Aachen, Germany.

2W4

2004 35th Annual IEEE Power Electronics Specialists Conference

A Novel Modeling Method for Photovoltaic Cells

Weidong Xiao
University of British Columbia
Vancouver, BC Canada
weidongx@ece.ubc.ca

William G. Dunford
University o f British Columbia
Vancouver, BC Canada
wgd@ece.ubc.ca

Absfracr-The mathematical description of current-voltage

characteristics for photovoltaic cells are generally represented
by a coupled nonlinear equation, which is diliicult to solve by
analytical methods. In this paper, a novel modeling process is
proposed to configure a computer simulation model, which is
able to demonstrate the cells output features in terms of
environment changes in irradiance and temperature. Based on
a simplified single-diode model, the parameters are determined
in the sense of minimum model error and temperature effect.
It is tested to simulate three popular types of photovoltaic
panels made of different materials, CIS thin film, muticrystalline silicon, and mono-crystalline silicon. The
effectiveness of this approach is evaluated through comparison
of simulation results to the data provided by products
manufacturer.

r r

NOMENCLATURE
A

Ideality factor

Charge on an electron

AM

Airmass

G.
C,

Standard insolation

I+,
k
T

Photo current
Boltnnan wnstant
Cell temperature
(degrees Kelvin)
Thermal voltage (volt)
Standard temperature

insolation (W/m)

(iOOOW/m)

I,
STC

Saturation current
Standard test condition

V,

T,

(b)
Fig. I The cell equivalent circuits: (a) the single-diode model; (b) the

double-diodemodel

(29810

I.
INTRODUCTION
The performance of solar cell is normally evaluated under
the standard test condition (STC), where an average solar
spectrum at AM I .5 is used, the irradiance is normalized to
1000W/m2, and the cell temperature is defined as 25%. To
satisfy the requirement of temperature and insolation in
STC, the test usually needs specified environment and some
special testing equipment, such as an expensive solar
simulator. Simple experiments may not be sufficient to
reproduce the electrical characteristics of solar cell
accurately. In this study, the modeling method is based on
the specification data provided in the manufacturers
datasheets.
The traditional equivalent circuits of a solar cell
represented by a current source in parallel with one or two
diodes are shown in Fig.1. The single-diode model [ I ]
includes four components: a photo current source, a diode
parallel to the source, a series resistor R, and a shunt resistor
Rp. In double-diode model [2] shown in Fig.l(b), an
additional diode is added for better curve fitting.
In most cases, it is difficult to determine the 5 parameters
in single-diode model and 6 parameters in double-diode

0-7803-8399-0/04/$20.00 02004 IEEE.

Antoine Capel
llniversity Rovira i Virgili
Tarragona,Spain
antoine.capel I @wanadoo.ti

model mathematically, due to the exponential equation of a

p-n diode junction. I n [I], the solar model was developed
through the coupled multi-physical processes of
photovoltaic energy conversion. In 121, the LevenbergMarquardt method was chosen to solve the doubleexponential model equation. To avoid the modeling
sophistication, a datzi-based approach is presented in this
paper.
Some researchers [3],[4] on photovoltaic models use
constant parameters (i.e. ideality factor A, series resistance
R, and shunt resistance R,,), which result in modeling
inaccuracy. In realiiy, these parameters vary with the
temperature change. To prevent this problem, this proposed
modeling method considers temperature effect on the
important parameters of solar cells.
The modeling process is divided into three steps. First,
the simulation modet. is presented and the parameters are
determined. Second, a computer simulation model is created
to illustrate the electrical features of a solar cell. Finally, the
accuracy of modeling method is evaluated through
comparison of simulation results to the practical data.
11.

MODELING

This model r e q u k s four parameters derived from data

that can be obtained (iom commercial photovoltaic modules
under three condition:j short circuit current (Isc), open circuit

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2004 35th Annual IEEE Power Electronics Specialists Conference

Aachen, Germany, 21394

voltage (Vac), and the current (Impp)

and voltage ( VmPp)at
maximum power points. Temperature coefficients are also
necessary in this modeling method to consider the
temperature effect on the important parameters of solar
cells.

R.

+
V

A. Important data used in the photovol!aic modeling

The data of photovoltaic panel essential for this modeling
approach is listed in Table 1.

B. Simplified one-diode model

Based on the single-diode model, the equivalent circuit
(Fig.2) used in this study is further simplified by neglecting
the shunt resistor. As a function of voltage, the current of a
photovoltaic cell is given by

where Iph represents the photo current, I! is the thermal

voltage, and Isat is the diode saturation current.

Fig. 2 The equivalent circuit of a simplified singlediode model

!_(T)= V,, + A V _ ( T - T )
(4)
where V,, is the open circuit voltage in STC, and AV, is
the temperature coefficient on open circuit voltage.
According to the short circuit situation in equivalent circuit
shown in Fig.3 (b), the value of photo current is equal to the
current going through the diode:
(5)
I, ( G J ) = 1, ( G J )
Based on Shockley equation, the diode current can be
found as

C. Short Circuit Condition

According to the short circuit situation in equivalent

circuit shown in Fig.3 (a), the current relationship can be
expressed as
I , = I flu:
(2)
The value of diode voltage ID, caused by the short circuit
current I, through &, is very small at short circuit
condition, so the diode current I D is negligible. It is well
known that the photo current Iph is directly proportional to
solar irradiance. Considering the effects of irradiance and
temperature on photo current, the photo current can be
appoximated as

where

~ ( T ) = Ais~ Tthe

thermal voltage, A is the

4
is diode saturation current that is a
ideality factor, and lso,
function of irradiance and temperature. From ( 5 ) and (6),
the saturation current I,, can be evaluated as

E.

A i the peakpower point

The peak power point (Vmpp imp,,) under different testing

environment can be known according to the photovoltaic
panels specification. At the peak power point,

where G, and T represent irradiance and temperature

respectively. Other parameten in (3) are constants: I,, is
short circuit current on standard test condition (STC), G, is
standard irradiance (/OOOW/rn), AI,, is the temperature
coefficient on short circuit current, and T, is the standard
temperature (298K).

Substitute (7) into (S), we get

D. Open Circui! Condition

The open-circuit voltage can be computed as
TABLE I
IMPORTANT DATA USED IN THE PHOTOVOLTAIC
MODELING
Geneer01 Specijcations at
I Temperature coe$icients*
standDrd tesr condition (SK)
I
Peak power: Pme
Temperature effect on peak
power: A Pmpn
Short circuit current: I,
Peak power voltage: VTemperature effect on peak
Open circuit Voltage: V,,
power voltage: A V,,
Number of cells in series: N.
Ternperam effect on open
Number of Cells in parallel: No
circuit voltage:d V,
Temperalure effect on short
Temperature coefficients may be represented
circuit current:
by other
A I- different

>
I

v,=v,
+

Fig. 3 (a) The equivalent circuit in short circuit condition; (b) the
equivalent circuit in open circuit condition

ways.

1951

Aachen, Germany, 2604

2004 35th Annual IEEE Power Electronics Specialists Conference

dP
dV
From (I), we get
-=

dl I
0 c;)-+-=
dV V

dl
dV

By re-organizing (9), we obtain the following relationship

between R, and V,

Therefore,

'w

where V, is the thermal voltage, a function o f ideality

factor A .
F. Determining the diode idealiiy factor and series
resistance
The typical power-voltage curve of solar cell is illustrated
in Fig.4. It is clear that the peak powers are the points,
wheredP = 0. Because of P = V I , we know
dV

With (12), the value of dl/dV at the peak power point can
be calculated. By comparing the dl/dV with ~,,p,,~V,,pps,
the
values of A and R, in the model that best represent the
output characteristics of the solar cell can be derived by
computer software. Fig.5 shows the software flow chart to
determine the final vnlues of A and R,. The estimation of A
and R, is done when the absolute value of

f,,;nw

+?]

is minimized.

G. Temperature e@
The parameters o f A and R, determined in Fig.5 only
represent the characteristics of a solar cell at a certain
temperature level. Repeated calculations are necessary to
generate a group of data of A and R,, which illustrate the

voltage (wlt)
(a)

io

15
Voltage (wlt)

IiI
20

(b)
Fig. 4 The lypical power-voltage characteristicswith influence of
insolation and temperature; (a) power-voltage characteristicsof a
photovoltaic module for different insolation levels at uinstanl
temperature (25C): (b) power-voltage characteristicsof a photovoltaic
module for different temperature levels at constant solar insolation

(1OOOw/m')

Fig. 5 The software flow chart in determining the final values ofA and

1952

2004 351h Annual IEEE Power Elecrronics Specialisrs Conference

Aachen, G e m m y , 2004

temperature effects. Fig.6 shows the specific characteristics

of ideality factor A and series resistance R, in term of
temperature. In this solar module (Shell ST40), the ideality
factor decreases and the resistance increases, while
temperature increases. This model is named as adaptive
parameter model (APM).

1.7-

;;

1.8~

-BE 1 . 5
72 1 . 4 ~

SIMULATION
MODEL

111.

Based on the equations ( I , 3, 4, 7) and the determined

parameters, it is easy to formulate a simulation model with
most computer simulation tools. The model shown in Fig.7
is designed with the Sirnulink" software package. The
photovoltaic output current is represented as a function of
voltage (input I), and voltage-current characteristics
configured inside the box is influenced by insolation (input
2) and temperature (input 3). Look-up tables are used to
represent the relationship between temperature and
parameters (A or R,).

1'2L

1.10

-E
9

EVALUATION
There are several types of photovoltaic modules made of
various materials. Three types are used to evaluate the
effectiveness of the proposed modeling method. Because the
open circuit point (Vac, 0) and short circuit point (0, Isc) are
derived directly from the data given by photovoltaic
datasheet, we only need to evaluate the matching accuracy
at the different maximum power points.
IV.

A. CIS thinfilm
An alternative solar cell technology is thin film, which
reduces the material's cost. One of the active materials
based on this technology is copper-indium-diselenide(CIS).
Fig. 8 shows the simulated characteristics of a typical CIS

o'042
0.04

0.038-

E" 0.036

5e,

0.034~

'P

0.032~

(bl
Fig. 6 The temperalure characteristics of imponant parameters: (a) the
feahues of ideality factor (A) in tern oftemperature:(b) the feahms
of series resistance in terms of temperature

4IPh

Q
T(k)

T(K)

Voc

voc

kV.x

1.a.-

Vt

Q
V

K1.-

1953

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2004 35th Annual IEEE Power Electronics Specialists Conference

Aachen, Germany, 2004

thin film solar module (Shell ST40).

The comparison between the simulation and practical data
is illustrated in Table 11. The results show that the average
relative error on peak power voltage is 0.34% and the
average relative error on peak power is 0.02%. The
simulation error plot is shown in Fig.9 in a certain
temperature range from -25C to 49C. Based on error
analysis, the simulation accuracy can be compared between
the constant-parameter model (CPM) and the adaptiveparameter model (APM). The parameters of CPM are
determined with the data at STC. The results show the
relative simulation deviation for CPM is 1.57% and 0.04%
for APM. This demonstrates the proposed model is more
accurate in term of simulation results.

E.

TABLE II
SIMULATION ERRORS ON THE M A X I M U M POWER POINT A T
ENT TEMPERATURE (SHELL ST40)

Data~rovrdedby

Muti-crystalline Silicon

Fig. I O shows the simulated characteristics of a typical

muti-crystalline solar module (Shell S36). The comparison
between the simulation and practical data is illustrated in
Table 111. The results show that the average relative error on

',P

Temperature
50C
I insolation:

v,

IOOoW/m'

Temperature:
23T
Insolation:
I OOOW/m'
Temperature
0C
Insolation:
IOOOW/m'
Temperature
-25C
Iinsolation:
I OOOW/m'

I Irnulatron I Relarrva

P,

V=
,

0.00% on

1416V

V,,
0.00%on

= 14.1ov

:= 40W

16.60V

.,

p I=
40.00W
.V,
=
16.39V

,.P
0.06%on

0.00% on

0.12%on

peak power voltage is I .44% and the average relative error

on peak power is 0.15%. Again, the simulation error plot in
term of variable temperature level is shown in Fig. 1 I . The
results show the relative simulation deviation for CPM is
0.56% and 0.16% for APM.
Mono-cryslalline silicon photovoltaic module
Fig. 12 shows the simulated characteristics of a typical
mono-crystalline solar module (Shell SP70). The
comparison between the simulation and practical data is
illustrated in Table I V . The results show that the average
relative error on peak power voltage is 0.34% and the
average relative emir on peak power is 0.02%. The
simulation errors in term of variable temperature level are
shown in Fig.13. The results show the relative simulation
deviation for CPM is 1.19% and 0.03% for APM.

C.

vonage *a)
(a)

0.041

'0

10
15
20
Vobge (vdt)

25

(b)

Temperature ('C)

Fig. 8 The current-voltage characteristicsofClS thin film solar module

(Shell ST40) (a) the characteristics for different insolation levels at
constant temperatun (23'C) (b) the characteristics for different
temperature levels at constant solar insolation ( IOOOw/m')

Fig. 9 Relative simulation error in the comparison of APM to CPM in

term of temperature change (CIS thin film, Shell ST40)

1954

Aachen, Germany, 2094

2004 35rh A n n u l IEEE Power Elecrronics Specialisls Conference

TABLE 111

01
0

Insolation:
1OOOW/m
Temperature:
2ST
Insolation:
1000Wlm
Temperature:
0C
Insolation:

Y
5

10

20

15

VOhge (volt)

Temperature:

(4

Insolation:
10Oow/m

P,=
V,

36.00W
= I6.50V

Pw=4O.0SW
V,=
18.40V
P,=44.1OW

v*,
=
14.94V
Pw * =
36.06W
V,*=
16.76V
PW* =
40.09W
vm* =

2.31% on
V,

.P,

0.012%on

V *=
20.51v

0.15%on
Pw
1.55%on
V,
0.011% on
P,
1.18%on

1.05%on

ACKNOWLEDGEMENTS

The authors would like to acknowledge the very useful

discussions with Magnus Lind, at the department of
electrical and computer engineering, University of British
Columbia.

REFERENCES
[I]

20

25

[2]

Vormtage (volt)

(b)

[3]

Fig. 10 The cunent-voltage characteristics of muti-crystalline silicon

photovoltaic module (Shell S36) (a) the characteristics for different
insolation levels at constant temperature (25C) (b) the characteristics
far different temperature levels at constant solar insolation ( 1000wlm2)

141

[SI

V.
CONCLUSION
In this paper, a general approach on modeling
photovoltaic modules is presented. The points chosen for
the parameter determination are the short circuit current
open circuit voltage point (Vx, 0), and the
point (0, L),
The data needed for the
maximum power point (V,,, Impp).
model are from either the products data sheet or
experimental testing results. Three types of solar module
(CIS thin film, m-Si and c-Si) were modeled and evaluated.
The model accuracy is also analyzed through comparison
between products data and simulation results. Compared
with constant parameter model (CPM), the deviation of
simulation results from the actual data is very much
reduced. The evaluations prove the effectiveness of this
modeling method based on a simplified one-diode model.
This allows efficient use of SimulinkQ to model
photovoltaic power systems.

I955

S . Liu and R. A. Dougal, Dynamic multiphysics model for solar

array, IEEE Tram. Energv Conversion, Vo1.17, No.2, pp.285-294,
June 2002
1. A. Cow and C.D. Manning, Development of a photovoltaic array
model for me in power-electronics simulation studies, IEE Proc.
Elecrr. Power Appl., Vol. 146, Na.2, pp.193-200, March 1999
H. Yamarhita, K.Tamahashi, M. Michihim., A. Tsuyoshi, K. Amako,
and M. Park, A novel Simulation technique of the PV generation
system using red weather conditions, in 2002 Proc. Power
Conversion Con!, V01.2, pp. 839 4 4 4 , April 2002
G.A. Vokas, A.V. Machias, and J.L. Souflis, Computn modeling
and parameters estimation for solar cells, h 1991 Proe
Medirerranean Elecrrorechnicol Con/, v0l.l. pp. 206 -209, May
1991
Shell Solar Product Information Sheets

Aochen. Germany, 2W4

2004 35th Annual IEEE Power Electronics Specialists Conference

TABLE Iv
SIMULATION ERRORS ON THE MAXIMUM POWER POINT AT
DIFFERENT TEMPERATURE (SHELL SP70)
Condrtiom
[ Doto provided by Sirnulotion Relalive

v ,- 7

.......................
........................
4s
4 .............. i............... i...............t ..... .......!...

Temperature:

i y$= i ;??%;

Pw=62.13W
=,V
14.60V

62.13W

vm*

Insolation;
.............. i ..............

............. .........

, .V

0 1.5 ..............ij ..............

4oOWh
2
j .............
...............

rnmufizcturerr5]

0.04% on

v,* =
16.50V

0.00% on

= 16.50V

Insolation:

0.Wh on
.............. ..................

Insolation:

10
15
Voltage (volt)

20

0.05% on

18.31V

I v,,

85.8OW
V,'
=

,P

0.06% on
-25C
Insolation.
Iooow/m~

(4

v-*

25

votage Wt)

(b)
Fig. 12 The cunent-voltage characteristics ofmono-crystalline silicon
photovoltaic module (Shell SP70)(a) the characteristics for different
insolation levels at constant temperature (25'C) (b) the characteristics
for different temperature levels at constant solar insolation (IOOOw/m')

1956

V,=20,3OV

20IIV

0.94% on

v.,