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Date: Dec./15/2005
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Features:
5mm round standard t-1 3/4 package.
Fast response time.
High photo sensitivity.
Small junction capacitance.
The product itself will remain within RoHS compliant Version.
Descriptions:
The 503PT is a high speed and high sensitive silicon NPN phototransistor in a standard
5 package.
Due to its clear epoxy, the device is matched to visible light and infrared radiation.
Applications:
Infrared applied system.
Optoelectronic automatic control system.
Optoelectronic switch.
Camera.
Printer.
Counters and sorters.
Encoders.
Floppy disk drive.
Video camera, tape and card readers.
Position sensors.
Date: Dec./15/2005
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5 [0.197]
5.85 [0.230]
Package Dimension:
EMITTER
COLLECTOR
POLARITY
5 [0.197]
8.65 [0.341]
0.6 [0.024]
0.5 [0.020]
26.00[1.024] Min.
1 [0.039]
R2.45
0.5 [0.020]
2.54 [0.100]
Part No.
Chip Material
Lens Color
Source Color
LL-503PTC2E-1AD
Silicon
Water Clear
Phototransistor
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25 mm (.010) unless otherwise specified
3. Protruded resin under flange is 1.00 mm (.039) max.
4. Specifications are subject to change without notice.
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Absolute Maximum Ratings at Ta=25
Parameters
Symbol
Rating
Unit
PD
75
mW
Collector-Emitter Voltage
VCEO
30
Emitter-Collector-Voltage
VECO
IC
20
mA
Operating Temperature
TOPR
-40 to +85
Storage Temperature
TSTG
-40 to +100
TSOL
260
Power Dissipation
Collector Current
Condition
BVCEO
30
---
---
IC=100A,
Ee=0mW/cm
BVECO
---
---
IE=100A,
Ee=0mW/cm
VCE(SAT)
---
---
0.40
IC=0.70mA,
Ee=1mW/cm2
ICEO
---
---
100
nA
Ee=0mW/cm,
VCE=20V
IC(ON)
0.70
2.00
---
mA
Ee=1mW/cm,
VCE=5V
TR
---
15
--s
VCE=5V,
IC=1mA,
RL=100
TF
---
15
---
21/2
---
30
---
Deg
---
940
---
nm
0.5
400
---
1100
nm
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Typical Electrical / Optical Characteristics Curves
(25 Ambient Temperature Unless Otherwise Noted)
Collector Current & Irradiance
10
100
Ta=25
Spectral Sensitivity
80
60
40
20
0
100 300 500 700 900 1100 1300
10
10
10
10
VCE =5V
Ta=25
1
-1
-2
0.5
Wavelength p (nm)
160
140 VCE =5V
Ee=1mW/cm2
120
100
80
60
40
20
0
0
10
20 30
40 50 60 70
200
150
100
50
0
-25
25
50
75 85 100
Ambient Temperature ()
-6
14
VCE=20V
12
-7
10
3.0
250
-8
10
-9
10
-10
10
25
50
75
Ambient Temperature ()
1.5
Ambient Temperature ()
10
1.0
Irradiance Ee ( mW/cm 2 )
100
10
Ee=1.50mW/cm 2
Ee=1.25mW/cm 2
Ee=1.00mW/cm 2
Ee=0.75mW/cm 2
2
Ee=0.50mW/cm 2
0
0
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Reliability Test Item And Condition:
The reliability of products shall be satisfied with items listed below:
Confidence level: 90%.
LTPD: 10%.
No.
Item
Test Conditions
Test
Hours/
Cycles
Sample
Sizes
Failure
Judgment
Criteria
Reflow Soldering
TEMP.: 260+5
5secs
6mins
22pcs
0/1
50Cycles
22pcs
0/1
50Cycles
22pcs
Ac/
Re
H: +100 15mins
2
Temperature Cycle
5 mins
L: -40
15mins
H: +100 15mins
3
Thermal Shock
10mins
L: -10
5mins
Ic(ON)L0.8
L: Lower
Specification
Limit
0/1
High Temperature
Storage
TEMP.: +100
1000hrs
22pcs
Lower
Temperature
Storage
TEMP.: -40
1000hrs
22pcs
0/1
DC Operating Life
VCE=5V
1000hrs
22pcs
0/1
High Temperature/
High Humidity
85 / 85% R.H
1000hrs
22pcs
0/1
Date: Dec./15/2005
0/1
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Please read the following notes before using the product:
1. Over-current-proof
Customer must apply resistors for protection, otherwise slight voltage shift will cause big
current change (Burn out will happen).
2. Storage
2.1 Do not open moisture proof bag before the products are ready to use.
2.2 Before opening the package, the phototransistor should be kept at 30 or less and 90%
RH or less.
2.3 The phototransistor should be used within a year.
2.4 After opening the package, the phototransistor should be kept at 30 or less and 70%
RH or less.
2.5 The phototransistor should be used within 168 hours (7 days) after opening the package.
3. Soldering Iron
Each terminal is to go to the tip of soldering iron temperature less than 260 for 5 seconds
within once in less than the soldering iron capacity 25W. Leave two seconds and more
intervals, and do soldering of each terminal. Be careful because the damage of the product is
often started at the time of the hand solder.
4. Repairing
Repair should not be done after the phototransistor had been soldered. When repairing is
unavoidable, a double-head soldering iron should be used (as below figure). It should be
confirmed beforehand whether the characteristics of the phototransistor will or will not be
damaged by repairing.
5. Caution in ESD
Static Electricity and surge damages the phototransistor. It is recommended to use a wrist
band or anti-electrostatic glove when handling the phototransistor. All devices equipment
and machinery must be properly grounded.
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