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2SK970

Silicon N-Channel MOS FET

Application
TO220AB

High speed power switching

Features

Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive

2
1

1. Gate
2. Drain
(Flange)
3. Source

Table 1 Absolute Maximum Ratings (Ta = 25C)


Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

Gate to source voltage

VGSS

20

Drain current

ID

10

Drain peak current

ID(pulse)*

40

Body to drain diode reverse drain current

IDR

10

Channel dissipation

Pch**

30

Channel temperature

Tch

150

Storage temperature

Tstg

55 to +150

*
PW 10 s, duty cycle 1 %
** Value at TC = 25 C

2SK970

Table 2 Electrical Characteristics (Ta = 25C)


Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown


voltage

V(BR)DSS

60

ID = 10 mA, VGS = 0

Gate to source breakdown


voltage

V(BR)GSS

20

IG = 100 A, VDS = 0

Gate to source leak current

IGSS

10

VGS = 16 V, VDS = 0

Zero gate voltage drain current

IDSS

250

VDS = 50 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.0

ID = 1 mA, VDS = 10 V

Static drain to source on state


resistance

RDS(on)

0.12

0.15

ID = 5 A, VGS = 10 V *

0.17

ID = 5 A, VGS = 4 V *

0.22

Forward transfer admittance

|yfs|

3.5

6.0

ID = 5 A, VDS = 10 V *

Input capacitance

Ciss

400

pF

VDS = 10 V, VGS = 0,

Output capacitance

Coss

220

pF

f = 1 MHz

Reverse transfer capacitance

Crss

60

pF

Turn-on delay time

td(on)

ns

Rise time

tr

55

ns

ID = 5 A, VGS = 10 V,
RL = 6

Turn-off delay time

td(off)

140

ns

Fall time

tf

90

ns

Body to drain diode forward


voltage

VDF

1.2

IF = 10 A, VGS = 0

Body to drain diode reverse


recovery time

trr

125

ns

IF = 10 A, VGS = 0,
diF/dt = 50 A/s

* Pulse Test

2SK970

Maximum Safe Operation Area

Power vs. Temperature Derating

Drain Current ID (A)

Channel Dissipation Pch (W)

20

10
3
1.0
0.3

50
100
Case Temperature TC (C)

0.1
0.1

150

4V
5V

Pulse Test

VDS = 10 V
Pulse Test
8

3.5 V

3.0 V

2.5 V

2
75C

2
4
8
10
6
Drain to Source Voltage VDS (V)

25C
TC= 25C

VGS = 2.0 V
0

10
30
100
0.3
1.0
3
Drain to Source Voltage VDS (V)

10

Drain Current ID (A)

Drain Current ID (A)

10 V

Ta = 25C

Typical Transfer Characteristics

Typical Output Characteristics


10

DC

40

s
)
)
ot C
10
s
Sh 25
0
10 ms s (1 =
m (T C
1
10 n
= atio
r
PW pe
O

30

O
lim per
ite ati
d on
by in
R thi
s
DS
(o are
n) a
is

100

60

3
1.0
2
4
Gate to Source Voltage VGS (V)

2SK970

Drain to Source Saturation Voltage


vs. Gate to Source Voltage

10 A
1.2

0.8

5A

0.4

ID = 2 A

6
2
4
8
10
Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance


RDS (on) ()

1.6

Static Drain to Source on State Resistance


RDS (on) ()

Pulse Test

1.0
0.5

Pulse Test
ID = 10 A
5A
2A

0.3
VGS = 4 V
0.2

0.1
VGS = 10 V
0
40

10 A

2A
5A

120
0
80
40
Case Temperature TC (C)

VGS = 4 V

10 V

0.1
0.05

0.02
0.01
0.5

1.0

2
10
5
20
Drain Current ID (A)

50

Forward Transfer Admittance


vs. Drain Current

0.5

0.4

Pulse Test

0.2

Static Drain to Source on State


Resistance vs. Temperature
Forward Transfer Admittance yfs (S)

Drain to Source Saturation Voltage


VDS (on) (V)

2.0

Static Drain to Source on State


Resistance vs. Drain Current

160

50
20

VDS = 10 V
Pulse Test
TC = 25C
25C

10
5

75C

2
1.0
0.5
0.1

0.2

0.5 1.0
2
Drain Current ID (A)

10

2SK970

Body to Drain Diode Reverse


Recovery Time

Typical Capacitance vs.


Drain to Source Voltage
10000

di/dt = 50 A/s, Ta = 25C


VGS = 0
Pulse Test

200

VGS = 0
f =1MHz

3000
Capacitance C (pF)

Reverse Recovery Time trr (ns)

500

100
50

20

1000
Ciss
300
Coss
100
Crss

10

30

5
0.5

10
1.0
5
2
10
20
Reverse Drain Current IDR (A)

50

10
20
30
40
50
Drain to Source Voltage VDS (V)

Switching Characteristics

Dynamic Input Characteristics

40

12

VDS
VDD = 50 V

20
25 V
10 V
0

16

VDD = 50 V
25 V
10 V

VGS
ID = 10 A

8
12
16
Gate Charge Qg (nc)

0
20

Switching Time t (ns)

80

60

500

20
Gate to Source Voltage VGS (V)

Drain to Source Voltage VDS (V)

100

td (off)

200
100
50

tf
VGS = 10 V
PW = 2 s, duty < 1 %

20
tr
10
5
0.1

td (on)
0.2

0.5 1.0
2
Drain Current ID (A)

10

2SK970

Reverse Drain Current vs.


Source to Drain Voltage

Reverse Drain Current IDR (A)

20
Pulse Test

16

12

8
10 V
15 V
4
5V
VGS = 0, 5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance s (t)

Normalized Transient Thermal Impedance vs. Pulse Width


3
TC = 25C

D=1

1.0

0.5
0.3

0.2

0.1

0.1
0.05
0.02

0.03

1
0.01
10

chc (t) = S (t) chc


chc = 4.17C/W, TC = 25C
PDM

1
0.0 Pulse
t
o
Sh

100

T
1m

10 m
Pulse Width PW (s)

100 m

PW
1

D = PW
T

10

2SK970

Switching Time Test Circuit

Wavewforms

Vin Monitor
90 %
Vout Monitor
D.U.T
RL

Vin
Vout

10 %
10 %

10 %

50
Vin = 10 V

. 30 V
VDD =
.

td (on)

90 %
tr

90 %
td (off)

tf

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