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1. INTRODUCTION
Solar cell technologies are an attractive option
for clean and renewable energy generation in the
form of electricity. Several technologies have
been developed since 1950s and many of them
are now reached to a stage of commercialization
[1]. But photovoltaic (PV) solar electricity is still
not economical in comparison to the grid power
that we use today. The cost of photovoltaic
electricity is about 60 $cents/kWh in temperate
climate and about 30 $cents/kWh for climates
with a high solar insulation. This is substantially
higher than the retail price of conventional
electricity and much higher than bulk electricity
price. The main reason for the high cost of
present PV modules is the high cost of the base
material, ultra-pure Silicon (Si) wafers, mostly
used in todays solar cell technologies. Si solar
cells, which contribute 94% of the world market,
are made from single crystalline - and multicrystalline silicon (Si-sc & Si-mc). Because of
the high electronic quality of Si-sc and Si-mc
(diffusion lengths in the range of 100s of
micrometer) cells with stable and reasonably
high efficiencies (ranging from 14 to 25%) can
be realized in these materials.
2. TECHNOLOGICAL PROCESS
In proceeded experiments were used
multicrystalline silicon wafers p type, with
rezistivity 0.5-1cm, thickness 450m and area
55cm2. The wafers of multicrystalline silicon
were processed using the planar technology of
integrated circuits fabrication to obtain solar cell
structure of 11cm2. The solar cells surface
texturization was made using the MEMS
technology.
For configuration the patterns of processed
substrate on wafers (SI-mc) was used 4 inch
chromium work masks in order to perform the
lithography with positive resist.
The 11cm2 solar cells were processed in five
versions, with and without surface texturization,
the texturization being processed in acid and
alkaline solutions. The obtained solar cells
devices will be compared for obtaining an
evaluation of texturization contribution and of the
substrate doping in the final device parameters.
The technological flux of solar cells
fabrication on multicrystalline silicon substrate
(Si-mc) contains the next steps:
Water vapours thermal oxidation at
T=1100C in order to crate a masking layer
441
(a)
(b)
(c)
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Light
power
(mW/cm2)
14
14
14
14
14
0.35
0.46
0.36
0.47
0.35
KOH+B+
KOH
Acid+B+
Acid
without
[2]
Fig. 9. The electrical characteristic of solar cells
(the wafer no. 1, table 1).
[3]
[4]
4. CONCLUSIONS
The work is an important step in order to
reduce the production costs by minimizing the
technological steps and using low cost materials
with efforts to maintain the device characteristics
at high level performances. The main efforts are
focus to conversion efficiency by enlargement
the absorption spectrum of solar cells, reduce the
reflexivity of solar light and of the series
resistance.
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