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Analog Power

AM4407P

P-Channel 30-V (D-S) MOSFET


These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.

PRODUCT SUMMARY
VDS (V)
rDS(on) m()
9 @ VGS = -10V
-30
13 @ VGS = -4.5V

Low rDS(on) Provides Higher Efficiency and


Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (25) for battery pack
applications

ID (A)
-15
-11

ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)


Parameter
Symbol Maximum Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
25
VGS
o

TA=25 C

Continuous Drain Current

TA=70 C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

-15

ID
IDM

50

IS

-2.1

TA=25 C

Power Dissipation

TA=70 C

THERMAL RESISTANCE RATINGS


Parameter
a

Maximum Junction-to-Case
a
Maximum Junction-to-Ambient

t <= 5 sec
t <= 5 sec

RJC
RJA

2.3

TJ, Tstg

Symbol

3.1

PD

Operating Junction and Storage Temperature Range

-11

-55 to 150

Maximum
25
50

Units
o
o

C/W
C/W

Notes
a.
Surface Mounted on 1 x 1 FR4 Board.
b.
Pulse width limited by maximum junction temperature

1
September, 2002 - Rev. A
PRELIMINARY

Publication Order Number:


DS-AM4407_C

Analog Power

AM4407P

SPECIFICATIONS (T A = 25oC UNLESS OTHERWISE NOTED)


Parameter

Symbol

Test Conditions

VGS(th)
IGSS

VDS = VGS, ID = -250 uA

Min

Limits
Unit
Typ Max

Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current

IDSS
ID(on)

Drain-Source On-Resistance

rDS(on)

-1

VDS = 0 V, VGS = 25 V

100

VDS = -24 V, VGS = 0 V

-1
-5

VDS = -24 V, VGS = 0 V, TJ = 55 C

VDS = -5 V, VGS = -10 V


VGS = -10 V, ID = -13 A
VGS = -4.5 V, ID = -11 A

A
9
13

uA

-50

VGS = -10 V, ID = -13 A, TJ = 55 C


Forward Tranconductance
Diode Forward Voltage

V
nA

11

gfs
VSD

VDS = -5 V, ID = -13 A
IS = 2.1 A, VGS = 0 V

44
-0.7

S
V

Qg
Qgs
Qgd

VDS = -15 V, VGS = -10 V,


ID = -13 A

37.0
10.0
14.5

nC

td(on)
tr
td(off)
tf

VDD = -15 V, RL = 6 , ID = -1 A,
VGEN = -10 V

19
11
121
68

nS

Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time

Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.

Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by
customers technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

2
September, 2002 - Rev. A
PRELIMINARY

Publication Order Number:


DS-AM4407_C

Analog Power

AM4407P

Typical Electrical Characteristics (P-Channel)


2.6

VGS = -10V

-3.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

50

40
-4.5V

-6.0V

-3.0V

30

20
-2.5V
10

VGS = -3.0V

2.2

1.8

-3.5V
-4.0V

-5.0V

-6.0V

-10V

0.6

0
0

0.5

1.5

10

-VDS, DRAIN TO SOURCE VOLTAGE (V)

40

50

0.04

RDS(ON) , ON-RESISTANCE (OHM)

RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

30

Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage

1.4

ID = -13A
VGS = -10V
1.2

0.8

0.6

ID = -13A
0.03

TA = 125 C

0.02

TA = 25 C

0.01

0
-50

-25

25

50

75

100

125

2.5

TJ, JUNCTION TEMPERATURE (oC)

-IS , REVERSE DRAIN CURRENT (A)

VDS = -5.0V
40

30
o

T A = -125 C
o

-55 C
o

25 C
0
2

2.5

3.5

4.5

100

VGS = 0V
10

T A = 125 C

1
0.1
0.01
o

25 C

0.001

-55 C

0.0001
0

-VGS , GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

Figure 5. Transfer Characteristics

with Source Current and Temperature

3
September, 2002 - Rev. A
PRELIMINARY

Gate to Source Voltage

50

10

3.5

Figure 4. On-Resistance Variation with

with Temperature

20

-VGS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

1.5

20

-ID, DIRAIN CURRENT (A)

Figure 1. On-Region Characteristics

-ID, DRAIN CURRENT (A)

-4.5V

1.4

Publication Order Number:


DS-AM4407_C

Analog Power

AM4407P

10

6000

ID = -13A

VDS = -10V
-15V

-20V
4

Ciss
4000
3000
2000

Coss
1000

Crss
0

0
0

10

20

30

40

50

60

70

80

90

Qg, GATE CHARGE (nC)

10

15

20

25

30

-VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics


60

100

10ms

10

100ms
1ms

P eak T ransient P ow er (W )

RDS(ON) LIMIT

-ID, DRAIN CURRENT (A)

f = 1 MHz
VGS = 0 V

5000

CAPACITANCE (pF

-VGS, GATE-SOURCE VOLTAGE (V)

Typical Electrical Characteristics (P-Channel)

100ms
10s

1s

DC
VGS = -10V
SINGLE PULSE

0.1

RqJA = 125 C/W


o

TA = 25 C

0.01
0.1

10

50
40
30
20
10
0
0.001

100

0.01

0.1

10

100

1000

TIME (S)

-VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power Dissipation

NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT


1

0.5

RQJ A(t) = R(t) + RQJ A


RQJA = 125C/W

0.2

0.1

P(P K)
t1

0.1

t2
0.05

T J - T A = P RQJ A(t)
0.02

SINGLE P ULSE

0.01
0.0001

0.001

0.01

0.1

10

100

1000

PULSE TIME (S)

Figure 11. Transient Thermal Response Curve

4
September, 2002 - Rev. A
PRELIMINARY

Publication Order Number:


DS-AM4407_C

Analog Power

AM4407P

Package Information
SO-8: 8LEAD

H x 45

5
September, 2002 - Rev. A
PRELIMINARY

Publication Order Number:


DS-AM4407_C

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