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DepartmentofMetallurgicalandMaterialsEngineering
MT201ElectricalandElectronicMaterials
Tutorial1
1.
i.
ii.
2.
3.
i.
ii.
4.
i.
ii.
iii.
iv.
v.
vi.
n
=w
M
i
i
i
w
M
+w
M
++w
M
1
1
2
2
N
N
Statevariousphysicalandmechanicalpropertiesofmaterials.
Explainhowthebonding
type
affecttheaboveproperties.Giveexamples.
Define
and
explain
thefollowingwiththehelpofsuitable
diagrams
Spacelattice
Unitcellandlatticeparameters
Crystalsystems
Bravaislatticeandtheirclassification
OriginforthecreationofFCCBravaislatticefromaprimitivecubiclattice
Crystalvoidsandtheircoordinates
5.
i.
ii.
iii.
iv.
v.
vi.
vii.
viii
.
6.
i.
ii.
iii.
iv.
v.
vi.
7.
i.
Calculatethefollowing:
Effectivenumberofatoms
inSC,BCC,FCC,HCPunitcells
Relationship between the size of the unit cell and atomic diameter in SC, BCC,
FCC,HCPunitcells
Packingfactors
ofBCC,FCC,HCPunitcells
Packingfactor
ofadiamondcubiccrystalstructure
Coordinationnumbers
ofBCC,FCC,HCPcrystallattice
c/aratio
foranidealHCPunitcell
Sizeoflargestspherethatcanfitintothetetrahedral&octahedralinterstitialsites
ofaclosepackedstructureswithoutdistortingtheunitcell.
Volumeofunitcellofgermanium incubicmeters,theatomicradiusofGehaving
o
DiamondCubicstructurebeing1.223A
Showwiththehelpofneatsketchesthefollowing:
Planes whose Miller indices are (111), (210), (010), (0 ), (002), (130), (212)
and(32).
6direction<110>onanyone{111}
GiventheSilatticeparametera=0.543nm.CalculatethenumberofSiatomsperunitvolume,in
3
nm
.
ii.
2
2
Calculatethenumberofatomsperm
andpernm
onthe(100),(110),and(111)planesintheSi
crystalasshowninabovefigure.Whichplanehasthemaximumnumberofatomsperunitarea?
iii.
3
ThedensityofSiO
is2.27gcm
.Giventhatitsstructureisamorphous,calculatethenumberof
2
3
moleculesperunitvolume,innm
.Compareyourresultwith(i)andcommentonwhathappens
whenthesurfaceofaSicrystaloxidizes.TheatomicmassesofSiandOare28.09and16,
respectively.
8.
Indevicefabrication,Siisfrequentlydopedbythediffusionofimpurities(dopants)athigh
0
temperatures,typically9501200
C.TheenergyofvacancyformationintheSicrystalisabout
0
3.6eV.WhatistheequilibriumconcentrationofvacanciesinaSicrystalat1000
C?Neglectthe
changeinthedensitywithtemperaturewhichislessthan1percentinthiscase.
i.
Describewithneatsketches,the3typesoflinedefectsandrelate
b,
Burgersvectorwith
dislocationline.
ii.
Describeplanardefectsgrainboundariesandsurfacedefects
iii.
Howdothedefectsaffecttheelectricalconductivityofthematerials?
10
.
i.
Whataretheallotropicallydifferentformsofcarbon?
ii.
Giveneatsketchesoftheircrystalstructures.
iii.
Howdoyouclassifythesematerialsintermsofelectricalconductivity?
11
.
i.
Whysinglecrystalsareusedforelectronicapplications?Explainmethodsofbulksinglecrystal
growth.
ii.
Whatisepitaxialgrowth?Explainwithoneexampleeachofgrowthforbinary,ternaryand
quaternarysemiconductorcompounds,withthehelpofEgvslatticeparameterofthecrystalplot.
iii.
Whatisthesignificanceofdistributioncoefficientinzonerefining?
12
.
i.
Howamorphoussemiconductorsareprepared?Giveanexample.
ii.
Explainhowthenonstoichiometeric,ZnOcrystalwithexcessZnattheinterstitialsitescontribute
freeelectronforconduction.
13
.
Consider50%Pb50%Snsolderalloy:
i.
Sketchthemicrostructureofthealloyatvariousstagesasitiscooledfromthemelt.Whatisthe
importanceofthisalloyinelectricalapplications?
ii.
Atwhattemperaturedoesthesolidmelt?Whatisthesignificanceofthistemperature?
iii.
Whatisthetemperaturerangeoverwhichthealloyisamixtureofmeltandsolid?whatisthe
microstructureofthesolid?
iv.
0
Considerthesolderatroomtemperaturefollowingcoolingfrom183
C.Assumethattherateof
0
coolingfrom183
Ctoroomtemperatureisfasterthantheatomicdiffusionratesneededtochange
thecompositionsofthe
and
phasesinthesolid.Assumingthealloyis1kg.Calculatethe
massesofthefollowingcomponentsinthesolid.
a)Theprimary
(proeutectic)
,
b)
inthewholealloy,c)
intheeutecticsolidand
d)
inthealloy(whereisthe
phase?)
e)ForPb40Sn,findthedegreeoffreedomat,
i)liquidregion,ii)liquidus,iii)twophasemushyregion,iv)solidusandv)atroomtemperature.