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Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.025 @ VGS = 10 V
7.1
APPLICATIONS
5.5
D Load Switches
Notebook PCs
Desktop PCs
Game Stations
S1
Pb-free
Available
S2
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
G1
Top View
G2
D1
D2
P-Channel MOSFET
P-Channel MOSFET
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
TA = 25_C
TA = 70_C
ID
IS
TA = 25_C
TA = 70_C
PD
V
5.3
7.1
5.7
4.3
IDM
40
1.7
0.9
2.0
1.1
1.3
0.7
TJ, Tstg
Unit
55 to 150
W
_C
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
50
62.5
85
110
30
40
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 72001
S-50366Rev. C, 28-Feb-05
www.vishay.com
Si4925BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
Typ
Max
Unit
"100
nA
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
IDSS
ID(on)
1
25
VDS = 5 V, VGS = 10 V
mA
40
VGS = 10 V, ID = 7.1 A
0.020
0.025
0.033
0.041
gfs
VDS = 10 V, ID = 7.1 A
20
VSD
IS = 1.7 A, VGS = 0 V
0.8
1.2
33
50
5.4
rDS(on)
DS( )
Forward Transconductancea
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
td(on)
Rise Time
tr
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
trr
nC
8.9
15
12
20
60
90
34
50
30
60
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Output Characteristics
Transfer Characteristics
40
40
TC = 55_C
VGS = 10 thru 5 V
25_C
30
I D Drain Current (A)
30
4V
20
10
125_C
20
10
3, 2 V
0
0
0
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2500
C Capacitance (pF)
r DS(on) On-Resistance ( W )
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
2000
Ciss
1500
1000
Coss
500
Crss
0.00
0
0
10
20
30
40
Gate Charge
24
30
VDS = 15 V
ID = 7.1 A
rDS(on) On-Resiistance
(Normalized)
18
10
VGS = 10 V
ID = 7.1 A
1.4
1.2
1.0
0.8
0
0
10
15
20
25
30
35
0.6
50
40
25
50
75
100
125
150
r DS(on) On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
50
12
ID = 7.1 A
0.06
ID = 3 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
www.vishay.com
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
30
0.6
25
ID = 250 mA
20
0.4
Power (W)
Threshold Voltage
0.8
0.2
15
0.0
10
0.2
0.4
50
25
25
50
75
100
125
0
102
150
101
TJ Temperature (_C)
10
100
600
Time (sec)
100
IDM Limited
P(t) = 0.0001
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
0.1
P(t) = 0.1
TA = 25_C
Single Pulse
P(t) = 1
P(t) = 10
dc
BVDSS Limited
0.01
0.1
10
100
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
Single Pulse
4. Surface Mounted
0.01
104
www.vishay.com
103
102
101
1
Square Wave Pulse Duration (sec)
10
100
600
Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72001.
Document Number: 72001
S-50366Rev. C, 28-Feb-05
www.vishay.com
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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