MOSFETs 2015 02 23

CHAPTER 3
MOS Field-Effect Transistors

(MOSFETs)
MICROELECTRONIC CIRCUITS
Sedra/Smith
Sixth Edition
Oxford University Press
2011
2015/2/23
Chih-Wen Lu
In This Chapter You Will Learn
Device Structure and Physical.

Current-Voltage Characteristics.
MOSFET Circuits at DC.
Applying the MOSFET in Amplifier Design.
Small-Signal Operation and Models.
Basic MOSFET Amplifier.
Biasing in MOS Amplifier Circuits.
Discrete-Circuit MOS Amplifiers.
The Body Effect and Other Topics.
2015/2/23
Chih-Wen Lu
Introduction
The voltage between two terminals of the FET controls the current
in the third terminal.
The FET can be used both as an amplifier and as a switch.
The current-control mechanism is based on an electric field
established by the voltage applied to the control terminal.
The current is conducted by only one type of carrier (electrons or
holes).
2015/2/23
Chih-Wen Lu
Introduction (contd)
Enhancement-Type MOSFET
MOSFET
FETs
Depletion-Type MOSFET
JFET
FETs: Field-Effect Transistors
MOSFET: metal-oxide semiconductor field-effect transistor
JFET: Junction field-effect transistor
2015/2/23
Chih-Wen Lu
3.1 Device Structure and Physical Operation

The enhancement-type MOSFET is the most widely used fieldeffect transistor. In this section, we shall study its structure and
physical operation. This will lead to the current-voltage
characteristics of the device, studied in the next section.
2015/2/23
Chih-Wen Lu
3.1 Device Structure and Physical Operation (contd)

Physical structure of the enhancement-type NMOS transistor: (a)
perspective view; (b) cross-section. Typically L = 0.1 to 3 mm, W =
0.2 to 100 mm, and the thickness of the oxide layer (tox) is in the
range of 2 to 50 nm.
2015/2/23
Chih-Wen Lu

Four terminals: Gate (G), Source (S), Drain (D), and Substrate or
body (B)
Polysilicon is used to form the gate electrode in the modern
technology.
2015/2/23
Chih-Wen Lu
2015/2/23
Chih-Wen Lu
2015/2/23
Chih-Wen Lu

The substrate forms pn junctions with the source and drain regions.
These pn junctions are kept reversed-biased at all times.
Thus, the substrate will be considered as having no effect on device
operation, and the MOSFET will be treated as a three-terminal
device, with the terminals being the gate, source, and drain.
2015/2/23
Chih-Wen Lu
10

A voltage applied to the gate controls current flow between source
and drain.
This current will flow in the longitudinal direction from drain to
source in the region labeled channel region.
2015/2/23
Chih-Wen Lu
11

Operation with No Gate Voltage.
With no bias voltage applied to the gate, two back-to-back diodes
exit in series between drain and source.
These back-to-back diodes prevent current conduction from drain
to source when a voltage vDS is applied.
2015/2/23
Chih-Wen Lu
12

Creating a Channel for Current Flow.
The enhancement-type NMOS transistor with a positive voltage
applied to the gate. An n channel is induced at the top of the
substrate beneath the gate.
2015/2/23
Chih-Wen Lu
13

Ground the source and drain and apply a positive voltage to the
gate.
The positive voltage on the gate causes the free holes to be repelled
from the region of the substrate under the gate (channel region).
As well, the positive gate voltage attracts electrons from the n+
source and drain regions into the channel region.
2015/2/23
Chih-Wen Lu
14

When a sufficient number of electrons accumulate near the surface
of substrate under the gate, an n region is in effect created,
connecting the source and drain regions.
2015/2/23
Chih-Wen Lu
15

Now if a voltage is applied between drain and source, current flows
through this induced n region, carried by the mobile electrons.
Correspondingly, this MOSFET is called an n-channel MOSFET
or, an NMOS transistor.
2015/2/23
Chih-Wen Lu
16

An n-channel MOSFET is formed in a p-type substrate.
The channel is created by inverting the substrate surface from p
type to n type.
Hence the induced channel is also called an inversion layer.
2015/2/23
Chih-Wen Lu
17

The value of vGS at which a sufficient number of mobile electrons
accumulate in the channel region to form a conducting channel is
called the threshold voltage and is denoted Vt. Vt for an n-channel
FET is positive.
2015/2/23
Chih-Wen Lu
18

The gate and body of the MOSFET form a parallel-plate capacitor
with the oxide layer acting as the capacitor dielectric.
The positive gate voltage causes positive charge to accumulate on
the top plate of the capacitor (gate electrode).
2015/2/23
Chih-Wen Lu
19

The corresponding negative charge on the bottom plate is formed
by the electrons in the induced channel.
An electric field thus develops in the vertical direction.
It is the field that controls the amount of charge in the channel, and
thus determines the channel conductivity and the current that will
flow through the channel when a voltage vDS is applied.
2015/2/23
Chih-Wen Lu
20

Applying a Small vDS
An NMOS transistor with vGS > Vt and with a small vDS applied.
The device acts as a resistance whose value is determined by vGS.
Specifically, the channel conductance is proportional to vGS Vt
and thus iD is proportional to (vGS Vt) vDS.
2015/2/23
Chih-Wen Lu
21

Apply a small positive voltage vDS.
A current in the channel, iD, will flow from drain to source.
The magnitude of iD depends on the density of electrons in the
channel, which in turn depends on the magnitude of vGS.
2015/2/23
Chih-Wen Lu
22
For vGS = Vt the channel is just induced and current is still small.
As vGS exceeds Vt, more electrons are attracted into the channel.
The result is a channel of increased conductance.
In fact, the conductance of the channel is proportional to the excess
gate voltage (vGS Vt). iD is proportional to vGS Vt and to vDS.
2015/2/23
Chih-Wen Lu
23

The iDvDS characteristics of the MOSFET when the voltage
applied between drain and source, vDS, is kept small. The device
operates as a linear resistor whose value is controlled by vGS.
2015/2/23
Chih-Wen Lu
24

The MOSFET is operating as a linear resistance whose value is
controlled by vGS.
The resistance is infinite for vGS < Vt, and its value decreases as vGS
exceeds Vt.
2015/2/23
Chih-Wen Lu
25

Increasing vGS above Vt enhances the channel, hence the names
enhancement-mode operation and enhancement-type MOSFET.
2015/2/23
Chih-Wen Lu
26

Operation as vDS Is Increased
Operation of the enhancement NMOS transistor as vDS is
increased. The induced channel acquires a tapered shape, and its
resistance increases as vDS is increased. Here, vGS is kept constant
at a value > Vt.
2015/2/23
Chih-Wen Lu
27

As vDS is increased.
The voltage between the gate and points along the channel
decreases from vGS at the source end to vGS vDS at the drain end.
The channel will take the tapered form.
As vDS is more increased, the channel more tapered and its
resistance increases.
2015/2/23
Chih-Wen Lu
28

Thus iD vDS curve does not continue as a straight line but bends.
Eventually, when vDS is increased to the value that reduces the
voltage between gate and drain to Vt, that is, vGS vDS = Vt or vDS =
vGS Vt the channel depth at the drain end decreases to almost zero,
and the channel is said to be pinched off.
The drain current iD

versus the drain-tosource voltage vDS
for an enhancementtype NMOS
transistor operated
with vGS > Vt.
2015/2/23
Chih-Wen Lu
29

Increase vDS beyond this value has little effect on the channel
shape, and the current through the channel remains constant at the
value reached for vDS = vGS Vt
The drain current thus saturates at this value, and the MOSFET is
said to have entered the saturation region.
2015/2/23
Chih-Wen Lu
30

The voltage vDS at which saturation occurs is denoted vDSsat, vDSsat =
vGS - Vt
Obviously, for every value of vGS Vt, there is a corresponding
value of vDSsat. The device operates in the saturation region if vDS
vDSsat .
The region of the iD vDS characteristic obtained for vDS < vDSsat is
called the triode region.
2015/2/23
Chih-Wen Lu
31

vDS is increased while vGS is kept constant.
Theoretically, any increase in vDS above vDSsat (which is equal to
vGS - Vt ) has no effect on the channel shape and simply appears
across the depletion region surrounding the channel and the n+
drain region.
Increasing vDS causes the channel to acquire a tapered shape.

Eventually, as vDS reaches vGS Vt the channel is pinched off at the
drain end. Increasing vDS above vGS Vt has little effect
(theoretically, no effect) on the channels shape.
2015/2/23
Chih-Wen Lu
32

Derivation of the iD-vDs Relation
A voltage vGS is applied between gate and source with vGS > Vt, and
a voltage vDS is applied between drain and source.
First consider operation in the triode region. i.e. let vDS < vGS Vt.
The channel will have the tapered shape illustrated in this figure.
Derivation of the iDvDS

characteristic of the
NMOS transistor.
2015/2/23
Chih-Wen Lu
33

In the MOSFET, the gate and the channel region form a
parallelplate capacitor for which the oxide layer serves as a
dielectric. If the capacitance per unit gate area is denoted Cox and
the thickness of the oxide layer is tox, then
Cox
e ox
tox
where eox is the permittivity of the silicon oxide,
e ox 3.9e 0 3.9 8.854 1012 3.45 1011 F/m

and tox the thickness of the oxide layer.
2015/2/23
Chih-Wen Lu
34

Consider an infinitesimal portion of the channel of length dx at a
point x from the source.
The electron charge dq(x) in this infinitesimal portion can be
expressed as dq x C (Wdx) v v x V
ox
t
GS
2015/2/23
Chih-Wen Lu
35

The voltage vDS produces an electric field along the channel in the
negative x direction. At point x, this field can be expressed as
E x
2015/2/23
dv x
dx
Chih-Wen Lu
36

The electric field E(x) causes the electron charge dq(x) to drift
toward the drain with a velocity dx/dt
dv x
dx
mn E x mn
dt
dx
where mn is the electron mobility in the channel.
2015/2/23
Chih-Wen Lu
37

The resulting drift current
dv x
dq dq x dx
i
CoxW vGS v x Vt mn
dt
dx dt
dx
dv x
mnCoxW vGS v x Vt
dx
2015/2/23
Chih-Wen Lu
38

Although evaluated at a particular point in the channel, the current i
must be constant at all points along the channel, and thus i must be
the negative of the drain-to-source current iD, giving
dv( x)
iD i mnCoxW vGS v x Vt
dx
iD dx mnCoxW vGS Vt v x dv( x)
2015/2/23
Chih-Wen Lu
39

Integrating both sides of this equation for x = 0 to x = L, and for
v(0) = 0 to v(L) = vDS.
L
vDS
0 iD dx 0 mnCoxW vGS Vt v x dv x
Gives
1 2
W
iD mnCox vGS Vt vDS vDS
2
L
This is the expression for the iD vDS characteristic in the triode

region.
2015/2/23
Chih-Wen Lu
40

The expression for the saturation region can be obtained by
substituting vDS = vGS Vt, resulting in
1
2
W
iD mnCox vGS Vt
2
L
2015/2/23
Chih-Wen Lu
41

Process transconductance parameter
k mnCox
'
n
2015/2/23
Chih-Wen Lu
42

Triode region:
iD kn'
Saturation region:
where
W
1 2
vDS
GS
t
DS
L
2
1 W
2
iD kn' vGS Vt
2 L
kn' m nCox
The drain current is proportional to the ratio of the channel width

W to the channel length L, known as the aspect ratio of the
MOSFET.
2015/2/23
Chih-Wen Lu
43

Example
Consider a process technology for which Lmin = 0.4 mm, tox = 8 nm,
mn = 450 cm2/Vs, and Vt = 0.7 V.
/
(a) Find Cox and k n.
(b) For a MOSFET with W / L = 8 mm/0.8 mm, calculate the values of
VGS and VDSmin needed to operate the transistor in the saturation
region with a dc current ID = 100 mA.
(c) For the device in (b), find the value of VGS required to cause the
device to operate as a 1000-W resistor for very small vDS.
2015/2/23
Chih-Wen Lu
44

Solution
/
(a) Find Cox and k n.
Cox
e ox
tox
3.45 1011
3
2
4.32
10
F/m
8 109
4.32 fF/m m 2
kn mnCox 450 (cm 2 /V s) 4.32 (fF/m m 2 )
450 108 (m m 2 /V s)
194 10-6 (F/V s)
194 m A/V 2
2015/2/23
Chih-Wen Lu
45

(b) calculate the values of VGS and VDSmin needed to operate the
transistor in the saturation region with a dc current ID = 100 mA.
For operation in the saturation region,
1 W
iD kn (vGS Vt )2
2 L
Thus,
1
8
100 194
(VGS 0.7)2
2
0.8
which results in
VGS 0.7 0.32 V

or
and
2015/2/23
VGS 1.02 V
VDS min VGS Vt 0.32 V

Chih-Wen Lu
46

(c) For the device in (b), find the value of VGS required to cause the
device to operate as a 1000-W resistor for very small vDS.
For the MOSFET in the triode region with vDS very small,
W
iD kn (vGS Vt )vDS
L
From which the drain-to-source resistance rDS can be found as
rDS
Thus,
which yields
Thus,
2015/2/23
vDS
iD
small vDS
1 kn (VGS Vt )
L
1000
1
194 106 10(VGS 0.7)
VGS 0.7 0.52 V
VChih-Wen
V
GS 1.22
Lu
47

The p-channel MOSFET
A p-channel enhancement-type MOSFET (PMOS transistor) is
fabricated on an n-type substrate with p+ regions for the drain and
source, and has holes as charge carriers.
The device operates in the same manner as the n-channel device
except that vGS and vDS are negative and the threshold voltage Vt is
negative.
Also, the current iD enters the source terminal and leaves through
the drain terminal.
2015/2/23
Chih-Wen Lu
48
Complementary MOS or CMOS

Both PMOS and NMOS transistors are utilized.
NMOS transistor is implemented directly in the p-type substrate.
PMOS transistor is fabricated in a specially created n region,
known as n well.
The two devices are isolated from each other by a thick region of
oxide that functions as an insulator.
2015/2/23
Chih-Wen Lu
49
3.2 Current-Voltage Characteristics

These characteristics can be measured at dc or at low frequencies
and thus are called static characteristics.
The dynamic effect that limit the operation of the MOSFET at high
frequencies and high switching speeds will be discussed in Section
3.8.
2015/2/23
Chih-Wen Lu
50
3.2 Current-Voltage Characteristics (contd)

Circuit Symbol
(a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source
terminal to distinguish it from the drain and to indicate device
polarity (i.e., n channel). (c) Simplified circuit symbol to be used
when the source is connected to the body or when the effect of the
body on device operation is unimportant.
2015/2/23
Chih-Wen Lu
51

The iD vDS Characteristics
There are three distinct regions of operation: the cutoff region, the
triode region, and the saturation region.
The saturation region is used if FET is to operate as an amplifier.
For operation as a switch, the cutoff and triode regions are utilized.
2015/2/23
Chih-Wen Lu
52

To operate the MOSFET in the triode region we must first induce a
channel.
vGS Vt (Induced channel)
And then keep vDS small enough so that the channel remains
continuous.
This is achieved by ensuring that the gate-to-drain voltage is
vGD Vt (Continuous channel)

vGS vDS Vt
vDS vGS Vt
Continuous channel
vGD vGS vSD

vGS vDS
W
1 2
iD k
vGS Vt vDS vDS
L
2
'
n
where kn = mnCox is the process transconductance parameter;

2015/2/23
Chih-Wen Lu
53

If vDS is sufficiently small so that we can neglect the v2DS term.
iD
W
k
vGS Vt vDS
L
'
n
This linear relationship represents the operation of the MOS transistor

as a linear resistance rDS,
rDS
vDS
iD
'W
vDS small kn
L vGS Vt
vGS VGS
whose value is controlled by vGS.
2015/2/23
Chih-Wen Lu
54
It is also useful to express rDS in terms of the gate-to-source overdrive

Voltage,
VOV VGS Vt
as
rDS
' W
1 kn
L
2015/2/23
VOV
Chih-Wen Lu
55

To operate the MOSFET in the saturation, a channel must be induced,
vGS Vt
Induced channel
and pinched off at the drain end by raising vDS to a value that results
in the gate-to-drain voltage falling below Vt,
vGD Vt
Pinched off channel
This condition can be expressed explicitly in terms of vDS as
vDS vGS Vt
2015/2/23
Pinched off channel
Chih-Wen Lu
56

The boundary between the triode region and the saturation region is
characterized by
vDS vGS Vt
2015/2/23
Boundary
Chih-Wen Lu
57

Substituting the value of vDS into
W
1 2
iD k
vGS Vt vDS vDS
L
2
'
n
Gives the saturation value of the current iD as
1 'W
2
iD kn vGS Vt
2 L
Thus in saturation the MOSFET
provides a drain current whose
value is independent of the drain
voltage vDS and is determined
by the gate voltage vGS according
to the square-law relationship.
2015/2/23
Chih-Wen Lu
58

1 'W
2
iD kn vGS Vt
2 L
Figure The iDvGS

characteristic for an
enhancement-type NMOS
transistor in saturation (Vt = 1
V, kn W/L = 1.0 mA/V2).
2015/2/23
Chih-Wen Lu
59
Figure Large-signal equivalent-circuit model of an n-channel MOSFET

operating in the saturation region.
2015/2/23
Chih-Wen Lu
60

Referring back to the iD-vDS characteristics, we note
that the boundary between the triode and the saturation regions is
shown as a broken-line curve. Since this curve is characterized by
vDS = vGS Vt, its equation can be found by substituting for vGS Vt
by in either the triode-region equation or the saturationregion equation.
This result is
1 'W 2
iD kn vDS
2 L
2015/2/23
Chih-Wen Lu
61
The relative levels of the terminal voltages of the enhancement

NMOS transistor for operation in the triode region and in the
saturation region.
Figure The relative levels of

the terminal voltages of the
enhancement NMOS
transistor for operation in the
triode region and in the
saturation region.
2015/2/23
Chih-Wen Lu
62

Finite Output Resistance in Saturation
Figure Increasing vDS beyond vDSsat causes the channel pinch-off point to move slightly away from the drain, thus
reducing the effective channel length (by DL).
Note, however, that (with depletion-layer widening) the channel

length is in effect reduced, from L to L-L, a phenomenon known
as channel-length modulation.
2015/2/23
Chih-Wen Lu
63
1
W
iD kn
(vGS Vt ) 2
2 L L
1 W
1
kn
(vGS Vt ) 2
2 L 1 (L / L)
1 W
kn
2 L
2015/2/23
L
2
1
(
v
V
)
t
GS
L
Chih-Wen Lu
64
where we have assumed that (L / L)
1, if we
assume that L is proportional to vDs ,

L vDS
where is a process-technology parameter with the
dimension of m m/V, we obtain for iD ,
1 W
iD kn 1 vDS (vGS Vt ) 2
2 L
L
Usually, / L is denoted ,
L
2015/2/23
Chih-Wen Lu
65
1 'W
2
iD kn vGS Vt 1 vDS
2 L
2015/2/23
Chih-Wen Lu
66

1 'W
2
iD kn vGS Vt 1 vDS
2 L
Figure Effect of vDS on iD in
the saturation region. The
MOSFET parameter VA
depends on the process
technology and, for a given
process, is proportional to the
channel length L.
2015/2/23
Chih-Wen Lu
67

From this figure we observe that when the straight-line iD-vDS
characteristics are extrapolated they intercept the vDS-axis at the
point vDS = -VA, where VA is a positive voltage.
VA
2015/2/23
Chih-Wen Lu
68

VA VA L
where V /A is entirely process-technology dependent with the
dimensions of V/m m.
1
iD
ro
vDS vGS constant

k W
2
ro
VGS Vt
2 L
'
n
VA
1
ro
ID ID
2015/2/23
Thus the output resistance is inversely

proportional to the dc bias current ID.
Chih-Wen Lu
69
Figure 4.17 Large-signal equivalent circuit model of the n-channel MOSFET in saturation,
incorporating the output resistance ro. The output resistance models the linear dependence of iD on vDS
and is given by Eq. (4.22).
2015/2/23
Chih-Wen Lu
70

Characteristics of the p-Channel MOSFET
2015/2/23
Figure (a) Circuit symbol for the pchannel enhancement-type

MOSFET. (b) Modified symbol with
an arrowhead on the source lead. (c)
Simplified circuit symbol for the
case where the source is connected to
the body. (d) The MOSFET with
voltages applied and the directions of
current flow indicated. Note that vGS
and vDS are negative and iD flows out
of the drain terminal.Chih-Wen Lu
71

To induce a channel
vGS Vt Induced-channel
where the threshold voltage Vt is negative.
or, equivalently,
vSG V
To operate in the triode region vDS must satisfy
vDS vGS Vt Continuous channel
2015/2/23
Chih-Wen Lu
72
Current (triode region)
W
1 2
iD k
vGS Vt vDS vDS
L
2
'
p
where vGS, Vt, and vDS are negative and the transconductance
parameter kp is given by
k p' m pCOX
where mp is the mobility of holes in the induced p-channel.
2015/2/23
Chih-Wen Lu
73
To operate in saturation, vDS must satisfy the relationship.
vDS vGS Vt
Pinched off channel
Current
1 ' W
2
iD k p vGS Vt 1 vDS
2 L
where vGS, Vt, , and vDS are all negative.
2015/2/23
Chih-Wen Lu
74

Relative levels of the terminal voltage of the enhancement-type
PMOS transistor for operation in the triode region and in the
saturation region.
Figure The relative levels of the

terminal voltages of the
enhancement-type PMOS
transistor for operation in the
triode region and in the saturation
region.
2015/2/23
Chih-Wen Lu
75

The Role of the Substrate The body Effect
In many applications the substrate terminal is connected to the
source terminal, which results in the pn junction between the
substrate and the induced channel having a constant zero bias.
In such a case the substrate does not play any role in circuit
operation and its existence can be ignored altogether.
2015/2/23
Chih-Wen Lu
76

In integrated circuits, the substrate is usually connected to the most
negative power supply in an NMOS circuit.
The resulting reverse-bias voltage between source and body (VSB)
in an n-channel device) will have an effect on device operation.
2015/2/23
Chih-Wen Lu
77

The reverse bias voltage will widen the depletion region.
The effect of VSB on the channel can be most conveniently
represented as a change in the threshold voltage Vt.
Increasing VSB results in an inverse in Vt according to the relationship
Vt Vt 0 g 2f f VSB 2f f
where Vt0 is the threshold voltage for VSB = 0; ff is a physical

parameter with (2 ff) typically 0.6; g is a fabrication-process parameter
given by
2qN Ae s
COX
where NA is the doping concentration of the p-type substrate, and es

is the permittivity of silicon.
2015/2/23
Chih-Wen Lu
78
3.3 MOSFET Circuits at DC

Having studied the current-voltage characteristics of MOSFETs,
we now consider circuits in which only dc voltages and currents
are of concern.
2015/2/23
Chih-Wen Lu
79
3.3 MOSFET Circuits at DC (contd)

Example
Design the circuit so that the transistor
operates at ID = 0.4 mA and VD = +0.5 V.
The NMOS transistor has Vt = 0.7 V, mnCox =
100 m A/V2, L = 1 m m, and W = 32 m m.
Neglect the channel-length modulation effect
(i.e., assume that = 0).
2015/2/23
Chih-Wen Lu
80

Solution
Since VD = 0.5 V is greater than VG, this means the NMOS
transistor is operating in the saturation region, and we use the
saturation-region expression of iD to determine the required value
of iD to determine the required value of VGS,
1
W
I D mnCox (VGS Vt )2
2
L
1
32 2
400 100 VOV
2
1
which results in
VOV 0.5 V
Thus,
VGS Vt VOV 0.7 0.5 1.2 V
2015/2/23
Chih-Wen Lu
81

The gate is at ground potential. Thus the source must be at -1.2V, and
the required value of RS can be determined from
VS VSS
RS
ID
1.2 (2.5)
3.25 kW
0.4
To establish a dc voltage of +0.5 V at the drain,
we must select RD as follows:
VDD VD
RD
ID
2.5 0.5
5 kW
0.4
2015/2/23
Chih-Wen Lu
82

Example
Design the circuit in this figure to obtain a current ID of 80 m A.
Find the value required for R, and find the dc voltage VD. Let the
NMOS transistor have Vt = 0.6 V, mnCox = 200 m A/V2, L = 0.8 m m,
and W = 4 m m. Neglect the channel-length modulation effect (i.e.,
assume = 0).
2015/2/23
Chih-Wen Lu
83

Solution:
1
W
I D mnCox (VGS Vt ) 2
2
L
1
W 2
mnCox VOV
2
L
VOV
2I D
mnCox (W / L)
2 80
0.4 V
200 (4 / 0.8)
VGS Vt VOV 0.6 0.4 1 V
VD VG 1 V
VDD VD
R
ID
2015/2/23
Chih-Wen Lu
3 1
25 kW
0.080
84

Example
Design the circuit in this figure to establish a drain voltage of 0.1 V.
What is the effective resistance between drain and source at this
operating point? Let Vt = 1 V and k /n ( W / L ) = 1 mA/V2.
2015/2/23
Chih-Wen Lu
85

Solution:
Since the drain voltage is lower than the gate voltage by 4.9 V and Vt =
1 V, the MOSFET is operating in the triode region. Thus the current ID
is given by
1
2
(VGS Vt )VDS 2 VDS
1
I D 1 (5 1) 0.1 0.01 0.395 mA

2
VDD VD 5 0.1
RD
12.4 kW
ID
0.395
I D kn
W
L
Since the transistor is operating in the triode region with a small VDS,
the effective drain-to-source resistance can be determined as follows:
VDS
0.1
rDS
253 W
I D 0.395
2015/2/23
Chih-Wen Lu
86

Example
Analyze the circuit shown in this figure to determine the voltages at
all nodes and the currents through all branches. Let Vt = 1 V and k /n
( W / L ) = 1 mA/V2. Neglect the channel-length modulation effect
(i.e., assume = 0).
2015/2/23
Chih-Wen Lu
87

Solution
Since the gate current is zero, the voltage at the gate is simply
determined by the voltage divider formed by the two 10-MW
resistors,
R
10
VG VDD
2015/2/23
G2
RG 2 RG1
10
Chih-Wen Lu
10 10
5 V
88

which this positive voltage at the gate, the NMOS transistor will be
turned on. We do not know, however, whether the transistor will be
operating in the saturation region or in the triode region. We shall
assume saturation-region operation, solve the problem, and then check
the validity of our assumption. Obviously, if our assumption turns out
not to be valid, we will have to solve the problem again for trioderegion operation. Refer to the previous figure. Since the voltage at the
gate is 5 V and the voltage at the source is ID (mA) X 6 (kW) = 6 ID, we
have
VGS 5 6I D
Thus ID is given by
2015/2/23
1 W
I D kn (VGS Vt ) 2
2 L
1
1 (5 6 I D 1) 2
2
Chih-Wen Lu
89

which results in the following quadratic equation in ID:
18I D2 25I D 8 0
This equation yields two values for ID : 0.89 mA and 0.5 mA. The first
value results in a source voltage of 6 X 0.89 = 5.34, which is greater
than the gate voltage and does not make physical sense as it would
imply that the NMOS transistor is cut off. Thus,
I D 0.5 mA
VS 0.5 6 3 V
VGS 5 3 2 V
VD 10 6 0.5 7 V
Since VD > VG Vt, the transistor is
operating in saturation, as initially assumed.
2015/2/23
Chih-Wen Lu
90

Example
Design the circuit of this figure so that the transistor operates in
saturation with ID = 0.5 mA and VD = +3 V. Let the enhancementtype PMOS transistor have Vt = -1 V and k /n ( W / L ) = 1 mA/V2 .
Assume = 0. What is the largest value that RD can have while
maintaining saturation- region operation?
2015/2/23
Chih-Wen Lu
91

Since the MOSFET is to be in saturation, we can write
1 W
I D k p (VGS Vt ) 2
2
L
1 W 2
k p VOV
2
L
Substituting ID : 0.5 mA and k /p W / L = 1 mA/V2 and recalling that for
a PMOS transistor VOV is negative, we obtain
and
VOV 1 V
VGS Vt VOV 1 1 2 V
Since the source is at +5 V, the gate voltage must be set to +3 V. Thus

can be achieved by the appropriate selection of the values of RG1 and
RG2. and possible selection is RG1 = 2 MW and RG2 = 3 MW.
2015/2/23
Chih-Wen Lu
92
The value of RD can be found from

VD
3
RD
6 kW
I D 0.5
Saturation-mode operation will be maintained up to the point that VD
exceeds VG by |Vt|; that is, until
VD max 3 1 4 V
This value of drain voltage is obtain with RD given by
2015/2/23
4
RD
8 kW
0.5
Chih-Wen Lu
93

Example
The NMOS and PMOS transistors in the circuit of Fig. 4.25(a) are
/
/
matched with k n ( Wn / Ln ) = k p ( Wp / Lp ) = 1 mA/V2 and Vtn = Vtp = 1 V. Assuming = 0 for both devices, find the drain currents
iDN and iDP, as well as the voltage vO, for vI = 0 V, +2.5 V, and -2.5
V.
2015/2/23
Chih-Wen Lu
94

Solution
The circuit for the case vI = 0 V. We note that since QN and QP are
perfectly matched and are operating at equal |VGS| (2.5 V), the circuit is
symmetrical, which dictates that vO = 0 V. Thus both QN and QP are
operating with |VDG| = 0 and, hence, in saturation. The drain currents
can be found from
I DP
2015/2/23
1
I DN 1 (2.5 1) 2
2
1.125 mA
Chih-Wen Lu
95

Next, we consider the circuit with vI = +2.5 V. Transistor QP will have
a VGS of zero and thus will be cut off, reducing the circuit to that shown
here. We note that vO will be negative, and thus vGD will be greater than
Vt, causing QN to operate in the triode region. For simplicity we shall
assume that vDS is small and thus use
I DN kn (Wn / Ln )(VGS Vt )VDS

1[2.5 (2.5) 1][vO (2.5)]
From the circuit diagram shown in Fig. 4.25(c),
we can also write
I DN
2015/2/23
0 vO
(mA)
10 (kW)
Chih-Wen Lu
96

These two equations can be solved simultaneously to yield
I DN 0.244 mA
vO -2.44 V
Note that VDS = -2.44 (-2.5) = 0.06 V. Which is small as assumed.

Finally, the situation for the case vI = -2.5 V will be the exact
complement of the case vI = +2.5 V: Transistor QN will be cut off. Thus
IDN = 0, QP will be operating in the triode region with IDP = 2.44 mA
and vO = +2.44 V.
2015/2/23
Chih-Wen Lu
97
3.4 The MOSFET as an Amplifier and as a Switch

In this section we begin our study of the use of MOSFETs in the
design of amplifier circuits. The basis for this important MOSFET
application is that when operated in the saturation region, the
MOSFET acts as a voltage-controlled current source: Change in the
gate-to-source voltage vGS give rise to changes in the drain current
iD. Thus the saturated MOSFET can be used to implement a
transconductance amplifier.
We will study the total or large-signal operation of a MOSFET
amplifier. We will do this by deriving the voltage transfer
characteristic of a commonly used MOSFET amplifier circuit.
From the voltage transfer characteristic we will be able to clearly
see the region over which the transistor can be biased to operate as
a small-signal amplifier as well as those regions where it can be
operated as a switch.
2015/2/23
Chih-Wen Lu
98
3.4 The MOSFET as an Amplifier and as a Switch (contd)

Large-Signal Operation-The Transfer Characteristic
Figure (a) Basic structure of the common-source amplifier. (b) Graphical construction to
determine the transfer characteristic of the amplifier in (a).
2015/2/23
Chih-Wen Lu
99
vO vDS VDD RDiD
2015/2/23
Chih-Wen Lu
100

Graphical Derivation of the Transfer Characteristic
vDS VDD RDiD

VDD 1
iD
vDS
RD RD
The straight line intersects
the vDS -axis at VDD [since
vDS VDD at iD 0]
and has a slope of -1/RD
2015/2/23
Chih-Wen Lu
101

The graphical construction
can now be used to determine vO (equal to
vDS ) for each given value of vI (vGS vI ).
vGS vI , vI Vt , cut off, iD 0, and
vO vDS VDD . Operate at point A.
vI exceed Vt , turn on, iD increases, and vO
decreases, operate at saturation region,
from A to B.
A particular point :Q. VGS VIQ and has
the coordinates VOQ VDSQ and I DQ .
2015/2/23
Chih-Wen Lu
102

Saturation-region operation continues
until vO decreases to the point that it
is below vIB by Vt volts. vDS vGS Vt ,
enters triode region, point B.
VOB VIB Vt
vI VIB , deeper in to triode region,
output voltage decreases slowly
towards zero.
Point C, vI VDD
2015/2/23
Chih-Wen Lu
103

When the MOSFET is used
as a switch, it is operated at
the extreme points of the
transfer curve.
Specifically, the device is
turned off by keeping vI < Vt
resulting in operation
somewhere on segment XA
with vO = VDD.
The switch is turned on by
applying a voltage close to
VDD, resulting in operation
close to point C with vO very
small ( at C, vO = VOC ).
2015/2/23
Figure (Continued) (c) Transfer

characteristic showing operation as an
amplifier biased at point Q.
Chih-Wen Lu
104

Operation as a linear
Amplifier
dvO
Av
dvI
2015/2/23
vI VIQ
Chih-Wen Lu
105
Figure Two load lines and corresponding bias points. Bias point Q1 does not leave sufficient room for
positive signal swing at the drain (too close to VDD). Bias point Q2 is too close to the boundary of the
triode region and might not allow for sufficient
negative
2015/2/23
Chih-Wen
Lu signal swing.
106

Analytical Expressions for the Transfer Characteristic
The Cutoff-Region Segment, XA , vI Vt, and vO = VDD.

The Saturation-Region Segment, AQB , vI Vt, and vO vI Vt . Neglecting channel-length modulation and substituting for
iD from
into
gives
1
W
iD ( mnCox )
2
L
2
(
v
V
)
t
I
vO VDD RDiD
1
W
vO VDD RD mnCox (VI Vt )2
2
L
2015/2/23
Chih-Wen Lu
107

dvO
A v
dvI
vI VIQ
W
Av RD mnCox (VIQ Vt )
L
VIQ Vt VOV
Av
2(VDD VOQ )
VOV
2VRD
VOV
VRD VDO VOQ

The end point of the saturation-region segment
is characterized by
VOB VIB Vt
2015/2/23
Chih-Wen Lu
108

The Triode-Region Segment, BC, vI Vt, and vO vI
- Vt .
W
1 2
(
v
V
)
v
vO
I
t
O
L
2
vO VDD RD iD
iD mnCox
W
1 2
(
v
V
)
v
vO
I
t
O
L
2
The portion of this segment for which vO is small is given aproximately by
vO VDD RD mnCox
W
vO VDD RD mnCox (vI Vt )vO
L
which reduces to
W
vO VDD 1 RD mnCox (vI Vt )

L
2015/2/23
Chih-Wen Lu
109
rDS 1 mnCox (vI Vt )

L
rDS
vO VDD
rDS RD
rDS
RD
vO VDD
2015/2/23
rDS
RD
Chih-Wen Lu
110

Example
To make the above analysis more
concrete we consider a numerical
example. Specifically, consider the CS
circuit for the case k /n ( W / L ) = 1 mA/V2
, Vt = 1 V, RD = 18 kW, and VDD = 10 V.
2015/2/23
Chih-Wen Lu
111

Solution
First, we determine the coordinates of important points on the transfer
curve.
(a) Point X:
(b) Point A:
vI 0 V,
vO 10 V
vI 1 V,
vO 10 V
(c) Point B: Substituting
vI VIB VOB Vt VOB 1
vO VOB
2
9VOB
VOB 10 0
VOB 1 V
VIB 1 1 2 V
2015/2/23
Chih-Wen Lu
112

(d) Point C:
VOC
10
0.061 V
1 18 1 (10 1)
Next, we bias the amplifier to operate at an appropriate point on the

saturation-region segment. Since this segment extends from vO = 1 V
to 10 V, we choose to operate at VOQ = 4 V.
ID
2015/2/23
VDD VOQ
RD
10 4
0.333 mA
18
Chih-Wen Lu
113
We can find the required overdrive voltage VOV from

1 W 2
I D kn VOV
2 L
2 0.333
VOV
0.816 V
1
Thus, we must operate the MOSFET at a dc gate-to-source voltage
VGSQ Vt VOV 1.816 V

The voltage-gain of the amplifier at this bias point:
AV 18 1 (1.816 1)
14.7 V/V
2015/2/23
Chih-Wen Lu
114
At vGS 1.741 V, iD 12 1 (1.741-1) 2 0.275 mA

At vGS 1.816 V, iD 12 1 (1.816-1) 2 0.333 mA
At vGS 1.891 V, iD 12 1 (1.891-1) 2 0.397 mA
At vGS 1.741 V, iD 0.275 mA, and vO 10 0.275 18 5.05 V
At v
2015/2/23 GS
1.891 V, iD 0.397 mA, and vO 10 0.397 18 2.85 V

Chih-Wen Lu
115
2015/2/23
Chih-Wen Lu
116

A Final Remark on Biasing
In the above example, the MOSFET was assumed to be biased at a
constant vGS of 1.816 V. Although it is possible to generate a
constant bias voltage using an appropriate voltage-divider network
across the power supply VDD or across another reference voltage
that may be available in the system, fixing the value of vGS is not a
good biasing technique.
2015/2/23
Chih-Wen Lu
117
3.5 Biasing in MOS Amplifier Circuit

As mentioned in the previous section, an essential step in the
design of a MOSFET amplifier circuit is the establishment of an
appropriate dc operating point for the transistor. This is the step
known as biasing or bias design. An appropriate dc operating point
or bias point is characterized by a stable and predictable dc drain
current ID and by a dc drain-to-source voltage VDS that ensures
operation in the saturation region for all expected input-signal
levels.
2015/2/23
Chih-Wen Lu
118
3.5 Biasing in MOS Amplifier Circuit (contd)

Biasing by Fixing VGS
1
W
I D mnCox (VGS Vt )2
2
L
Figure The use of
fixed bias (constant
VGS) can result in a
large variability in the
value of ID. Devices 1
and 2 represent
extremes among units
of the same type.
2015/2/23
Chih-Wen Lu
119

Biasing by Fixing VG and Connecting a Resistance in the Source
VG VGS RS I D
Figure Biasing using a fixed voltage at the gate, VG, and a resistance in the source lead, RS: (a) basic
arrangement; (b) reduced variability in ID; (c) practical implementation using a single supply;
2015/2/23
Chih-Wen Lu
120
Figure (c) practical implementation using a single supply; (d) coupling of a signal source to
the gate using a capacitor CC1; (e) practical implementation using two supplies.
2015/2/23
Chih-Wen Lu
121

Example
It is required to design the circuit to establish a
dc drain current ID = 0.5 mA. The MOSFET is
specified to have Vt = 1 V and k /n W / L = 1 mA/V2 .
For simplicity, neglect the channel-length modulation
effect (i.e., assume = 0). Use a power-supply VDD = 15
V. Calculate the percentage change in the value of ID
obtained when the MOSFET is replaced with another unit
/
having the same k n W / L but Vt = 1.5 V.
2015/2/23
Chih-Wen Lu
122

Solution
For VDD 15 V, this choice makes

VD 10 V and VS 5 V.
VDD VD 15 10
RD
10 kW
ID
0.5
VS
5
RD
10 kW
RS 0.5
2
I D 12 kn (W / L)VOV
2
0.5 12 1 VOV
VOV 1 V
VGS Vt VOV 1 1 2 V
VG VS VGS 5 2 7 V
2015/2/23
Chih-Wen Lu
Figure 4.31 Circuit for Example 4.9.

123

We may select RG1 8 MW and RG 2 7 MW.
The dc voltage at the drain (+10 V) allows for
a positive signal swing of +5 V (up to VDD ) and
a negative signal swing of -4 V [down to (VG Vt )]
If the NMOS transistor is replaced with another
having Vt 1.5 V:
I D 12 1 (VGS 1.5) 2
VG VGS I D RS
7 VGS 10 I D
I D 0.455 mA
I D 0.455 0.5 0.045 mA
0.045
which is
100 9% change.
0.5
2015/2/23
Chih-Wen Lu
124

Biasing Using a Drain-to-Gate Feedback Resistor
VGS VDS VDD RD I D

VDD VGS RD I D
Figure Biasing the MOSFET using a large

drain-to-gate feedback resistance, RG.
2015/2/23
Chih-Wen Lu
125

Biasing Using a Constant-Current Source
The heart of the circuit is transistor Q1 ,

whose drain is shorted to its gate and
thus is operating in the saturation
region, such that
1 W
kn (VGS Vt ) 2
2 L 1
assume 0. The drain current of Q1
I D1
is supplied by VDD through resistor R.

Since the gate current are zero,
I D I REF
2015/2/23
VDD VSS VGS
Figure (a) Biasing the MOSFET using a constantcurrent source I. (b) Implementation of the constantChih-Wen Lu current source I using a current mirror.
126

Now consider transistor Q2 :
It has the same as :thus if we
assume that it is operating in
saturation, its drain current,
which is the desired current
of the current source, will be
I ID2
1 W
kn (VGS Vt ) 2
2 L 2
(W / L) 2
I I R EF
(W / L)1
2015/2/23
Chih-Wen Lu
127

A Final remark
The bias circuit studied in this section are intended for discretecircuit application. The only exception is the current mirror circuit
which, as mentioned above, is extensively used in IC design.
2015/2/23
Chih-Wen Lu
128
3.6 Small-Signal Operation and Models

In our study of the large-signal operation of the common-source
MOSFET amplifier in Section 3.4 we learned that linear
amplification can be obtained by biasing the MOSFET to operate
in the saturation region and by keeping the input signal small.
Having studied methods for biasing the MOS transistor in the
previous section, we now turn our attention to exploring smallsignal operation in some detail.
2015/2/23
Chih-Wen Lu
129
3.6 Small-Signal Operation and Models (contd)

Here the MOS transistor is biased by applying a dc voltage VGS, a
clearly impractical arrangement but one that is simple and useful
for our purposes. The input signal to be amplified, vgs, is shown
superimposed on the dc bias voltage VGS. The output voltage is
taken at the drain.
Figure Conceptual circuit

utilized to study the operation
of the MOSFET as a smallsignal amplifier.
2015/2/23
Chih-Wen Lu
130

The DC Bias Point
Set the vgs to zero, thus

1 W
I D kn (VGS Vt ) 2
2 L
0, VDS or simply VD (since S is grounded), will be
VD VDD RD I D
To ensure saturation-region operation, we must have
VD VGS Vt
2015/2/23
Chih-Wen Lu
131

The Signal Current in the Drain Terminal
vgs is applied, the total instantaneous gate-to-source voltage:
vGS VGS vgs
total instantaneous drain current:
1 W
iD kn (VGS vgs Vt ) 2
2 L
1 W
W
1 W 2
2
kn (VGS Vt ) kn (VGS Vt )vgs kn vgs

2 L
L
2 L
To reduce the nonlinear distortion, the input signal should be
kept small so that
1 W 2
W
kn vgs kn (VGS Vt )vgs

2 L
L
vgs 2(VGS Vt ) or, equivalently, vgs
2015/2/23
Chih-Wen Lu
2VOV
132

If the small-signal condition is satisfied,
iD I D id
where
W
(VGS Vt )vgs
L
id
W
gm
kn (VGS Vt )
vgs
L
id kn
in terms of the overdrive voltage VOV ,

W
g m kn VOV
L
2015/2/23
Chih-Wen Lu
133
iD
gm
vGS
vGS VGS
Figure Small-signal operation of the

enhancement MOSFET amplifier.
2015/2/23
Chih-Wen Lu
134

The Voltage Gain
vD VDD RD iD
vD VDD RD ( I D iD )
vD VD RD id
vd id RD g m vgs RD
vd
Av
g m RD
vgs
2015/2/23
Chih-Wen Lu
135
vd
Av
g m RD
vgs
2015/2/23
Chih-Wen Lu
136

Separating the DC Analysis and the Signal Analysis
From the preceding analysis, we see that under the small-signal
approximation, signal quantities are superimposed on dc quantities.
It follows that the analysis and design can be greatly simplified by
separating dc or bias calculations from small-signal calculation.
2015/2/23
Chih-Wen Lu
137

Small-Signal Equivalent-Circuit Models
ro
VA
ID
Figure Small-signal models for the MOSFET: (a) neglecting the dependence
of iD on vDS in saturation (the channel-length modulation effect); and (b)
including the effect of channel-length modulation, modeled by output
resistance ro = |VA| /ID.
ro
2015/2/23
VA
ID
1 W 2
I D kn VOV
2 L
Chih-Wen Lu
vd
Av
g m ( RD ro )
vgs
138

The Transconductance gm
g m kn (W / L)(VGS Vt ) kn (W / L)VOV
substitute (VGS Vt ) by 2 I D /( kn (W / L))
g m 2kn W / L I D
This expression shows that
1. For a given MOSFET, g m is proportional to the square
root of the dc bias current.
2. At a given bias current, g m is proportional to W / L .
Another useful expression for g m , substitute kn (W / L)
by 2 I D /(VGS Vt ) 2
2I D
2I D
gm
VGS Vt VOV
2015/2/23
Chih-Wen Lu
139

Example: We wish to analyze this amplifier circuit to determine its
small-signal voltage gain, its input resistance, and the largest
/
allowable input signal. The transistor has Vt = 1.5, k n ( W / L ) =
0.25 mA/V2 , and VA = 50 V. Assume the coupling capacitors to be
sufficiently large so as to act as short circuits at the signal
frequencies of interest.
2015/2/23
Chih-Wen Lu
140

Solution
I D 12 0.25(VGS 1.5) 2
VGS VD
I D 0.125(VD 1.5) 2
VD 15 RD I D 15 10 I D
I D 1.06 mA and VD 4.4 V
W
g m kn (VGS Vt )
L
0.25(4.4 1.5) 0.725 mA/V
VA
50
ro
47 kW
I D 1.06
2015/2/23
Chih-Wen Lu
141

vo
g m vgs ( RD RL ro )
vgs vi
vo
Av g m ( RD RL ro )
vi
0.725(10 10 47) 3.3 V/V
ii (vi vo ) / RG
vi
RG
vo
1
vi
vi
4.3vi
[1 (3.3)]
RG
RG
vi RG 10
Thus, Rin
2.33 MW
ii 4.3 4.3
2015/2/23
Chih-Wen Lu
142

The largest allowable input signal vi is determined by the need
to keep the MOSFET in saturation at all times; that is
vDS vGS Vt
Enforcing this condition, with equality, at the point vGS is maximum
and vDS is correspondingly minimum, we write
vDS min vGS max Vt
which results in
vi 0.34 V
In that in the negative direction, this input signal amplitude results in
vGS min 4.4 0.34 4.06 V
the
maximum allowable input signal
peakLuis 0.34 V.
2015/2/23
Chih-Wen
143

The T Equivalent-Circuit Model
Figure Development of the T

equivalent-circuit model for
the MOSFET. For simplicity,
ro has been omitted but can be
added between D and S in the
T model of (d).
2015/2/23
Chih-Wen Lu
144
Figure (a) The T model of the MOSFET augmented with the drain-to-source
resistance ro. (b) An alternative representation of the T model.
2015/2/23
Chih-Wen Lu
145

Modeling the Body Effect
The signal vbs gives rise to a drain-current component, which we
shall write as gmbvbs, where gmb is the body transconductance,
defined as
g mb
2015/2/23
iD
vBS
v constant
GS
vDS constant
Chih-Wen Lu
146
g mb g m
where
Vt
g
VSB 2 2f f VSB
2015/2/23
Figure Small-signal equivalent-circuit

model of a MOSFET in which the source
is not connected to the body.
Chih-Wen Lu
147
3.7 Single-Stage MOS Amplifiers

Having studied MOS amplifier biasing and the small-signal
operation and models of the MOSFET amplifier , we are now ready
to consider the various configuration utilized in the design of MOS
amplifiers.
Discrete MOS amplifiers are easier to understand than their IC
counterparts for two main reasons: The separation between dc and
signal quantities is more obvious in discrete circuits, and discrete
circuits utilize resistors as amplifier load.
2015/2/23
Chih-Wen Lu
148
3.7 Single-Stage MOS Amplifiers (contd)

The Basic Structure
2015/2/23
Figure Basic structure of the circuit used

to realize single-stage discrete-circuit
MOS amplifier configurations.
Chih-Wen Lu
149

The Common-Source (CS) Amplifier
2015/2/23
Chih-Wen Lu
150
Figure (b) Equivalent circuit of the

amplifier for small-signal analysis.
ig 0
RG
Rin RG
vgs vi
vi vsig
2015/2/23
RG
Rin
Rin Rsig RG Rsig

Chih-Wen Lu
Rsig
vi vsig
vo g m vgs (ro RD RL )
151
Av g m (ro RD RL )
Avo g m (ro RD )
RG
Rin
Gv
Av
g m (ro RD RL )
Rin Rsig
RG Rsig
Rout ro RD
2015/2/23
Chih-Wen Lu
152
Figure (c) Small-signal analysis performed directly on the amplifier circuit with the
MOSFET model implicitly utilized.
2015/2/23
Chih-Wen Lu
153

The Common-Source Amplifier with a Source Resistance
Figure (a) Common-source amplifier with a

resistance RS in the source lead.
2015/2/23
Chih-Wen Lu
154
Figure (b) Small-signal equivalent

circuit with ro neglected.
2015/2/23
Chih-Wen Lu
155
Rin Ri RG
vi vsig
2015/2/23
RG
RG Rsig
vgs vi
Chih-Wen Lu
1
gm
1
Rsig
gm
vi
1 g m Rs
156
vi
g m vi
id i
1
RS 1 g m Rs
gm
g m ( RD RL )
Av
1 g m Rs
vo id ( RD RL )
g m ( RD RL )
1 g m Rs
g m RD
Avo
1 g m Rs
RG
g m ( RD RL )
Gv
RG Rsig 1 g m Rs
2015/2/23
Chih-Wen Lu
157

The Common-Gate (CG) Amplifier
2015/2/23
Chih-Wen Lu
158
Figure (b) A small-signal equivalent circuit

of the amplifier in (a).
2015/2/23
Chih-Wen Lu
159
1
Rin
gm
vi vsig
vi vsig
2015/2/23
1
gm
1
Rsig
gm
Chih-Wen Lu
Rin
Rin Rsig
1
vsig
1 g m Rsig
160
1
gm
Rsig
ii
1
gm
Av
Rin
Gv
Av
Av
1
Rin Rsig
1 g m Rsig
Rsig
gm
vi
v
i g m vi
Rin 1/ g m
Gv
g m ( RD RL )
1 g m Rsig
id i ii g m vi
vo vd id ( RD RL ) g m ( RD RL )vi
Rout Ro RD
Av g m ( RD RL )
Avo g m RD
2015/2/23
Chih-Wen Lu
161
ii isig
Rsig
Rsig Rin
Normally, Rsig
isig
Rsig
1
Rsig
gm
1/ g m
ii isig
Figure (c) The common-gate amplifier

fed with a current-signal input.
2015/2/23
Chih-Wen Lu
162

The Common-Drain or Source-Follower Amplifier
Figure (a) A common-drain or source-follower amplifier.

2015/2/23
Chih-Wen Lu
163
Rin RG
vi vsig
RG
Rin
vsig
Rin Rsig
RG Rsig
vi vsig
2015/2/23
Figure (b) Small-signal equivalent-circuit model.

Chih-Wen Lu
164

vo vi
Av
Avo
RL ro
( RL ro )
1
gm
RL ro
( RL ro )
1
gm
ro
1
ro
gm
Normally ro
1/ g m , Avo
1. Also, in many
discrete-circuit application, ro
Av
RL ,
RL
RL
2015/2/23
1
gm
Chih-Wen Lu
165
RG
RL ro
Gv
RG Rsig ( R r ) 1
L
o
gm
which approaches unity for
RG Rsig , ro 1 / g m , and ro
2015/2/23
RL .
Chih-Wen Lu
166
Figure (c) Small-signal analysis performed directly on the circuit.

2015/2/23
Chih-Wen Lu
167
Rout
ro
gm
Normally, ro
Rout
gm
2015/2/23
1/ g m , reducing Rout to
Figure (d) Circuit for determining the output
resistance
Rout of the source follower. 168
Chih-Wen
Lu
3.8 The MOSFET Internal Capacitances and High-Frequency Model
There are basically two types of internal capacitances in

the MOSFET:
1. The gate capacitive effect: The gate electrode (polysilicon) forms
a parallel-plate capacitor with the channel, with the oxide layer
serving as the capacitor dielectric.
2. The source-body and drain-body depletion-layer capacitances:
These are the capacitances of the reverse-biased pn junction formed
by the n+ source region (also called the source diffusion) and the ptype substrate and by the n+ drain region (the drain diffusion) and
the substrate.
2015/2/23
Chih-Wen Lu
169
3.8 The MOSFET Internal Capacitances and High-Frequency Model (contd)
The Gate Capacitive Effect
2015/2/23
Chih-Wen Lu
170
The Junction Capacitances

For the source diffusion, we have the source-body capacitance:
Csb
Csb 0
VSB
1
V0
For the drain diffusion, we have the drain-body capacitance:

Cdb
Cdb 0
1
2015/2/23
VDB
V0
Chih-Wen Lu
171
The High-Frequency MOSFET Model
Figure (a) High-frequency equivalent

circuit model for the MOSFET.
(b) The equivalent circuit for the case in which

the source is connected to the substrate (body).
2015/2/23
Chih-Wen Lu
172
Figure (c) The equivalent circuit model of (b) with Cdb neglected (to simplify analysis).
2015/2/23
Chih-Wen Lu
173
The MOSFET Unity-Gain Frequency (fT)
Figure 4.48 Determining the short-circuit current gain Io /Ii.
Io
gm
I i s (Cgs Cgd )
I o g mVgs sCgdVgs
Io
T g m /(Cgs Cgd )
g mVgs
gm
fT
2 (Cgs Cgd )
Vgs I i / s (Cgs Cgd )

2015/2/23
Chih-Wen Lu
174
3.9 The CMOS Digital Logic Inverter

The basic CMOS inverter utilizes two matched enhancement-type
MOSFETs: one, QN, with an n channel and the other, QP, with a p
channel. The body of each device is connected to its source and
thus no body effect arises.
2015/2/23
Chih-Wen Lu
175
3.9 The CMOS Digital Logic Inverter (contd)

Circuit Operation
2015/2/23
Figure Operation of the CMOS

inverter when vI is high: (a) circuit
with vI = VDD (logic-1 level, or VOH);
(b) graphical construction to determine
the operating point; (c) equivalent
circuit.
Chih-Wen Lu
176
QN provides a low-resistance path between the
output terminal and ground, with the resistance

obtained using Eq. (4.13) as
W
rDSN 1 kn (VDD Vtn )

L n
Fig 5.54(c) shows the equivalent circuit of the

inverter when the input is high. This circuit
confirms that vO VOL 0 V and that the power
dissipation in the inverter is zero.
2015/2/23
Chih-Wen Lu
177
Figure Operation of the CMOS inverter when vI is low:

(a) circuit with vI = 0 V (logic-0 level, or VOL); (b)
graphical construction to determine the operating point;
(c) equivalent circuit.
2015/2/23
Chih-Wen Lu
178
Fig. 4.55(c) shows the equivalent circuit of the

inverter when the input is low. Here we see that
QP provides a low-resistance path between the
output terminal and the dc supply VDD , with the
resistance given by
W
rDSP 1 k p (VDD Vtp )

L p
The equivalent circuit confirms that in this case

vO VOH VDD and that the power dissipation in
the2015/2/23
inverter is zero.
Chih-Wen Lu
179

The Voltage Transfer Characteristic
Figure The voltage transfer characteristic of the CMOS inverter.

2015/2/23
Chih-Wen Lu
180

For QN ,
iDN
iDN
1 2
W
k vI Vtn vO vO
2
L n
1 W
2
kn' vI Vtn
2 L n
'
n
for vO vI Vtn
for vO vI Vtn
For QP ,
iDP
W
k VDD vI Vtp
L p
'
p
1
2
VDD vO VDD vO
2
for vO vI Vtp
iDP
1 ' W
k p VDD vI Vtp
2 L p
2015/2/23
for vO vI Vtp
Chih-Wen Lu
181

The CMOS inverter is usually designed to have
Vtn Vtp
W
' W
k kp
L n
L p
'
n
mn
Wn m p
Wp
2015/2/23
Chih-Wen Lu
182
Determine VIH
QN: triode region
QP: saturation region
1
W
iDN kn' vI Vtn vO vO2
2
L n
2
1 ' W
iDP k p VDD vI Vtp
2 L p
iDN iDP
1 2 1
2
vI Vt vO vO VDD vI Vt
2
2
2015/2/23
Chih-Wen Lu
183

1 2 1
2
vI Vt vO vO VDD vI Vt
2
2
Differentiating both sides relative to vI
dvO
dvO
vI Vtn vO vO
dvI
dvI
VDD vI Vt
Substituting vI = VIH
and dvO/d vI = -1
VDD
vO VIH
2
1
VIH 5VDD 2Vt
8
2015/2/23
Chih-Wen Lu
184

VIL can be determined in a manner similar to that used to find VIH.
Alternatively, we can use the
symmetry relationship
VDD VDD
VIH
VIL
2
2
1
VIL 3VDD 2Vt
8
2015/2/23
Chih-Wen Lu
185

The noise margins
NM H VOH VIH
1
VDD 5VDD 2Vt
8
1
3VDD 2Vt
8
NM L VIL VOL
1
3VDD 2Vt 0
8
1
3VDD 2Vt
8
2015/2/23
Chih-Wen Lu
186

Dynamic Operation
Dynamic Operation
2015/2/23
Chih-Wen Lu
Figure Dynamic
operation of a
capacitively loaded
CMOS inverter: (a)
circuit; (b) input and
output waveforms; (c)
trajectory of the
operating point as the
input goes high and C
discharges through
QN; (d) equivalent
circuit during the
187
capacitor discharge.
tPHL = tPHL1 + tPHL2

tPHL1:
vO = VDD ~ (VDD Vt)
Qn: saturation region
iDN
1 ' W
2
kn VDD Vt constant
2 L n
tPHL2 :
vO = (VDD Vt) ~ VDD/2)
Qn: triode region
iDN
1 2
W
k VDD Vt vO vO
2
L n
'
n
2015/2/23
Chih-Wen Lu
188

Calculate tPHL1
1
vO
C
t t PHL1
i dt V
DN
DD
t 0
t t PHL1
t 0
1 ' W
2
kn VDD Vt dt VDD
2 L n
1 1 ' W
2
kn VDD Vt t PHL1 VDD

C 2 L n
1 1 ' W
2
VDD Vt
kn VDD Vt t PHL1 VDD
C 2 L n
C VDD VDD Vt
CVt
t PHL1
1 ' W
1 ' W
2
2
kn VDD Vt
kn VDD Vt
2015/2/23
Chih-Wen Lu 2
2 L n
L n
189
Calculate tPHL2
dvO
iDN C
dt
iDN dt CdvO
1 2
W
k VDD Vt vO vO dt CdvO
2
L n
'
n
kn' W L n
2C
2015/2/23
dt
dvO
2 VDD Vt
2Chih-Wen
VDD LuVt
vO2 vO
190
kn' W L n
2C
t t PHL 2
dt
2 VDD Vt
kn' W L n
2C
t 0
kn' W L n
2C
dvO
dt
t PHL 2
2 VDD Vt
vO VDD 2
vO VDD Vt
vO2 vO
dvO
2 VDD Vt
2 VDD Vt
dvO
vO VDD 2
2 VDD Vt vO VDD Vt
vO2 vO
2 VDD Vt
vO2 vO
dx
1
ax 2 x ln 1 ax
3VDD 4Vt
t PHL 2 '
ln
2015/2/23k n W L VDD Vt Chih-Wen

VLuDD
n
C
191
tPHL tPHL1 tPHL 2

Vt
2C
1 3VDD 4Vt
'
ln
kn W L n VDD Vt VDD Vt 2 VDD
For the usual case of Vt = 0.2 VDD, this equation reduces to
tPHL
1.6C
'
kn W L n VDD
2015/2/23
Chih-Wen Lu
192

Current Flow and Power Dissipation
FigureThe current in the CMOS inverter versus the input

voltage.
2015/2/23
Chih-Wen Lu
193
At t = 0-, vO = VDD
Energy stored on the capacitor is 0.5CVDD2
At t = 0, vI goes high to VDD, the capacitor voltage is reduced to zero
During the discharge interval, energy of 0.5CVDD2 is removed from C
and dissipated in Qn.
2015/2/23
Chih-Wen Lu
194
When vI goes low to zero, QN turns off, and QP conducts and

charges the capacitor.
The energy drawn from the power supplied to the capacitor:
DD
idt VDD idt VDD Q
where Q is the charge supplied to the capacitor;

Q CVDD
Thus the energy drawn from the supply during the charging interval
is CVDD2.
2015/2/23
Chih-Wen Lu
195
At the end of the charging interval, the capacitor voltage will be

VDD, and thus the energy stored in it will be 0.5CVDD2 .
It follows that during the charging interval, half of the energy
drawn from the supply, 0.5CVDD2 , is dissipated in QP.
In every cycle, 0.5CVDD2 of energy is dissipated in QN and
0.5CVDD2 dissipated in QP, for a total energy dissipation in the
inverter of CVDD2 .
2015/2/23
Chih-Wen Lu
196
If the inverter is switched at the rate of f cycles per second, the

dynamic power dissipation in it will be
2
CVDD
PD
T
2
fCVDD
A figure of merit or a quality measure of the particular circuit

technology is the delay-power product (DP),
2015/2/23
DP PDChih-Wen
tP
Lu
197

MOSFETs 2015 02 23

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

MOSFETs 2015 02 23

Uploaded by

Copyright:

Available Formats

CHAPTER 3

MOS Field-Effect Transistors

In This Chapter You Will Learn

Device Structure and Physical.

3.1 Device Structure and Physical Operation

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

The drain current iD

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

Increasing vDS causes the channel to acquire a tapered shape.

3.1 Device Structure and Physical Operation (contd)

Derivation of the iDvDS

3.1 Device Structure and Physical Operation (contd)

where eox is the permittivity of the silicon oxide,

e ox 3.9e 0 3.9 8.854 1012 3.45 1011 F/m

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

where mn is the electron mobility in the channel.

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

This is the expression for the iD vDS characteristic in the triode

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

The drain current is proportional to the ratio of the channel width

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

VGS 0.7 0.32 V

VDS min VGS Vt 0.32 V

3.1 Device Structure and Physical Operation (contd)

VGS 0.7 0.52 V

3.1 Device Structure and Physical Operation (contd)

3.1 Device Structure and Physical Operation (contd)

Complementary MOS or CMOS

3.2 Current-Voltage Characteristics

3.2 Current-Voltage Characteristics (contd)