Fig. 2a and b) and the capacitance of the dielectric layer

(Fig. 2c and 4, assumed to have permittivity (E?-1). Note that the
structure in the t-domain shown in Fig. 2a is simply an asymmetrical coplanar line, and its electrical characteristics has been

(5)

r---:

a b

c d

I
-

z-plane

P3 = (P1 + h ) / 2
(10)
where E, is the dielectric constant of the lower-half region in a.
Simple and accurate formulas are available [SI for the solution of
eqns. 1 and 3-9.

Table 1: Comparison of even- and odd-mode characteristic impedd

37

ance values for parallel coplanar lines, calculated by proposed method and a spectral domain approach (d c) =
(c - b) = (b - a ) = h, E, = 10
-

Fig. 2 Odd and even mode of coplanar lines

This Letter
75.4

74.0

This Letter
65.2

64.3

72.3
70.1

71.2
69.0

67.3
69.2

66.2
68.1

0.2
0.5

r
C

I
I
I

1
I

1
I

Discussions: Table 1 shows the even- and odd-mode characteristic

impedance values of parallel coplanar lines, evaluated by both the
proposed method and a spectral domain approach [6]. It is
observed that the discrepancies between the two sets of values are
practically small (both <2%) for different a/d ratios. Hence, coupling coefficients [3] calculated from the two sets of impedance
values are found to differ by <0.2dB.

1
I

I
I

0 IEE 1996
Electronics Letters Online No: 19960809

3 April 1996

K.-K.M. Cheng (Departnzent of Electronic Engineering, The Chinese

University of Hong Kong, Shutin, Hong Kong)
Fig. 3 Capacilante evaluation h j conformal tran forination

References
described elsewhere [4]. For the configurations in the t-domain
depicted in Fig. 2h and d, further transformations (Fig. 3) are
required in order to obtain their line capacitance values. Referring
to Fig. 3, the structure in a is first converted into the one shown in
b by the following expressions:

where F($, k ) is the incomplete elliptic integral of the first kind,

written in Jdcobi notation. A magnetic wall is then assumed to be
present at the centre of the slot, and hence the structure in b can
be considered as the sum of two capacitances, as depicted in e. As
a result, the capacitance per unit length of the configuration
shown in a is given by

ELECTRONICS LETTERS

20th June 7996

Vol. 32

Computation
of
coplanar-type
strip-linc
characteristics by relaxation method and its application to
microwave circuits, ZEEE Trans. Microw. Theory Tech., 1975,
MTT-23, (lo), pp. 795-802
BOIX, R.R., and HORNO, M.: Modal quasistatic parameters for
coplanar multiconductor structures in multilayered substrates with
arbitrary transverse dielectric anisotropy, IEE Proc. H , Microw.
Antennas Propag., 1989, 136; (l), pp. 76-79
GHIONE, G., and NALDI. c.: Coplanar waveguides for MMIC
applications: effect of upper shielding, conductor backing, finiteextent ground planes, and line-to-line coupling, IEEE Trans.
Microw. Theory Tech., 1987, MTT-35, ( 3 ) , pp. 260-267
CHENG, K.K M., and ROBERTSON, T D.: Simple and explicit formulas
for the design and analysis of asymmetrical V-shaped microshield
line, I E E E Trans. Microw. Theory Tech., 1995, MTT-43, (IO), pp.
2501-2504
CHENG, K.K.M.,
and ROBERTSON. I.D.: Quasi-TEM Study of
microshield lines with practical cavity sidewall profiles, IEEE
Trans. Microw. Theory Tech., 1995, MTT-43, (12), pp. 2689-2694
CHENG.
K.K.M., and ROBERTSON, I.D.:Numerically efficient spectral
domain approach to the quasi-TEM analysis of supported
coplanar waveguide structures, IEEE Trans. Micro~w. Theory
Tech., 1994, MTT-42, (lo), pp. 1958-1965
HATSUDA, T.:

No. 13

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