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September 2013
Data Sheet
Features
50A, 60V
rDS(ON) = 0.022
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature
Symbol
Ordering Information
PART NUMBER
RFP50N06
PACKAGE
TO-220AB
BRAND
RFP50N06
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
RFP50N06 Rev. C0
RFP50N06
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFP50N06
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
UNITS
V
V
V
A
60
60
20
50
(Figure 5)
(Figure 6)
131
0.877
-55 to 175
W
W/oC
oC
oC
oC
300
260
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TYP
MAX
UNITS
PARAMETER
SYMBOL
BVDSS
TEST CONDITIONS
60
VGS(TH)
TC = 25oC
TC = 150oC
IDSS
VDS = 60V,
VGS = 0V
50
IGSS
VGS = 20V
100
nA
0.022
95
ns
12
ns
55
ns
td(OFF)
37
ns
tf
13
ns
rDS(ON)
Turn-On Time
tON
td(ON)
Rise Time
tr
tOFF
Qg(TOT)
VGS = 0 to 20V
Qg(10)
VGS = 0 to 10V
Qg(TH)
VGS = 0 to 2V
Input Capacitance
CISS
Output Capacitance
COSS
CRSS
75
ns
125
150
nC
67
80
nC
3.7
4.5
nC
2020
pF
600
pF
200
pF
RJC
(Figure 3)
1.14
oC/W
RJA
TO-220
62
oC/W
MIN
TYP
MAX
UNITS
ISD = 50A
1.5
125
ns
SYMBOL
VSD
trr
TEST CONDITIONS
RFP50N06 Rev. C0
RFP50N06
Unless Otherwise Specified
1.2
60
1.0
50
ID , DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
40
30
20
10
0
0
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
150
25
175
50
75
100
125
150
175
THERMAL IMPEDANCE
ZJC, NORMALIZED
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE
0.01 -5
10
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
101
100
100
100s
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
VDSS(MAX) = 60V
1
103
TJ = MAX RATED
SINGLE PULSE
TC = 25oC
100
175 T C
I = I 25 ------------------------
150
VGS = 20V
VGS = 10V
TC = 25oC
102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100ms
DC
10
400
40
10-3
10-2
10-1
100
101
102
t, PULSE WIDTH (ms)
103
104
RFP50N06 Rev. C0
RFP50N06
Typical Performance Curves Unless Otherwise Specified
(Continued)
300
125
100
VGS = 10V
STARTING TJ = 25oC
STARTING TJ = 150oC
10
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
VGS = 7V
75
50
0.1
VGS = 6V
VGS = 5V
25
If R 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
1
0.01
VGS = 8V
100
VGS = 4V
0
0
10
1.5
3.0
4.5
6.0
7.5
100
-55oC
2.5
25oC
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
125
175oC
75
50
25
0
0
2.0
1.5
1.0
0.5
0
-80
10
-40
80
120
160
200
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
40
2.0
1.5
1.0
0.5
0
-80
-40
40
80
120
160
200
ID = 250A
1.5
1.0
0.5
0
-80
-40
40
80
120
160
200
RFP50N06 Rev. C0
RFP50N06
(Continued)
3000
C, CAPACITANCE (pF)
10
60
4000
CISS
2000
COSS
1000
CRSS
0
0
10
15
20
VDD = BVDSS
VDD = BVDSS
7.5
45
5.0
30
0.75 BVDSS
0.75 BVDSS
0.50 BVDSS
0.50 BVDSS
0.25 BVDSS
0.25 BVDSS
RL = 1.2
Ig(REF) = 1.45mA
VGS = 10V
15
2.5
25
20
Ig(REF)
t, TIME (s)
Ig(ACT)
80
Ig(REF)
Ig(ACT)
tP
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01
tAV
tON
tOFF
td(ON)
VDS
td(OFF)
tf
tr
VDS
90%
90%
RL
VGS
DUT
RGS
VGS
VDD
10%
90%
VGS
0
10%
10%
50%
50%
PULSE WIDTH
RFP50N06 Rev. C0
RFP50N06
Test Circuits and Waveforms
(Continued)
VDS
VDD
RL
Qg(TOT)
VDS
VGS = 20V
VGS
Qg(10)
VDD
DUT
Ig(REF)
VGS = 10V
VGS
VGS = 2V
0
Qg(TH)
Ig(REF)
0
RFP50N06 Rev. C0
RFP50N06
PSPICE Electrical Model
.SUBCKT RFP50N06 2 1 3
REV 2/22/93
CA 12 8 3.68e-9
CB 15 14 3.625e-9
CIN 6 8 1.98e-9
DRAIN
2
LDRAIN
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
DPLCAP
DBREAK
EVTO
GATE
9
1
LGATE
20
RGATE
18
8
RDRAIN
6
8
VTO
16
ESG
EBREAK 11 7 17 18 64.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
10
MOS1
RIN
8
12
LDRAIN 2 5 1e-9
LGATE 1 9 5.65e-9
LSOURCE 3 7 4.13e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 0.690
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 12e-3
RVTO 18 19 RVTOMOD 1
13
8
S1B
+
EGS 6
- 8
17
EBREAK
18
RSOURCE
LSOURCE
S2A
14
13
15
17
RBREAK
S2B
13
CA
11
CIN
IT 8 17 1
S1A
DBODY
MOS2
21
3
SOURCE
18
RVTO
CB
14
+
5
EDS 8
IT
19
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8)
.MODEL DBKMOD D (RS=1.98e-1 TRS1=2.35E-4 TRS2=-3.83e-6)
.MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-7)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5)
.MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options; authors, William J. Hepp and C. Frank Wheatley.
RFP50N06 Rev. C0
RFP50N06
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
RFP50N06 Rev. C0