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General Aptitude
Q. No. 1 5 Carry One Mark Each
1.
(A) LMN
Answer: (C)
Exp:
A,
(B) MNO
C D,
B
1
2.
(C) MNOP
M N O P,
G H I,
JKL
3
E, F
2
(D) NOPQ
UVWXY
QRST
4
Answer:
3.
(B) alternate
(C) atheist
(D) altruist
(B)
Choose the most appropriate word from the options given below to complete the
following sentence?
If the athlete had wanted to come first in the race, he ___________several hours every
day.
(A) Should practice
(B) Should have practised
(C) Practised
Answer:
(B)
Exp:
For condition regarding something which already happened, should have practiced is the
correct choice.
4.
Choose the most suitable one word substitute for the following expression
Connotation of a road or way
(A) Pertinacious
(B) Viaticum
(C) Clandestine
(D) Ravenous
Answer: (A)
Exp: No word is relevant. Least irrelevant word is pertinacious.
5.
i ln x ln y
iv cos x cos y
A i and ii
ii ex ey
iii
yx x y
B i and iii
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D ii and iv
C iii and iv
Answer: (A)
Exp: For whole numbers, greater the value greater will be its log.
Same logic for power of e.
Q. No. 6 10 Carry Two Marks Each
6.
From a circular sheet of paper of radius 30cm, a sector of 10% area is removed. If the
remaining part is used to make a conical surface, then the ratio of the radius and height of
the cone is ________.
Answer:
Exp:
13.08
7.
In the following question, the first and the last sentence of the passage are in order and
numbered 1 and 6. The rest of the passage is split into 4 parts and numbered as 2,3,4, and
5. These 4 parts are not arranged in proper order. Read the sentences and arrange them in
a logical sequence to make a passage and choose the correct sequence from the given
options.
1. One Diwali, the family rises early in the morning.
2. The whole family, including the young and the old enjoy doing this,
3. Children let off fireworks later in the night with their friends.
4. At sunset, the lamps are lit and the family performs various rituals
5. Father, mother, and children visit relatives and exchange gifts and sweets.
6. Houses look so pretty with lighted lamps all around.
(A) 2, 5, 3, 4
Answer:
8.
(B) 5, 2, 4, 3
(C) 3, 5, 4,2
(D) 4, 5, 2, 3
(B)
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9.
A 1
Answer:
Exp:
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B 1
(C)
0
Using the same logic total sum is 0.
10.
Ram and Shyam shared a secret and promised to each other that it would remain between
them. Ram expressed himself in one of the following ways as given in the choices below.
Identify the correct way as per standard English.
(A) It would remain between you and me.
(B) It would remain between I and you
(C) It would remain between you and I
(D) It would remain with me.
Answer:
(A)
A coaxial cable is made of two brass conductors. The spacing between the conductors is
filled with Teflon (r = 2.1, tan = 0). Which one of the following circuits can represent
the lumped element model of a small piece of this cable having length z?
Rz / 2 Lz / 2 Rz / 2 Lz / 2
Rz / 2 Lz / 2 Rz / 2 Lz / 2
Gz
Cz
Cz
z
Lz / 2
Rz
Lz / 2
Lz
C
Gz
Cz
Gz
Cz
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Answer:
Exp:
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(B)
2.
Answer:
3.
10
is _____ .
s s 10
84.32
In the circuit shown, diodes D1, D2 and D3 are ideal, and the inputs E1, E2 and E3 are 0 V
for logic 0 and 10 V for logic 1. What logic gate does the circuit represent?
D1
E1
D2
E2
D3
E3
Vo
1k
10V
Case (i) : If any input is logic 0 (i.e., 0V) then corresponding diode is ON and due to
ideal diode output voltage Vo 0 as well as if there is any input logic 1 (i.e., 10V)
corresponding diode will be OFF.
Case (ii) : If all the inputs are high (i.e., 10V) then all the diodes are R.B (OFF) and
output voltage Vo 10V.
So, it is a positive logic 3-inputs AND gate.
4.
In the circuit shown in the figure, the BJT has a current gain () of 50. For an emitter base
voltage VEB = 600 mV, the emitter collector voltage VEC (in Volts) is ______.
3V
60k
500
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Answer: 2.04
Exp: VEB 0.7 V
IB 0.0383mA
IC 1.916mA
5.
The contour on the x-y plane, where the partial derivative of x2 + y2 with respect to y is
equal to the partial derivative of 6y + 4x with respect to x, is
(A) y = 2
(B) x = 2
(D) x y = 0
(C) x + y = 4
Answer:
Exp:
(A)
6.
tan x
1
For A
the determinant of AT A 1 is
1
tan x
A sec2 x
Answer:
Exp:
B cos 4x
C 1
D 0
(A)
Tan x
1
A
1
Tan x
Tan x
1
AT
1
Tan x
A 1 Tan 2 x Sec 2 x
A 1
Tan x
1 1
2
1
sec x Tan x
Tan x 1 1
Tan x
1
A T A 1
2
1 sec x Tan x
1
Tan x
Tan x Tan x
1 1 Tan 2 x
2
sec x Tax Tan x Tan 2 x 1
1 1 Tan 2 x 2Tan 2 x
sec 2 x 2Tan x
1 Tan 2 x
AT A 1
2
1
1 Tan 2 x 4Tan 2 x
sec x
1
1 Tan 4 x 2Tan 2 x 4Tan 2 x
sec2
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1
1 Tan 4 x 2Tan 2 x
sec2 x
2
1
1 Tan 2 x
2
sec x
2
1
sec2 x sec 2 x
2
sec x
7.
0.5Vx
10
Vx
5A
Answer:
20
0.25Vx
Exp:
0.5Vx
10
5A
Vx
20
0.25Vx
0.5Vx 5
20
10
1 0.75
Vx
0.5 5
20 10
5
Vx 5 Vx 8V
8
8.
Which one of the following 8085 microprocessor programs correctly calculates the
product of two 8-bit numbers stored in registers B and C?(Options)
(A) MVI A, 00 H
(B) MVI, A, 00H
JNZ LOOP
CMP C
CMP C
LOOP DCR B
LOOP DCR B
JNZ LOOP
HLT
(C) MVI A, 00H
LOOP ADD C
HLT
(D)
MVI A, 00H
ADD C
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DCR B
JNZ LOOP
JNZ LOOP
LOOP INR B
HLT
Answer:
Exp:
HLT
(C)
Loop :
DCRB
JNZ LOOP
HLT
So, repetitive addition of a number as many times will give the product of these two
numbers.
9.
Consider the function g(t) = et sin(2t) u(t) where u(t) is the unit step function. The area
under g(t) is _______.
Answer:
Exp:
0.155
g(t) e t sin(2t).u(t)
2
s (2) 2
2
g(t) e t y(t)
G(s) Y(s 1)
G(s)
2
(s 1) (2) 2
2
G(s) g(t).e st dt
G(0) g(t).dt
10.
2
6.28
0.155
2
1 (2)
40.438
In the circuit shown using an ideal opamp, the 3-dB cut-off frequency (in Hz) is _______.
10k
10k
Vi
Vo
0.1F
10k
Answer:
10k
159.15
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Exp:
f3dB
11.
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1
2RC
1
159.15Hz
210 103 0.1106
The modulation scheme commonly used for transmission from GSM mobile terminals is
(A) 4-QAM
(B) 16-PSK
(C) Walsh-Hadamard orthogonal codes
(D) Gaussian Minimum Shift Keying (GMSK)
Answer:
12.
Which one of the following processes is preferred to from the gate dielectric (SiO 2) of
MOSFETs?
(A) Sputtering
Answer:
13.
(D)
(D)
Consider the Bode plot shown in figure. Assume that all the poles and zeros are real
valued.
40 dB dec
40dB
40 dB dec
0dB
fL
300
900
fH
Freq. Hz
8970
40
40 0
log10 300 log10 f L
300
log10
1
fL
300 10f L
f L 30Hz .......... (i)
40
0 40
log10 f H log 900
f
log10 H 1
900
f H 900 10 9000
.......... (ii)
f H f L 9000 30 8970 Hz
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14.
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In the circuit shown, assume that diodes D1 and D2 are ideal. In the steady-state condition
the average voltage Vab (in Volts) across the 0.5 F capacitor is _____.
1F
50sin t
D1
D2
b
Answer:
15.
0.5 F
Vab
100
K s a
where, K, a
sb
and b are positive real numbers. The condition for this controller to act as a phase lead
compensator is
(A) a < b
(B) a > b
(C) K < ab
(D) K > ab
Answer: (A)
Exp: For phase lead compensator
s b
s a
ab
16.
m(t) Am sin 2f m t
Since y(t) is phase modulated signal,
(t) 2f c t m(t)
Bandwidth 2 f f m
f
1 d
m(t)
2 dt
The directivity of an antenna array can be increased by adding more antenna elements, as
a larger number of elements
(A) improves the radiation efficiency
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(B)
4
Ae
2
D Ae
18.
For the circuit shown in the figure, the Thevenin equivalent voltage (in Volts) across
terminals
a-b is ______.
1A
12V
b
Answer:
Exp:
10
3
12V
1A
V n
Answer:
Exp:
(B)
h(t)
y(t)
y(t) h()d
10
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20.
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Consider a four point moving average filter defined by the equation y[n] =
5
i 0
i n i
The condition on the filter coefficients that results in a null at zero frequency is
(A) 1 = 2 = 0; 0 = 3
(B) 1 = 2 = 1; 0 = 3
(C) 0 = 3 = 0; 1 = 2
(D) 1 = 2 = 0; 0 = 3
Answer:
(A)
3
Exp:
Getting a null at zero frequency implies that given filter can be high pass filter but it
cannot be low pass filter.
High pass filter is possible if we have negative coefficients.
Let say, 1 2 0, 0 3
y[n] 3 x[n] 3 x[n 3]
H(z) 3 1 z 3
H(e j ) 3 1 e j3
3e
j3
2
3
j
j 32
2
e
2j
2j
3 j 2
3 2 jsin
.e
2
3 2.sin
H(e j )
3 j 32 j 2
.e
.e
2
If C is a circle of radius r with centre z0, in the complex z-plane and if n is a non-zero
dz
integer, then
z z n 1 equals
0
2nj
nj
2
2n
Answer: (B)
Exp: By Cauchys Integral formula,
2i.f n (z 0 )
f (z)
dz
c (z z0 )n 1
n!
dz
z z
c
n 1
2i
0 0
n!
f (z) 1
f (z) 0 at any z 0
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22.
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At very high frequencies, the peak output voltage V0 (in Volts) is ______.
100 F
1k
1k
100F
1.0sin t V
1k
Vo
1k
100
Answer:
Exp:
0.5
1
jC
Very high frequency means ZC 0
So, all capacitors are replaced by short circuit.
For capacitor ZC
1k
1k
V0
1k
By voltage division, V0
1k
Vi
2
1.sin t
0.5sin t
2
Thus, Peak voltage = 0.5
V0
23.
If the base width in a bipolar junction transistor is doubled, which one of the following
statements will be TRUE?
(A) Current gain will increase
(B) Unity gain frequency will increase
(C) Emitter base junction capacitance will increase
(D) Early voltage will increase
Answer: (D)
Exp: WB doubled (increased) early effect is still present but its effect less severe relative to
previous WB. Slope IC Vs VCE decreases
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n
24.
1
The value of n is ____.
n 0 2
Answer:
Exp:
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Given that
1
n
n 0 2
1
1
1
1
0 1. 2 3 4 ......
2
2
2
2
2
3
1
1 1
1
1 2 3 4 .........
2
2 2
2
1 1
1
2 2
2
1 x
1 2x 3x 2 4x 3 ....
11
1
2
2 2
2
25.
The circuit shown consists of J-K flip-flops, each with an active low asynchronous reset
( R d input). The counter corresponding to this circuit is
1 J
Q
Clock
1 K Rd
1 K Rd
1 K Rd
(A)
Analysis:
1. Clock is taken from normal output and it is ve edge triggering. So, it is UP-counter.
2.
3.
Q2 ,Q1 ,Q0 1 0 1
So, it is MOD 5 binary UP-counter.
A 200 m long transmission line having parameters shown in the figure is terminated into
a load RL. The line is connected to a 400 V source having source resistance RS through a
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switch which is closed at t = 0. The transient response of the circuit at the input of the line
(z = 0) is also drawn in the figure. The value of RL (in ) is _____
V 0, t
R s 150
100V
R 0 50
r,eff 2.25
RL
62.5V
VS 400V
200m
z0
Answer:
zL
2.0
t s
30
Exp:
S
R
100
0
R 100
100
R S 100
62.5
t s
z0
zl
R L 50
1
, S
R L 50
2
1
,
4
R L 30
So, R
27.
A coaxial capacitor of inner radius 1 mm and outer radius 5 mm has a capacitance per
unit length of 172 pF/m. If the ratio of outer radius to inner is doubled, the capacitance
per unit length (in pF/m) is _____.
Answer:
Exp: C
120.22
2 l
ln b a
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C
2
C1
l ln b a
C1 ln b 2 a 2
C 2 ln b1 a1
172 pF ln 10 1
C2
ln 5
C2
ln 5
ln 10
172pF
C 2 120.22 pF
28.
A universal logic gate can implement any Boolean function by connecting sufficient
number of them appropriately. Three gates are shown.
F1 X Y
X
Y
F2 X.Y X
Y
X
Y
F3 X Y
(D)
Only NAND and NOR are universal gate, but in the question other gates are mentioned.
Exp:
f (x) x 3 5x 2 6x 8
x0 5
f (x) 3x 2 10x 6
By Newton-Raphson method.
x1 x 0
f (x 0 )
f (5)
5
f (x 0 )
f (5)
22
31
5 0.7097
5
4.2903
30.
X p t nT .
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where p(t) = u(t) u(t T), u(t) is the unit step function and is an independent random
variable with uniform distribution in [0, T]. The sequence X n consists of independent
and identically distributed binary valued random variables with P{Xn = +1} = P{Xn = 1}
= 0.5 for each n.
3T
3T
The value of the auto correlation R yy E y t y t equals _______.
4
4
Answer:
Exp:
0.25
y(t)
X P t nT
R yy(z) 1
T
Derivation of above autocorrelation function can be found in any book dealing with
random process.
[B.P. Lathi, Simon, Haykin, Schaum series].
3T 3 / 4
R yy 1
4
31.
1
0.25
4
A three bit pseudo random number generator is shown. Initially the value of output Y =
Y2 Y1 Y0 is set to 111. The value of output Y after three clock cycles is
Y2
CLK
D2 Q2
D1 Q t
D0 Q0
(A) 000
(C) 010
Answer:
YD
Y1
(B) 001
(D) 100
(D)
Exp:
D 2 Q1 Q0 D1 Q 2 D0 Q1 Y2 Q 2 Q1 Y1 Q0 Y0
1
1
1
st
1 clock
0
1
1
0
1
1
nd
2 clock
0
0
1
0
0
1
rd
1
0
0
1
0
0
3 clock
32.
In the circuit shown, assume that the opamp is ideal. If the gain (Vo/Vin) is 12, the value
of R (in k) is _____
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10k
Vin
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10k
R
10k
V0
Answer:
Exp:
10k
10k
Vx
R
10k
Vin
V0
Vin 0 0 Vx
_____ (2)
10k
R
10k
Put the value of Vx from equation (1) in equation (2) we get
R = 1k
Two sequences x1[n] and x2[n] have the same energy. Suppose x1[n] = 0.5n u[n], where
a is a positive real number and u[n] is the unit step sequence. Assume
1.5 for n 0,1
x 2 n
0 otherwise
Then the value of a is _____.
Answer: 2.25
33.
Exp:
x 2 [n]
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.(0.5)2n
n 0
1 1
1 ...
4 16
1
4
1
3
1
4
Energy of x 2 [n]
1.5
1.5
34.
9
2.25
4
5 j4
5 j4
2 j0
A
C
20.5
3.5 j2
20.5 3.5 j2
2 j0
10
2 j0 10
B
D
0.5
3.5 j2
0.5
3.5 j2
7 j4 0.5
30.5 7 j4
Answer: (B)
Exp: For the standard T network, obtain the Z-matrix first and then convert it into
T-matrix
2
7 j4
Z
7 j4
2
Z 7 j4 7 j4 4
49 16 4 61
A
Z11 7 j4
3.5 j2
Z21
2
Z 61
30.5
Z21 2
1
1
C
0.5
Z21 2
B
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Z22 7 j4
3.5 j2
Z21
2
30.5
3.5 j2
T
3.5 j2
0.5
35.
y 3x1 2x 2
Y s
The transfer function H(s)
is
U s
11s 35
A
s 2 s 4
C
Answer:
Exp:
11s 38
s 2 s 4
11s 35
s 2 s 4
11s 38
s 2 s 4
(A)
2 1
3
A
B
0 4
1
C 3 2
H s C sI A B
1
1 3
s 2
3 2
s 4 1
0
s 4 1
1
3 2
s 2 s 4 0 s 2
1
3
1
3s 12 1
1
s 2s 8 s 2
95 39 25 4
s 2 s 4
3 2
36.
11s 35
s 2 s 4
In the circuit shown, the current I flowing through the 50 resistor will be zero if the
value of capacitor C (in F) is_____.
1mH
50
1mH
I
5 sin 5000t
~
Answer:
1mH
20
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Exp:
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50
j5
I
5 90o
5000
j
5000C
j5
If I 0, Vp Vi ,
1
0
Vi
1
j5
j 5
5000C
1
1
0
1
j5
j 5
5000C
1
1
5
5000C
1
5
5000C
1
10
5000C
37.
1
20 F
5 104
A realization of a stable discrete time system is shown in figure. If the system is excited
by a unit step sequence input x[n], the response y[n] is
x n
z 1
5 3
yn
z 1
2 9
1
2
4 u n 5 u n
3
3
53
n
2
1
B 5 u n 3 u n
3
3
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n
1
2
C 5 u n 5 u n
3
3
Answer:
Exp:
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n
2
1
D 5 u n 5 u n
3
3
(C)
v[n]
x[n]
5
3
z 1
y[n]
1
z 1
2 / 9
5/3
V(z) 1 z 1 z 2 X(z)
9
V(z)
1
(1)
X(z) 1 z 1 2 z 2
9
Y(z) 5 1 5 2
z z
V(z) 3
3
(2)
3
X(z) 1 z 1 2 z 2
9
1
1 z 1
5
z 1
3
Y(z)
2
1 z 1 z 2
9
A
B
1
2
1 z 1 1 z 1
3
3
On solving,
A=5 ; B=-5
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n
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1
2
y[n] 5 u[n] 5 u[n]
3
3
38.
Answer:
Exp:
1
Hz, is
2
sin t 5 j 4
e
t 5
sin t 5 j 4
2
e
t 5
sin t 5
2
sin t ,
t 5
4
sin t 5 j 4
e
t 5
sin t 5 j 4
2
e
t 5
(C)
sin t / 5
x(t) 2
sin t
4
t / 5
sin(t / 5
x(t) 2
cos sin t sin cos t
t
/
5
4
4
sin(t / 5)
sin(t / 5)
cos t
sin(t)
t / 5
(t / 5)
Also
sin(t / 5)
sin(t / 5)
, x s (t)
(t / 5)
(t / 5)
39.
2 sin t / 5 j /4
sin(t / 5)
e
1 j
t / 5
(t / 5)
In the circuit shown, assume that the diodes D1 and D2 are ideal. The average value of
voltage Vab (in Volts), across terminals a and b is ______.
D1
6 sin t ~
10k
10k
Vab
D2
20k
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Answer:
40.
Answer:
Exp:
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0.8556
Given
d 2 x(t) 3dx(t)
2x(t) 0
dt 2
dt
x(0) 20
10
e
x(2)
x(1)
Auxillary equation is
m 2 3m 2 0
m 1, 2
x(0) 20 20 c1 c 2 (a)
x(1)
10 10
c1e1 c2 e2
e
e
10 c1 c2e1 (b)
From (a) c1 20 c2
Now 10 20 c2 c2e1
10 c2 e1 1 20
c2
10 20
10
10
10e
1
1
1
e 1
e 1 1 e
e 1
c1 20
e 1
e 1
e 1
10e 20 t 10e 2t
e
e
e 1
e 1
10e 20 2 10e 4
x(2)
e
e 0.8556
e 1
e 1
x(t)
41.
n
Let x n 1 cos be periodic signal with period 16. Its DFS coefficient are defined
8
15
1
by k x n exp j kn for all k. The value of the coefficient 31 is ________.
16 x 0
8
Answer:
0.5
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Exp:
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x[n] 1 cos n
8
N=16
1 j 216n 1 j 216n
x[n] 1 e
e
2
2
1
1
a 1 , a1 , a 0 1
2
2
a1 a 116 a 1 a15
1
2
1
1
, a 2 to a14 0, a15
L
2
DFS coefficients are also periodic with period 16.
a 0 1, a1
a 31 a16 15
a 31 a15
a 31
42.
A fair die with faces {1, 2, 3, 4, 5, 6} is thrown repeatedly till 3 is observed for the first
time. Let X denote the number of times the die is thrown. The expected value of X is
_________.
Answer:
Exp:
1
2
1.7854
Probability of getting 3
1
6
1 5
6 6
If dice thrown repeatedly till first 3 observed first time then
Probability of not getting 3 1
E(x)
1
5 5 1 5 5 5 5 1
2 3 ....
6
6 6 6 6 6 6 6 6
2
4
1
5
5
1 2 3 ...
6
6
6
2
2
5 2
1
5
1 2 3 ...
6
6
2
1 5
1
6 6
1 11
1 (36) 2
1.7851
6 36
6 (11) 2
43.
The electric field profile in the depletion region of a p-n junction in equilibrium is shown
in the figure. Which one of the following statements is NOT TRUE?
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cm
104
0.1 0
0.5
1.0 X m
(A) The left side of the junction is n-type and the right side is p-type
(B) Both the n-type and p-type depletion regions are uniformly doped
(C) The potential difference across the depletion region is 700 mV
(D) If the p-type region has a doping concentration of 1015 cm3 , then the doping
concentration in the n-type region will be 1016 cm3
Answer: (C)
Exp: Built in potential
1
O 106 V 1.1 106 m
m
2
0.55 volts
But in Question option C is given as 700 mV.
44.
D.ds is _____.
integral of this field on S
Answer:
Exp:
78.53
D = 22a+zaz
D.ds .D dv
1
1 D D
.D
D
z
S
1
22 0 1
1
2 3 2 1
6 1
V .D dv 0 0 z0 6 1 dddz
1
63 2
2
3
2 5
0
2 10
2
.D dv 78.53
v
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45.
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An npn BJT having reverse saturation current Is = 1015 A is biased in the forward active
region with VBE = 700 mV. The thermal voltage (VT) is 25 mV and the current gain ()
may vary from 50 to 150 due to manufacturing variations. The maximum emitter current
(in A) is _____.
Answer:
Exp:
1475
I
I VBE
IB C S e VT
I E 1 I B
VBE
1
IS .e VT
1.02 10 10
9
700103
25103
1475 A
46.
Consider the 3 m long lossless air-filled transmission line shown in the figure. It has a
characteristic impedance of 120 , is terminated by a short circuit, and is excited with a
frequency of 37.5 MHz. What is the nature of the input impedance (Zin)?
ZL 0
3m
Zin
(A) Open
Answer: (D)
Exp:
(B) Short
(C) Inductive
(D) Capacitive
37.5 106
2
=
8
3
8
3
Inductor
2
l Capacitor
2
47.
The current in an enhancement mode NMOS transistor biased in saturation mode was
measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was
increased to 6 V while keeping gate-source voltage same, the drain current increased to
1.02 mA. Assume that drain to source saturation voltages is much smaller than the
applied drain-source voltage. The channel length modulation parameter (in V1) is
____________.
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Answer: 0.022
Exp: NMOS SATURATION
I D 1mA @ VDS 5V
I D 1.02mA @ VDS 6V
VDSat VDS
I D k VGS VT 1 VDS
2
I D k ' 1 VDS
103 k ' 1 5
1.02 103 k ' 1 6
1 6
1.02 5.1 1 6
1 5
0.02 0.9
1.02
0.022V1
48.
For the system shown in figure, s = 2.75 lies on the root locus if K is_____.
s3
s2
Y s
10
Answer:
Exp:
0.3
G s H s
10k s 3
s 2
k' s 3
s 2
For k
Poles length 0.75
k'
3
zero length 0.25
10 k 3
k 0.3
49.
2
s 2.75
An SR latch is implemented using TTL gates as shown in the figure. The set and reset
pulse inputs are provided using the push-button switches. It is observed that the circuit
fails to work as desired. The SR latch can be made functional by changing
Set
5V
Q
Reset
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(D)
1
x
xe
2
is _____
Answer: 6
Exp:
1
x
x e is probability density function of random variable X.
2
V(x) E x 2 E(x)
E(x) xf (x) dx
1
x
x e xdx
2
E(x)2 x 2 f (x)dx
x2
1
x
x e dx
2
2 3 x
x e dx function is even
3 2
3! 6
51.
x(t)
sin t / 2
(t / 2)
t 10n
1
0.1
Ts
Sin t / 2
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t / 2
1
4
1
4
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0.2 0.1
0.1 0.2
Thus Nyquist rate= 0.4 samples/sec
52.
In the circuit shown, the both the enhancement mode NMOS transistors have the
following characteristics: kn = n Cox (W/L) = 1 mA/V2; VTN = 1V. Assume that the
channel length modulation parameter is zero and body is shorted to source. The
minimum supply voltage VDD (in volts) needed to ensure that transistor M1 operates in
saturation mode of operation is _____.
VDD
Answer:
3
Exp:
M2
VDS1 = 2-1 = 1V
VDS1 = VD1-VS1
1V = VD1 - 0
2V
M1
VD1 = 1V
and I D1 K ' VGS1 V
1mA
2
2 1 1mA
V2
Now transistor M2 , VDG = 0V
I D1
So, it will work into saturation region and same current will flow
ID2 ID1 K ' VGS2 V
VDD 3V
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53.
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The position control of a DC servo-motor is given in the figure. The values of the
parameters are KT = 1 N-m A, Ra = 1 , La = 0.1H. J = 5 kg-m2, B = 1 N-m (rad/sec) and
Kb = 1 V/(rad/sec). The steady-state position response (in radians) due to unit impulse
disturbance torque Td is _________.
Ta s
Vd s
KT
R a La s
1
JS B
1
S
Kb
Answer:
Exp:
-0.5
Td s 1
1
KbKT
s Js B
R a La s
54.
The characteristic equation of an LTI system is given by F(s) = s5 + 2s4 + 3s3 + 6s2 4s
8 = 0. The number of roots that lie strictly in the left half s-plane is _____.
Answer:
Exp:
S5
S3
12
S1
9.33
as 0
2s 4 6s 2 8 0
Let x s 2 , then
2x 2 6x 8 x 1, 4
s2 1, 4 s 1, 2j
Number of roots lies on RHS s 1
There are only two poles left on LHS.
55.
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Answer:
Exp:
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(C)
Since x[n] in absolutely summable thus its ROC must include unit circle.
2 j
unit circle
x 2 j
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