ENERGY PRACTICE

REPORT SOSE 2014

Electrical characterization of Photovoltaic
modules and generators

Diego Felipe Mendoza Osorio

diegofelipe.mendozaosorio@haw-hamburg.de; luisdaniel.pineresgomez@haw-hamburg.de

Contents
1.

Introduction .......................................................................................................................... 2

2.

Equipment List. .................................................................................................................... 2

3.

Experiment ........................................................................................................................... 2

4.

Results and Discussion ........................................................................................................ 4

4.1

Electrical characteristics of single photovoltaic modules ................................................ 4

4.2

Bypass Diodes. ........................................................................................................... 11

4.3

Effect of Shading on electrical parameters of a single PV module ............................... 15

1. Introduction
The objective of this practice is to study the influence of different shading conditions and
configurations on the electrical behavior of three different types of solar modules:
monocrystalline, polycrystalline and amorphous silicon panels. The m-Si and p-Si
modules are the SOLARA S520M36 and S520P36 respectively, while the ASI-F 32/12 is
the amorphous one. Firstly, the I-V characteristics of the single modules are measured,
and then the modules are covered reproducing different shading conditions.
The practice was conducted in the laboratory, due to the not suitable weather conditions
for measuring irradiance and cell temperature. The light source was provided by lamps
hanging on the ceiling and the modules where arranged on a table in such a way that they
could receive enough and uniform irradiance. Unfortunately, it was not possible to carry
out the generator system measurements, mainly because of the lack of suitable test
conditions (weather).

2. Equipment List.
o

o
o

Peak power measuring device PVPM1000C (PVE)

External security switch
Combined irradiance and temperature sensor (ISET sensor)
Computer with PVPM.disp software
Single photovoltaic modules:
SOLARA S520M36
SOLARA S520P36
Schott Solar ASI-F 32/12
Artificial source of light

3. Experiment
For the STC measurement the next steps were performed sequentially:
1. The modules were mounted on the table and the artificial light source was switched
on.
2. The modules were connected one by one to the security switch (Off state) and the
switch connected to the PVPM1000C equipment (Figure 1).
3. The combined irradiance and temperature sensor was attached to the frame of the
modules in such a way that it could measure enough irradiance.
4. The table was turned around the light source in order to achieve more than 500
W/m2 as effective irradiance.
5. The switch was turned on and the PVPM1000C measuring device acquired the
data from the tests (Figure 2).
2

Figure 1. PVPM1000C measuring device and artificial light source set up.

Figure 2. Combined irradiance and light sensor, crystalline silicon and amorphous modules.

4. Results and Discussion

4.1 Electrical characteristics of single photovoltaic modules
As part of the experiment, several measurements were taken under different conditions
than STC (Table 1) for each module, (1 SOLARA S520M36 (Monocrystaline), 1 SOLARA
S520P36 (Polyscristaline) and 1 SCHOTT SOLAR ASI-F 32/12 (Amorphous)). The PVPM
Analyzer computed values from the given conditions to the STC values by extrapolation.
These values were tabulated in Table 2.

Table 1.Parameter comparison between measurement and manufacturer information

Manufacturer Information
S520M36 S520P36
Isc
Voc
Ipmax
Vpmax
FF
Pmax

A
V
A
V
%
W

8,97
22,63
8,3
17,59
72
145,99

Measurement (extrapolation for

STC)

ASI-F 32/12

8,2
21,9
7,5
17,4
72,67
130

S520M36 S520P36 ASI-F 32/12

2,5
22,8
1,92
16,8
56,59
32,2

3,31
17,7
3,18
14,8
79,9
107,9

3
18,4
2,76
15,7
78,8
116,8

0,51
18,4
0,43
14,8
67
19,1

Table 2.STC and measurement test conditions.

STC

Measurement

S520M36 S520P36 ASI-F 32/12

Tcel

Eff
AM

W/m
-

25
1000
1,5

25
1000
1,5

S520M36 S520P36 ASI-F 32/12

25
1000
1,50

69,9
527
lab

67,7
501
lab

70,4
508
lab

In order to compute STC values by extrapolation, 2 assumptions were established:

-

The Voltage is majorly influenced by the temperature

The Current is majorly influenced by the irradiance.

According to this, STC values could be calculated following the next equations:
() =

1 + (

)
100
4

 1000

() =

() = () ()

Where the irradiance E is computed in Table 2, the Temperature coefficients ,

and values are extracted from the manufacturer data sheet (Table 3).

Table 3. Manufacturer information about temperature coefficients for each module.

Temperature Coefficient
Temperature Coefficient
Temperature Coefficient

Unit
%/K
%/K
%/k

Manufacturer Information
S520M36 S520P36 ASI-F 32/12
-0,036
0,025
-0,045

-0,36
0,028
-0,45

-0,33
0,08
-0,2

As a result, I-V and P-V graphs were drawn for each kind of module in the figure 3, figure
4, and figure 5.

I-V & P-V Characteristic curves S520M36

7

100
90,33; Mpp(STC)
90

6
80
70
60

46,87; Mpp
Measurement

50
3

40

Power (W)

Current (A)

I-V
IV(STC)
P-V

30

20
1
10
0

Eeff=527 W/m

Tcell=69,9 C

0
0

10

15

20

Voltage (V)

Figure 3.Characteristics curves for the module S520M36 (Monocrystalline).

I-V & P-V Characteristic curves S520P36

7

120
100,7; Mpp(STC)

100

Power (W)

Current (A)

80
4
60
3
40

I-V
I-V (STC)
P-V
P-V STC

2
42,69; Mpp
Measurement

20

Eeff= 501 W/m

0

0
0

10

15

20

Tcell= 67,7 C

25

Voltage (V)

Figure 4.Characteristics curves for the module S520P36 (Polycrystalline)

I-V & P-V Characteristic curves ASI-F 32/12

1,2

16
14,49; Mpp (STC)
14

Current (A)

0,8

10

0,6

8
6

0,4

Power (W)

12

V-I
V-I (STC)
P-V
P-V (STC)

4
0,2

4,73; Mpp
Measurement
0

0
0

10

15

20

Eeff= 508 W/m

Tcell= 70,4 C

25

Voltage (V)

Figure 5.Characteristics curves for the module ASI-F 32/12 (Amorphous).

As second criteria for comparison, the fill factor was estimated for every case. The
following equation was used to compute this parameter for each module. These values
are shown in table 4:

Table 4.Fill factor Comparison.

STC

Calculated

STC (extrapolation)
Calculated
S520M36 S520P36 ASI-F S520M36 S520P36 ASI-F
S520M36 S520P36 ASI-F
32/12
32/12
32/12
FF [%]
72
72,66
56
79,79
77,47 50,902
79,79
77,47 67,35

Several graphs were created in order to show the fill factor in a visual way.

Fill Factor S520M36

3,5

50
45

3
40
35
30

25
1,5

20

Power (W)

Current (A)

2,5

I-V
P-V

15

10
0,5

Eeff=527 W/m
Tcell=69,9 C

5
0

0
0

10

12

14

16

18

20

Voltage (V)

Figure 6. Fill factor for measured data on the module S520M36 (Monocrystalline)

Fill Factor STC S520M36

7

100
90

6
80
70

Power (W)

60

50
3

40

I-V
P-V

30

20
1
10
0

0
0

10

15

20

Voltage (V)
Figure 7.Fill factor for extrapolated STC data on the module S520M36 (Monocrystalline)

Fill Factor S520P36

3,5

45
40

35
2,5
30
2

25

1,5

20

Power (W)

Current (A)

Current (A)

I-V
P-V

15
1
10

Eeff= 501 W/m

0,5

Tcell= 67,7 C

0
0

10

15

20

Voltage (V)

Figure 8. Fill factor for measured data on the module S520P36 (Polycrystalline).

Fill Factor S520P36

7

120

100

5
4
60
3

Power (W)

Current (A)

80

40

I-V
P-V

2
20

1
0

0
0

10

15

20

25

Voltage (V)
Figure 9. Fill factor for extrapolated STC data on the module S520P36 (Polycrystalline)

Fill Factor ASI-F 32/12

0,6

5
4,5

0,5

Current (A)

3
0,3

2,5
2

0,2

1,5
1

0,1

0,5
0

Power (W)

3,5

0,4

I-V
P-V
Eeff= 508
W/m
Tcell= 70,4 C

0
0

10

15

20

Voltage (V)

Figure 10. Fill factor for measured data on the module ASI-F 32/12 (Amorphous).

Fill Factor ASI-F 32/12

1,2

16
14

1
12
10
0,6

Power (P)

Current (A)

0,8

I-V
P-V

0,4
4
0,2
2
0

0
0

10

15

20

25

Voltage (V)
Figure 11. Fill factor for extrapolated STC data on the module ASI-F 32/12 (Amorphous).

From the I-V, P-V and Fill factor graphs could be observed that the monocrystalline
module has the most reliable behavior. That means, the performance of the module under
conditions different than STC was similar to the STC behavior. The polycrystalline module
had the higher power output (almost the same as the monocrystalline) but showing a lower
shunt resistance. The amorphous module showed not so good behavior (lower shunt
resistance with respect to the monocrystalline case) and the power output was really
affected by the temperature and the irradiance. These negative aspects are expected from
this kind of modules, and are compensated by a significant reduction of the price of the
module.

10

4.2 Bypass Diodes.

The modules SOLARA monocrystalline-Si and polycrystalline-Si contain bypass diodes in
order to reduce the losses due to shading. The behavior of the I-V curves is recorded and
the influence of different shading configurations is studied. The figure 12 shows some of
the configurations. The aim of this practice is to deduce the wiring of the module (solar
cells connection) and bypass connection.

Figure 12. Partially shading configurations.

11

Monocrystalline SOLARA module shading cases

Shading case 1

m-Si Shading case 1

I-V

P-V

0,25

2,5

0,15

1,5

0,1

0,05

Power (W)

Current (A)

0,2

0,5

Tcell=68,96C
Eeff=527,9W/m2

0
0

10

15

20

Voltage (V)

Figure 13.m-Si module shading on the first upper row

Shading case 2

m-Si Shading case 2

I-V

P-V

0,1

0,6

0,09

Current (A)

0,07

0,4

0,06
0,05

0,3

0,04
0,2

0,03
0,02

0,1

Tcell=69,07C
Eeff=526,80 W/m2

0,01

Power (W)

0,5

0,08

0
0

10

15

20

Voltage (V)

Figure 14. m-Si module shading on the middle row

12

Shading case 3

m-Si shading case 3

I-V

P-V

0,07

0,6

0,06

0,5

0,05
0,04
0,3
0,03

Power (W)

Current (A)

0,4

0,2
0,02

Tcell=69,22C
Eeff=524 W/m2

0,01

0,1

0
0

10

15

20

Voltage (V)
Figure 15. m-Si module shading on the bottom row.

Shading case 4

m-Si Shading case 4

I-V

P-V

0,3

2,5

0,2
1,5
0,15
1
0,1

Tcell=69,6C
Eeff=526,4 W/m2

0,05

Power (W)

Current (A)

0,25

0,5

0
0

10

15

20

Voltage (V)

Figure 16. m-Si module shading on the first row and half of the last column.

13

Shading case 5

m-Si Shading case 5

I-V

P-V

3,5

25

3
20

15

2
1,5

10

Tcell=67,29C
Eeff=514,80 W/m2

Power (W)

Current (A)

2,5

5
0,5
0

0
0

10

15

20

Voltage (V)

Figure 17. m-Si module shading on the first column.

From the preceding figures, it could be noticed that the values for short circuit current,
voltage at the maximum power point, maximum power point and current at maximum
power point are strongly influenced depending on the shading affecting the solar module.
The value for open circuit voltage is reached by every module under the studied conditions
and is nearly the same for all the cases. For the conditions of shading when a row of solar
cells was covered (figures 13 to 15), it is evident that the short circuit current is strongly
affected (decreased), and hence the maximum power point was reduced, the voltage at
maximum power point was shifted to the left or to the right part of the graph depending on
the row shaded. On the other hand, when a column is shaded (figure 17), the voltage and
current at maximum power point are considerably influenced and hence the power at
maximum power point. When both column and rows are covered, then the voltage as well
as the current was reduced (figure 16).
From the analysis, it is possible to conclude that the solar cells are connected in a serial
circuit inside the module, and the bypass diodes are connected across 18 cells each one.
This situation is depicted in figure 18.

14

Figure 18. Bypass Diodes connection in Si-crystalline modules.

4.3 Effect of Shading on electrical parameters of a single PV module

The electrical parameters of the solar modules are sensitive to the shading situation. The
behavior of the I-V characteristics in crystalline Si modules differs from the behavior of
amorphous Si modules. The main objective of this experiment was to analyze the
influence of the percentage of shading (25%, 50%, and 75% in parallel to the long side of
the module and in parallel to the short side of the module respectively) on the voltage,
current and power produced by the panel.

15

Module S520M36 Shading in parallel to the long side

Voltage vs Shading parallel to long side

Voltage (V)

Vmpp

Voc

20
18
16
14
12
10
8
6
4
2
0
0

10

20

30

40

50

60

70

80

70

80

Shading (%)

Figure 19.Voltage vs shading percentage parallel to the long side.

Current vs Shading parallel to long side

Impp

Isc

3,5

Current (A)

3
2,5
2
1,5
1
0,5
0
0

10

20

30

40

50

60

Shading (%)
Figure 20.current vs shading percentage parallel to the long side.

16

Power (W)

Power vs Shading parallel to long side

50
45
40
35
30
25
20
15
10
5
0
0

10

20

30

40

50

60

70

80

Shading (%)
Figure 21.Power vs. shading percentage parallel to the long side.

As shown in the graphs, the electrical properties of the module S520M36 are strongly
influenced by the shading conditions. For example the voltage is reduced up to three times
from 15V to 5V for the condition without shading (0%) up to a value of 75% shading (Figure
19). There is no big difference between the values for current, voltage MPP and power
when the module is shaded partially 25% and 50% parallel to the long side respectively
(Figures 20 and 21). This situation could be explained by the use of bypass diodes, which
reduces the effect of shading on the electrical parameters. The power and current are
very low, nearly cero when the percentage of shading rises to 75%.
Module S520M36 Shading in parallel to the short side

Voltage vs Shading parallel to short side

Voltage (V)

Vmpp

Voc

20
18
16
14
12
10
8
6
4
2
0
0

10

20

30

40

50

60

70

80

Shading (%)

Figure 22. Voltage vs shading percentage parallel to the short side.

17

Current vs Shading parallel to short side

Impp

Isc

3,5
3

Current (A)

2,5
2
1,5
1
0,5
0
0

10

20

30

40

50

60

70

80

Shading (%)

Figure 23. Current vs shading percentage parallel to the short side.

Power vs Shading parallel to short side

50
45
40

Power (W)

35
30
25
20
15
10
5
0
0

10

20

30

40

50

60

70

80

Shading (%)

Figure 24. Power vs shading percentage parallel to the short side.

18

For this case of shading parallel to the modules short side, the values for electrical
properties decay sharply even with a partial shading of 25%.The voltage at MPP is
reduced near to a value of 1V when the module is 75% shaded, being decreased 15 times
starting from an initial voltage of 15V (Figure 22). Analyzing the current behavior, it could
be deduced that its value is completely lowered near to 0 A when the shading is applied
along the short side of the panel, even with a minimum value of 25% shading (Figure 23).
The same effect is reproduced in the power values (Figure 24). The previous situation is
due to the fact that the covered cells instead of providing power to the module, are acting
as consumers, reducing the current, voltage and total power output of the module. In
comparison to the previous shading experiment, covering the cells parallel to the short
side of the panel has a more intensive impact on the electrical parameters of the system
than covering the cells parallel to the long side, therefore inhibiting the proper operation
of the bypass diodes.
From the Figure 25 and 26 could be observed that the shading done to this kind of module
(amorphous) parallel to the short side didnt affect the voltage (neither Open Circuit, nor
Maximum Power Point Voltage) drastically, but it was certainly affected by parallel to the
long side shading.

Shading Parallel to short side

20
18
16

Voltage (V)

14
12
10

Uoc

Voc(Mpp)

6
4
2
0
0

10

20

30

40

50

60

70

80

% of Shading
Figure 25. Effect of parallel shading on the short side on Voltage for the module ASI-F 32/12 (Amorphous).

19

Shading Parallel to long side

20
18
16

Voltage (V)

14
12
10

Uoc

V(mpp)

6
4
2
0
0

10

20

30

40

50

60

70

80

% of Shading
Figure 26. Effect of parallel shading on the long side on Voltage for the module ASI-F 32/12 (Amorphous).

Testing the current against shading percentage, similar results were obtained as it was
with the voltage. From Figures 27 and 28 could be observed that making shading parallel
to the short side showed an almost linear behavior while shading parallel to the long side
showed less current output.

Shading parallel to short side

0,6

Current (A)

0,5
0,4
0,3

Isc
Impp

0,2
0,1
0
0

10

20

30

40

50

60

70

80

% of Shading

Figure 27. Effect of parallel shading on the short side on the Current for the module ASI-F 32/12 (Amorphous).

20

Shading parallel to long side

0,6

Current (A)

0,5
0,4
0,3

Isc
Impp

0,2
0,1
0
0

10

20

30

40

50

60

70

80

% of Shading

Figure 28. Effect of parallel shading on the long side on the Current for the module ASI-F 32/12 (Amorphous).

In the figures 29 and 30, the power-shading data was similar to the current-shading data.
This dependency of the shading effect on the module on the side it is produced could be
explained by the fact that some amorphous modules had the shading-resistant technology
by using cell configurations in order to reduce the effect of shading.

21

Shading parallel to short side

7
6

Power (W)

5
4
3
2
1
0
0

10

20

30

40

50

60

70

80

% of Shading

Figure 29. Effect of parallel shading on the short side on the power for the module ASI-F 32/12 (Amorphous).

Shading parallel to long side

7
6

Power (W)

5
4
3
2
1
0
0

10

20

30

40

50

60

70

80

% of Shading

Figure 30. Effect of parallel shading on the long side on the power for the module ASI-F 32/12 (Amorphous).

From the shading experiment could be observed that it is advantageous to arrange the
modules in order to receive shading parallel to the short side for amorphous technology
modules.
22

23