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2SA2210

Ordering number : ENA0667

SANYO Semiconductors

DATA SHEET

2SA2210

PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Applications

Relay drivers, lamp drivers, motor drivers.

Features

Adoption of MBIT processes.

Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

--50

Collector-to-Emitter Voltage

VCEO

--50

Emitter-to-Base Voltage

VEBO

--6

IC

--20

--25

Base Current

ICP
IB

--3

Collector Dissipation

PC

Junction Temperature

Tj

Storage Temperature

Tstg

Collector Current
Collector Current (Pulse)

Tc=25C

30

150

--55 to +150

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30707FA TI IM TC-00000565 No. A0667-1/4
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2SA2210
Electrical Characteristics at Ta=25C
Parameter

Symbol

Ratings

Conditions

min

typ

Unit

max

Collector Cutoff Current

ICBO

VCB=--40V, IE=0A

--10

Emitter Cutoff Current

IEBO
hFE

VEB=--4V, IC=0A

--10

DC Current Gain

fT

VCE=--2V, IC=--1A
VCE=--10V, IC=--1A

Cob

VCB=--10V, f=1MHz

215

VCE(sat)

IC=--7A, IB=--350mA
IC=--7A, IB=--350mA

--200

Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage

VBE(sat)
V(BR)CBO

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

Emitter-to-Base Breakdown Voltage

V(BR)EBO

Turn-ON Time
Fall Time

MHz
pF
--500

mV

--1.2

--50

--50

IE=--100A, IC=0A
See specified Test Circuit.

tf

450
140

IC=--100A, IE=0A
IC=--1mA, RBE=

ton
tstg

Storage Time

150

--6

V
60

ns

See specified Test Circuit.

270

ns

See specified Test Circuit.

20

ns

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)
7508-002
4.5

10.0

IB1

PW=20s
D.C.1%

2.8

3.2

IB2

RB

7.2

3.5

VR

RL
+

16.0

50

18.1

100F
VBE=5V

2.4

1 : Base
2 : Collector
3 : Emitter

2.55

SANYO : TO-220ML

IC -- VCE

--12
--10

0
--40
A
m
0
0

mA

--100mA

A --5
00m

--6

--10

--8

A
--200m

--6

0mA --4
00m --30
0mA
A
--20

--14

--9

Collector Current, IC -- A

00m --9
A 00m
A --80
0m
A

--16

0mA
--10
A
--80m

0mA

0mA
--30

--70

--18

IC -- VCE

--10

--8
--7
--6
--5
--4

--50

0m
A

--20

VCC= --20V

0.7

1 2 3

2.55

470F

IC=20IB1= --20IB2= --7A

14.0

5.6

1.6
1.2
0.75

Collector Current, IC -- A

OUTPUT

INPUT

--60mA

--40mA
--120mA
--160mA 40mA
--1
--20mA
--180mA

--3
--2

--4

--1

--2

IB=0mA

0
0

--0.5

--1.0

--1.5

Collector-to-Emitter Voltage, VCE -- V

IB=0mA

0
--2.0

IT12019

--0.2

--0.4

--0.6

--0.8

Collector-to-Emitter Voltage, VCE -- V

--1.0
IT12020

No. A0667-2/4
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2SA2210
IC -- VBE

--30

DC Current Gain, hFE

--15

--0.4

--0.6

2 5
C
--25
C

--0.8

--1.0

--1.2

Gain-Bandwidth Product, fT -- MHz

2V

5
--0.

0V

-2.
=E
VC

.
--0

--1.0V
--0.7V

DC Current Gain, hFE

3
2

2 3

5 7 --1.0

2 3

5 7 --10

2 3

Collector Current, IC -- A

3
2

100

100
7
5
3
2

7 --1.0

7 --10

Collector-to-Base Voltage, VCB -- V

5 7 --0.1

5 7 --1.0

3
2
--0.1
7
5
3
2

C
Ta= --25
75C
25C
2

5 7 --0.1

5 7 --1.0

Base-to-Emitter
Saturation Voltage, VBE(sat) -- V

--1.0
7
5
3

=
Ta

VBE(sat) -- IC

--1.0

Ta= --25C
7
5

75C
25C

75C

25C

--0.01
--0.01

C
5

--2
C
25

Ta= --25C

IT12026

IC / IB=20

--0.1
7
5

5 7 --10

Collector Current, IC -- A

IT12025
3

C
75

5 7 --10
IT12024

VCE(sat) -- IC

IC / IB=50

IC / IB=20

7
5
--0.01

VCE(sat) -- IC

5
3

--0.01

IT12022

Collector Current, IC -- A

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V

Output Capacitance, Cob -- pF

2 3

5 7 --10

--1.0

1000

2 3

VCE= --10V

IT12023

f=1MHz

5
--0.1

5 7 --1.0

fT -- IC

10
--0.01

Cob -- VCB

2 3

Collector Current, IC -- A

5 7 --0.1

5 7 --0.1

1000

10
--0.01 2 3

IT12021

Ta=25C

10
--0.01 2

--1.4

hFE -- IC

100

Base-to-Emitter Voltage, VBE -- V

1000

--25C
100

25
C

--0.2

0
0

Ta=75C
25C

Ta
=7
5
C
--2
5
C

--10

Ta
=7
5C

Collector Current, IC -- A

--20

--5

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V

VCE= --2V

--25

hFE -- IC

1000

VCE= --2V

5 7 --0.1

5 7 --1.0

Collector Current, IC -- A

5 7 --10

IT12027

2
--0.01

2 3

5 7 --0.1

2 3

5 7 --1.0

2 3

5 7 --10

Collector Current, IC -- A

2 3

IT12028

No. A0667-3/4
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2SA2210
Forward Bias A S O

00

0m

m
s

1m
s

--1.0
7
5

10

on
ati
er

op

3
2

Collector Dissipation, PC -- W

=5
PT

10

DC

/B

3
2

it
m
Li

Collector Current, IC -- A

IC= --20A

--10
7
5

--0.1
7
5
3
2

Tc=25C
Single pulse

--0.01
--0.1

PC -- Ta

2.5

ICP= --25A

3
2

2.0

1.5

No

he

at

sin

1.0

0.5

0
5

7 --1.0

7 --10

Collector-to-Emitter Voltage, VCE -- V

IT12029

20

40

60

80

100

120

140

Ambient Temperature, Ta -- C

160

IT12030

PC -- Tc

35

Collector Dissipation, PC -- W

30

25

20

15

10

5
0
0

20

40

60

80

100

120

Case Temperature, Tc -- C

140

160

IT12031

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0667-4/4
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