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Si4925BDY

Vishay Siliconix

Dual P-Channel 30-V (D-S) MOSFET


FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density
Process

PRODUCT SUMMARY
VDS (V)
30

rDS(on) (W)

ID (A)

0.025 @ VGS = 10 V

7.1

APPLICATIONS

0.041 @ VGS = 4.5 V

5.5

D Load Switches
Notebook PCs
Desktop PCs
Game Stations

S1

Pb-free
Available

S2

SO-8
S1
G1
S2
G2

D1

D1

D2

D2

G1

Top View

G2

D1

D2

P-Channel MOSFET

P-Channel MOSFET

Ordering Information: Si4925BDY


Si4925BDYT1 (with Tape and Reel)
Si4925BDYE3 (Lead (Pb)-Free)
Si4925BDY-T1E3 (Lead (Pb)-Free) with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


Parameter

Symbol

10 secs

Steady State

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

Continuous Drain Current (TJ = 150_C)a

TA = 25_C
TA = 70_C

Pulsed Drain Current

ID

IS
TA = 25_C

Maximum Power Dissipationa

TA = 70_C

Operating Junction and Storage Temperature Range

PD

V
5.3

7.1
5.7

4.3

IDM

continuous Source Current (Diode Conduction)a

40
1.7

0.9

2.0

1.1

1.3

0.7

TJ, Tstg

Unit

55 to 150

W
_C

THERMAL RESISTANCE RATINGS


Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)

Symbol
t v 10 sec
Steady State
Steady State

RthJA
RthJF

Typical

Maximum

50

62.5

85

110

30

40

Unit

_C/W
C/W

Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Document Number: 72001
S-50366Rev. C, 28-Feb-05

www.vishay.com

Si4925BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter

Symbol

Test Condition

Min

VGS(th)

VDS = VGS, ID = 250 mA

Typ

Max

Unit

"100

nA

Static
Gate Threshold Voltage
Gate-Body Leakage

IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain Source On-State


Drain-Source
On State Resistancea

VDS = 0 V, VGS = "20 V

Diode Forward Voltagea

1
25

VDS = 5 V, VGS = 10 V

mA

40

VGS = 10 V, ID = 7.1 A

0.020

0.025

VGS = 4.5 V, ID = 5.5 A

0.033

0.041

gfs

VDS = 10 V, ID = 7.1 A

20

VSD

IS = 1.7 A, VGS = 0 V

0.8

1.2

33

50

VDS = 15 V,, VGS = 10 V,, ID = 7.1 A

5.4

rDS(on)
DS( )

Forward Transconductancea

VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C

W
S
V

Dynamicb
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W

td(off)

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

nC

8.9

IF = 1.7 A, di/dt = 100 A/ms

15

12

20

60

90

34

50

30

60

ns

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

40

40
TC = 55_C

VGS = 10 thru 5 V

25_C
30
I D Drain Current (A)

I D Drain Current (A)

30
4V
20

10

125_C

20

10

3, 2 V
0

0
0

VDS Drain-to-Source Voltage (V)


www.vishay.com

VGS Gate-to-Source Voltage (V)


Document Number: 72001
S-50366Rev. C, 28-Feb-05

Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current

Capacitance
2500

C Capacitance (pF)

r DS(on) On-Resistance ( W )

0.08

0.06

VGS = 4.5 V

0.04

VGS = 10 V

0.02

2000
Ciss
1500

1000
Coss

500
Crss

0.00

0
0

10

20

30

40

ID Drain Current (A)

Gate Charge

24

30

On-Resistance vs. Junction Temperature


1.6

VDS = 15 V
ID = 7.1 A

rDS(on) On-Resiistance
(Normalized)

V GS Gate-to-Source Voltage (V)

18

VDS Drain-to-Source Voltage (V)

10

VGS = 10 V
ID = 7.1 A
1.4

1.2

1.0

0.8

0
0

10

15

20

25

30

35

0.6
50

40

25

Qg Total Gate Charge (nC)

Source-Drain Diode Forward Voltage

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage


0.08

r DS(on) On-Resistance ( W )

TJ = 150_C

10

TJ = 25_C

1
0.0

25

TJ Junction Temperature (_C)

50

I S Source Current (A)

12

ID = 7.1 A

0.06
ID = 3 A
0.04

0.02

0.00
0.2

0.4

0.6

0.8

1.0

VSD Source-to-Drain Voltage (V)

Document Number: 72001


S-50366Rev. C, 28-Feb-05

1.2

1.4

10

VGS Gate-to-Source Voltage (V)

www.vishay.com

Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
30

0.6

25
ID = 250 mA
20

0.4
Power (W)

V GS(th) Variance (V)

Threshold Voltage
0.8

0.2

15

0.0

10

0.2

0.4
50

25

25

50

75

100

125

0
102

150

101

TJ Temperature (_C)

10

100

600

Time (sec)
100

Safe Operating Area


*rDS(on)
Limited

IDM Limited
P(t) = 0.0001

I D Drain Current (A)

10
P(t) = 0.001
1

P(t) = 0.01

ID(on)
Limited
0.1

P(t) = 0.1

TA = 25_C
Single Pulse

P(t) = 1
P(t) = 10
dc
BVDSS Limited

0.01
0.1

10

100

VDS Drain-to-Source Voltage (V)


*VGS u minimum VGS at which rDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient


2

Normalized Effective Transient


Thermal Impedance

Duty Cycle = 0.5

0.2
Notes:

0.1

PDM

0.1
0.05

t1

t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = RthJA = 85_C/W


3. TJM TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
104

www.vishay.com

103

102

101
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 72001


S-50366Rev. C, 28-Feb-05

Si4925BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot

Normalized Effective Transient


Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
0.1
0.1

0.05
0.02

Single Pulse
0.01
104

103

102
101
Square Wave Pulse Duration (sec)

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72001.
Document Number: 72001
S-50366Rev. C, 28-Feb-05

www.vishay.com

Legal Disclaimer Notice


Vishay

Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000


Revision: 08-Apr-05

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