Semiconductor Engineering

Lecture No. 8 Ion Implantation

Cheng-Liang Liu
Dept of Chem & Mater Eng, National Central University

E-mail: clliu@ncu.edu.tw

Objectives

z List at least three commonly used dopants

z Identify three doped areas
z Describe the advantages of ion implantation
z Describe major components of an implanter
z Explain the channeling effect
z Relationship of ion range and ion energy
z Explain the post-implantation annealing
z Identify safety hazards

Ion Implantation

z Introduction
z Safety
z Hardware
z Processes
z Summary

Wafer Process Flow

Materials

IC Fab
Metalization

CMP

Dielectric
deposition

Test

Wafers
Thermal
Processes

Implant
PR strip

Etch
PR strip

Packaging

Masks
Photolithography
Design

Final Test

Introduction: Dope Semiconductor

z What is Semiconductor?
z Why semiconductor need to be doped?
z What is n-type dopant?
z What is p-type dopant?

Introduction

z Dope semiconductor
z Two way to dope
z Diffusion
z Ion implantation
z Other application of ion implantation

Dope Semiconductor: Diffusion

z Isotropic process
z Cant independently control dopant profile and
dopant concentration
z Replaced by ion implantation after its introduction
in mid-1970s.

Dope Semiconductor: Diffusion

z First used to dope semiconductor

z Performed in high temperature furnace
z Using silicon dioxide mask
z Still used for dopant drive-in
z R&D on ultra shallow junction formation.

Dopant Oxide Deposition

Deposited Dopant Oxide

SiO2
Si Substrate

Oxidation

SiO2
Si Substrate

Drive-in

SiO2
Doped junction
Si Substrate

Strip and Clean

SiO2
Doped junction
Si Substrate

Dope Semiconductor: Ion Implantation

z Used for atomic and nuclear research

z Early idea introduced in 1950s
z Introduced to semiconductor manufacturing in
mid-1970s.

Dope Semiconductor: Ion Implantation

z Independently control dopant profile (ion energy)

and dopant concentration (ion current times
implantation time)
z Anisotropic dopant profile
z Easy to achieve high concentration dope of heavy
dopant atom such as phosphorus and arsenic.

Misalignment of the Gate

Metal Gate

n-Si

p+ S/D
Aligned

Gate Oxide

n-Si

Metal Gate

p+ S/D
Misaligned

Ion Implantation, Phosphorus

SiO2

Poly Si
n+

P+
n+

P-type Silicon

Comparison of Implantation and Diffusion

Doped region

SiO2

PR

Si

Si
Junction depth
Diffusion

Ion implantation

Comparison of Implantation and Diffusion

Diffusion

Ion Implantation

High temperature, hard mask

Low temperature, photoresist mask

Isotropic dopant profile

Anisotropic dopant profile

Cannot independently control of the

dopant concentration and junction
depth

Can independently control of the

dopant concentration and junction
depth

Batch process

Both Batch and single wafer process

Ion Implantation Control

z Beam current and implantation time control dopant

concentration
z Ion energy controls junction depth
z Dopant profile is anisotropic

Applications of Ion Implantation

Applications

Doping

Ions

n-type: P, As, Sb
p-type: B

Pre-amorphous Buried oxide

Si or Ge

Poly barrier
N

Other Applications

z Oxygen implantation for silicon-on-insulator (SOI)

device
z Pre-amorphous silicon implantation on titanium
film for better annealing
z Pre-amorphous germanium implantation on silicon
substrate for profile control
z ...

Some Fact about Phosphorus

Name

Phosphorus

Symbol

Atomic number

15

Atomic weight

30.973762

Discoverer

Hennig Brand

Discovered at

Germany

Discovery date

1669

Origin of name

From the Greek word "phosphoros" meaning

"bringer of light" (an ancient name for the planet
Venus)

Density of solid

1.823 g/cm3

Molar volume

17.02 cm3

Velocity of sound

N/A

Some Fact about Phosphorus

Electrical
resistivity

10 mWcm

Refractivity

1.001212

Reflectivity

N/A

Melting point

44.3 C

Boiling point

277 C

Thermal
conductivity

0.236 W m-1 K-1

Coefficient of
linear thermal
expansion

N/A

Applications

N-type dopant in diffusion, ion implantation, epitaxial

grow and polysilicon deposition. Dopant of CVD
silicate glass (PSG and BPSG).

Main sources

P (red), PH3, POCl3

Some Fact about Arsenic

Name

Arsenic

Symbol

As

Atomic number

33

Atomic weight

74.9216

Discoverer

Known since ancient times

Discovered at

not known

Discovery date

not known

Origin of name

From the Greek word "arsenikon" meaning "yellow

orpiment"

Density of solid

5.727 g/cm3

Molar volume

12.95 cm3

Velocity of sound

N/A

Electrical
resistivity

30.03 mWcm

Some Fact about Arsenic

Refractivity

1.001552

Reflectivity

N/A

Melting point

614 C

Boiling point

817 C

Thermal
conductivity

50.2 W m-1 K-1

Coefficient of
linear thermal
expansion

N/A

Applications

N-type dopant in diffusion, ion implantation,

epitaxial grow and polysilicon deposition.

Main sources

As, AsH3

Some Fact about Boron

Name

Boron

Symbol

Atomic number

Atomic weight

10.811

Discoverer

Sir Humphrey Davy, Joseph-Louis Gay-Lussac,

and Louis Jaques Thnard

Discovered at

England, France

Discovery date

1808

Origin of name

From the Arabic word "buraq" and the Persian

word "burah"

Density of solid

2.460 g/cm3

Molar volume

4.39 cm3

Velocity of sound

16200 m/sec

Some Fact about Boron

Electrical resistivity

> 1012 mWcm

Refractivity

N/A

Reflectivity

N/A

Melting point

2076 C

Boiling point

3927 C

Thermal conductivity

27 W m-1 K-1

Coefficient of linear
thermal expansion

610-6 K-1

Applications

P-type dopant in diffusion, ion implantation,

epitaxial grow and polysilicon deposition.
Dopant of CVD silicate glass (BPSG)

Main sources

B, B2H6, BF3

Stopping Mechanism

z Ions penetrate into substrate

z Collide with lattice atoms
z Gradually lose their energy and stop
z Two stop mechanisms

Two Stopping Mechanism

z Nuclear stopping
z Collision with nuclei of the lattice atoms
z Scattered significantly
z Causes crystal structure damage.
z electronic stopping
z Collision with electrons of the lattice atoms
z Incident ion path is almost unchanged
z Energy transfer is very small
z Crystal structure damage is negligible

Stopping Mechanism

z The total stopping power

z Stotal = Sn + Se
z Sn: nuclear stopping, Se: electronic stopping
z Low E, high A ion implantation: mainly nuclear
stopping
z High E, low A ion implantation, electronic stopping
mechanism is more important

Stopping Mechanisms

Ion

Random Collisions
(S=Sn+Se)
Channeling
(SSe)
Back Scattering (SSn)

Stopping Power and Ion Velocity

Stopping Power

II

Nuclear
Stopping
Electronic
Stopping

Ion Velocity

III

Ion Trajectory and Projected Range

Vacuum

Substrate

Collision

Ion Trajectory
Ion Beam
Projected Range

Distance to the Surface

ln (Concentration)

Ion Projection Range

Projected
Range

Substrate Surface

Depth from the Surface

Projected Range in Silicon

Projected Range (m)

1.000

P
B
0.100
As
Sb

0.010
10

100
Implantation Energy (keV)

1000

Barrier Thickness to Block 200 keV Ion Beam

Mask Thickness (micron)

1.20
1.00
B

0.80
0.60

0.40

As

0.20
Sb
0.00

Si

SiO2

Si3N4

Al

PR

Implantation Processes: Channeling

z If the incident angle is right, ion can travel long
distance without collision with lattice atoms
z It causes uncontrollable dopant profile

zLots of collisions

zVery few collisions

Channeling Effect

Lattice Atoms
Channeling Ion

Collisional Ion

Wafer
Surface

Post-collision Channeling
Collisional

Wafer
Surface

Channeling

Collisional

Post-collision Channeling

Channeling

Collisional

Dopant Concentration

Collisional

Distance from surface

Implantation Processes: Channeling

z Ways to avoid channeling effect

z Tilt wafer, 7 is most commonly used
z Screen oxide
z Pre-amorphous implantation, Germanium
z Shadowing effect
z Ion blocked by structures
z Rotate wafer and post-implantation diffusion

Shadowing Effect
Ion Beam

Polysilicon

Substrate

Doped Region

Shadowed Region

Shadowing Effect

After Annealing and Diffusion

Polysilicon

Substrate

Doped Region

Q&A

z Why dont people use channeling effect to create

deep junction without high ion energy?

z Ion beam is not perfectly parallel. Many ions will

start to have a lot of nuclear collisions with lattice
atoms after they penetrating into the substrate. Some
ions can channel deep into the substrate, while many
others are stopped as the normal Gaussian
distribution.

Damage Process

Implanted ions transfer energy to lattice atoms

Atoms to break free
Freed atoms collide with other lattice atoms
Free more lattice atoms
Damage continues until all freed atoms stop
One energetic ion can cause thousands of displacements
of lattice atoms

Lattice Damage With One Ion

Light Ion

Damaged Region

Heavy Ion
Single Crystal Silicon

Implantation Processes: Damage

z Ion collides with lattice atoms and knock them out of
lattice grid
z Implant area on substrate becomes amorphous
structure

Before Implantation

After Implantation

Implantation Processes: Anneal

z Dopant atom must in single crystal structure and bond

with four silicon atoms to be activated as donor (Ntype) or acceptor (P-type)
z Thermal energy from high temperature helps
amorphous atoms to recover single crystal structure.

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

ThermalAnnealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atom

Thermal Annealing

Lattice Atoms

Dopant Atoms

Implantation Processes: Annealing

Before Annealing

After Annealing

Rapid Thermal Annealing (RTA)

z At high temperature, annealing out pace diffusion

z Rapid thermal process (RTP) is widely used for
post-implantation anneal
z RTA is fast (less than a minute), better WTW
uniformity, better thermal budget control, and
minimized the dopant diffusion

RTP and Furnace Annealing

Gate
Poly Si

Si

Source/Drain
RTP Annealing

Poly Si

Gate
SiO2
Si

Furnace Annealing

Q&A

z Why cant the furnace temperature be ramped-up

and cooled-down as quickly as RTP system ?

z A furnace has very large thermal capacity, it needs

very high heating power to ramp-up temperature
rapidly. It is very difficult to ramp up temperature
very fast without large temperature oscillation due to
the temperature overshoot and undershoot .

Ion Implantation: Hardware

z Gas system
z Electrical system
z Vacuum system
z Ion beamline

Implantation Process

Gases and Vapors:

P, B, BF3, PH3, and AsH3

Next Step
Implanter

Select Ion:
B, P, As

Select Ion
Energy

Select Beam
Current

Ion Implanter
Gas Cabin

Ion
Source

Electrical
System

Analyzer
Magnet

Vacuum
Pump

Beam
Line

Electrical
System

Vacuum
Pump

Plasma Flooding
System

Wafers
End Analyzer

Ion Implantation: Gas System

z Special gas deliver system to handle hazardous

gases
z Special training needed to change gases bottles
z Argon is used for purge and beam calibration

Ion Implantation: Electrical System

z High voltage system

z Determine ion energy that controls junction depth
z High voltage system
z Determine ion energy that controls junction depth
z RF system
z Some ion sources use RF to generate ions

Ion Implantation: Vacuum System

z Need high vacuum to accelerate ions and reduce

collision
z MFP >> beamline length
z 10-5 to 10-7 Torr
z Turbo pump and Cryo pump
z Exhaust system

Ion Implantation: Control System

z Ion energy, beam current, and ion species.
z Mechanical parts for loading and unloading
z Wafer movement to get uniform beam scan
z CPU board control boards
z Control boards collect data from the systems,
send it to CPU board to process,
z CPU sends instructions back to the systems
through the control board.

Ion Implantation: Beamline

z Ion source
z Extraction electrode
z Analyzer magnet
z Post acceleration
z Plasma flooding system
z End analyzer

Ion Beam Line

Suppression Electrode

Vacuum
Pump

Ion
Source
Extraction
Electrode

Post Acceleration
Electrode

Plasma Flooding
System
End Analyzer

Analyzer
Magnet

Beam
Line

Vacuum
Pump
Wafers

Ion implanter: Ion Source

z Hot tungsten filament emits thermal electron

z Electrons collide with source gas molecules to
dissociate and ionize
z Ions are extracted out of source chamber and
accelerated to the beamline
z RF and microwave power can also be used to ionize
source gas

Ion Source

Source Gas or Vapor

Arc Power
~ 120 V

Tungsten
Filament

Anti-cathode

+
Filament
Power, 0-5V,
up to 200A

Plasma
Magnetic Field Line

Source
Magnet

RF Ion Source
Dopant Gas

RF Coils
+ RF
-

Plasma

Extraction
Electrode
Ion Beam

Microwave Ion Source

Microwave
Magnetic
Coils

Magnetic
Field Line

ECR
Plasma

Extraction
Electrode

Ion Implantation: Extraction

z Extraction electrode accelerates ions up to 50 keV

z High energy is required for analyzer magnet to
select right ion species.

Extraction Assembly

Suppression Electrode

Extraction Electrode
Top View

Ion Source
Plasma
Ion Beam
+
Extraction
Power, up
to 60 kV

Slit Extracting
Ion Beam

Suppression
Power, up to
10 kV

Terminal Chassis

Ion Implantation: Analyzer Magnet

z Gyro radius of charge particle in magnetic field relate

with B-field and mass/charge ratio
z Used for isotope separation to get enriched U235
z Only ions with right mass/charge ratio can go through
the slit
z Purified the implanting ion beam

Analyzer

Magnetic Field (Point Outward)

Ion Beam

Larger m/q Ratio

Flight Tube
Smaller m/q Ratio

Right m/q Ratio

Ions in BF3 Plasma

Ions
10B
11B
10BF
11BF
F2
10BF
2
11BF
2

Atomic or molecule weight

10
11
29
30
38
48
49

Q&A

10B+

is lighter and can penetrate deeper than 11B+, why

dont use 10B+ in deep junction implantation?

z Only 20% of boron atoms are 10B

z 10B+ ion concentration is only 1/4 of 11B+
z 10B+ beam current is 1/4 of 11B+ beam current
z Quadruple implantation time, lower throughput

Ion Implantation: Post Acceleration

z Increasing (sometimes decreasing) ion energy for

ion to reach the required junction depth
determined by the device
z Electrodes with high DC voltage
z Adjustable vertical vanes control beam current

Ion Implantation: Plasma Flooding System

z Ions cause wafer charging

z Wafer charging can cause non-uniform doping and
arcing defects
z Elections are flooding into ion beam and
neutralized the charge on the wafer
z Argon plasma generated by thermal electrons emit
from hot tungsten filament

Post Acceleration

Suppression Electrode

Acceleration Electrode

Ion Beam

Terminal Chassis

Suppression
Power, up to
10 kV

Post Accel.
Power, up
to 60 kV

Ion Beam Current Control

Fixed Defining Aperture

Ion Beam

Adjustable Vertical Vanes

Bending Ion Trajectory

Neutral Atom Trajectory

Bias Electrode

Ion Trajectory

Wafer

Charge Neutralization System

z Implanted ions charge wafer positively

z Cause wafer charging effect
z Expel positive ion, cause beam blowup and result nonuniform dopant distribution
z Discharge arcing create defects on wafer
z Breakdown gate oxide, low yield
z Need eliminate or minimize charging effect

Charging Effect

Ions trajectory

Wafer

++++

Charge Neutralization System

z Need to provide electrons to neutralize ions

z Plasma flooding system
z Electron gun
z Electron shower are used to

Plasma Flooding System

DC Power

Tungsten
Filament

Ar

Ion
Beam

Filament
Current

Plasma

Electrons
Wafer

Electron Gun

Secondary Electron Target

Electrons

Secondary
Electrons

Ion Beam
Electron
Gun

Thermal
Filament

Wafer

Wafer Handling

z Ion beam diameter: ~25 mm (~1),

z Wafer diameter: 200 mm (8) or larger
z Needs to move beam or wafer, or both, to scan ion
beam across the whole wafer
z Spin wheel
z Spin disk
z Single wafer scan

Spin Wheel

Wafers
Spin arm
Spin rate: to
2400 rpm

Swing period: ~10 sec

Ion beam

Implanted stripe

Spin Disk

Wafers

Ion Beam

Single Wafer Scanning System

Scanning
Ion Beam
Ion Beam
Scanning Electrodes

Wafer
Movement

Ion Implantation: Beam Stop

z absorb the ion beam energy,

z ion beam detector
z beam current, beam energy, and beam shape
measurement
z Water cooled metal plate carries away the heat and
blocks the X-ray radiation

Ion Implantation: End Analyzer

z Faraday charge detector

z Used to calibrate beam current, energy and profile

Beam Stop

Graphite

Top View

Ion Beam
Magnets

Water Cooled
Base Plate

Faraday
Current
Detectors

Ion Implantation: The Process

z CMOS applications
z CMOS ion implantation requirements
z Implantation process evaluations

CMOS Implantation Requirements

0.35 m, 64 Mb

0.25 m, 256 Mb

0.18 m, 1 Gb

Well

P/600/21013

P/400/21013

P/300/11013

Anti-punch through

P/100/51013

As/100/51012

As/50/21012

Threshold

B/10/71012

B/5/31012

B/2/41012

Poly dope

P/30/21015

B/20/21015

B/20/31015

Poly diffusion block

N2/20/31015

Lightly doped drain (LDD)

B/7/51013

B/5/11014

B/2/81013

Halo (45 implant)

As/30/51013

Source/drain contact

B/10/21015

B/7/21015

B/6/21015

Well

B/225/31013

B/200/11013

B/175/11013

Anti-punch through

B/30/21013

B/50/51012

B/45/51012

Threshold

B/10/71012

B/5/31012

B/2/41012

Poly dope

P/30/51015

P/20/21015

As/40/31015

Poly diffusion block

N2/20/31015

Lightly doped drain (LDD)

P/20/51013

P/12/51013

P/5/31013

Halo (45 implant)

Source/drain contact

B/30/31012
As/30/31015

B/20/31012
As/20/31015

B/7/21013
As/15/31015

Implant Step
N-well

P-well

Implantation Process: Well Implantation

z High energy (to MeV), low current (1013/cm2)
P+

Photoresist
N-Well
P-Epi
P-Wafer

Implantation Process: VT Adjust Implantation

Low Energy , Low Current

B+
Photoresist
USG

STI
P-Well
P-Epi

N-Well
P-Wafer

Lightly Doped Drain (LDD) Implantation

z Low energy (10 keV), low current (1013/cm2)

P+
Photoresist
USG

STI
P-Well
P-Epi

N-Well
P-Wafer

Implantation Process: S/D Implantation

z Low energy (20 keV), high current (>1015/cm2)

P+
Photoresist
STI

n+

n+
USG
P-Well
N-Well
P-Epi
P-Wafer

DRAM Ion Implantations

SNC: poly
BL

Contact
implantation
after SNC

BLC: W
Contact
implantation
after SAC

SAC: poly
SAC

P-well implantation

n+ S/D implantation

n-SDE implantation

Ion Implantation Processes

Ion Implantation
Well
Source/Drain
VT Adjust
LDD/SDE

Energy
High energy
Low energy
Low energy
Low energy

Current
low
high
low
mid to high

Process Issues

z Wafer charging
z Particle contamination
z Elemental contamination
z Process evaluation

Wafer Charging

z Break down gate oxide

z Dielectric strength of SiO2: ~10 MV/cm
z 100 oxide breakdown voltage is 10 V
z Gate oxide: 30 to 35 for 0.18 mm device
z Require better charge neutralization

Wafer Charging Monitoring

z Antenna capacitor changing test structure

z The ratio of polysilicon pad area and thin oxide area is
called antenna ratio
z Can be as high as 100,000:1
z The larger antenna ratio, the easier to breakdown the
thin gate oxide

Antenna Ratio

Top View

Side View

Polysilicon
Field Oxide
Silicon Substrate

Gate Oxide

Particle Contamination

z Large particles can block the ion beam especially for

the low energy processes,
z VT adjust, LDD and S/D implantations,
z Cause incomplete dopant junction.
z Harmful to yield

Effect of Particle Contamination

Ion Beam
Dopant in PR
Particle
Photoresist
Screen Oxide

Partially Implanted Junctions

Elemental Contamination

z Co-implantation other elements with intended dopant

z 94Mo++ and 11BF2+, same mass/charge ratio (A/e = 49)
z Mass analyzer cant separate these two
z 94Mo++ causes heavy metal contamination
z Ion source cant use standard stainless steel
z Other materials such as graphite and tantalum are
normally used

Process Evaluation

z SIMS
z Four-point probe
z Thermal wave
z Optical measurement system (OMS)

Secondary Ion Mass Spectrometry (SIMS)

zTime of Flight Secondary Ion mass spectrometry
(TOF-SIMS) can provide both dopant
concentration and dopant depth.
zIt is a slow and destructive measurement process.
zPerformed only in the lab, not in the fab.
zGood for ion implantation process development.

SIMSone beam used to sputter atoms from surface

SIMS Spectrum

1E+23

#10 : 1000eV, 1E15(atoms/cm )

B concentration (atoms/cm )

1E+22

#10

1E+21

1E+20

1E+19

11

1E+18

1E+17

1E+16
0

10

20

30

40

50

Depth (nm)

60

70

80

90

Four-Point Probe

z Perform after anneal

z Measure sheet resistance
z Sheet resistant is a function of dopant concentration
and junction depth
z Commonly used to monitor doping process

Four-Point Probe Measurement

I
V
P1
S1

P2
S2

P3

P4

S3

Dope Region
Substrate
For a typical four-point probe, S1 = S2 = S3 = 1mm,
If current is applied between P1 and P4, Rs = 4.53 V/I
If current is applied between P1 and P3, Rs = 5.75 V/I

Thermal Wave System

z Argon pump laser generates thermal pulses on

wafer surface
z He-Ne probe laser measures DC reflectivity (R) and
reflectivity modulation induced by the pump laser
(DR) at the same spot
z Ratio DR/R is called thermal wave (TW) signal,
z TW signal DR/R related to the crystal damage
z crystal damage is a function of the implant dose

Thermal Wave System

R
R

Pump
Laser

Thermal Waver
Signal Detector

I
t

Probe Laser

R/R: Thermal Wave Signal

Wafer

Thermal Wave System

z Performed immediately after the implant process

z Four-point probe needs anneal first
z Non-destructive, can measure production wafers
z Four-point probe is only good for test wafers
z Low sensitivity at low dosage
z Drift of the TW signal over time
z needs to be taken as soon as the implantation
finished
z Dont have very high measurement accuracy
z Laser heating relax crystal damage

Optical Measurement System (OMS)

z Transparent wafer coated a with a thin layer of
copolymer, which contains energy sensitive dye
z During ion implantation, energetic ions collide with
dye molecules and break them down
z Makes the copolymer becomes more transparent
z The higher the dosage, the higher the transparency
z Photon count change before and after implantation
z Determine dosage of certain ion at certain energy

Optical Measurement System (OME)

Quartz Halogen Lamp
600 nm Filter

Photo Detector
PDI Count

PDI Count

Before Implantation

After Implantation

Carrier Generation

V2~0

V1~0

Laser on

Junction

Si Substrate

Carrier Diffusion

V20

|V1|>|V2|

Laser off

Junction

Si Substrate

Carrier Diffusion

|V1|>|V2|

Laser on

Rs ~ C V1/ V2

Junction

Si Substrate

Optical-electrical Rs measurement
zUse laser pulse to illumination semiconductor
substrate and generate electron-hole pairs.
z The e-h pairs diffusion to sensor electrodes
that could detect voltage change caused by the
diffusion of the carriers.
zThe diffusion rate is related to the sheet
resistance, and the measured voltage ratio,
V1/V2 ratio, is almost linearly related of Rs.

Ion Implantation: Safety

z One of most hazardous process tools in semiconductor

industry
z Chemical
z Electro-magnetic
z Mechanical

Ion Implantation: Chemical Safety

z Most dopant materials are highly toxic, flammable

and explosive.
z Poisonous and explosive: AsH3, PH3, B2H6
z Corrosive: BF3
z Toxic: P, B, As, Sb
z Common sense: get out first, let the trained people
to do the investigation.

Ion Implantation: Electro-magnetic Safety

z High voltage: from facility 208 V to

acceleration electrode up to 50 kV.
z Ground strip, Work with buddy!
z Lock & tag
z Magnetic field: pacemaker, etc.

Ion Implantation: Radiation Safety

z High energy ions cause strong X-ray radiation

z Normally well shield

Ion Implantation: Corrosive by-products

z BF3 as dopant gas

z Fluorine will react with hydrogen to from HF
z Anything in the beamline could have HF
z Double glove needed while wet clean those parts

Ion Implantation: Mechanical Safety

z Moving parts, doors, valves and robots

z Spin wheel
z Hot surface
z

Technology Trends

z Ultra shallow junction (USJ)

z Silicon on insulator (SOI)
z Plasma immersion ion implantation (PIII)

Ultra Shallow Junction (USJ)

z USJ (xj 0.05 mm) for sub-0.1 mm devices

z p-type junction, boron ion beam at extremely low
energy, as low as 0.2 keV
z The requirements for the USJ
z Shallow
z Low sheet resistance
z Low contact resistance
z Minimal impact on channel profile
z Compatible with polysilicon gate

Soft Error

z Electron-hole pairs generated by a-decay

z Electrons from substrate overwrite the messages in
memory capacitors
z Storage capacitors need large capacitance
z Limit further shrinking device feature size
z Silicon-on-insulator (SOI) complete isolate device
from bulk substrate

-particle Induced Electron-hole Pairs

Silicon substrate

+
Electron-hole pair
+
+
+
+
+
+
+
-particle

CMOS on SOI Substrate

n+ source/drain

p+ source/drain

Gate oxide
Polysilicon

p-Si

STI
Buried oxide
Balk Si

n-Si

USG

SOI Formation

z Implanted wafers
z Heavy oxygen ion implantation
z High temperature annealing
z Bonded wafers
z Two wafers
z Grow oxide on one wafer
z High temperature bond wafer bonding
z Polish one wafer until thousand away from SiO2

Oxygen Ion Implantation

Silicon with lattice damage

Oxygen rich silicon
Balk Si

High Temperature Annealing

Single crystal silicon

Silicon dioxide
Balk Si

Plasma Immersion Ion Implantation

z Deep trench capacitor for DRAM

z Deeper and narrower
z Very difficult to heavily dope both sidewall and
bottom by ion implantation
z Plasma immersion ion implantation (PIII)
z An ion implantation process without precise ion
species and ion energy selection

Plasma Doping System

Source RF power

Dopant gas
Vacuum chamber

Ion Implantation
Electrodes

Plasma
Wafer
Bias RF power

Deep Trench Capacitor

Polysilicon

Heavily
doped Si

Dielectric
Layer

Silicon
Substrate

ECR Plasma Immersion System

Microwave
Magnet
Coils
ECR
plasma

Magnetic
field line

Wafer
Bias RF

E-chuck
Helium

Summary Ion Implantation

z Dope semiconductor
z Better doping method than diffusion
z Easy to control junction depth (by ion energy) and
dopant concentration ( by ion current and
implantation time).
z Anisotropic dopant profile.

Summary of Ion Implantation

z Ion source
z Extraction
z Analyzer magnets
z Post acceleration
z Charge neutralization system
z Beam stop

Summary of Ion Implantation

z Well
High energy, low current
z Source/Drain
Low energy, high current
z Vt Adjust
Low energy, low current
z LDD
Low energy, low current