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DOI: 10.1002/anie.201403611
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Figure 3. a,b) SEM, c,d) TEM and e) HRTEM images of the asobtained mesoporous BiVO4/Bi2S3 hollow discoids (sample H-3). The
inset in (a) shows a broken hollow discoid. f) STEM image of a single
representative BiVO4/Bi2S3 hollow discoid (sample H-3) and the
corresponding elemental mappings of g) Bi, h) O, i) S, and j) V
elements, and k) EDX analysis.
Figure 4. Photocurrent response of the as-prepared pure BiVO4 discoids and heterostructured BiVO4/Bi2S3 hollow discoids (sample H-3)
under visible-light illumination. The electrodes are annealed at 350 8C
in Ar for 1 h.
performed. Figure 4 shows the rapid and consistent photocurrent responses for each switch-on and -off event in
multiple 40 s onoff cycles under visible-light illumination.
It is worth to note that the photocurrent density of the BiVO4/
Bi2S3 heterostructure electrode (ca. 2340 mA cm 2) is about
one order of magnitude higher than that of the pure BiVO4
electrode (ca. 24 mA cm 2). The enhanced photocurrent
response of the as-prepared mesoporous BiVO4/Bi2S3
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hollow heterostructures indicates higher separation efficiency
of the photoinduced electronhole pairs and a lower recombination rate in such hybrid structures under visible-light
illumination.[41] This can be explained by the favorable
transfer of electrons from Bi2S3 to BiVO4 that reduces the
recombination of electronhole pairs as discussed shortly.
Therefore, the BiVO4/Bi2S3 heterostructures could be promising for photoelectrochemical energy conversion devices.
To demonstrate the photocatalytic activity of these unique
mesoporous BiVO4/Bi2S3 hollow heterostructures, photo-
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