- Rayyan Sayeed 1MS12EC098 Variation of Design Metrics In the field of VLSI circuit, the scaling down or the decrease in size of the semiconductors has happened roughly at an exponential rate. This has in turn has resulted in a significant increase in the density of the circuits on the chip. At the nanometer level, due to the effects of manufacturing process variations, the design optimization process has transitioned from the deterministic domain to the stochastic domain, and the inter-relationships among the specication parameters like delay, power, reliability, noise and area have become more intricate. ITRS The International Technology Roadmap for Semiconductors, known throughout the world as the ITRS, is the fifteen-year assessment of the semiconductor industrys future technology requirements. These future-needs drive present-day strategies for world-wide research and development among manufacturers research facilities, universities, and national labs. Technology Nodes over the past years and Moores Law We can see the technology nodes over the past years and draw an inference that the Semiconductor VLSI technology is roughly following the Moores law. Moores law basically states that the number of transistors in a dense integrated circuit doubles approximately every two years. The law is named after Gordon E. Moore, co-founder of the Intel Corporation.
Year Technology Node 1971 10 m 1974 6 m 1977 3 m 1982 1.5 m 1985 1 m 1989 800 nm 1994 600 nm 1995 350 nm 1997 250 nm 1999 180 nm 2001 130 nm 2004 90 nm 2006 65 nm 2008 45 nm 2010 32 nm 2012 22 nm 2014 14 nm
Using Moores law we can hence predict the technologies for the coming years and determine the technology node. 2016 10 nm 2018 7 nm 2020 5 nm
5 nm by 2020!!!! Transistor Count As the size of the transistor reduces it is quite obvious that we find the no. of transistors to increase. And yet again Moores law comes into picture. So we see that the count of transistors has increased drastically. In 1971 the count had been around 2000 In 2011 the transistor count increased to 2.6 billion!!!! Although this trend has continued for more than half a century, Moore's law should be considered an observation or conjecture and not a physical or natural law. Sources in 2005 expected it to continue until at least 2015 or 2020. However, the 2010 update to the International Technology Roadmap for Semiconductors predicted that growth will slow at the end of 2013, when transistor counts and densities are to double only every three years. Chip Size In a similar manner, extending Moores law to the feature size as well
Frequency trend
Making of Transistors over the past Years
NPN (discrete) Transistor Fabrication The first step is the selection of an n-type wafer this will act as the collector of the device. The wafer must be heavily doped (N D ~ 10 26 m -3 ) in order to reduce the series resistance of the collector. A lightly-doped n-type epitaxial layer is then grown on the surface to increase the reverse-breakdown voltage at the collector-base junction, which is reverse biased under normal operation. (The breakdown voltage of a p-n junction decreases as the doping on either side increases.) Then processes such as Photo-Lithography, MASKING, and etching are carried out to fabricate the rest NMOS Fabrication A layer of silicon di oxide (SiO2) typically 1 micrometer thick is grown all over the surface of the wafer to protect the surface, acts as a barrier to the dopant during processing, and provides a generally insulating s ubstrate on to which other layers may be deposited and patterned. The surface is now covered with the photo resist which is deposited onto the wafer and spun to an even distribution of the required thickness. The photo resist layer is then exposed to ultraviolet light through masking which defines those regions into which diffusion is to take place together with transistor channels. Assume, for example, that those areas exposed to UV radiations are polymerized (hardened), but that the areas required for diffusion are shielded by the mask and remain unaffected. Thick oxide (SiO2) is grown over all again and is then masked with photo resist and etched to expose selected areas of the poly silicon gate and the drain and source areas where connections are to be made. (Contacts cut) The whole chip then has metal (aluminum) deposited over its surface to a thickness typically of 1 micro m. This metal layer is then masked and etched to form the required interconnection pattern. Multi-Gate Devices The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multi-gate device employing independent gate electrodes is sometimes called a Multiple Independent Gate Field Effect Transistor (MIGFET). FinFET In the technical literature, FinFET is used somewhat generically to describe any fin-based, multi- gate transistor architecture regardless of number of gates. The distinguishing characteristic of the FinFET is that the conducting channel is wrapped by a thin silicon "fin", which forms the body of the device. The thickness of the fin (measured in the direction from source to drain) determines the effective channel length of the device. Gate-all-around (GAA) FET Gate-all-around FETs are similar in concept to FinFETs except that the gate material surrounds the channel region on all sides. Depending on design, gate-all-around FETs can have two or four effective gates. Gate- all-around FETs have been successfully built around a silicon nanowire and etched InGaAs nanowires. Tri-gate FETs These transistors employ a single gate stacked on top of two vertical gates allowing for essentially three times the surface area for electrons to travel. Intel reports that their tri-gate transistors reduce leakage and consume far less power than current transistors. This allows up to 37% higher speed, or power consumption at fewer than 50% of the previous type of transistors used by Intel. Intel was the first company to announce this technology.
ASIC Design Flow
We can broadly classify the ASIC flow design as FRONT end and BACK end. The back end process is carried out by the Tool. The front end process is controlled by the user and the process here can be optimized greatly. SPECIFICATION: Specication is the most important portion of an ASIC design ow.In thi s step, the features and functionalities of an ASIC chip are dened. Chip planning is also performed in this step. During this process, architecture and microarchitecture are derived from the required features and functionalities. ARCHITECTURAL DESIGN: Based on the functional specifications and design goals, the top level, block level architecture would be design on hierarchy. The dened architecture must take into consideration all required timing, voltage, and speed/performance of the design. Architectural simulations need to be performed on the drafted architecture to ensure that it meets the required specication. SYNTHESIS: Synthesis is actually a process wherein Source code, .synth scripts, and DESIGN CONSTRAINTS are inputs to the process. And the outputs would be Reports & Bugs, Design Database, And the Gate level Verilog Description. PLACEMENT: Each block is allocated its respective place in the floor and optimization is done. CLOCK TREE SYNTHESIS: The clock skews the delays that need to be taken care of and all these tasks are done in clock tree synthesis. DFT: Design For testability is the test done on the logic blocks. For example, the test of flip-flops is done through Muxes. And using scan inserted net-list files, and tested again if bugs are found. FLOOR PLANNING & POWER PLANNING: Basically work for the optimization of the given logic based on the power consumption and also the position of each block of logic, based on its interconnection with other blocks of logic.
VLSI beyond Moores Law Moore's Law makes things useful. By increasing the number of transistors on integrated circuits to several billions and reducing their size to mere nanometers, engineers can produce ever-faster microprocessors that are the same size, or even smaller, than the ones in today's computers. At the same time, Moore's Law increases efficiency and reduces costs of production. Moore's Law makes things useful. By increasing the number of transistors on integrated circuits to several billions and reducing their size to mere nanometers, engineers can produce ever-faster microprocessors that are the same size, or even smaller, than the ones in today's computers. At the same time, Moore's Law increases efficiency and reduces costs of production. In addition to this I also read an article which was quite interesting and seemed very apt for the Beyond Moores Law topic. Crossbar nanowire chips combine to form tiny CPU for beyond- Moores-law electronics: As transistor technology continues its march forward with smaller, faster components, were getting ever closer to the point at which the realities of atomic scale will put an end to Moores law unless we find a way around it. A team of researchers from Harvard and non- profit research company Mitre have devised a possible solution to the problem using nanowires as a stand-in for traditional transistors in tiny processors. The device created in the lab is by no means a match for modern computer processors, but it is built on a completely new process. The chip designed by chemist Charles Lieber and his team uses germanium core nanowires just 15 nanometers wide. The wires themselves are coated in silicon and are laid out in parallel on a silicon dioxide substrate. Embedded in the surface of the chip is a network of chromium and gold contacts, but these run the opposite way, creating a crisscross pattern. Each of the points in the chip where the nanowire crosses the embedded contacts can act as a programmable transistor node. Applying voltage to the nanowires toggles them between on and off. The researchers call this a crossbar array. Study of ITRS Road map The objective of the ITRS is to ensure cost-effective advancements in the performance of the integrated circuit and the advanced products and applications that employ such devices, thereby continuing the health and success of this industry. The sponsoring organizations are the European Semiconductor Industry Association, the Japan Electronics and Information Technology Industries Association, the Korean Semiconductor Industry Association, the Taiwan Semiconductor Industry Association, and the United States Semiconductor Industry Association. With the progressive externalization of production tools to the suppliers of specialized equipment, the need arose for a clear roadmap to anticipate the evolution of the market and to plan and control the technological needs of IC production. For several years, the Semiconductor Industry Association (SIA) gave this responsibility of
coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). (b) ITRS Table StructureKey Lithography-related Characteristics by Product Type
Manufacturable solutions exist, and are being optimized Manufacturable solutions are known Interim solutions are known Manufacturable solutions are NOT known Source: 2003 ITRS, Tables A, B, and 19, 1, 7, 124.
Basic Linux Commands mkdir This command is used to create a new directory or simply a new folder inside the folder of the current path Syntax: mkdir folder_name Example: $ mkdir ADLD cd This command is basically used to change our working directory. The directory name specified should have been created already. Syntax: cd folder_name Example: cd SIM cd ~ This is used to go to the root folder directly cd .. This command is used to go the parent folder of the current working directory vi vi basically opens the text editor after creating the file specified. The file will be open for editing once the insert / I key is pressed. Syntax: $ vi file_name.extension Example: $ vi file.v :q! Is used to exit the editor without saving the current file. Command basically works after Escape key is pressed. :wq! Is used to write into the file and then quit it. Command basically works after Escape key is pressed. :x executes the file and then quit. Command basically works after Escape key is pressed. cp Command to copy file1 to file2 preserving the mode, ownership and timestamp. $ cp -p file1 file2 Copy file1 to file2. if file2 exists prompt for confirmation before overwriting it. $ cp -i file1 file2 mv command to rename file1 to file2. if file2 exists prompt for confirmation before overwriting it. $ mv -i file1 file2 $ mv -v will print what is happening during file rename. ls This command lists out all the files in the working directory, and lists the information of the files. Usage can be made anywhere. ls a lists out even the hidden files and folders in the working directory. cat The most common use of cat is to read the contents of files, and cat is often the most convenient command for this purpose. Syntax: cat file_name Example: cat file1 cat file1 > file2 the output from cat is written to file2 instead of being displayed on the monitor screen. cat >file.extension This commands creates the file with the extension and also enables the user to write into it at the same time. cat file1 file2 >file3 The contents of file1 and file2 will be copied into file3, with the contents of file2 after file2. pwd This is a quite helpful command which gives the path of the working directory
References: Wikipedia, couple of journals, ITRS website..