Two types of CCD image sensors for optical metrology and machine vision are described. The first sensor is a two-dimensional, synchronous detector / demodulator ("Lmk-In CCD") of spatially modulated light fields. The second sensor, the "convolver CCD," is capable of performing image acquisition and real-time, parallel convolution with an arbitrary kernel.
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Smart CCD image sensors for optical metrology and machine vision.pdf
Two types of CCD image sensors for optical metrology and machine vision are described. The first sensor is a two-dimensional, synchronous detector / demodulator ("Lmk-In CCD") of spatially modulated light fields. The second sensor, the "convolver CCD," is capable of performing image acquisition and real-time, parallel convolution with an arbitrary kernel.
Two types of CCD image sensors for optical metrology and machine vision are described. The first sensor is a two-dimensional, synchronous detector / demodulator ("Lmk-In CCD") of spatially modulated light fields. The second sensor, the "convolver CCD," is capable of performing image acquisition and real-time, parallel convolution with an arbitrary kernel.
Smart CCD Image Sensors for Optical Metrology and Machine Vision
T. Spirig, P. Seitz, 0. Vietze
Paul Schrerrer Institute Zurich Badenerstrasse 569, CH-8048 Zurich e-Mail: Thomas. Spirig @ psi.ch; Peter.Seitz@ psi.ch; Oliver.Vietze@ psi.ch Abstract -Two types of CCD image sensors are described. The first sensor is a two-dimensional, synchronous detector/demodulator (Lmk-In CCD) of spatially modulated light fields for applications in heterodyne interferometry and time-of-flight range imaging. Simultaneous measurements of amplitude, phase and background level are carried out at each pixel site. This is made possible by the principle of synchronized, periodic multi-tap sampling and photo charge accumulation. The second sensor, the Convolver CCD is capable of performing image acquisition and real-time, parallel convolution with an arbitrary kernel. Tap weight accuracies of typically 2% of the largest tap values have been obtained for a variety of linear filters that are commonly used in machine vision. The sensors have been realized by using a commercially available multi-project wafer CMOS/CCD process. For both sensors, the principle, design, operation and measurement results are presented and discussed. I. INTRODUCTION Charge-coupled devices (CCDs) are used in most of todays image sensing applications, although the primary motivation for their development was charge storage [I]. Soon, it became apparent that the CCD principle is also well suited for the processing of analog signals in the charge domain [2]. Using modem semiconductor technologies, it is possible to fabricate photosensors whose geometry and functionality are adapted to specific sensing tasks of various optical measurement techniques. In the present work, two types of such sensors are presented. The first type, called lock-in CCD, is a two dimensional array of pixels, each of which is a synchronous detectoddemodulator for spatially modulated light fields. This is made possible by a synchronous photo-charge detection and storage as proposed in an incomplete form with a modified CCD in Ref. [3]. The Lock-In CCD is described in Section 2. The second type of sensor, described in Section 3, is an image sensor capable of carrying out convolutions with arbitrary kemels during the exposure. The possibility of realizing such a device was initially suggested by Beaudet [4]. Both sensors have been realized using Orbits Foresight 2pm N-well CMOYCCD process [ 5] . In the concluding Section 4 the obtained results are discussed and possible applications are presented. 11. LOCK-IN CCD In typical image sensing applications a scene is optically projected onto the image sensor, which has to detect the local light intensity of an essentially stationary scene. There are circumstances, however, in which the sought information is not the local light intensity, but is encoded in a modulation parameter of an oscillating waveform. One might be interested in the local phase of the modulated light, the amplitude and the background illumination. The well-established measurement technique by which local phase, amplitude and offset of a sinusoidal electrical signal are measured, is called lock-in technique. Conventional synchronous detectors (lock-in detectors), often based on phase-locked loop (PLL) technology, are essentially restricted to the analysis of one temporal signal at a time. If modulated light is detected with 3 or more samples per period, its mean brightness level B (offset), phase cp and amplitude A can be determined unambiguously. Figure 1 illustrates the measurement principle for the so called four- bucket technique. The charge is integrated during 4 time intervals I1 to I4 of equal length At within one modulation period T. Four charge packets per pixel, ao to a3 are then obtained, which have to be stored at four different spatial locations. The charge signals a0 to a3 are converted into the At T Fig. 1 Measurement principle of the Lock-in CCD. During one modulation period, four charge packets *a3 are created by integrating thephoto-generated charge. With thesefour packets thephase9, theoffset B and &heamplitude A can bedetermined. (0-7803-2943-0) 11 sought amplitude A, phase cp. and mean brightness level B by using the relationships, described in Reference [6]. The architecture of one pixel is illustrated schematically in Figure 2. One pixel consists of a photo-gate (PG), a dump-gate (DG), a dump-diffusion (DD) and 4 transfer gates (TGo-TG3). In our implementation the area of the photogate is 10.5 pm x 41.5 pm. Two vertical four-phase CCD lines are located adjacent to each pixel. The four transfer-gates act as switchable connections between PG and the four-phase CCD. The four-phase CCD is covered by a metal layer in order to prevent charge smear during read out. Tests have been carried out using an image sensor with 10 x fo Fig. 2. Schematic layout of onepixel. It consists of a photo-gate (PG), four transfer-gates (TGo-TGs), a dump gate (DG) and a Dump diffusion (DD). Thechargepackets arestored under the gates fpB of thetwo adjacent CCD lines. 15 pixels, with a horizontal pitch of 92.75 pm and a vertical pitch of 80 pm. The operation occurs in two stages, signal integration and storage, followed by read out. During the signal integration phase, the modulated light intensity produces a modulated photo-current, which is integrated on the MOS capacitor of the photosite. Synchronously with the master oscillator this integrated charge is transferred and accumulated in one of the shielded storage sites by appropriately clocking the transfer gates and the photogate. The exposure time and the location where the signal charge is stored can be chosen by programming an appropriate clocking sequence. The pixel can be cleared, e.g. for shuttering operations, by pulsing the dump-gate high and the photo-gate low. The charge is then transported to the dump diffusion. In the read out phase, the electrodes of the line transfer CCD are clocked sequentially, transporting the four charge packets per pixel in shielded CCD lines to the output stage. The signal charge is converted to a voltage by use of a floating diffusion output stage with a single on-chip p- channel MOSFET acting as a source follower. The CCD has been tested using a light source with a modulated intensity. The center wavelength is at 630 nm and the beam was focused on the CCD as described in Reference [7] in more detail. The modulation frequency was chosen to be 100.4 kHz. This is a typical frequency for the intended application of the lock-in CCD in heterodyne interferometry. The charge was collected over 100 modulation periods. Figure 3 shows the measured phase vs. the true master oscillator phase for 12 different phases starting at (pmaster =0" and increasing with a step size of 30". An individual offset for all outputs per pixel was subtracted and the resulting signals were normalized. The r.m.s deviation of measured vs. true master oscillator phase was 3.1 degrees (relative phase error of 0.009). The relative deviation from true amplitude was 0.05. C 0.81 v - measured values l - average master oscillator phase [deg] Fig. 3. Amplitudemeasurements obtained with theLock-in pixel CCD, exposed to a sinusoidally oscillating LED light source. The modulation frequency was 100.4 kHz. The relative amplitude measurement deviation fromthe truemaster oscillator amplitude was 0.05. LI. CONVOLVER CCD Many signal and image processing functions are linear, i.e. one-or two dimensional convolutions with specific kemels [8]. The two-dimensional result of the convolution is determined as a linear combination of neighboring pixel intensities with suitable weights, as described in Reference An interpretation of the convolution is that the picture is shifted laterally in both dimensions and for each position the pixel values are multiplied with a different weight and accumulated to the sum, resulting in the new pixel value. As the CCD is capable of shifting charge laterally in two dimensions, this interpretation leads to a naturally parallel implementation of the convolution using a CCD. Theweighting can be realized by varying the exposure times for the different lateral shifts. This principle holds only for kemels with positive weights. The problem with negative weights can be solved by performing two convolutions each with only positive weights and performing the difference either on or off-chip. The convolution CCD consists of bidirectional CCD columns and bi-directional rows and at the intersections of rows and columns the ~71. 12 photosites are located. Each pixel has its own associated storage area, realized as an additive CCD column with separate gates in parallel to the main CCD column. In our implementation, the area of the photo-gates is 30 x 30 pm2 and the pixel pitch is 63 pm horizontally and 65 pm vertically leading to a fill factor of 22%. First tests have been performed with 16 x 16 pixels. The Point spread function (PSF) can be measured by illuminating a single pixel with a 20 pm diameter light spot. Four types of filters have been chosen, which are commonly used in machine vision. These are: (I) anisotropic Gaussian filters; (11) Canny filters (the first deviation of Gaussian filters); (111) Laplacian of Gaussian filters (LOG-filters) and (IV) quadrature pair filters (Gabor filters). A set of 7 x 7 filter coefficients was calculated for each of these four continuos functions. They were used to set the exposure times. As the image is a single spot, there is a direct correspondence between the calculated coefficients and the measured output voltage. To obtain a figure of accuracy, the image was offset corrected and normalized to fit the filter coefficients and an r.m.s. deviation is obtained. We found excellent correspondence between measured values and true filter values. Typical r.m.s. deviations from the ideal filter characteristics are between 1-2% of the largest kernel tap value. As an example the two-dimensional point spread function of a Laplacian of Gaussian filter is illustrated in Figure 4. The following three components contribute to the error: (1) The read-out noise of the output amplifier, (2) the dark current noise, a shot noise component that depends on the exposure time and (3) the non-ideal charge transfer efficiency (CTE). In our case, most of the error is attributed to the imperfections of our measurement technique, largely due to the non-linearity of the output stage. In addition filters without negative elements in their filter mask have slightly smaller r.m.s. errors since only one convolution was Fig. 4 Two-dimensional point spread function of a Laplacian of Gaussian filter measured with the convolution CCD. The r.m.s deviation of theobained point spread function fromthe ideal filter was less than 2%. performed and hence the exposure time for these filters was smaller. ILL DISCUSSION Two image sensors have been presented with on-chip signal processing capabilities. These sensors have been fabricated with a commercially available CMOSKCD process. The Lock-in CCD accurately measures the phase and the amplitude of light modulated at 100 kHz. This is ideal for the intended application in heterodyne interferometry, higher modulation frequencies are possible, since the charge coupled transfer principle has been demonstrated at frequencies up to 325 MHz in silicon [9]. Interesting applications for the convolver CCD are in real time object recognition using matched filter techniques. By providing two or more storage sites per pixel, it would be possible to perform two convolutions and hence to detect keypoints in real-time [lo]. Either sensor could also find application in motion detection due to its capability of storing two (convolver CCD) or four (Lock-in CCD) successive pictures before readout. It is noted that spatial resolution of the CCDs, i.e. the modulation transfer function (MTF) is degraded due to carrier diffusion in the semiconductor sensor Ell], [12]. Light with a long wavelength produces a large penetration depth of the photons in the semiconductor, leading to a larger cross-talk and hence a reduced spatial resolution for the convolver CCD and a significantly reduced dynamic range for measurements with the lock-in CCD. The presented CCD structures offer an interesting alternative to the active pixel sensors ( APS) , where the signal processing is performed with a conventional CMOS circuitry. The CCD approach has the advantage that the signal processing is carried out in the charge domain, without any noise contributions from the device other than dark noise. The novel device structures presented here are merely an example of possibilities that CCD processing has to offer in the field of optical metrology and machine vision. ACKNOWLEDGEMENT We gratefully acknowledge the invaluable help from many people at the Paul Scherrer Institute in Zurich. Special thanks goes to M.Kuhn, who provided the design and the realization of the optical setup, ro P.Metzler, who designed and fabricated the trapezoidal clock drivers and to J.M. Raynor for his invaluable help with analog and digital electronic problems. We would also acknowledge stimulating discussions with0.Kubler and F.Heitger at the Federal Institute of Technology (ETH) Zurich. This work was supported in part by the Swiss priority programme Optique, project number 524. 13 REmRENCES [41 [71 W.S. Boyle and G.E. Smith, Charge Coupled Semiconductor Devices, Bell Syst. Tech. Jour., Vol. C.H. Shui n and M.F. Tompsett, Charge Transfer Devices, Academic Press, Inc., New York, 1975. H.Pove1, H. Aebersold and J.O. Stenflo, Chargcoupled device image sensor as a demodulator in a 2-D polarimeter with a piezoelastic modulator, Applied Optics, Vol. 29, pp. 1186-1190, 1990. P.R.Beaudet, Time and Space Multiplexing Focal Plane Convolvers, Proc. SPZE, Vol. 107 1, pp. 90-99, 1989. 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