BDP951 ...

BDP955
NPN Silicon AF Power Transistor

For AF driver and output stages

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BDP952 ... BDP956 (PNP)

2
1

Type

Marking

Pin Configuration

BDP951

BDP 951

1=B

2=C

3=E

4=C

SOT223

BDP953

BDP 953

1=B

2=C

3=E

4=C

SOT223

BDP955

PDP 955

1=B

2=C

3=E

4=C

SOT223

VPS05163

Package

Maximum Ratings
Parameter

Symbol

BDP 951 BDP 953 BDP 955 Unit

Collector-emitter voltage

VCEO

80

100

120

Collector-base voltage

VCBO

100

120

140

Emitter-base voltage

VEBO

DC collector current

IC

Peak collector current

ICM

Base current

IB

200

Peak base current

IBM

500

Total power dissipation, TS = 99 C

Ptot

Junction temperature

Tj

150

Storage temperature

Tstg

A
mA

-65 ... 150

Thermal Resistance
Junction - soldering point 1)

RthJS

17

K/W

1For calculation of R
thJA please refer to Application Note Thermal Resistance

Aug-06-2001

BDP951 ... BDP955

Electrical Characteristics at TA = 25C, unless otherwise specified.

Parameter
Symbol
Values
min.

typ.

Unit
max.

DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0

BDP951

80

BDP953

100

BDP955

120

BDP951

100

BDP953

120

BDP955

140

V(BR)EBO

ICBO

100

nA

ICBO

20

IEBO

100

nA

Collector-base breakdown voltage

IC = 100 A, IB = 0

V(BR)CEO

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 A, IC = 0
Collector cutoff current
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 100 V, IE = 0 , TA = 150 C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)

hFE

IC = 10 mA, VCE = 5 V

25

IC = 500 mA, VCE = 1 V

40

475

IC = 2 A, VCE = 2 V

15

VCEsat

0.8

VBEsat

1.5

fT

100

MHz

Ccb

25

pF

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t =300s, D = 2%

Aug-06-2001

BDP951 ... BDP955

Total power dissipation Ptot = f (TS )

Permissible Pulse Load RthJS = f (tp)

10 3

3.2

K/W
W

10 2

RthJS

P tot

2.4

10 1

1.6

0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0

10 0
1.2

0.8

10 -1

0.4

0
0

20

40

60

80

120 C

100

10 -2 -6
10

150

10

-5

10

-4

10

-3

10

-2

TS

tp

Permissible Pulse Load

DC current gain hFE = f (IC)

Ptotmax / PtotDC = f (tp)

VCE = 2V

10 3

10 3

100C
25C
-50C

D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5

10 2

hFE

Ptotmax / PtotDC

10

10 1

10 0 -6
10

10 2

10 1

10

-5

10

-4

10

-3

10

-2

10

10 0 0
10

tp

10

10

10

mA 10

IC

Aug-06-2001

BDP951 ... BDP955

Collector cutoff current ICBO = f (TA )

Collector-emitter saturation voltage

VCB = 45V

IC = f (VCEsat ), hFE = 10
10 4

10 5
nA

mA

10 4

10 3

100C
25C
-50C

IC

ICBO

10 3

max

10

10 2

10 1
typ

10 1

10 0

10 -1
0

20

40

60

80

100

120 C

10 0
0.0

150

0.2

0.4

0.8

TA

VCEsat

Base-emitter saturation voltage

Collector current I C = f (VBE)

IC = f (VBEsat ), hFE = 10

VCE = 2V

10 4

10 4

mA

mA

10 3

10 3

IC

IC

-50C
25C
100C
10 2

10 2

10 1

10 1

10 0
0.0

0.2

0.4

0.6

0.8

1.0

10 0
0.0

1.3

VBEsat

-50C
25C
100C

0.2

0.4

0.6

0.8

1.0

1.3

VBE

Aug-06-2001

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.