PART 8-Elec Buk (Final)

PART 8
TRANSISTORS and AMPLIFIERS

I. TRANSISTOR FUNDAMENTALS

TRANSISTOR
Developed in December 23,1947 in Bell laboratories
By John Bardeen, William Shockley and Walter Brattain
Basically a resistor that ampliies electrical imp!lses as they are transerred
rom its inp!t to its o!tp!t terminals"
Basic Types
1. BIPOLAR JUNCTION TRANSISTOR (BJT)
#t is a three layer semicond!ctor device consistin$ o either t%o & and one '(
type layers o materials or t%o ' and one &(type layers o semicond!ctor
materials"

T!ee !e"i#ns #$ BJT
a" Base
)e$ion to %hich carriers lo% rom emitter to collector
1*
17
dopants+cm
3
,oderately doped
b" -mitter
)e$ion rom %hich carriers lo%
1*
19
dopants+cm
3
.eavily doped
c" /ollector
)e$ion to %hich carriers lo%
1*
10
dopants+cm
3
1i$htly doped
1ar$est
BJT S%!&c%&!e and C#ns%!&c%i#n
Mac!# In%e"!a%ed T!ainin" and Re'ie( Cen%e! E)*c+!,ni-

Dry/ell
./0 Transistors and Amplifiers
T!ansis%#! C&!!en%s and C#n$i"&!a%i#ns
a" /ommon Base /oni$!ration
#n this circ!it, the inp!t si$nal is applied at the emitter, the o!tp!t is taken at the
collector and the base is the common terminal
2his has very lo% inp!t impedance
A)pa ()
#n the dc mode the levels o #/ and #- d!e to ma3ority carriers are related by a 4!antity
called alpha and deined by the ollo%in$ e4!ation5

1
e
c
I
I
b" /ommon -mitter /oni$!ration
2he inp!t is applied at the base, the ampliied o!tp!t is taken rom the
collector, and the emitter is the common terminal"
2his circ!it is the one $enerally !sed or transistors beca!se the /- ampliier
has the best combination o c!rrent and volta$e $ains
E)*c+!,ni- Mac!# In%e"!a%ed T!ainin" and Re'ie( Cen%e!
Transistors and Amplifiers .- 2
Ie 1
c 3
I I +
Be%a ()
)atio o the collector c!rrent to the base c!rrent
=
3
c
I
I
c" /ommon /ollector /oni$!ration
2his circ!it has the inp!t applied at the base, the o!tp!t taken at the emitter
terminal and the collector is the common terminal
#mpedance matchin$
4a55a ()
6or%ard c!rrent $ain or common collector coni$!ration
1
3
e
I
I
C#5pa!is#n #$ A5p)i$ie! C#n$i"&!a%i#ns
Ca!ac%e!is%ic C#55#n
Base
C#55#n
E5i%%e!
C#55#n
C#))ec%#!
P#(e! 4ain moderate hi$hest moderate
6#)%a"e 4ain hi$hest moderate less than 1
C&!!en% 4ain lo%est less
than1
moderate hi$hest
Inp&%
I5pedance
lo%est moderate hi$hest
O&%p&%
I5pedance
hi$hest moderate lo%est
Pase
In'e!si#n
none 17*8 9!t o phase none
App)ica%i#ns )6 amp !niversal isolation
T!ansis%#! Biasin"
Bias
an electrical, mechanical, or ma$netic orce applied to a device to establish a
desired electrical or mechanical reerence level or its operation"
is a D/ volta$e or c!rrent that sets the operatin$ point or ampliyin$ the :/
si$nal
a" 6i;ed Bias
is taken rom a battery or po%er s!pply
b" Sel Bias
2he ampliier prod!ces its o%n D/ volta$e rom an #) drop across a resistor in
the ret!rn circ!it o the common terminal"
Sel(bias is probably the type o bias !sed most oten beca!se it is economical
and has stabili<in$ eect on the D/ level o the o!tp!t c!rrent"
/an be emitter stabili<ed or collector stabili<ed
c" =olta$e(Divider Bias
2he most stable type o circ!it biasin$

d" Si$nal Bias
Re"i#ns #$ T!ansis%#! Ac%i#n
a" :ctive )e$ion
Base(emitter 3!nction is or%ard biased and the collector(base 3!nction is
reverse biased"
2ransistor>s active operation as an ampliier
b" Sat!ration )e$ion
both 3!nctions are or%ard biased
s%itch on operation or the transistor
c" /!t o )e$ion
both 3!nctions are reverse biased
s%itch o operation or the transistor
L#ad)ine and :/p#in%
Transistors and Amplifiers .- ;
L#ad)ine is a strai$ht line dra%n on the collector c!rves bet%een the c!t(o
and sat!ration points o the transistor
:/p#in% ?@!iescent 'ointA is the operatin$ point o the transistor %ith the time
varyin$ so!rces o!t o the circ!it
Re'ie( :&es%i#n<
Biven the circ!it belo%, dra% the D/ loadline
:nalysis5 :t c!t(o, #c C * th!s =/- C =//
:t sat!ration, =/- C * th!s #c C =// + )c

BJT S5a)) Si"na) Ana)ysis
=/Pa!a5e%e!s<
./. Transistors and Amplifiers
1" hi ( short circ!it inp!t impedance
Ii
6i
i = D (6# 1 >)
2" hr ( open circ!it reverse volta$e $ain ?volta$e eedback ratioA
! 1
6#
6i
(Ii 1 >)
3" h ( short circ!it or%ard c!rrent $ain
$ 1
Ii
I#
( 6# 1 >)
4" ho ( open circ!it o!tp!t admittance
# 1
6#
I#
(Ii 1 >)
0. FIELD EFFECT TRANSISTOR (FET)
Unipolar device beca!se they operate only %ith one type o char$e carrier
Voltage controlled device %here the volta$e bet%een t%o o the terminals
?$ate and so!rceA controls the c!rrent thro!$h the device"
,a3or eat!re is very high input resistance
a. J&nc%i#n Fie)d E$$ec% T!ansis%#! (JFET)
9perates %ith a reverse(biased '& 3!nction to control c!rrent in the channel
S4!are la% device beca!se o the relation o #D and =BS
Transistors and Amplifiers .- ?
ID C
0
) #$$ ( 4S
4S
DSS
6
6
1 I

J6-2+D(,9S6-2 transer characteristics

/an be n(channel or p(channel

JFET Sy53#)s
Ope!a%i#n #$ JFET
J6-2 is al%ays operated %ith the $ate(so!rce '& 3!nction reversed biased
)everse biasin$ o the $ate(so!rce 3!nction %ith ne$ative volta$e prod!ces a
depletion re$ion alon$ the '& 3!nction %hich e;tends into the n(channel and
th!s increases its resistance by restrictin$ the channel %idth as sho%n in the
precedin$ i$!re"
./1> Transistors and Amplifiers
DC Biasin" $#! JFET
1" 6i;ed Bias
a separate po%er so!rce"
2" Sel Bias
3" So!rce Bias
4" =olta$e Divider
3. Me%a) O@ide Se5ic#nd&c%#! Fie)d E$$ec% T!ansis%#! (MOSFET)
second cate$ory o the ield eect transistor
beca!se o the presence o an ins!lated $ate then it is sometimes called
#B6-2s
,9S6-2S diers rom J6-2 in that it has no '& 3!nction str!ct!re
#t has t%o basic types, D E,9S6-2 and - E ,9S6-2
Dep)e%i#n MOSFET (D/MOSFET)
2he drain and so!rce are di!sed into the s!bstrate material and connected by
a narro% channel ad3acent to the ins!lated $ate
#t can be operated in t%o modes(the depletion mode or the enhancement mode
and sometimes called depletion+enhancement mode ,9S6-2
#t can be operated %ith a <ero, positive or ne$ative $ate(so!rce volta$e
&ormally operated in the depletion mode
When coni$!red as s%itch, it is normally(on
Dep)e%i#n M#de
&e$ative $ate to so!rce volta$e is applied
n Echannel is depleted o some electrons hence decreasin$ channel
cond!ctivity
Enance5en% M#de
positive $ate volta$e is applied
more cond!ction electrons are attracted to the channel th!s enhancin$ channel
cond!ctivity

Enance5en% MOSFET (E/MOSFET)
operates only in the enhancement mode
has no depletion mode
it has no str!ct!ral channel
it has no #DSS parameter
or an n(channel type o this device, a positive $ate volta$e above threshold
ind!ces a channel by creatin$ a layer o ne$ative char$es ?inversion layerA in
the s!bstrate portion that is ad3acent to the Si92 layer"
:n n(channel -(,9S6-2 has a positive =BS %hile a p(channel -(,9S6-2 has
a ne$ative =BS
2he cond!ctivity o its channel is enhanced by increasin$ the $ate to so!rce
volta$e
6or $ate volta$e belo% the threshold, there is no channel to be ormed
# coni$!red as a s%itch, this device is normally o
LD MOSEFT, VMOSFET and TMOSFET are -,9S6-2 technolo$ies
developed or hi$her po%er dissipation
II. AMPLIFIERS
-lectronic devices capable o ampliication or increasin$ the amplit!de o
po%er, c!rrent or volta$e at its o!tp!t
/irc!its desi$ned to increase the amplit!de or level o an electronic si$nal"
Fsed as boosters
C)assi$ica%i#ns #$ A5p)i$ie!s<
1. Acc#!din" %# F&nc%i#n
a"=olta$e :mpliier
=olta$e controlled so!rce
9p(amps are volta$e ampliier
b"/!rrent :mpliier
/!rrent controlled so!rce
BJ2s are c!rrent ampliier
c"'o%er :mpliier
Boost the po%er level o the si$nal
0. Acc#!din" %# C#n$i"&!a%i#n
a" /ommon Base :mpliier
2ransistor ampliier %here inp!t is applied at the emitter and o!tp!t is taken
rom the collector terminal
2he base is common to both inp!t and o!tp!t
,a;im!m c!rrent $ain is 1
&o phase inversion rom inp!t to o!tp!t
b" /ommon /ollector :mpliier ?emitter ollo%erA
2ransistor ampliier %here inp!t is applied at the base, o!tp!t is taken rom the
emitter terminal
,a;im!m volta$e $ain is 1
/apacitors m!st have a ne$li$ible reactance at the re4!ency o operation
&o phase inversion rom inp!t to o!tp!t
c" /ommon -mitter :mpliier
2ransistor ampliier %herein the inp!t is applied at the base and the o!tp!t is
taken rom the collector terminal
2here is a phase inversion rom inp!t to o!tp!t
2. Acc#!din" %# C)ass #$ Ope!a%i#n
a" /lass : :mpliier
b" /lass B :mpliier
c" /lass / :mpliier
d" /lass :B :mpliier
C)ass A C)ass B C)ass C C)ass AB
E$$iciency 0*G 77"0G 1**G Bet%een :
H B
C#nd&c%i#n
An")e
3I* 17* Belo%
17*
Sli$htly
$reater
than 17*
Dis%#!%i#n 1o% .i$h e;treme moderate
Bias
(3ase e5i%%e!)
1inear
portion
:bove
c!t(o
Belo%
c!t(o
c!t(o
inp!t o!tp!t
o!tp!t
o!tp!t
o!tp!t
o!tp!t
C#5pa!is#n #$ A5p)i$ie! C)asses
7. Acc#!din" %# F!eA&ency
a" D/ :mpliier
:mpliies D/ si$nal?<ero re4!encyA
b" :!dio :mpliier
:mpliies si$nal %hose re4!ency is %ithin the a!dio ran$e?2* .<(2*J.<A
c" )6 :mpliier
:mpliies si$nal %hose re4!ency is %ithin the radio re4!ency ran$e
d" #6 :mpliier
:mpliies si$nal %hose re4!ency is in bet%een the carrier and the mod!latin$
re4!ency
e" =ideo :mpliier
: %ide(band ampliier that ampliies video si$nal
=ideo si$nal reers to the re4!ency ran$e o the pict!re inormation %hich
arises rom the television scannin$ process
8. Acc#!din" %# %e Si"na) 3ein" a5p)i$ied
a" Small Si$nal :mpliiers
:mpliier that !tili<es only the very linear portion o the active device
b" 1ar$e Si$nal :mpliiers
:mpliier that !tili<es almost the !ll rated o!tp!t po%er o the active device
9. Acc#!din" %# Me%#d #$ C#&p)in"
a" Direct /o!plin$
:mpliiers connected or co!pled %itho!t any passive component in bet%een"
b" /apacitive /o!plin$
:mpliiers are connected or co!pled by the !sed o capacitor termed as
co!plin$(capacitor
c" #nd!ctive /o!plin$
:mpliiers are connected or co!pled by the !se o ind!ctor or transormer
d" 2ransormer /o!plin$
,ost oten, ind!ctor is not !sed as co!plin$ device instead transormer is !sed
;. P#(e! A5p)i$ie!s
a" '!sh('!ll :mpliiers
:mpliier %ith t%o similar circ!its operatin$ in phase opposition"
9ne ampliies hal o the cycle and the remainin$ hal is bein$ ampliied by the
other ampliier
b" /omplementary ESymmetry :mpliiers
'!sh(p!ll ampliiers !sin$ complementary transistors s!ch as pair o pnp and
npn
c" @!asi(/omplementary :mpliier
'!sh(p!ll ampliiers !sin$ the same transistors at the o!tp!t b!t the driver is
!sin$ complementary transistors
Transistors and Amplifiers .- 1;
C#5p#&nd C#n$i"&!a%i#ns
a" /ascade /onnection
a cascade connection is a series connection %ith the o!tp!t o one sta$e then
applied as inp!t to the second sta$e"
2he cascade connection provides a m!ltiplication o the $ain o each sta$e or
a lar$er overall $ain"
A' 1 A'1A'0A'2B.. A'n
A'(dB) 1 0>)#" (A')
b" /ascode /onnection
a cascode connection has one transistor on top o ?in series %ithA another
2his arran$ement is desi$n to provide hi$h inp!t impedance %ith lo% volta$e
$ain to ens!re that the inp!t ,iller capacitance is minim!m"
c" Darlin$ton /onnection
2he main eat!re o the Darlin$ton connection is that the composite transistor
acts a sin$le !nit %ith a c!rrent $ain that is the prod!ct o the c!rrent $ains o
the individ!al transistors"
#t is a circ!it meant to boost inp!t resistance
D 1 10
d" 6eedback 'air
2he eedback pair connection is a t%o(transistor circ!it that operates like the
Darlin$ton circ!it
#t !ses a pnp transistor drivin$ an npn"
./1. Transistors and Amplifiers
TEST COURSELF 8
Re'ie( :&es%i#ns

1" : '&' transistor is made o
a" silicon
b" $ermani!m
c" carbon
d" either silicon or $ermani!m
Ans(e! d" either silicon or $ermani!m
2" 2he transistor is !s!ally encaps!lated in
a" $raphite po%der
b" enamel paint
c" epo;y raisin
d" black plastic
Ans(e! c" epo;y raisin
3" 'o%er transistors are invariably provided %ith
a" solder connections
b" heat sink
c" metallic casin$
d" scre% bolt
Ans(e! b" heat sink
4" 2he transistor speciication n!mber 2& reers to a
a" diode
b" 3!nction transistor
c" 6-2 %ith one $ate
d" S/)
Ans(e! b" 3!nction transistor
0" Which i the ollo%in$ is necessary or a transistor actionK
a" the base re$ion m!st be very %ide
b" the base re$ion m!st be very narro%
c"the base re$ion m!st be made rom ins!latin$ materials
d" the collector re$ion m!st be heavily doped
Ans(e! b" the base re$ion m!st be very narro%
I" :s compared to a /B ampliier a /- ampliier has
Transistors and Amplifiers .- 1?
a" lo% c!rrent ampliication
b" hi$her c!rrent ampliication
c"lo%er inp!t resistance
d" hi$her inp!t resistance
Ans(e! b" hi$her c!rrent ampliication
7" #t is the most stable type o circ!it biasin$
a" sel(bias
b" si$nal bias
c" volta$e(divider bias
d" i;ed bias
Ans(e! c" volta$e(divider bias
7" 2he 4!iescent state o a transistor implies
a" <ero bias
b" no o!tp!t
c" no distortion
d" no inp!t si$nal
Ans(e! d" no inp!t si$nal
9" -ach o the 2 cascaded sta$es has a volta$e $ain o 3*" What is the overall $ainK
a"3
b" 9
c" 3*
d" 9**
Ans(e! d" 9**
S#)&%i#n
Btotal C ?3*A?3*A C 9**
1*" Which class o ampliiers operates %ith the least distortionK
a"/lass :
b" /lass B
c" /lass /
d" /lass D
Ans(e! a" /lass :
11" Which o the ollo%in$ circ!it is the astest s%itchin$ deviceK
a" J6-2
b" BJ2
c" ,9S6-2
d" 2riode
Ans(e! c" ,9S6-2
12" Which o the ollo%in$ device is a !nipolarK
a" 6-2
./0> Transistors and Amplifiers
b" BJ2
c" Lener diode
d" 1-D
Ans(e! a" 6-2
13" 2he cascaded ampliier %hich is oten !sed in the #/ is
a" ind!ctively co!pled
b" capacitively co!pled
c" direct co!pled
d" transormer co!pled
Ans(e! c" direct co!pled
14" .i$hest operatin$ re4!ency can be e;pected in case o
a" bipolar transistor
b" J6-2
c" ,9S6-2
d" #B6-2
Ans(e! a" bipolar transistor
10" Which o the ollo%in$ is e;pected to have the hi$hest inp!t impedanceK
a" ,9S6-2
b" J6-2 ampliier
c" /- bipolar transistor
d" // bipolar transistor
Ans(e! a" ,9S6-2
1I" 2he MMMMMMis 4!ite pop!lar in di$ital circ!its especially in /,9S %hich re4!ire very lo% po%er
cons!mption"
a" J6-2
b" BJ2
c" D(type ,9S6-2
d" -(type ,9S6-2
Ans(e! d" -(type ,9S6-2
17" What is the ampliication actor in 6-2 transistor ampliiersK
a" Li
b" $m
c" #D
d" #B
Ans(e! b" $m
17" 2he -(,9S6-2 is 4!ite pop!lar in %hat type o applications"
a" di$ital circ!itry
b" hi$h re4!ency
c"b!erin$
d" a, b and c
Ans(e! d" a, b and c
19" : J6-2 3!st operates %ith speciically
a" the drain connected to $ro!nd
b" $ate to so!rce '& 3!nction or%ard biased
c" $ate connected to the so!rce
d" $ate to so!rce '& 3!nction reverse biased
Ans(e! d" $ate to so!rce '& 3!nction reverse biased
2*" 2he main dierence o a ,9S6-2 rom a J6-2 is that
a" J6-2 has '& 3!nction
b" o the po%er ratin$
c" ,9S6-2S has t%o $ates
d" ,9S6-2s do not have physical channel
Ans(e! a" J6-2 has '& 3!nction
21" : small si$nal ampliier
a" !ses only a small portion o its loadline
b" al%ays has an o!tp!t si$nal in the m= ran$e
c" $oes into sat!ration once on each inp!t cycle
d" is al%ays a common emitter ampliier
Ans(e! a" !ses only a small portion o its loadline
22" 2he parameter he corresponds to
a" ND/
b" N:/
c" r>e
d" r>c
Ans(e! b" N:/
23" # the D/ emitter c!rrent in a certain transistor ampliier is 3 m:, the appro;imate val!e o r>e is
a" 3JO
b" 3O
c" 7"33 O
d" *"33 JO
Ans(e! c" 7"33 O
S#)&%i#n
r>e C = II " 7
m: 3
m= 2I
24" 2he inp!t resistance o a common base ampliier is
a" very lo%
b" very hi$h
c" the same as /-
d" the same as //
Ans(e! a" very lo%
20" -ach sta$e o a o!r sta$e ampliier has a volta$e $ain o 10" 2he overall volta$e $ain is
a" I*
b"10
c" 0*I20
d" 3*77
Ans(e! c" 0*I20
S#)&%i#n
=over(all C ?10A?10A?10A?10A C 0* I20
2I" 2he ma;im!m eiciency o a transormer co!pled /lass : ampliier isMM"
a" 20
b" 0*
c" 77"0
d" 1**
Ans(e! b" 0*
27" #n a ,9S6-2, the process o creatin$ a channel by the addition o char$e carrier is called"
a" ind!cement
b" improvement
c" balancin$
d" enhancement
Ans(e! d" enhancement
27" What is the c!rrent $ain o a common base circ!it calledK
a" $amma
b" delta
c" bravo
d" alpha
Ans(e! d" alpha
29" 2he name o the very irst transistor
a" diode
b" 3!nction transistor
c" point contact transistor
d" triode
Ans(e! c" point contact transistor
3*" )e$ion in a transistor that is heavily doped"
a" collector
b" emitter
c" base
d" $ate
Ans(e! b" emitter
31" #n a common Ebase ampliier the volta$e $ain isMMMMM"?:pril, 2**3A
a" medi!m
b" lo%
c" <ero
d" hi$h
Ans(e! d" hi$h
32" #n a common collector ampliier, the inp!t resistance isMMM"?&ov,2**3A
a" hi$h
b" <ero
c" medi!m
d" lo%
Ans(e! a" hi$h
33" : depletion ,9S6-2 ?D(,9S6-2A can operate %ith %hich o the ollo%in$ $ate(so!rce
volta$eK ?&ovember, 2**3A
1" <ero
2" positive
3" ne$ative
a" 1 only
b" 2 only
c" 3 only
d" 1, 2 and 3
Ans(e! b" 3 only
34" What problem is ca!sed by a loosely co!pled transormer in an )6 ampliierK ?:pril, 2**4A
a" a too narro% bandpass
b" over co!plin$
c" optim!m co!plin$
d" a too(%ide bandpass
Ans(e! a" a too narro% bandpass
30" &ormally, ho% are hi$h po%er t!bes testedK ?:pril, 2**4A
a" vis!ally
b" individ!ally
c" in their circ!it
d" !se portable testers
Ans(e! c" in their circ!it

PART 8-Elec Buk (Final)

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PART 8-Elec Buk (Final)

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PART 8

TRANSISTORS and AMPLIFIERS

J6-2+D(,9S6-2 transer characteristics

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