DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,

PART NUMBER

PACKAGE

2SK3298

Isolated TO-220

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)
Avalanche capability ratings
Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)

VDSS

600

Gate to Source Voltage (VDS = 0 V)

VGSS

30

Drain Current (DC) (TC = 25C)

ID(DC)

7.5

ID(pulse)

30

Total Power Dissipation (TA = 25C)

PT1

2.0

Total Power Dissipation (TC = 25C)

PT2

40

Channel Temperature

Tch

150

Storage Temperature

Tstg

55 to +150

IAS

7.5

EAS

37.5

mJ

Drain Current (Pulse)

Note1

Single Avalanche Current

Single Avalanche Energy

Note2

Note2

Notes 1. PW 10 s, Duty Cycle 1 %

2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan

The mark shows major revised points.

1999, 2000

2SK3298
ELECTRICAL CHARACTERISTICS(TA = 25C)
CHARACTERISTICS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Drain Leakage Current

IDSS

VDS = 600 V, VGS = 0 V

100

Gate Leakage Current

IGSS

VGS = 30 V, VDS = 0 V

100

nA

VGS(off)

VDS = 10 V, ID = 1 mA

2.5

3.5

| yfs |

VDS = 10 V, ID = 4.0 A

3.2

RDS(on)

VGS = 10 V, ID = 4.0 A

0.67

Gate Cut-off Voltage

Forward Transfer Admittance
Drain to Source On-state Resistance

0.75

Input Capacitance

Ciss

VDS = 10 V

1580

pF

Output Capacitance

Coss

VGS = 0 V

280

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

25

pF

Turn-on Delay Time

td(on)

ID = 4.0 A

27

ns

tr

VGS(on) = 10 V

14

ns

td(off)

VDD = 150 V

66

ns

tf

RG = 10

24

ns

Total Gate Charge

QG

ID = 7.5 A

34

nC

Gate to Source Charge

QGS

VDD = 450 V

8.2

nC

Gate to Drain Charge

QGD

VGS = 10 V

12.3

nC

Rise Time
Turn-off Delay Time
Fall Time

TEST CONDITIONS

Diode Forward Voltage

VF(S-D)

IF = 7.5 A, VGS = 0 V

1.0

Reverse Recovery Time

trr

IF = 7.5 A, VGS = 0 V

1.6

Reverse Recovery Charge

Qrr

di/dt = 50 A/s

9.0

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.
RG = 25

D.U.T.

RL

PG.

50

VDD

VGS = 20 0 V

RG

PG.

VGS
VGS
Wave Form

90 %

ID

VGS
0

ID

Starting Tch

= 1 s
Duty Cycle 1 %

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

RL

50

VDD

10 %

0 10 %

Wave Form

VDD

PG.

90 %

BVDSS
VDS

ID

90 %

VDD
ID

IAS

VGS(on)

10 %

Data Sheet D14059EJ1V0DS00

tr td(off)

td(on)
ton

tf
toff

2SK3298
TYPICAL CHARACTERISTICS (TA = 25 C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30

100

Pulsed

VDS = 10 V
Pulsed

Tch = 25C
25C

VGS = 10 V

25

8.0 V

ID - Drain Current - A

ID - Drain Current - A

FORWARD TRANSFER CHARACTERISTICS

20
6.0 V
15
10

10
Tch = 75C
125C
1.0

0.1

5
0
10

20

30

40

VDS - Drain to Source Voltage - V

| yfs | - Forward Transfer Admittance - S

VGS(off) - Gate to Source Cut-off Voltage - V

VDS = 10 V
ID = 1 mA
4.0

3.0

2.0

1.0

50

100

15

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

5.0

50

10

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE

vs. CHANNEL TEMPERATURE

150

Tch - Channel Temperature - C

100

VDS = 10 V
Pulsed
Tch = 25C
25C
75C
125C

10

1.0

0.1
0.1

1.0

10

100

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE
Pulsed
3.0

ID = 7.5 A
4.0 A

2.0

1.0

10

15

RDS(on) - Drain to Source On-State Resistance -

RDS (on) - Drain to Source On-State Resistance -

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT
4.0

3.0
VGS = 10 V
2.0

20 V

1.0

Pulsed
0

VGS - Gate to Source Voltage - V

10

100

ID - Drain Current - A

Data Sheet D14059EJ1V0DS00

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

Pulsed

3.0
ID = 7.5 A
4.0 A
2.0

1.0

VGS = 10 V
Pulsed
100
150

50

100

10

1.0
VGS = 10 V

0.1

Tch - Channel Temperature - C

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

100

Ciss
1000

Coss

10
Crss

VGS = 0 V
f = 1MHz
1

10

100

10

tr
1
VDD = 150 V
VGS(on) = 10 V
RG = 10

0.1
0.1

1000

trr - Reverse Recovery Time - s

di/dt = 50 A/ s
VGS = 0 V

0.1

10

100

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

0.01
0.1

1
10
ID - Drain Current - A

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

800
16
ID = 7.5 A
14
600

12

VDD = 450 V
300 V
150 V

10

400

8
VGS
6

200

4
VDS

0
0

10

2
20

30

QG - Gate Charge - nC

ID - Drain Current - A

1.5

td(off)
tf
td(on)

VDS - Drain to Source Voltage - V

10

SWITCHING CHARACTERISTICS

10000

1
0.1

0.5

VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE

100

0V

Data Sheet D14059EJ1V0DS00

0
40

VGS - Gate to Source Voltage - V

0
50

ISD - Diode Forward Current - A

RDS (on) - Drain to Source On-State Resistance -

2SK3298

2SK3298

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE
40

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

100

80

60

40

20

0
0

20

40

60

80

100

120 140

30

20

10

160

Tch - Channel Temperature - C

20

40

60

80

100

120 140

160

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

100

10

)
on
S(

10
0
s

Po
we
r

TC = 25C
Single Pulse

=1
0
s

1m
3m s
s
10
m
s

30
m
s

0.1
1

PW

d
ite
Lim ID(DC)

RD

10
0m
Di
ss
s
ipa
tio
n
Lim
ite
d

10

100

1000

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

r th (t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

ID(pulse)

Rth(ch-A) = 62.5 C/W

100

10
Rth(ch-C) = 3.13 C/W
1

0.1
Single Pulse

0.01
10

100

1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet D14059EJ1V0DS00

2SK3298

SINGLE AVALANCHE ENERGY

DERATING FACTOR

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD
120

IAS = 7.5 A

10

EAS

=3

7.5

mJ

1.0
RG = 25
VDD = 150 V
VGS = 20 V 0 V
Starting Tch = 25C

0.1
10

100

1m

10 m

Energy Derating Factor - %

IAS - Single Avalanche Energy - A

100

VDD = 150 V
RG = 25
VGS = 20 V 0 V
IAS 7.5 A

100
80
60
40
20
0
25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - H

PACKAGE DRAWING (Unit : mm)

Isolated TO-220 (MP-45F)

3.2 0.2

0.7 0.1

4.5 0.2
2.7 0.2

12.0 0.2

EQUIVALENT CIRCUIT
Drain (D)

13.5 MIN.

4 0.2

3 0.1

15.0 0.3

10.0 0.3

1.3 0.2
1.5 0.2
2.54 TYP.

2.54 TYP.

Body
Diode

Gate (G)

2.5 0.1

Source (S)

0.65 0.1

1.Gate
2.Drain
3.Source
1 2 3

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14059EJ1V0DS00

2SK3298
[MEMO]

Data Sheet D14059EJ1V0DS00

2SK3298

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confirm that this is the latest version.
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M7 98. 8

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