RAJ KUMAR GOEL ENGINEERING COLLEGE

40 km stone, NH-24, Delhi- Hapur Road, Pilkhuwa, Ghaziabad

SESSIONAL TEST - I (ECE- II Year)

Subject: Fundamental of Electronics Devices
Subject Code: NEC-302

Maximum Marks: 60
Time: 01:30 Hrs

NOTE: Attempt ALL the section.

SECTION A
Q. 1 Attempt ALL parts of the following.
(a) Explain how a BJT can be used as a switch.

(2 x 5 = 10)

(b) Explain the terms: Depletion mode and enhancement mode, Inbuilt and induced
channel.
(c) What are miller indices? How are they determined?
(d) Find the value of if =.90.
(e) A plane having intercept on three axis is (3, 5, -1). Find out Miller indices.
SECTION B
Q. 2 Attempt any THREE parts of the following.

(3 x 10 = 30)

(a) What is a MOSFET? How many types of MOSFETs are there? Point out the basic
difference between the FET and BJT.
(b) Explain the special features of MESFET. Explain its working also.
(c) Draw and explain the hole and electron flow in p-n-p transistor. State the various
current flowing across the device.
(d) With the help of a neat diagram explain the voltage divider biasing method for
BJT.
SECTION C
Q. 3 Attempt any TWO parts of the following.

(2 x 10 = 20)

(a) For a BCC lattice of identical atoms with a lattice constant of 5A, calculate the
maximum packing fraction and the radius of the atoms treated as hard spheres
with the nearest neighbors touching.
(b) What is atomic radius and atomic power factor? Calculate it for simple cubic
structure and FCC.
(c) Calculate the volume density of Si atoms (number of atoms/c.m 3), given that the
lattice constant of Si is 5.43A, Calculate the areal density of atoms (number/c.m 2)
on the plane (100).

RAJ KUMAR GOEL ENGINEERING COLLEGE

40 km stone, NH-24, Delhi- Hapur Road, Pilkhuwa, Ghaziabad

SESSIONAL TEST - I (ECE- II Year)

Subject: Fundamental of Electronics Devices
Subject Code: NEC-302

Maximum Marks: 60
Time: 01:30 Hrs

NOTE: Attempt ALL the section.

SECTION A
Q. 1 Attempt ALL parts of the following.
(a) Explain how a BJT can be used as a switch.

(2 x 5 = 10)

(b) Explain the terms: Depletion mode and enhancement mode, Inbuilt and induced
channel.
(c) What are miller indices? How are they determined?
(d) Find the value of if =.90.
(e) A plane having intercept on three axis is (3, 5, -1). Find out Miller indices.
SECTION B
Q. 2 Attempt any THREE parts of the following.

(3 x 10 = 30)

(a) What is a MOSFET? How many types of MOSFETs are there? Point out the basic
difference between the FET and BJT.
(b) Explain the special features of MESFET. Explain its working also.
(c) Draw and explain the hole and electron flow in p-n-p transistor. State the various
current flowing across the device.
(d) With the help of a neat diagram explain the voltage divider biasing method for
BJT.
SECTION C
Q. 3 Attempt any TWO parts of the following.

(2 x 10 = 20)

(a) For a BCC lattice of identical atoms with a lattice constant of 5A, calculate the
maximum packing fraction and the radius of the atoms treated as hard spheres
with the nearest neighbors touching.
(b) What is atomic radius and atomic power factor? Calculate it for simple cubic
structure and FCC.
(c) Calculate the volume density of Si atoms (number of atoms/c.m 3), given that the
lattice constant of Si is 5.43A, Calculate the areal density of atoms (number/c.m 2)
on the plane (100).