ME25N06(-G)

N-Channel Enhancement MOSFET

GENERAL DESCRIPTION

FEATURES

The ME25N06 is the N-Channel logic enhancement mode power

RDS(ON)62m@VGS=10V

field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.

RDS(ON)86m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability

APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter

PIN

CONFIGURATION
(TO-252)
Top View

e Ordering Information: ME25N06 (Pb-free)

ME25N06-G (Green product)

Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

60

Gate-Source Voltage

VGSS

25

Continuous Drain

TC=25

Current(Tj=150)

TC=70

Pulsed Drain Current

Maximum Power Dissipation

16

ID
IDM

TC=25
TC=70

Operating Junction Temperature

Thermal Resistance-Junction to Case *

65

RJC

25

PD
TJ

13

16
-55 to 150
Steady State

/W

* The device mounted on 1in2 FR4 board with 2 oz copper

Dec,2008-Ver1.0

01

ME25N06(-G)

N-Channel Enhancement MOSFET

Electrical Characteristics (TA =25 Unless Otherwise Specified)

Symbol

Parameter

Limit

Min

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250A

60

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250A

IGSS

Gate Leakage Current

IDSS

Zero Gate Voltage Drain Current

RDS(ON)

Drain-Source On-Resistance

VSD

Diode Forward Voltage

Typ

Max

Unit

STATIC

V
3

VDS=0V, VGS=25V

100

nA

VDS=60V, VGS=0V

VDS=60V, VGS=0V,TJ=55

10

VGS=10V, ID= 15A

52

62

VGS=4.5V, ID= 10A

70

86

IS=15A, VGS=0V

m
V

DYNAMIC
Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Rg

Gate Resistance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

17
VDS=48V, VGS=10V, ID=16A

4.2

nC

5
VDS=0V, VGS=0V, f=1MHz
VDS=30V, VGS=0V,
f=1MHz

VDD=30V, RL =15
ID=1A, VGEN=10V
RG=3

0.6

523
47

pF

14
11
13
34

ns

Notes: a, pulse test: pulse width 300us, duty cycle 2%,Guaranteed by design, not subject to production testing.

Matsuki reserves the right to improve product design, functions and reliability without notice.

Dec,2008-Ver1.0

02

N-Channel Enhancement MOSFET

ME25N06(-G)

Typical Characteristics (TJ =25 Noted)

Dec,2008-Ver1.0

03

N-Channel Enhancement MOSFET

ME25N06(-G)

Typical Characteristics (TJ =25 Noted)

Dec,2008-Ver1.0

04

ME25N06(-G)

N-Channel Enhancement MOSFET

TO-252 Package Outline

SYMBOL
A
A1
B
B1
B2
C
D
D2
D3
H
E
E2
L
L1
L2
L3
P

Dec,2008-Ver1.0

MILLIMETERS (mm)
MIN
MAX
2.00
2.50
0.90
1.30
0.50
0.85
0.50
0.80
0.50
1.00
0.40
0.60
5.20
5.70
6.50
7.30
2.20
3.00
9.50
10.50
6.30
6.80
4.50
5.50
1.30
1.70
0.90
1.70
0.50
1.10
0
0.30
2.00
2.80

05