Symbol 10 Sec Steady State

V
DS
V
GS
-12 -9.2
-10 -7.4
I
DM
I
AR
E
AR
3.1 1.7
2.0 1.1
T
J
, T
STG
Parameter Symbol Typ Max
t 10s 32 40
Steady State 60 75
Steady State R
JL
17 24
C -55 to 150
W
25
-60
26
101
A
mJ
V
V
Maximum Junction-to-Lead
C
C/W
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
C/W
Maximum Junction-to-Ambient
A
C/W
R
JA
Drain-Source Voltage
Pulsed Drain Current
B
-30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Continuous Drain
Current
A
Units Parameter
T
A
=25C
T
A
=70C
Junction and Storage Temperature Range
T
A
=70C
I
D
Gate-Source Voltage
P
D
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
G
Power Dissipation
A
T
A
=25C
G
S
S
S
D
D
D
D
AO4407A
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
= -30V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 11m (V
GS
= -20V)
R
DS(ON)
< 13m (V
GS
= -10V)
R
DS(ON)
< 38m (V
GS
= -10V)
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!
General Description
The AO4407A uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. Standard Product
AO4407A is Pb-free (meets ROHS & Sony 259
specifications).
G
D
S
SOIC-8
Top View
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
www.DataSheet4U.com
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
AO4407A
Symbol Min Typ Max Units
BV
DSS
-30 V
-10
T
J
= 55C -50
I
GSS
100 nA
V
GS(th)
-1.7 -2.3 -3 V
I
D(ON)
-60 A
8.5 11
T
J
=125C 11.5 15
10 13
27 38
g
FS
21 S
V
SD
-0.7 -1 V
I
S
-3 A
C
iss
2060 2600 pF
C
oss
370 pF
C
rss
295 pF
R
g
2.4 3.6
Q
g
30 39 nC
Q
gs
4.6 nC
Q
gd
10 nC
t
D(on)
11 ns
t
r
9.4 ns
t
D(off)
24 ns
t
f
12 ns
t
rr
30 40
ns
Q
rr
22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.25,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
m
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-12A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
= -5V, I
D
= -10A
I
S
= -1A,V
GS
= 0V
V
DS
= -5V, I
D
= -10A
V
GS
= -10V, I
D
= -12A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS A
Gate Threshold Voltage V
DS
= V
GS
I
D
= -250A
V
DS
= -30V, V
GS
= 0V
V
DS
= 0V, V
GS
= 25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-12A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
= -250A, V
GS
= 0V
V
GS
= -10V, V
DS
= -5V
V
GS
= -20V, I
D
= -12A
Reverse Transfer Capacitance
I
F
=-12A, dI/dt=100A/s
A: The value of R
JA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. E
AR
and I
AR
ratings are based on low frequency and duty cycles to keep T
j
=25C.
Rev3: Jan 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
www.DataSheet4U.com
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
20
40
60
80
0 1 2 3 4 5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-
I
D

(
A
)
-5V
-6V
-10V
-4.5V
-4V
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
I
D
(
A
)
25C
125C
V
DS
= -5V
0
10
20
30
40
0 4 8 12 16 20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(
O
N
)

(
m

)
V
GS
=-10V
V
GS
=-5V
V
GS
=-20V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
I
S

(
A
)
25C
125C
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
5
10
15
20
25
30
3 4 5 6 7 8 9 10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(
O
N
)

(
m

)
I
D
=-12A
25C
125C
V
GS
= -3.5V
V
GS
=-20V
I
D
=-12A
V
GS
=-10V
I
D
=-12A
V
GS
=-5V
I
D
=-10A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
www.DataSheet4U.com
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F
=-6.5A, dI/dt=100A/s
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
V
G
S

(
V
o
l
t
s
)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
iss
C
oss
C
rss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
P
o
w
e
r

(
W
)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Z

J
A

N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
(Volts)
-
I
D

(
A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
100ms
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
10s
V
DS
=-15V
I
D
=-12A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=75C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
www.DataSheet4U.com
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/