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STP6NA60FP
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STP6NA60F P

V DSS

R DS(on)

ID

600 V

< 1.2

3.9 A

TYPICAL RDS(on) = 1
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD

3
1

DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and gate charge,
unequalled
ruggedness
and
superior
switching performance.

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol
V DS
VDGR
V GS
ID
ID
I DM ()
P t ot
V ISO
T stg
Tj

Parameter
Drain-source Voltage (V GS = 0)
Drain- gate Voltage (R GS = 20 k)
Gate-source Voltage
Drain Current (continuous) at T c = 25 o C
o
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
Total Dissipation at Tc = 25 o C
Derating Factor
Insulation W ithstand Voltage (DC)
St orage Temperature
Max. Operating Junction Temperature

Valu e
600
600
30
3.9
2.6
26
40
0.32
2000
-65 to 150
150

Unit
V
V
V
A
A
A
W
o
W/ C
V
o
C
o
C

() Pulse width limited by safe operating area

October 1997

1/5

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STP6NA60FP
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl

Thermal Resistance Junction-case

Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose

3.12
62.5
0.5
300

C/W
oC/W
o
C/W
o
C

Max Valu e

Unit

AVALANCHE CHARACTERISTICS
Symb ol

Parameter

I AR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, < 1%)

6.5

E AS

Single Pulse Avalanche Energy

(starting Tj = 25 o C, I D = IAR , VDD = 50 V)

215

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symb ol
V (BR)DSS

Parameter
Drain-source
Breakdown Voltage

Test Cond ition s

I D = 250 A

Zero
Gate
Voltage V DS = Max Rating
Drain Current (VGS = 0) V DS = Max Rating

I GSS

Gate-body
Leakage V GS = 30 V
Current (V DS = 0)

Typ .

Max.

600

V GS = 0

I DSS

Min.

Un it
V

T c = 100 o C

25
250

A
A

100

nA

ON ()
Symb ol

Parameter

Test Cond ition s

ID = 250 A

V GS(th)

Gate
Voltage

R DS( on)

Static Drain-source On V GS = 10V I D = 2.5 A

Resistance

ID(o n)

Threshold V DS = VGS

Min.

Typ .

Max.

Un it

2.25

3.75

1.2

6.5

On State Drain Current V DS > I D(on) x R DS(on) max

V GS = 10 V

DYNAMIC
Symb ol
g fs ()
C iss
C oss
C rss

2/5

Parameter

Test Cond ition s

Forward
Transconductance

V DS > I D(on) x R DS(on) max

Input Capacitance
Output Capacitance
ReverseTransfer
Capacitance

V DS = 25 V

f = 1 MHz

ID = 3 A
VGS = 0

Min.

Typ .

3.5

5.6
1150
155
40

Max.

Un it
S

1550
210
55

pF
pF
pF

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STP6NA60FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol

Parameter

Test Cond ition s

t d(on)
tr

Turn-on Time
Rise Time

V DD
= 300 V
ID
V GS = 10 V
R G = 47

Qg
Q gs
Q gd

Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

V DD = 480 V

ID = 3 A

Min.
=

V GS = 10 V

Typ .

Max.

Un it

35
90

55
125

ns
ns

54
8
23

75

nC
nC
nC

Typ .

Max.

Un it

80
20
115

110
30
155

ns
ns
ns

Typ .

Max.

Un it

6.5
26

A
A

1.6

SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc

Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time

Test Cond ition s

Min.

V DD = 480 V I D = 6 A
R G = 47 VGS = 10 V
(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symb ol

Parameter

I SD
I SDM ()

Source-drain Current
Source-drain
Current
(pulsed)

V SD ()

Forward On Voltage

t rr
Q rr
I RRM

Reverse
Time
Reverse
Charge
Reverse
Current

Test Cond ition s

I SD = 6.5 A

Min.

V GS = 0

Recovery I SD = 6 A di/dt = 100 A/s

o
T j = 150 C
V DD = 100 V
Recovery (see circuit, figure 5)

600

ns

Recovery

30

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area

3/5

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STP6NA60FP

TO-220FP MECHANICAL DATA

mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

4.4

4.6

0.173

0.181

2.5

2.7

0.098

0.106

2.5

2.75

0.098

0.108

0.45

0.7

0.017

0.027

0.75

0.030

0.039

F1

1.15

1.7

0.045

0.067

F2

1.15

1.7

0.045

0.067

4.95

5.2

0.195

0.204

G1

2.4

2.7

0.094

0.106

10

10.4

0.393

0.409

L2

16

0.630

28.6

30.6

1.126

1.204

L4

9.8

10.6

0.385

0.417

L6

15.9

16.4

0.626

0.645

L7

9.3

0.354

0.366

3.2

0.118

0.126

L3

L3
L6

F1

L7

F2

G1

1 2 3
L2

4/5

L4

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STP6NA60FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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