International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.

5, October 2014

AN APPROACH TO DECREASE DIMENSIONS OF DRIFT

HETERO-BOPOLAR TRANSISTORS
E.L.Pankratov1,3 and E.A.Bulaeva1,2
1

Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,

Russia
2
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky
street, Nizhny Novgorod, 603950, Russia
3
Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia, 3 Ankudinovskoe Shosse, Nizhny Novgorod, 603950, Russia

ABSTRACT
In this paper based on recently introduced approach we formulated some recommendations to optimize
manufacture drift bipolar transistor to decrease their dimensions and to decrease local overheats during
functioning. The approach based on manufacture a heterostructure, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to increase homogeneity of distributions of concentrations
of dopants in emitter and collector and specific inhomogenous of concentration of dopant in base and at the
same time to increase sharpness of p-n-junctions, which have been manufactured framework the transistor.
We obtain dependences of optimal annealing time on several parameters. We also introduced an analytical
approach to model nonlinear physical processes (such as mass- and heat transport) in inhomogenous media with time-varying parameters.

KEYWORDS
Drift heterobipolar transistor, analytical approach to model technological process, decreasing of dimensions of transistor

1.INTRODUCTION
In the present time performance of elements of integrated circuits (p-n-junctions, field-effect and
bipolar transistors, ...) and their discrete analogs are intensively increasing [1-14]. To solve the
problem they are using several ways. One of them is manufacturing new materials with higher
speed of charge carriers [1-18]. Another way to increase the performance is elaboration of new
technological processes or modification of existing one [1-14,19,20]. In this paper we introduce
one of approaches of modification of technological to increase performance of bipolar transistor.
To solve our aim we consider hetero structure, which consist of a substrate and three epitaxial
layers (see Fig. 1). One section have been manufactured in every epitaxial layer by using another
materials so as it is presented on Fig. 1. After manufacturing of the section in the first epitaxial
layer the section has been doped by diffusion or ion implantation to produce required type of
conductivity (p or n) in the section. Farther we consider annealing of dopant and/or radiation defects. After that we consider manufacturing of the second and the third epitaxial layers, which
DOI:10.5121/ijcsa.2014.4503

27

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

also including into itself one section in each new epitaxial layer. The sections are also been manufactured by using another materials. Both new sections have been doped by diffusion or ion implantation to produce required type of conductivity (p or n) in the sections. Farther we consider
microwave annealing of dopant and/or radiation defects. Main aim of the paper is analysis of dopand and radiation defects in the considered heterostructure.
Dopant 1

Dopant 2

Epitaxial layers

Dopant 3

Substrate

Fig. 1. Heterostructure, which consist of a substrate and three epitaxial layers with sections, manufactured
by using another materials. View from side

2. Method of solution
To solve our aims we determine spatio-temporal distribution of concentration of dopant.
We determine the required distribution by solving the second Fick's law [1,3-5]
C (x, y, z, t ) C ( x, y, z, t ) C (x, y, z, t )
C (x, y, z, t )
=
DC
+
DC
++
DC

t
x
x

z
z

(1)

with boundary and initial conditions

C ( x, y, z, t )
C ( x, y , z , t )
C ( x, y , z , t )
C ( x, y , z , t )
=0,
= 0,
= 0,
=0,
x

y
y

x
y =0
x = Ly
x =0
x= L
x

C ( x, y , z , t )
C ( x, y , z , t )
=0,
= 0 , C (x,y,z,0)=f (x,y,z).
z
z
z =0
x= L

(2)

Here C(x,y,z,t) is the spatio-temporal distribution of concentration of dopant, T is the temperature

of annealing, D is the dopant diffusion coefficient. Value of dopant diffusion coefficient depends
on properties of materials of the considered hetero structure, speed of heating and cooling of hetero structure (with account Arrhenius law). Dependences of dopant diffusion coefficient could be
approximated by the following relation [3,21]

C ( x, y , z , t )
V ( x, y , z , t )
V 2 ( x, y , z , t )
DC = DL ( x, y, z, T ) 1 +
1
+

,
1
2
P (x, y , z, T )
V*
(V * )2

(3)
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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

where DL (x,y,z,T) is the spatial (due to inhomogeneity of hetero structure) and temperature (due to
Arrhenius law) dependences of diffusion coefficient; P (x,y,z,T) is the limit of solubility of dopant; value of parameter depends on materials of heterostructure and could be integer in the following interval [1,3] [3]; V (x,y,z,t) is the spatio-temporal distribution of concentration of vacancies; V* is the equilibrium distribution of concentration of vacancies. Concentrational dependence of dopant diffusion coefficient has been discussed in details in [3]. It should be noted, that
using diffusion type of doping and radiation damage is absent in the case (i.e. 1= 2= 0). We determine spatio-temporal distributions of concentrations of point radiation defects by solving of the
following system of equations [21,22]

I ( x, y , z , t )
I ( x, y , z , t )
I (x, y , z , t )
=
DI (x, y , z , T )
+
DI ( x, y , z , T )

+
t
x
x
y
y

I ( x, y , z , t )
DI ( x, y, z, T )
k I ,V (x, y , z, T ) I ( x, y, z, t )V ( x, y, z, t )
z
z

k I , I ( x, y , z , T ) I 2 ( x, y , z , t )

(4)

V ( x, y , z , t )
V ( x, y , z , t )
V ( x, y , z , t )
=
DV ( x, y, z, T )
+ y DV (x, y , z, T )
+
t
x
x
y

V ( x, y , z , t )
DV (x, y , z, T )
k I ,V (x, y , z, T ) I (x, y , z , t )V (x, y , z , t )
z
z

kV ,V ( x, y, z , T )V 2 (x, y , z, t )
with initial

(x,y,z,0)=f (x,y,z)

(5a)

and boundary conditions

(x, y , z , t )
( x, y , z , t )
( x, y , z , t )
=0,
= 0,
=0,
x
x
y
x =0
x = Lx
y =0

( x, y , z , t )
( x, y , z , t )
( x, y , z , t )
=0,
=0,
=0.
y

z
z
y= Ly
z =0
z=L

(5b)

Here =I,V; I (x,y,z,t) is the spatio-temporal distribution of concentrations of interstitials; D(x,

y,z,T) are the diffusion coefficients of interstitials and vacancies; terms V2(x,y,z,t) and I2(x,y,z,t)
correspond to generation of divacancies and diinterstitials; kI,V(x,y,z,T), kI,I(x,y,z,T) and kV,V(x,y,
z,T) are the parameters of recombination of point radiation defects and generation appropriate
their complexes, respectively.
We determine spatio-temporal distributions of concentrations of divacancies V (x, y,z,t) and diinterstitials I (x,y,z,t) by solving the following system of equations [21,22]

I (x, y , z , t )
I ( x, y , z , t )
I (x, y , z , t )
=
D I ( x, y , z , T )
+
D I ( x, y , z , T )
+
t
x
x
y
y

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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

I ( x, y , z , t )

2
D I ( x, y , z , T )
+ k I , I ( x, y , z , T ) I ( x, y , z , t )
z
z

k I ( x, y , z , T ) I ( x, y , z , t )

(6)

V ( x, y , z , t )
V ( x, y , z , t )
V ( x, y , z , t )
=
D V ( x, y , z , T )
+
D V ( x, y , z , T )
+
t
x
x
y

y
+

V ( x, y , z , t )

2
D V ( x, y , z , T )
+ k V ,V (x, y , z , T )V ( x, y, z , t )
z
z

kV ( x, y, z , T )V ( x, y , z , t )
with boundary and initial conditions
(x, y , z , t )
x

= 0,
x =0

( x, y , z , t )
z

=0,
z =0

(x, y , z , t )
x

=0,
x = Lx

( x, y, z, t )
z

(x, y , z , t )
y

= 0,

( x, y , z , t )

y =0

=0,
y =Ly

= 0 , I (x,y,z,0)=fI (x,y,z), V (x,y,z,0)=fV (x,y,z). (7)

z =Lz

Here DI(x,y,z,T) and DV(x,y,z,T) are the diffusion coefficients of simplest complexes of radiation defects; kI(x,y,z,T) and kV (x,y,z,T) are the parameters of decay of simplest complexes of radiation defects.
We described distribution of temperature by the second law of Fourier [23]
T ( x, y , z , t )
T (x, y, z , t )
T ( x, y , z , t )
=
( x, y , z , T )
+
( x, y, z , T )
+
t
x
x
y
y

T ( x, y , z , t )
+
( x, y , z , T )
+ p ( x, y , z , t )
z
z

with boundary and initial conditions

c(T )

T ( x, y , z , t )
T ( x, y , z , t )
T (x, y , z , t )
=0,
=0,
= 0,
x
x
y
x =0
x = Lx
y =0

(8)

(9)

T ( x, y , z , t )
T ( x, y , z , t )
T ( x, y , z , t )
= 0,
=0,
= 0 , T (x,y,z,0)=fT (x,y,z),
y

z
z
x = Ly
z =0
x = Lz
where T(x,y,z,t) is the spatio-temporal distribution of temperature; c (T)=cass[1- exp(-T(x,y,z,t)/
Td)] is the heat capacitance (in the most interesting case, when temperature of annealing is approximately equal or larger, than Debay temperature Td, one can assume c (T)cass [23]); is the
heat conduction coefficient, which depends on properties of materials and current temperature of
annealing; temperature dependence of heat conduction coefficient in the most interesting temperature interval could be approximated by the following function (x,y,z,T)=ass(x,y,z) [1+
(Td/T(x,y,z,t))] (see, for example, [23]); p(x,y,z,t) is the volumetric density of heat power, generated in heterostructure during annealing; (x,y,z,T)=(x,y,z,T)/c (T) is the heat diffusivity. First of
all we determine spatio-temporal distribution of temperature. To calculate the distribution of temperature we used recently introduced approach [24-26]. Framework the approach we transform
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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

approximation of heat diffusivity to the following form: ass (x,y,z) =ass(x,y,z)/cas s=0ass[1+T
gT(x,y,z)]. Farther we determine solution of Eq.(8) as the following power series

i =0

j =0

T ( x, y, z , t ) = Ti j Tij (x, y , z , t ) .

(10)

Substitution of the series into Eq.(8) gives us possibility to obtain system of equations for the initial-order approximation of temperature T00(x,y,z,t) and corrections for them Tij(x,y,z,t) (i1, j1).
The equations are presented in the Appendix. Substitution of the series (9) into boundary and initial conditions for temperature gives us possibility to obtain the same conditions for all functions
Tij(x,y,z,t) (i0, j0). The conditions are presented in the Appendix. The equations for the functions Tij(x,y,z,t) (i0, j0) with account boundary and initial conditions have been solved by using
standard approaches [27,28] for the second-order approximation of the temperature T (x,y,z,t) on
the parameters and . The solutions are presented in the Appendix. The second- order is usually
enough good approximation to make qualitative analysis and to obtain some quantitative results
(see, for example, [24-26]). Analytical results give us possibility to make more demonstrative
analysis in comparison with numerical one. To calculate the obtained result with higher exactness
and checking the obtain results by independent approaches we used numerical approaches.
To calculate spatio-temporal distributions of concentrations of point of radiation defects we used
recently introduced approach [24-26] and transform approximations of diffusion coefficients in
the following form: D(x,y,z,T)=D0[1+g(x,y,z,T)], where D0 are the average values of diffusion coefficients, 0< 1, |g(x,y,z,T)|1, =I,V. The same transformations have been used for
approximations of parameters of recombination of point radiation defects and generation of their
complexes: kI,V(x,y,z,T)=k0I,V [1+I,V gI,V(x,y,z,T)], kI,I(x,y,z,T)=k0I,I[1+I,I gI,I(x,y,z,T)] and
kV,V(x,y,z,T) = k0V,V [1+V,V gV,V(x,y,z,T)], where k01,2 are the appropriate average values of these
parameters, 0I,V< 1, 0I,I< 1, 0V,V< 1, |gI,V(x,y,z,T)|1, | gI,I(x,y,z,T)|1, |gV,V(x,y,z,T)|1. Let us
~
introduce the following dimensionless variables: I ( x, y, z , t ) = I ( x, y, z , t ) I * , = x/Lx, = y/Ly,
~
V ( x, y , z , t ) = V ( x, y , z , t ) V * ,
= L2 k 0 I ,V D0 I D0V ,
= L2 k 0 , D0 I D0V ,
=
z/Lz,

= D0 I D0V t L2 . The introduction leads to the following transformation of equations (4) and
conditions (5)
~
~
D0 I
D0 I
I ( , , , )
I ( , , , )

=

[1 + I g I ( , , , T )]
+

D0 I D0V
D0 I D0V

D0 I
I ( , , , )

(
)
{[1 + I g I ( , , , T )]
[
1
+
g
,
,
,
T
]

+
I
I

D0 I D0V

~
I ( , , , )
~
~

[1 + I ,V g I ,V ( , , , T )]I ( , , , )V ( , , , )

~
I [1 + I , I g I , I ( , , , T )] I 2 ( , , , )

~
V ( , , , )
=

(11)

~
D0V

V ( , , , )

[1 + V gV ( , , , T )]
+

D0 I D0V
D0 I D0V

~
D0V

V ( , , , )

[
(
)
]
{[1 + V gV ( , , , T )]

1
g
,
,
,
T
+
+

+
V V

D0 I D0V

D0V

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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
V ( , , , )
~
~
[1 + I ,V g I ,V ( , , , T )]I ( , , , )V ( , , , )

~
I [1 + V ,V gV ,V ( , , , T )]V 2 ( , , , )

~ ( ,, , )
~ ( , , , )
~ ( ,, , )
~ ( , , , )
= 0,
= 0,
=0,
=0,

=0
=1
=0
=1
f ( , , , )
~ ( , , , )
~ ( , , , )
= 0,
= 0 , ~ ( , , , ) =
.

*
=0
=1

(12)

We determine solutions of Eqs.(11) as the following power series (see [24-26])

i =0

j =0

k =0

~ ( , , , ) = i j k ~ijk ( , , , ) .

(13)

Substitution of the series (13) into Eqs. (11) and conditions (12) gives us possibility to obtain eq~
uations for initial-order approximations of concentrations of point defects I000(,,,) and
~
~
~
V000 ( ,,, ) and corrections for them I ijk (,,,) and Vijk ( , , , ) , i 1, j 1, k 1. The equations and conditions for them are presented in the Appendix. The equations have been solved by
standard approaches (see, for example Fourier approach, [27,28]). The equations are presented in
the Appendix.
Farther we determine spatio-temporal distributions of concentrations of complexes of radiation
defects. First of all we transform approximations of diffusion coefficients into the following form:
D(x,y,z,T)=D0[1+g(x,y,z,T)], where D0 are the average values of diffusion coefficients.
In this situation Eqs.(6) will be transformed to the following form

I ( x, y , z , t )

I ( x, y, z , t )
= D0 I
[1 + I g I ( x, y , z , T )]
+
[1 + I g I ( x, y, z , T )]
t
x
x
y

I ( x, y , z , t )
I ( x, y , z , t )

D 0 I + D 0 I
[1 + I g I ( x, y, z , T )]
+
y
z
z

[1 + I g I (x, y , z, T )] + k I , I (x, y , z, T ) I 2 ( x, y , z, t ) k I (x, y , z, T ) I ( x, y , z, t )

V (x, y, z, t )
V (x, y, z, t )

= D0V
[1 + V g V (x, y, z, T )]
+
[1 + V g V (x, y, z, T )]
x
t
x
y

V ( x, y , z , t )
V ( x, y , z , t )

D 0 V + D 0 V
[1 + V g V (x, y , z , T )]
+
y
z
z

[1 + V g V ( x, y, z , T )] + kV ,V ( x, y, z, T ) V 2 (x, y, z, t ) kV (x, y, z , T )V ( x, y, z , t ) .

Farther we determine solutions of the above equations as the following power series

(x, y , z , t ) = i i ( x, y , z, t ) .

(11)

i =0

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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Substitution of the series (14) into Eqs. (6) and appropriate boundary and initial conditions gives
us possibility to obtain equations for initial-order approximations of concentrations of complexes
of radiation defects 0(x,y,z,t) and corrections for them i(x,y,z,t) (i 1) and appropriate conditions for all functions i(x,y,z,t) (i 0). The equations and conditions are presented in the Appendix. The obtained equations have been solved by standard approaches (see, for example, [27,28])
with account boundary and initial conditions. The solutions are presented in the Appendix.
We calculate spatio-temporal distribution of dopant concentration by using the same approach,
which have been used for calculation spatio-temporal distribution of concentrations of radiation
defects. In this situation we transform approximation of dopant diffusion coefficient to the following form: DL(x,y,z,T)=D0L[1+LgL(x,y,z,T)], where D0L is the average value of dopant diffusion
coefficient, 0L< 1, |gL(x,y,z,T)|1. Farther we determine solution of Eq.(1) in the following form

i =0

j =1

C (x, y , z , t ) = Li j Cij ( x, y, z , t ) .

Substitution of the series into Eq.(1) and conditions (2) gives us possibility to obtain equation for
initial-order approximation of the concentration of dopant C00(x,y,z,t) and corrections for them
Cij(x,y,z,t) (i 1, j 1) and boundary and initial conditions for them. The equations and conditions
are presented in the Appendix. The solutions have been calculated by standard approaches (see,
for example, [27,28]). The solutions are presented in the Appendix.
Analysis of spatio-temporal distributions of concentrations of dopant and radiation defects have
been done analytically by using the second-order approximations on all parameters, which are
used in appropriate series. The approximation is usually enough good approximation to make qualitative analysis and to obtain some quantitative results. Results of analytical calculations have
been checked with comparison with numerical one.

3.Discussion
In this section we analyzed redistribution of dopant and radiation defects by using relations, calculated in the previous section. Typical distributions of concentrations of dopant near interface
between materials of hetero structure are presented on Figs. 2 and 3 for diffusion and ion types of
doping, respectively. The distributions have been calculated for the case, when value of dopant
diffusion coefficient in doped area is larger, than value of dopant diffusion coefficient in nearest
areas. The figures show, that presents of interface between materials gives us possibility to increase sharpness of p-n-junctions, which included into the considered heterobipolar transistor. At
the same time homogeneity of distribution of concentration of dopant increases. Increasing of
sharpness of p-n-junctions gives us possibility to decrease their switching time. Increasing of homogeneity of distribution of concentration of dopant gives us possibility to decrease value of local overheats during functioning of the p-n-junctions or to decrease dimensions of p-n-junctions
with fixed maximal value of the overheats. To accelerate transport of charge carriers it is attracted
an interest inhomogenous distribution of dopant in base. In this case it is electrical field has been
generated in the base. This electrical field gives us possibility to accelerate transport of charge
carriers in base of transistors. To manufacture in homogenous distribution of dopant in base it is
practicably to dope required area (section) of the first (nearest to the substrate) epitaxial layer.
After that it is practicably to anneal dopant and/or radiation defects. Farther they are attracted an
interest the following steps: (i) manufacturing of the second epitaxial layer with section, manufactured by using another materials; (ii) doping the section of the second epitaxial layer by diffusion
or ion implantation; (iii) manufacturing of the third epitaxial layer with section, manufactured by
using another materials; (iv) doping the section of the third epitaxial layer by diffusion or ion im33

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

plantation. After that we consider microwave annealing of dopant and/or radiation defects. Advantage of the approach of annealing is formation of inhomogenous distribution of temperature.
In this situation it is practicably to choose parameters of annealing so, that thickness of scin-layer
became larger, than thickness of the third (external) epitaxial layer and smaller, than total of
thickness of the third and the second epitaxial layers. In this case dopant diffusion in nearest to
the substrate side became slower, than in farther side. This is a reason to inhomogeneity of distribution of concentration of dopant in depth of hetero structure. After finishing of manufacturing of
bipolar transistor the section of the average epitaxial layer with inhomogenous distribution of
concentration of dopant assumes function of base.

Fig. 2. Distributions of concentrations of infused dopant in hetero structure from Fig. 1 in direction, which is perpendicular to interface between layers of heterostructure. Increasing of number
of curves corresponds to increasing of difference between values of dopant diffusion coefficient
in layers of heterostructure. The curves have been calculated under condition, when dopant diffusion coefficient in doped layer is larger, than in nearest layer.
2.0
1

C(x,)

1.5

2
3

1.0
Epitaxial layer

0.5

Substrate

0.0
0

L/4

L/2
x

3L/4

Fig. 3. Spatial distributions of implanted dopant concentration after annealing with continuous
= 0.0048(Lx2+Ly2+Lz2)/D0 (curves 1 and 3) and = 0.0057(Lx2+Ly2+Lz2)/ D0 (curves 2 and 4).
Curves 1 and 2 are calculated distributions of dopant concentration in homogenous structure.
Curves 3 and 4 are calculated distributions of dopant concentration in hetero structure under condition, when dopant diffusion coefficient in doped layer is larger, than in nearest layer.
34

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Using of the considered approach to manufacture of transistors leads to necessity of optimization

of annealing time. To optimize the annealing time we used recently introduced criterion
[24,26,29-33]. Framework the approach we approximate real distributions of concentration of
dopant by step-wise function. Farther we determine the required optimal values of annealing time
by minimization of the following mean- squared error
U=

1 Lx L y Lz
[C ( x, y , z , ) (x, y , z )]d z d y d x ,
Lx L y Lz 0 0 0

(15)

where (x) is the approximation function, is the required value of annealing time.
0.5

D0 L

-2

0.4

0.3
3

0.2

1
0.1
0.0
0.0

0.1

0.2
0.3
a/L, , ,

0.4

0.5

Fig.4. Dependences of dimensionless optimal annealing time for doping by diffusion, which have
been obtained by minimization of mean-squared error, on several parameters. Curve 1 is the dependence of dimensionless optimal annealing time on the relation a/L and = = 0 for equal to
each other values of dopant diffusion coefficient in all parts of hetero structure. Curve 2 is the
dependence of dimensionless optimal annealing time on value of parameter for a/L=1/2 and =
= 0. Curve 3 is the dependence of dimensionless optimal annealing time on value of parameter
for a/L=1/2 and = = 0. Curve 4 is the dependence of dimensionless optimal annealing time on
value of parameter for a/L=1/2 and = = 0
0.12
2
0.08
D0 L

-2

0.04

0.00
0.0

0.1

0.2
0.3
a/L, , ,

0.4

0.5

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International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Fig.5. Dependences of dimensionless optimal annealing time for doping by ion implantation,
which have been obtained by minimization of mean-squared error, on several parameters. Curve 1
is the dependence of dimensionless optimal annealing time on the relation a/L and = = 0 for
equal to each other values of dopant diffusion coefficient in all parts of hetero structure. Curve 2
is the dependence of dimensionless optimal annealing time on value of parameter for a/L=1/2
and = = 0. Curve 3 is the dependence of dimensionless optimal annealing time on value of
parameter for a/L=1/2 and = = 0. Curve 4 is the dependence of dimensionless optimal annealing time on value of parameter for a/L=1/2 and = = 0
Dependences of optimal values of annealing time are presented in Fig. 4 for diffusion type of
doping. Using ion implantation leads to necessity of annealing of radiation defects. In the ideal
case after finishing of annealing of radiation defects dopant achieves interface between materials
of hetero structure. If the dopant did not achieves the interface during the annealing, it is practicably to use additional annealing of dopant. Dependences of optimal values of additional annealing
time are presented in Fig. 5. Optimal value of time of additional annealing of implanted dopant is
smaller, than in optimal value of infused dopant. Reason of this difference is necessity of annealing of radiation defects.

4. CONCLUSIONS
In this paper we introduce an approach to manufacture a heterobipolar transistor with inhomogenous doping of base. At the same time the introduced approach to manufacture of bipolar transistors gives us possibility to increase their compactness and to increase sharpness of p-njunctions, which included into the transistor. The approach based on manufacturing of a heterostructure with special construction, doping of special areas of the hetero structure and optimization of annealing of dopant and/or radiation defects.

ACKNOWLEDGEMENTS
This work is supported by the contract 11.G34.31.0066 of the Russian Federation Government,
grant of Scientific School of Russia, the agreement of August 27, 2013 02..49.21.0003 between The Ministry of education and science of the Russian Federation and Lobachevsky State
University of Nizhni Novgorod and educational fellowship for scientific research of Nizhny Novgorod State University of Architecture and Civil Engineering.

APPENDIX
Equations for the functions Tij(x,y,z,t) (i0, j0) have been obtained by substitution the power series (10) in the equation (8) and equating terms with equal powers of parameters T and . The
equations could be written as
2T (x, y , z , t ) 2T00 ( x, y , z, t ) 2T00 (x, y , z , t ) p ( x, y, z , t )
T00 (x, y , z, t )
= 0 ass 00 2
+
+
+
t
x
y2
z2
ass

2T (x, y , z , t ) 2Ti 0 (x, y , z , t ) 2Ti 0 (x, y , z , t )

Ti 0 ( x, y , z , t )
= 0 ass i 0 2
+
+
+ 0 ass
t
x
y2
z2

36

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

2Ti 10 (x, y , z , t )
2 Ti 10 ( x, y, z , t )
g T ( x, y , z , T )
+ g T ( x, y , z , T )
+
2
x
y2

Ti 10 (x, y, z, t )

g T (x, y, z, T )
, i 1
z
z

2T (x, y , z , t ) 2T01 ( x, y , z , t ) 2T01 ( x, y , z , t )

0 ass Td
T01 (x, y , z , t )
= 0 ass 01 2
+
+

+ (
2
2
t
x
y
z

T00 x, y, z , t )
2
2T (x, y, z, t ) 2T00 (x, y, z, t ) 2T00 (x, y, z, t )
0 assTd T00 (x, y, z, t )
00 2
+

+
+1
x
y2
z2
x

T00 (x, y, z, t )
2

T (x, y , z , t ) T00 (x, y , z, t )

+ 00
+

y
z

2T (x, y, z, t ) 2T02 (x, y, z, t ) 2T02 (x, y, z, t )

T02 ( x, y, z, t )
0assTd
= 0 ass 02 2
+
+
+

t
x
y2
z2

T00 (x, y, z, t )

2T (x, y, z, t ) 2T01 (x, y, z, t ) 2T01 (x, y, z, t )

0assTd T00 (x, y, z, t ) T01 (x, y, z, t )
+
+
01 2

+1
x
y2
z2
x
x

T00 (x, y, z, t )
T00 ( x, y, z, t ) T01 ( x, y, z, t ) T00 ( x, y, z , t ) T01 ( x, y, z, t )
+

y
y
z
z

T (x, y, z, t )
T11 ( x, y, z, t )
2T11 ( x, y, z, t )
2 T00 (x, y, z, t ) 2 T00 (x, y, z, t )
= 0ass
+ 0ass 01
+

gT (x, y, z, T )
2
T00 ( x, y, z, t )
t
x
x2
y2
g T (x, y, z , T ) +

T00 (x, y, z, t )
T01 (x, y, z, t )


+
g T (x, y, z , T )
+ 0ass g T (x, y, z, T )
z
z
x
x

2T01 (x, y, z, t )
2T01 (x, y, z, t )
2T01 (x, y, z, t )
+ [1 + g T (x, y, z, T )]
+ [1 + g T (x, y, z, T )]
+
2
2
x
y
z2

T ( x, y, z, t ) 2 T00 ( x, y, z , t ) T10 ( x, y, z, t ) 2 T00 ( x, y, z , t ) T10 ( x, y, z, t )

+ 0 ass Td 10+1
+ +1
+ +1

x2
T00 (x, y, z , t )
y2
T00 (x, y, z , t )
T00 ( x, y, z , t )

2T00 ( x, y , z, t )
0 ass Td 2T10 (x, y , z , t ) 2T10 ( x, y, z , t ) 2 T10 (x, y , z, t )
+
+
+

z2
x2
y2
z2
T00 (x, y , z , t )

2T10 ( x, y, z, t )
T00 ( x, y, z, t )
+ g T ( x, y , z , T )
+
g T ( x, y , z , T )
+ g T ( x, y , z , T )
2
x
z
z

2T10 ( x, y, z, t ) T10 (x, y , z , t ) T00 ( x, y, z, t ) T10 ( x, y, z , t )

+

T00 (x, y , z , t )
y2
x
x
y

0 ass Td

T00 (x, y , z , t ) T10 (x, y , z , t ) T00 ( x, y , z, t ) 0 ass Td

g ( x, y , z , T )
+
0 ass Td T+1

+1
y
z
z
T00 (x, y , z , t )
T00 ( x, y, z, t )
37

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

T ( x, y , z , t ) 2 T (x, y , z , t ) 2 T (x, y , z , t ) 2
00
00
00
+
+
.

y
z

Conditions for the functions Tij(x,y,z,t) (i0, j0) have been obtained by the same procedure as
appropriate equations and could be written as
Tij (x, y, z , t )
x

Tij (x, y , z , t )

= 0,

x =0

Tij (x, y , z, t )
z

= 0,

=0,

x = Lx

Tij ( x, y, z , t )
z

z =0

Tij (x, y, z, t )

=0,

Tij ( x, y, z, t )
y

y =0

= 0,
x = Ly

= 0 , T00(x,y,z,0)=fT(x,y,z), Tij(x,y,z,0)=0, i 1, j 1.
x = Lz

Solutions of the equations for the functions Tij(x,y,z,t) (i0, j0) with account boundary and initial
conditions have been obtained by standard Fourier approach. By using the approach one can obtain the functions Tij(x,y,z,t) in the following form
T00 (x, y , z , t ) =
Ly

Lz

Lx L y Lz
Lx

1
2
c n (x ) c n ( y ) c n (z ) e nT (t ) c n (u )
f T (u , v, w) d w d v d u +
Lx L y L z 0 0 0
L x L y L z n =1
0

c n (v ) c n (w) f T (u , v, w) d w d v d u +

t L x L y L z p (u , v , w, )
1
2
d wd vd u d +

Lx L y Lz 0 0 0 0
Lx L y Lz
ass

Lx

Ly

Lz

n =1

c n ( x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) c n (u ) c n (v ) c n (w)

p (u , v, w, )

ass

d wd v d u d ,

1
1
1
where cn() = cos ( n/L), enT (t ) = exp 2 n 2 0 ass t 2 + 2 + 2 ;

Lx L y Lz

Ti 0 ( x, y, z, t ) = 2

0 ass
2
x

L L y Lz

Lx

Ly

Lz

n =1

n c n ( x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) s n (u ) c n (v ) c n (w) g T (u , v, w, T )

Ly
Lx
t
Ti 10 (u , v, w, )
0 ass
d wd vd u d + 2
n c n (x ) c n ( y ) c n ( z ) e nT (t ) e nT ( ) c n (u ) s n (v )
2
u
L x L y L z n =1
0
0
0
Lz

c n (w) g T (u , v, w, T )
0

Ti 10 (u , v, w, )
0 ass
d wd vd u d + 2
n c n (x ) c n ( y ) c n (z )
v
L x L y L2z n =1

Lx

Ly

Lz

e nT (t ) e nT ( ) c n (u ) c n (v ) s n (w) g T (u , v, w, T )

Ti 10 (u , v, w, )
d w d v d u d , i 1,
w

where sn() = sin ( n /L);

T01 ( x, y, z , t ) = 0 ass

Ly
Lx
Lz
t
2 Td
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
c
x
c
y
c
z
e
t
e

s
u
c
v

c n (w)
n
n
n
nT
nT
n
n
L2x L y Lz n =1
0
0
0
0

Lx
t
2T00 (u , v, w, ) d w d v d u d
2 Td
(
)
(
)
(
)
(
)
(
)
+

c
x
c
y
c
z
e
t
e

cn (u )
0
ass
n
n
n
nT
nT
u2
T00 (u , v, w, )
Lx L2y Lz n =1
0
0

38

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Ly

Lz

n sn (v ) cn (w)

2 Td
2T00 (u , v, w, ) d w d v d u d
+ 0 ass
cn ( x )cn ( y )c n ( z )enT (t )

2
v
T00 (u , v, w, )
Lx L y L2z n =1

Lx

Ly

Lz

n enT ( ) cn (u ) cn (v ) s n (w)

2T00 (u , v, w, ) d w d v d u d
0 ass
2 Td
cn (x )
2

u
T00 (u , v, w, )
Lx L y Lz n =1
2

T (u , v, w, ) d w d v d u d
c n ( y )cn (z )enT (t ) enT ( ) cn (u ) cn (v ) cn (w) 00

+1
u
0
0
0
0

T00 (u , v, w, )
Ly

Lx

Lz

T (u , v, w, )
2
cn (x ) cn ( y )cn ( z )enT (t ) enT ( ) cn (u ) c n (v ) cn (w) 00

n
=1
Lx L y L z
v
0
0
0
0

0 ass

Td

Ly

Lx

Lz

Ly
Lx
t
0 ass
d wd v d u d
2 Td
cn ( x )cn ( y )c n ( z ) enT (t ) enT ( ) cn (u ) cn (v )
+1
T00 (u , v, w, )
Lx L y Lz n =1
0
0
0

T (u , v, w, ) d w d v d u d
cn (w) 00
;
+1 (
w
0

T00 u , v, w, )
Lz

T02 (x, y , z, t ) = 0 ass

Ly
Lx
Lz
t
2 Td
(
)
(
)
(
)
(
)
(
)
(
)
(
)
n
c
x
c
y
c
z
e
t
e

s
u
c
v

c n (w)
n
n
n
nT
nT
n
n
L2x L y Lz n =1
0
0
0
0

Lx
t
2T01 (u, v, w, ) d w d v d u d
2 Td
+

n
c
(
x
)
c
(
y
)
c
(
z
)
e
(
t
)
e
(

cn (u )
ass
n
n
n
nT
nT
0
u2
T00 (u, v, w, )
Lx L2y Lz n=1
0
0

Ly

Lz

s n (v ) cn (w)

2T01 (u , v, w, ) d w d v d u d
2 Td

+
n c n ( x )c n ( y ) cn ( z )enT (t )
ass
0
v2
T00 (u , v, w, )
Lx L y L2z n =1

Lx

Ly

Lz

enT ( ) cn (u ) cn (v ) s n (w)

2T01 (u , v, w, ) d w d v d u d

2 Td 2 0 ass cn ( x )
2

n
w
T00 (u , v, w, )
Lx L y Lz =1

Lx

Ly

Lz

c n ( y ) enT ( ) cn (u ) c n (v ) cn (w)
c n ( z ) enT (t ) 2Td

0 ass
Lx L2y Lz

T00 (u , v, w, ) T01 (u , v, w, ) d w d v d u d

u
u
T00 +1 (u , v, w, )

Lx

Ly

Lz

n =1

cn ( x )cn ( y )cn ( z )enT (t ) enT ( ) c n (u ) c n (v ) cn (w)

T00 (u , v, w, ) T01 (u , v, w, ) d w d v d u d
0 ass
2
cn ( x )c n ( y )c n ( z )enT (t )
+1
v
v
T00 (u , v, w, )
Lx L y L2z n=1
t

Lx

Ly

Lz

Td enT ( ) cn (u ) cn (v ) cn (w)

T11 (x, y , z , t ) =

T00 (u , v, w, ) T01 (u, v, w, ) d w d v d u d

;
w
w
T00 +1 (u , v, w, )

Ly
Lx
Lz
t
2 0 ass
c n ( x )cn ( y )cn (z )enT (t ) enT ( ) cn (u ) cn (v ) {g T (u , v, w, T )
Lx L y Lz n =1
0
0
0
0

2 T00 (u , v, w, )
2 T00 (u , v, w, )
T00 (u , v, w, )
+ g T (u , v, w, T )
+
g T (w)
c n (w)
2
2
w
v
w
w

Ly
Lx
t
T01 (u , v, w, )
2 0 ass
d wd vd u d +
c n (x )c n ( y )cn (z )enT (t ) enT ( ) cn (u ) cn (v )
T00 (u , v, w, )
Lx L y L z n =1
0
0
0

39

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014
Lz 2
T (u , v, w, )
2T (u , v, w, )
2T (u , v, w, )
01 2
+ [1 + g T (u , v, w, T )] 01 2
+ [1 + g T (u , v, w, T )] 01 2
+
u
u
v
0

T01 (u , v, w, )
0 ass Td

cn (x )cn ( y )cn ( z )
g T (u , v, w, T )
c n (w ) d w d v d u d + 2
w
w
L x L y Lz n =1

Ly
Lx
Lz
t
T (u , v, w, ) 2T00 (u , v, w, ) T10 (u , v, w, )
enT (t ) enT ( ) c n (u ) c n (v ) cn (w) 10+1
+ +1

u2
T00 (u , v, w, )
0
0
0
0
T00 (u , v, w, )

2T00 (u , v, w, ) T10 (u , v, w, ) 2T00 (u , v, w, )

+ +1
d w d v d u d + 2n=1 cn ( x ) cn ( y )cn ( z )
2
2
v
T00 (u , v, w, )
w

Ly
Lx
Lz
t
2T (u , v, w, ) 2T10 (u , v, w, ) 2T10 (u , v, w, )
enT ( ) cn (u ) cn (v ) cn (w) 10 2
+
+

u
v2
w2
0
0
0
0

enT (t )

Ly
Lx
t
T
0 assTd d w d v d u d
+ 2 0 ass d cn (x )cn ( y )cn (z )enT (t ) enT ( ) cn (u ) cn (v )

Lx L y Lz T00 (u, v, w, )
Lx L y Lz n =1
0
0
0

Lz

2 T00 (u , v, w, )
T00 (u , v, w, )
cn (w) g T (u , v, w, T )
+
g T (u , v, w, T )
+ g T (u , v, w, T )
2

w
w
0

Lx
t
0 assTd
2 T00 (u , v, w, ) d w d v d u d
(
)
(
)
(
)
(
)
(
)

c
x
c
y
c
z
e
t
e

c n (u )

n
n
n
nT
nT

v2
Lx L y Lz n=1
0
0
T00 (u , v, w, )

Ly
Lz
T (u , v, w, ) T00 (u, v, w, ) T10 (u , v, w, ) T00 (u , v, w, ) T10 (u , v, w, )
cn (v ) 10
+
+

u
u
v
v
w
0
0

Lx
t
T00 (u , v, w, )
T
d wd vd u d
2 0 ass d cn (x )cn ( y )c n ( z ) enT (t ) enT ( ) cn (u )
c n (w) +1
w
T00 (u , v, w, )
Lx L y Lz n =1
0
0

Ly
T (u, v, w, ) 2 T (u, v, w, ) 2 T (u, v, w, ) 2 d w d v d u d
Lz
00
00
.
cn (v ) cn (w) 00
+
+
+1

v
w
0
0

T00 (u, v, w, )
~
~
Equations for the functions I ijk ( , , , ) and Vijk ( , , , ) , i 0, j 0, k 0 and conditions for

them have been obtain by the same procedure as for the functions Tij(x,y,z,t)
~
~
~
~
I 000 ( , , , )
D0 I 2 I 000 ( , , , )
D0 I 2 I 000 ( , , , )
D0 I 2 I 000 ( , , , )
=
+
+

D0V
2
D0V
2
D0V
2
~
V000 ( , , , )
=

~
D0V 2V000 ( , , , )
+
D0 I
2

~
D0V 2V000 ( , , , )
+
D0 I
2

~
D0V 2V000 ( , , , )
;
D0 I
2

~
I i 00 ( , )
=

D0 I
D0V

~
~
~
D0 I 2 I i 00 ( , , , ) 2 I i 00 ( , , , ) 2 I i 00 ( , , , )
+
+

+
D0V
2
2
2

~
~
I i 100 ( , , , )
D0 I
I i 100 ( , , , )

(
)
(
)
g
,
,
,
T
+
g
,
,
,
T

I
+

D0V

40

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
D0 I
I i 100 ( , , , )
+
g I ( , , , T )
, i 1,
D0V

~
~
~
~
Vi 00 ( , )
D0V 2Vi 00 ( , , , ) 2Vi 00 ( , , , ) 2Vi 00 ( , , , )
=
+
+

2
2
2
D0 I

~
~
Vi 100 ( , , , )
Vi 100 ( , , , )
D0V
D0V
+
+
g V ( , , , T )
+
g V ( , , , T )

D0 I
D0 I

~
I 010 ( , , , )
=

~
D0V
Vi 100 ( , , , )
+
gV ( , , , T )
, i 1;
D0 I

2~
2~
2~
D0 I I 010 ( , , , ) I 010 ( , , , ) I 010 ( , , , )
+
+

D0V
2
2
2

~
~
[1 + I ,V g I ,V ( , , , T )] I 000 ( , , , ) V000 ( , , , )

~
V010 ( , , , )
=

D0V
D0 I

~
I 020 ( , , , )
=

D0 I
D0V

2V~010 ( , , , ) 2V~010 ( , , , ) 2V~010 ( , , , )

+
+

2
2
2

~
~
[1 + I ,V g I ,V ( , , , T )] I 000 ( , , , )V000 ( , , , ) ;

2 I~020 ( , , , ) 2 I~020 ( , , , ) 2 I~020 ( , , , )

+
+

2
2
2

~
~
~
~
[1 + I ,V g I ,V ( , , , T )] I 010 ( , , , ) V000 ( , , , ) + I 000 ( , , , )V010 ( , , , )

~
V020 ( , , , )
=

2V~020 ( , , , ) 2V~020 ( , , , ) 2V~020 ( , , , )

+
+

2
2
2

~
~
~
~
[1 + I ,V g I ,V ( , , , T )] I 010 ( , , , )V000 ( , , , ) + I 000 ( , , , )V010 ( , , , ) ;
D0 I
D0V

~
I 001 ( , , , )
=

D0 I
D0V

2 I~001 ( , , , ) 2 I~001 ( , , , ) 2 I~001 ( , , , )

+
+

2
2
2

~2
[1 + I , I g I , I ( , , , T )] I 000
( , , , )

~
V001 ( , , , )
=

D0V
D0 I

2V~001 ( , , , ) 2V~001 ( , , , ) 2V~001 ( , , , )

+
+

2
2
2

~2
[1 + I , I g I , I ( , , , T )] V000
( , , , ) ;

~
I 110 ( , , , )
=

2 I~110 ( , , , ) 2 I~110 ( , , , ) 2 ~
I110 ( , , , )
+
+
+

2
2

~
~
D0 I
I 010 ( , , , )
I 010 ( , , , )
(
)
(
)

+
g
,
,
,
T
+
g
,
,
,
T

I
+
D0V

D0 I
D0V

41

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
I 010 ( , , , )

~
~
g I ( , , , T )
[1 + I , I g I , I ( , , , T )] I 100 ( , , , ) V000 ( , , , ) +

~
~
+ I 000 ( , , , ) V100 ( , , , )
~
~
~
~
D0V 2V110 ( , , , ) 2V110 ( , , , ) 2V110 ( , , , )
V110 ( , , , )
=
+
+

+
D0 I

2
2
2

~
~
V010 ( , , , )
D0V
V010 ( , , , )
+

g V ( , , , T )
+
gV ( , , , T )
+
D0 I

V010 ( , , , )
~
(
)
g
,
,
,
T

V
[1 + V ,V gV ,V ( , , , T )] V100 ( , , , )

~
~
~
I 000 ( , , , ) + V000 ( , , , ) I100 ( , , , ) ;
~
~
~
~
I 002 ( , , , )
D0 I 2 I 002 ( , , , ) 2 I 002 ( , , , ) 2 I 002 ( , , , )
=
+
+

D0V

2
2
2

~
~
[1 + I , I g I , I ( , , , T )]I 001 ( , , , ) I 000 ( , , , )

~
V002 ( , , , )
=

~
~
~
D0V 2V002 ( , , , ) 2V002 ( , , , ) 2V002 ( , , , )
+
+

D0 I
2
2
2

~
~
[1 + V ,V gV ,V ( , , , )]V001 ( , , , )V000 ( , , , ) ;

~
I 101 ( , , , )
=

~
~
~
2 I 101 ( , , , ) 2 I 101 ( , , , ) 2 I 101 ( , , , )
+
+

+
2
2
2

~
~
D0 I
I 001 ( , , , )
I 001 ( , , , )
(
)
(
)
+
g
,
,
,
T
+
g
,
,
,
T

I
+
D0V

~
I 001 ( , , , )

~
~
(
)

+
g
,
,
,
T
I
[1 + I g I ( , , , T )] I 100 ( , , , )V000 ( , , , )

~
~
~
~
V101 ( , , , )
D0V 2V101 ( , , , ) 2V101 ( , , , ) 2V101 ( , , , )
=
+
+

D0 I
2
2
2

~
~
D0V
V001 ( , , , )
V001 ( , , , )
+

gV ( , , , T )
+
g V ( , , , T )
+
D0 I

D0 I
D0V

~
V001 ( , , , )

~
~
gV ( , , , T )
[1 + V gV ( , , , T )] I 000 ( , , , )V100 ( , , , ) ;

~
I 011 ( , , , )
=

~
~
~
D0 I 2 I 011 ( , , , ) 2 I 011 ( , , , ) 2 I 011 ( , , , )
+
+

D0V
2
2
2

42

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
~
[1 + I , I g I , I ( , , , T )] I 000 ( , , , ) I 010 ( , , , ) [1 + I ,V g I ,V ( , , , T )]

~
~
I 001 ( , , , ) V000 ( , , , )
~
~
~
~
V011 ( , , , )
D0V 2 V011 ( , , , ) 2 V011 ( , , , ) 2 V011 ( , , , )
=
+
+

D0 I
2
2
2

~
~
[1 + V ,V gV ,V ( , , , T )] V000 ( , , , )V010 ( , , , ) [1 + I ,V g I ,V ( , , , t )]
~
~
I 000 ( , , , ) V001 ( , , , ) ;
~ijk (,,,)
~ijk ( , , , )
~ijk ( , , , )
~ijk ( , , , )
=0,
=0,
=0,
= 0,

=0
x =0
x =1
=1
~ijk ( , , , )
~ijk ( , , , )
=0,
= 0 (i 0, j 0, k 0);

=0
=1

~000 ( , , ,0 ) = f ( , , ) * , ~ijk ( , , ,0 ) = 0 (i 1, j 1, k 1).

Solutions of the above equations have been obtained by standard Fourier approach and could be
written as

~000 ( , , , ) =
where

Fn =

1
*

1 2
+ Fn c ( )c ( )c( )en ( ) ,
L L n =1

cos( n u ) cos( n v ) cos( n w) f n (u, v, w) d w d v d u , cn() = cos ( n ),

0
0
0
2 2
enI ( ) = exp n D0V D0 I , enV ( ) = exp 2 n 2 D0 I D0V ;

~
I i 00 ( , , , ) = 2
cn (w)

1
1
1
D0 I
n cn ( )c ( )c( )enI ( ) enI ( ) s n (u ) cn (v ) g I (u , v, w, T )
D0V n =1
0
0
0
0

1
I i 100 (u , v, w, )
D0 I
d wd v d u d 2
n cn ( )c ( )c( )enI ( ) enI ( ) cn (u )
u
D0V n =1
0
0

s n (v ) cn (w) g I (u, v, w, T )

~
I i 100 (u , v, w, )
D0 I
d w d v d u d 2
n cn ( )c ( )c( )
v
D0V n=1

enI ( ) enI ( ) c n (u ) cn (v ) s n (w) g I (u , v, w, T )

~
I i 100 (u , v, w, )
d w d v d u d , i 1,
w

1
1
1
D0V
~
Vi 00 ( , , , ) = 2
n cn ( )c ( )c( )enV ( ) enI ( ) s n (u ) cn (v ) g V (u , v, w, T )
D0 I n =1
0
0
0
0

cn (w )
1

1
1
Vi 100 (u , )
D0V
d wd v d u d
n cn ( )c ( )c( )enV ( ) enI ( ) cn (u ) s n (v )
D0 I n =1
u
0
0
0

2 cn (w) gV (u, v, w, T )
0

~
Vi 100 (u, )
D0V
d w d v d u d 2
n cn ( )c ( )c( )enV ( )
v
D0 I n=1

43

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
Vi 100 (u , )
d w d v d u d , i 1,
enI ( ) cn (u ) cn (v ) s n (w ) gV (u , v, w, T )
w
0
0
0
0

where sn() = sin ( n );

n =1

~010 ( , , , ) = 2 cn ( )cn ( )cn ( )en ( ) en ( ) cn (u ) cn (v ) cn (w)

~
~
[1 + I ,V g I ,V (u , v, w, T )] I 000 (u , v, w, ) V000 (u , v, w, )d w d v d u d ;
1
1
1

D0 I
cn ( )c n ( )c n ( )en ( ) en ( ) cn (u ) cn (v ) cn (w)
D0V n=1
0
0
0
0

~020 ( , , , ) = 2

~
~
~
~
I 010 (u , v, w, )V000 (u , v, w, ) + I 000 (u , v, w, )V010 (u , v, w, )
[1 + I ,V g I ,V (u , v, w, T )] d w d v d u d ;

n =1

~001 ( , , , ) = 2 cn ( )cn ( )cn ( )en ( ) en ( ) cn ( u ) cn ( v ) cn ( w)

2
(u, v, w, )d w d v d u d ;
1 + , g , (u , v, w,T ) ~000

n =1

~002 ( , , , ) = 2 cn ( )cn ( )cn ( )en ( ) en ( ) cn (u ) cn (v ) cn (w)

1 + , g , (u , v, w, T ) ~001 (u , v, w, ) ~000 (u , v, w, ) d w d v d u d ;

1
1
1
D0 I
n cn ( )cn ( )cn ( )enI ( ) enI ( ) sn (u ) cn (v ) cn (u )
D0V n =1
0
0
0
0

~
I110 ( , , , ) = 2
g I (u , v, w, T )

~
I i 100 (u , v, w, )
d w d v d u d 2
u

D0 I
n cn ( )cn ( )cn ( )enI ( )
D0V n =1

~
I i 100 (u , v, w, )
D0 I
d w d v d u d 2

v
D0V
0
0
0
0
~

1
1
1

I (u , v, w, )
n enI ( ) enI ( ) cn (u ) cn (v ) sn (u ) g I (u , v, w, T ) i 100
d wd v d u d
n =1
w
0
0
0
0

enI ( ) cn (u ) sn (v ) cn (u ) g I (u , v, w, T )

n =1

c n ( )cn ( )cn ( ) 2 cn ( )enI ( )cn ( )cn ( ) enI ( ) cn (u ) c n (v ) c n (v )[1 + I ,V

~
~
~
~
g I ,V (u , v, w, T )] I 100 (u , v, w, )V000 (u , v, w, ) + I 000 (u , v, w, )V100 (u , v, w, ) d w d v d u d

1
1
1
D0V
n cn ( )cn ( )cn ( ) enV ( ) enV ( ) s n (u ) cn (v ) cn (u )
D0 I n =1
0
0
0
0

~
V110 ( , , , ) = 2
gV (u , v, w, T )

~
Vi 100 (u , v, w, )
D0V
d w d v d u d 2
n cn ( )cn ( )cn ( )enV ( )
u
D0 I n =1

enV ( ) cn (u ) sn (v ) cn (u ) g V (u , v, w, T )

~
Vi 100 (u , v, w, )
d w d v d u d 2
v

D0V

D0 I

44

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
Vi 100 (u , v, w, )
n enV ( ) enV ( ) cn (u ) cn (v ) s n (u ) gV (u , v, w, T )
d wd v d u d
n =1
w
0
0
0
0

n =1

c n ( )cn ( )cn ( ) 2 c n ( )enI ( )cn ( )c n ( ) enV ( ) cn (u ) c n (v ) c n (v )[1 + I ,V

g I ,V (u, v, w,T )]

~
~
~
~
I100 (u, v, w, )V000 (u, v, w, ) + I 000 (u, v, w, ) V100 (u, v, w, ) d w d v d u d ;

1
1
1
D0 I
n cn ( )cn ( )cn ( )enI ( ) enI ( ) sn (u ) cn (v ) cn (w)
D0V n =1
0
0
0
0

~
I101 ( , , , ) = 2
g I (u , v, w, T )

~
I 001 (u , v, w, )
D0 I
d w d v d u d 2
n cn ( ) cn ( )cn ( )enI ( )
u
D0V n =1
~

I (u , v, w, )
enI ( ) cn (u ) s n (v ) cn (w)g I (u , v, w, T ) 001
d w d v d u d 2

D0 I

D0V

~
I 001 (u , v, w, )
n enI ( ) enI ( ) c n (u ) cn (v ) s n (w) g I (u , v, w, T )
d wd vd u d
n =1
w
0
0
0
0

n =1

c n ( )cn ( )cn ( ) 2 cn ( )cn ( )cn ( )enI ( ) enI ( ) [1 + I ,V g I ,V (u , v, w, T )]

~
~
cn ( u ) I 100 (u , v, w, )V000 (u , v, w, ) d w d v d u d

1
1
1
D0V
~
V101 ( , , , ) = 2
n cn ( )cn ( )cn ( )enV ( ) enV ( ) s n (u ) cn (v ) cn (w)
D0 I n =1
0
0
0
0

gV (u , v, w, T )

~
V001 (u , v, w, )
D0V
d w d v d u d 2
n cn ( )cn ( )cn ( )enV ( )
u
D0 I n =1

~
V001 (u , v, w, )
D0V
d w d v d u d 2

v
D0 I
0
0
0
0
~

1
1
1

V001 (u , v, w, )
(
)
(
)
(
)
(
)
(
)
(
)
n enV enV c n u c n v s n w gV u , v, w, T
d wd v d u d
n =1
w
0
0
0
0

enV ( ) cn (u ) sn (v ) cn (w) gV (u , v, w, T )

n =1

c n ( )cn ( )cn ( ) 2 c n ( )cn ( )cn ( )enV ( ) enV ( ) c n ( u ) cn ( v ) c n ( w)[1 + I ,V

~
~
g I ,V (u , v, w, T )] I 000 (u , v, w, )V100 (u , v, w, ) d w d v d u d ;

1
1
1

~
I 011 ( , , , ) = 2 cn ( )c n ( )c n ( )enI ( ) enI ( ) c n ( u ) cn ( v ) c n ( w)
n =1

~
~
[1 + I , I g I , I (u , v, w, T )]I 000 (u , v, w, ) I 010 (u , v, w, ) + [1 + I ,V g I ,V (u , v, w, T )]

~
~
I 001 (u , v, w, )V000 (u , v, w, ) d w d v d u d

1
1
1

~
V011 ( , , , ) = 2 c n ( )cn ( )cn ( )enV ( ) enV ( ) c n ( u ) c n ( v ) cn ( w)
n =1

~
~
[1 + V ,V gV ,V (u , v, w, T )]V000 (u , v, w, )V010 (u , v, w, ) + [1 + I ,V g I ,V (u , v, w, T )]
45

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

~
~
I 000 (u , v, w, )V001 (u , v, w, ) d w d v d u d .
Equations for initial-order approximations of distributions of concentrations of simplest complexes of radiation defects 0(x,y,z,t) and corrections for them i(x,y, z,t), i 1 and boundary and
initial conditions for them have been obtained as the functions Tij(x,y,z,t) and takes the form
2 I 0 ( x, y , z , t ) 2 I 0 ( x , y , z , t ) 2 I 0 ( x, y , z , t )
I 0 ( x, y , z , t )
= D0 I
+
+
+
t
x2
y2
z2

+ k I , I ( x, y , z , T ) I 2 ( x, y , z , t ) k I ( x, y , z , T ) I ( x, y , z , t )
2 V 0 ( x, y , z , t ) 2 V 0 ( x , y , z , t ) 2 V 0 ( x, y , z , t )
V 0 ( x, y , z , t )
= D0 V
+
+
+
t
x2
y2
z2

+ kV ,V ( x, y, z , T )V 2 ( x, y, z , t ) kV ( x, y, z, T )V ( x, y, z, t ) ;
2 I i ( x, y , z , t ) 2 I i ( x, y , z , t ) 2 I i ( x, y , z , t )
I i (x, y , z , t )
= D0 I
+
+
+
t
x2
y2
z2

I i 1 (x, y , z , t )
I i 1 (x, y , z , t )
+ D0 I
g I ( x, y , z , T )
+
g I ( x, y , z , T )
+
x
y
x
y

I i 1 ( x, y, z, t )

g I ( x , y , z , T )
, i1,
z
z

2 V i ( x, y , z , t ) 2 V i ( x, y , z , t ) 2 V i ( x, y , z , t )
V i ( x, y , z , t )
= D0 V
+
+
+
t
x2
y2
z2

V i 1 (x, y, z, t )
V i 1 (x, y, z, t )
+ D0 V g V ( x, y, z , T )
+
g V ( x, y , z , T )
+
x
y
x
y

V i 1 ( x, y , z , t )

g V ( x , y , z , T )
, i1;
z
z

i ( x, y , z , t )
x

i ( x, y , z , t )
x

x =0

i (x, y, z, t )
y

= 0,

= 0,
y=Ly

i ( x, y , z , t )
y

x = Lx

i ( x, y , z , t )
z

= 0,

= 0,
z =0

y =0

i ( x, y , z , t )
z

=0,

= 0 , i0;
z = Lz

0(x,y,z,0)=f (x,y,z), i(x,y,z,0)=0, i1.

Solutions of the above equations could be written as
0 ( x, y , z , t ) =

1
2
2
+
Fn cn ( x )cn ( y )cn ( z )en (t ) + n cn ( x )cn ( y ) cn ( z )
Lx L y Lz Lx L y Lz n =1
L n =1

46

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Lx

Ly

Lz

e n (t ) e n ( ) c n (u ) c n (v ) c n (w) k I , I (u , v, w, T ) I 2 (u , v, w, ) k I (u , v, w, T )
I (u , v, w, )] d w d v d u d ,
Ly
Lx
Lz

1
1
1
where Fn = cn (u) cn (v) cn (w) f (u, v, w) d wd v d u , en (t ) = exp 2 n 2 D0 t 2 + 2 + 2 ,

0
0
0

Lx Ly Lz
cn(x) = cos ( n x/Lx);

i ( x, y , z , t ) =
g (u , v, w, T )

Ly
Lx
Lz
t
2
n cn (x ) cn ( y ) cn ( z ) e n (t ) e n ( ) s n (u ) cn (v ) cn (w)
L L y Lz n=1
0
0
0
0

2
x

I i 1 (u , v, w, )
u

d w d v d u d

2
n cn ( x )cn ( y )c n ( z )e n (t )
Lx L2y Lz n=1

Lx

Ly

Lz

I i 1 (u, v, w, )

e n ( ) cn (u ) s n (v ) cn (w) g (u , v, w, T )

d w d v d u d

Lx L y

Ly
Lx
Lz
t
I i 1 (u , v, w, )
1
(
)
(
)
(
)
(
)
(
)
(
)
(
)

n
c
x
c
y
c
z
e
t
e
c
u
c
v

s n (w)
n
n
n

n
n
n
2

Lz n =1
w
0
0
0
0

g (u , v, w, T ) d w d v d u d , i1,

where sn(x) = sin ( n x/Lx).

Equations for initial-order approximation of dopant concentration C00(x,y,z,t), corrections for
them Cij(x,y,z,t) (i 1, j 1) and boundary and initial conditions take the form
C 00 (x, y , z , t )
2 C 00 (x, y , z , t )
2 C 00 ( x, y, z , t )
2 C 00 (x, y , z , t )
;
= D0 L
+
D
+
D
0L
0L
t
x2
y2
z2

C i 0 (x, y , z , t )
2 C i 0 ( x, y , z , t )
2 C i 0 ( x, y , z , t )
2 C i 0 ( x, y , z , t )
= D0 L
+
D
+
+
D
0
0
L
L
t
x2
y2
z2
+ D0 L

C i 10 ( x, y, z , t )
C i 10 ( x, y, z , t )


g L ( x, y , z , T )
+ D0 L
g L ( x, y , z , T )
+
x
x
y
y

+ D0 L

C ( x, y , z , t )

g L ( x, y, z , T ) i 10

, i 1;
z
z

C 01 ( x, y , z , t )
2 C 01 ( x, y , z , t )
2 C 01 ( x, y, z , t )
2 C 01 ( x, y , z , t )
= D0 L
+
D
+
D
+
0
L
0
L
t
x2
y2
z2

+ D0 L

C 00 ( x, y, z , t ) C 00 ( x, y, z , t )
C00 ( x, y, z, t ) C00 ( x, y, z , t )

+ D0 L

+
x P ( x, y , z , T )
x
y P ( x, y , z , T )
y

+ D0 L

C 00 (x, y , z , t ) C 00 (x, y , z , t )

;
z P ( x, y , z , T )
z

C02 ( x, y, z , t )
2 C02 ( x, y, z, t )
2 C02 (x, y, z, t )
2 C02 ( x, y, z, t )
= D0 L
+
D
+
D
+
0
L
0
L
t
x2
y2
z2
47

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

C 1 ( x, y, z , t ) C00 ( x, y, z, t )
C00 1 ( x, y, z , t )
(
)
+ C01 (x, y, z , t ) 00
+
C
x
,
y
,
z
,
t

01

P ( x, y , z , T )
x
P ( x, y , z , T )
y
x

C00 (x, y, z , t )
C00 1 ( x, y, z , t ) C00 ( x, y, z, t )
C 01 ( x, y, z , t ) (
D0 L +
+
y
P x, y , z , T )
z

C ( x, y , z , t ) C 01 ( x, y , z , t ) C 00 ( x, y , z , t ) C 01 ( x, y, z , t )
+ D0 L 00
+

+
x
y
y P ( x, y , z , T )

x P ( x, y , z , T )

C 00 ( x, y, z, t ) C01 ( x, y, z, t )

;
z P ( x, y , z , T )
z

C11 ( x, y, z , t )
2 C11 ( x, y , z , t )
2 C11 (x, y , z , t )
2 C11 ( x, y, z , t )
D
D
= D0 L
+
+
+
0L
0L
t
x2
y2
z2

C 1 ( x, y, z, t ) C00 (x, y, z, t )
C00 1 (x, y, z , t )
(
)
+ C10 (x, y, z , t ) 00
+
C
x
,
y
,
z
,
t

10
P ( x, y , z , T )
x
P ( x, y , z , T )
y
x

C 00 ( x, y , z , t )
C 00 1 (x, y , z , t ) C 00 ( x, y, z , t )
+
C10 (x, y , z , t )
D0 L +
y
P ( x, y , z , T )
z
z

C ( x, y, z, t ) C10 ( x, y, z, t ) C00 ( x, y, z , t ) C10 ( x, y, z, t )

+ D0 L 00
+

+
x
y
y P ( x, y , z , T )

x P ( x, y , z , T )
+

C 01 ( x, y, z , t )
C 00 ( x, y , z , t ) C10 ( x, y, z , t )

+ D0 L g L ( x, y, z , T )
+
z P ( x, y , z , T )
z
x

C01 ( x, y, z, t )
C01 ( x, y, z , t )

g L ( x, y , z , T )
+
g L ( x, y , z , T )
;
y
y
z
z

C ij (x, y, z, t )
Cij (x, y, z, t )
C ij ( x, y , z , t )
=0,
=0,
= 0,
x
x
y
x =0
x = Lx
y =0

Cij (x, y, z, t )
Cij (x, y, z, t )
Cij (x, y, z , t )
= 0,
=0,
= 0 , i 0, j 0;
y
z
z
y =Ly
z =0
z = Lz
C00(x,y,z,0)=fC (x,y,z), Cij(x,y,z,0)=0, i 1, j 1.
Solutions of the above equations with account boundary and initial conditions could be written as
C00 (x, y, z , t ) =

1
2
+
FnC cn ( x )cn ( y )cn (z )enC (t ) ,
Lx L y Lz Lx L y Lz n=1

Ly
Lx
Lz

1
1
1
where FnC = cn (u) cn (v) cn (w) f (u, v, w) d wd v d u , enC (t ) = exp 2 n 2 D0 t 2 + 2 + 2 ;
L L L
0
0
0
y
z
x

C i 0 ( x, y , z , t ) =

Ly
Lx
Lz
t

2
n FnC c n ( x ) c n ( y ) c n ( z ) e nC (t ) e nC ( ) s n (u ) c n (v ) g L (u , v, w, T )
L L y L z n =1
0
0
0
0
2
x

48

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

c n (v )

Lx
t

C i 10 (u, v, w, )
2
d wd vd u d
n FnC c n ( x ) c n ( y ) c n (z ) e nC (t ) e nC ( ) c n (u )
2
u
L x L y L z n =1
0
0

Ly

Lz

s n (v ) c n (v ) g L (u , v, w, T )

C i 10 (u , v, w, )
2
d wd vd u d
n FnC c n ( x ) c n ( y ) c n ( z )
2
v
L x L y L z n =1

Lx

Ly

Lz

e nC (t ) e nC ( ) c n (u ) c n (v ) s n (v ) g L (u , v, w, T )
C 01 (x, y , z , t ) =
c n (w )

C i 10 (u , v, w, )
d w d v d u d , i 1;
w

Ly
Lx
L z C (u , v, w, )
t

2
00
(
)
(
)
(
)
(
)
(
)
(
)
(
)

n
F
c
x
c
y
c
z
e
t
e
s
u
c
v

nC
n
n
n
nC
nC
n
n
L2x L y L z n =1
0
0
0
0 P (u , v, w, T )

C 00 (u , v, w, )
2
d wd vd u d
n FnC c n ( x ) c n ( y ) c n ( z ) e nC (t ) e nC ( )
2
u
L x L y L z n =1
0

Lx

Ly

Lz

c n (u ) s n (v ) c n (w)

C 00 (u , v, w, ) C 00 (u , v, w, )
2
d wd vd u d
n FnC e nC (t )

2
P (u , v, w, T )
v
L x L y L z n =1

Lx

Ly

Lz

c n (x ) c n ( y ) c n (z ) enC ( ) c n (u ) c n (v ) s n (w)
C 02 (x, y , z , t ) =
C 01 (u , v, w, )

C 00 (u , v, w, ) C 00 (u , v, w, )
d wd vd u d ;
P (u , v, w, T )
w

Ly
Lx
Lz
t
2
(
)
(
)
(
)
(
)
(
)
(
)
n
F
c
x
c
y
c
z
e
t
e

s
u

cn (v ) c n (w)
nC n
n
n
nC
nC
n
2
Lx L y Lz n =1
0
0
0
0

C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
d wd v d u d
FnC cn ( x )cn ( y )

P (u , v, w, T )
u
Lx L2y Lz n =1
t

Lx

Ly

Lz

n cn (z )enC (t ) enC ( ) c n (u ) s n (v ) C 01 (u , v, w, )

cn (w) d w d v d u d
Lz

s n (w)C 01 (u , v, w, )
0

C 00 1 (u , v, w, ) C 00 (u , v, w, )

P (u , v, w, T )
v

Ly
Lx
t
2
n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u ) cn (v )
2
Lx L y Lz n=1
0
0
0

C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
d wd vd u d 2
n cn (x )

P (u , v, w, T )
w
Lx L y Lz n =1
t

Lx

Ly

Lz

FnC c n ( y )c n ( z )enC (t ) enC ( ) s n (u ) cn (v ) c n (w)C 01 (u , v, w, )

C 00 (u , v, w, )

Lx
t

C 00 1 (u , v, w, )
2
(
)
(
)
(
)
(
)
(
)
d
w
d
v
d
u
d

n
F
c
x
c
y
c
z
e
t
e

c n (u )
nC
n
n
n
nC
nC
P (u , v, w, T )
L x L2y L z n =1
0
0

Ly

Lz

s n (v ) cn (w) C01 (u , v, w, )

C00 1 (u , v, w, ) C00 (u , v, w, )
2
d wd v d u d
n

P (u , v, w, T )
v
Lx L y L2z n=1

Lx

Ly

Lz

FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u ) cn (v ) s n (w )C 01 (u , v, w, )

C 00 1 (u , v, w, )

P (u , v, w, T )

Lx
t
C00 (u , v, w, )
2
d wd vd u d 2
FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) s n (u )
w
Lx L y Lz n=1
0
0

49

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

Ly

Lz

n cn (v ) cn (w)

C 00 (u , v, w, ) C 01 (u , v, w, )
2
d wd v d u d
c n ( x )enC (t )

P (u , v, w, T )
Lx L2y Lz n =1
u

Lx

Ly

Lz

FnC c n ( y ) enC ( ) c n (u ) s n (v ) cn (w)

n cn ( z )

C 00 (u , v, w, ) C 01 (u , v, w, )
d wd v d u d
P (u , v, w, T )
v

Ly
Lx
Lz
t
2
n
F
c
(
x
)
c
(
y
)
c
(
z
)
e
(
t
)
e
(

)
c
(
u
)
c
(
v
)

s n (w)
nC
n
n
n
nC
nC
n
n
Lx L y L2z n=1
0
0
0
0

C 00 (u , v, w, ) C 01 (u , v, w, )
d wd v d u d ;
P (u , v, w, T )
w

C11 ( x, y , z , t ) =

g L (u , v, w, T )

Ly
Lx
Lz
t
2
n FnC cn ( x )cn ( y )cn (z )enC (t ) enC ( ) s n (u ) c n (v ) c n (w)
L L y Lz n =1
0
0
0
0
2
x

C 01 (u , v, w, )
2
d wd v d u d
n FnC cn ( x )cn ( y )cn (z )enC (t )
u
Lx L2y Lz n=1

Lx

Ly

Lz

enC ( ) cn (u ) s n (v ) c n (w ) g L (u , v, w, T )

Lx

Ly

Lz

n =1

C 01 (u , v, w, )
2
d wd vd u d

Lx L y L2z
v

n enC (t ) enC ( ) cn (u ) c n (v ) s n (w) g L (u , v, w, T )

FnC cn ( x )cn ( y )cn ( z )

Lz

n c n (w)
0

Ly
Lx
t
2
F
c
(
x
)
c
(
y
)
c
(
z
)
e
(
t
)
e
(

)
s
(
u
)

cn (v )
nC n
n
n
nC
nC
n
L2x L y Lz n=1
0
0
0

C 00 (u , v, w, ) C10 (u , v, w, )
2
d wd v d u d
n FnC c n ( x )cn ( y )

P (u , v, w, T )
u
Lx L2y Lz n =1
t

Lx

Ly

Lz

c n ( z )enC (t ) enC ( ) cn (u ) s n (v ) c n (w)

C 01 (u , v, w, )
d wd vd u d
w

C 00 (u , v, w, ) C10 (u , v, w, )
d wd v d u d
P (u , v, w, T )
v

Ly
Lx
Lz
t
C (u , v, w, )
2
n FnC cn (x ) cn ( y )cn ( z )enC (t ) enC ( ) cn (u ) cn (v ) s n (w) 00

2
Lx L y Lz n =1
P (u , v, w, T )
0
0
0
0

Lx
t
C10 (u , v, w, )
2
d wd v d u d 2
n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) sn (u )
w
Lx L y Lz n=1
0
0
Ly

Lz

c n (v ) c n (w )C10 (u , v, w, )

C 00 1 (u , v, w, ) C 00 (u , v, w, )
2
d wd v d u d
n

P (u , v, w, T )
u
Lx L2y Lz n=1

Lx

Ly

Lz

FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u ) sn (v ) cn (w)

C10 (u , v, w, ) d w d v d u d
Ly

Lz

C00 1 (u , v, w, ) C00 (u , v, w, )

P (u, v, w, T )
v

Lx
t
2
n FnC cn ( x )cn ( y )cn ( z )enC (t ) enC ( ) cn (u )
2
Lx L y Lz n=1
0
0

cn (v ) s n (w)C10 (u , v, w, )

C 00 1 (u , v, w, ) C 00 (u , v, w, )
d wd vd u d .
P (u , v, w, T )
w

50

International Journal on Computational Sciences & Applications (IJCSA) Vol.4, No.5, October 2014

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Authors
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Radiophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radiophysics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Microstructures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgorod State University of Architecture and Civil Engineering. Now E.L. Pankratov is in his Full Doctor
course in Radiophysical Department of Nizhny Novgorod State University. He has 102 published papers in
area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
Center for gifted children. From 2009 she is a student of Nizhny Novgorod State University of Architecture and Civil Engineering (spatiality Assessment and management of real estate). At the same time she
is a student of courses Translator in the field of professional communication and Design (interior art) in
the University. E.A. Bulaeva was a contributor of grant of President of Russia (grant_ MK-548.2010.2).
She has 50 published papers in area of her researches.
52