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Homework #4
Use SPICE simulation to find the parameters K n nCox , , and for ON Semi
0.5um NMOS transistor. To eliminate the short channel effects in your
measurements, choose channel length of L = 10um. Assume transistor aspect
ratio (W/L) = 5, supply voltage Vdd = 5 V, zero-biased threshold voltage
VTno = 0.63 V, and 2 f 0.83 V .
to Drain terminal (VDS=VGS) and measure the slope of the curve as explained in the
class. To measure , make the same plot for VBS = 0 V and VBS = -1 V and measure the
shift of the carves as explained in the class. To measure , plot ID versus VDS
when VGS = 3.0 V and measure the slope of the curve in saturation region. For long
channel device you will find 0 V 1 .
2.
Repeat step 1 for short channel device. Assume channel length of the NMOS
device is now L = 0.5um.
Hint: Use the hint given in step one. You will find that the plot of
I DS versus VGS
wont be a straight line in this case. Explain which part of this curve represents velocity
saturation. Measure the slope at the region that the transistor is not in velocity saturation
and compare your K n nCox with your measurement in step 1. Dont forget to measure
in this case.
3.
Use the simplified velocity saturation model and find VDSAT when L = 0.5 um.
Assume that n 449.41 cm 2 vs and saturation velocity of electron is
5
sat =1.972 x 10 m/s. Show the value of VGS=VDSat in your I DS versus VGS
plot in step 2.
4.
As we reduce the channel length from 10um to 0.5um, the short channel effect
starts to show. Use the simplified velocity saturation model and determine at which
channel length the velocity saturation starts to show. Assume VDSat = Vdd = 5 V.
5.
6.
7.