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Model Test Paper - I

GATE
Electronic Devices

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Practice Paper-I

Electronic Devices

Q. 1 - Q. 5 carry one mark each.

The intrinsic resistivity of Ge at 300 k is 0.47 W- m . It is given that the electronic

charge is 1.6 # 10-19 C and electron and hole mobilities are 0.39 and 0.19 m2 /volt-second
at 300 k. What will be the intrinsic carrier concentration of Ge ?
Q.1

(A) 2.29 # 1019 /m3

(B) 3.52 # 1019 /m3

(C) 4.17 # 1019 /m3

(D) None of these

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Q.2

Consider the following statements about MOSFET :

1.

MOSFETS for microwave application are fabricated from GaAs owing to its higher
electron mobility than silicon.

2.

MOSFET has lower switching speed than BJT.

3.

A metal gate depletion mode Si PMOS has positive threshold voltage.

4.

A depletion mode Si NMOS can be fabricated by reducing substrate doping significantly.

(B) 1, 3, 4 are correct

(C) 2, 4 are correct

Q.3

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(A) All are correct

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(D) 1, 2, 3 are correct

Consider the following statements :

Statement 1: To speed up the oxidation, it is necessary to use high temperature furnaces.

Statement 2: The dielectric strength of SiO 2 is approximately 107 V/cm
(A) Only Statement 1 is true
(B) Only Statement 2 is true
(C) Both the statements are true
(D) Both the statements are false
A semiconductor is doped with ND ^ND >> ni h and has resistance ^R1h. The same
semiconductor is then doped with an unknown amount of NA ^NA >> ND h, yielding a resistance of 0.2R1 . What will be the value of NA if Dn = 50 .
Dp
(B) NA = 100ND
(A) NA = 50ND
Q.4

(C) NA = 150ND

(D) NA = 250ND

Practice Paper-I

Electronic Devices

A Germanium sample is doped with Phosphorus to an extent of 1 is to 107 . Assume

that the effective mass of electron is equal to 65% of corresponding true value (Ge concentration = 4.41 # 1022 cm-3 ). What will be the location of Fermi level ?
Q.5

(A) Fermi level lies 77.38 eV below edge of conduction band

(B) Fermi level lies 77.38 eV above edge of conduction band
(C) Fermi level lies 38.69 eV below edge of conduction band
(D) Fermi level lies 38.69 eV above edge of conduction band

Q. 6 - Q. 15 carry two marks each.

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For the n-channel JFET shown in the figure below, the pinch off voltage, Vp =- 5V
and gate to source voltage, VGS =- 3V . What is the minimum required drain to source
voltage, VDS to operate at pinch off condition ?
Q.6

(A) 0V
(C) 5V

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(B) 2V
(D) 8V

Consider the step graded Ge semiconductor ND = 103 NA and with NA corresponding

to 1 acceptor atom per 108 Ge atoms. Assume that the concentration of monoatomic Ge
atom is 4.41 # 1022 atoms/cm3 and intrinsic concentration is 2.5 # 1013 atoms/cm3 . What
will be the build-in voltage at room temperature ?
Q.7

(A) 0.2567 V

(B) 0.4787 V

(C) 0.5267 V

(D) 0.3287 V

Q.8

A Si diode is at fixed forward bias of 0.4 V. When temperature is raised from 25cC
to 150cC , the current will get multiplied by the factor of

Practice Paper-I

Electronic Devices

(A) 480

(B) 380

(C) 580

(D) 680

Q.9

Consider an n -channel MOSFET with following properties:

Substrate doping = 1016 cm-3

eSiO = 3.9
! Si = 11.8
Oxide thickness = 100Ac
The gate voltage is slowly increased from a negative value such that the MOS experiences
strong accumulation, depletion and inversion gradually. What are the maximum and
minimum capacitances observed in this experiment? (Assume ideal MOSFET with no
metal-semiconductor work function difference)
C = 34.7nF/cm2
C = 31.7nF/cm2
(B) min
(A) min
C max = 345nF/cm2
C max = 345nF/cm2
2

(C)

C min = 33.58nF/cm2

(D)

C max = 1.0443mF/cm2

Q.10

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C min = 95.31nF/cm2

C max = 1.0443mF/cm2

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Consider the MOS circuit given below such that the MOS devices have VT = VT = 1V

Which among the following curves represent the transfer characteristic of the circuit shown
above?

Practice Paper-I

Electronic Devices

Q.11

The transconductance (gm ) of the MOS transistor is 4 mA/V and the common base
current gain of the bipolar transistor is 0.99.

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What will be the transconductance of the composite transistor circuit ?

(A) 39.6 mA/V

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(B) 3.96 mA/V

(C) 1.98 mA/V

(D) 1.99 mA/V

Numerical Answer Questions

The reverse saturation current of the collector base junction ^ICBO h of a BJT is found
to be 10 nA at low collector voltages. The low voltage current amplification factor ^ah is
0.98. What will be the percentage increase in collector voltage as the a increases by 1.0% ?
Q.12

An n -channel JFET has 1 mm long channel with Na = 1016 and Nd = 1020 in the
source and drain. What is the value of VD (in volt) which causes Pinch-off?

Q.13

Practice Paper-I

Electronic Devices

Common Data Questions

Common Data for Questions 14 and 15:
The current I in a forward biased P+ N junction is entirely due to diffusion of holes from
x = 0 to x = L . The injected hole concentration distribution in the n-region is linear as
shown in figure below with P ^0 h = 1012 /cm3 and L = 10-3 cm .

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If the diffusion coefficient of holes is 12 cm2 / sec , what will be the current density in
the diode ?

Q.14

(A) 1.92 mA/cm2

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(C) 1.92 mA/cm2

Q.15

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(B) 19.2 mA/cm2

(D) 19.2 mA/cm2

What will be the velocity of holes in the n-region at x = 0 ?

3

(A) 1 # 10 cm/sec
(C) 1 # 103 m/ sec

(B) 12 # 103 cm/ sec

(D) 12 # 103 m/ sec

END OF THE QUESTION PAPER

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