MMP60R360P Datasheet

Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 1

Parameter Value Unit
V
DS
@

T
j,max
650 V
R
DS(on),max
0.36
V
TH,typ
3 V
I
D
11 A
Q
g,typ
28 nC

























Order Code Marking Temp. Range Package Packing RoHS Status
MMP60R360PTH 60R360P -55 ~ 150

TO-220 Tube Halogen Free


MMP60R360P
600V 0.36 N-channel MOSFET
Description

MMP60R360P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Features

Low Power Loss by High Speed Switching and Low On-Resistance

100% Avalanche Tested

Green Package Pb Free Plating, Halogen Free
Key Parameters
Ordering Information
Applications

PFC Power Supply Stages

Switching Applications

Adapter

Motor Control

DC DC Converters

D
G
S
G
D
S
Package & Internal Circuit

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 2



Parameter Symbol Rating Unit Note
Drain Source voltage V
DSS
600 V
Gate Source voltage V
GSS
30 V
Continuous drain current I
D

11 A T
C
=25
6.95 A T
C
=100
Pulsed drain current
(1)
I
DM
33 A
Power dissipation P
D
83 W
Single - pulse avalanche energy E
AS
220 mJ
MOSFET dv/dt ruggedness dv/dt 50 V/ns
Diode dv/dt ruggedness dv/dt 15 V/ns
Storage temperature T
stg
-55 ~150
Maximum operating junction
temperature
T
j
150
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS




Parameter Symbol Value Unit
Thermal resistance, junction-case max R
thjc
1.5 /W
Thermal resistance, junction-ambient max R
thja
62.5 /W















Thermal Characteristics
Absolute Maximum Rating (T
c
=25 unless otherwise specified)

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 3



Parameter Symbol Min. Typ. Max. Unit Test Condition
Drain Source
Breakdown voltage
V
(BR)DSS
600 - - V V
GS
= 0V, I
D
=0.25mA
Gate Threshold Voltage V
GS(th)
2 3 4 V V
DS
= V
GS,
I
D
=0.25mA
Zero Gate Voltage
Drain Current
I
DSS
- - 1 A V
DS
= 600V, V
GS
= 0V
Gate Leakage Current I
GSS
- - 100 nA V
GS
= 30V, V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
- 0.32 0.36 V
GS
= 10V, I
D
= 3.8A




Parameter Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance C
iss
- 890 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 670 -
Reverse Transfer Capacitance C
rss
- 40 -
Effective Output Capacitance
Energy Related
(3)

C
o(er)
- 26 -
V
DS
= 0V to 480V,
V
GS
= 0V,f = 1.0MHz
Turn On Delay Time t
d(on)
- 18 -
ns
V
GS
= 10V, R
G
= 25,
V
DS
= 300V, I
D
= 11A
Rise Time t
r
- 40 -
Turn Off Delay Time t
d(off)
- 80 -
Fall Time t
f
- 30 -
Total Gate Charge Q
g
- 28 -
nC
V
GS
= 10V, V
DS
= 480V,
I
D
= 11A
Gate Source Charge Q
gs
- 7 -
Gate Drain Charge Q
gd
- 10 -
Gate Resistance R
G
- 3.5 - V
GS
= 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS








Static Characteristics (T
c
=25 unless otherwise specified)
Dynamic Characteristics (T
c
=25 unless otherwise specified)

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 4



Parameter Symbol Min. Typ. Max. Unit Test Condition
Continuous Diode Forward
Current
I
SD
- - 11 A
Diode Forward Voltage V
SD
- - 1.4 V I
SD
= 11 A, VGS = 0 V
Reverse Recovery Time t
rr
- 375 - ns
I
SD
= 11 A
di/dt = 100 A/s
V
DD
= 100 V
Reverse Recovery Charge Q
rr
- 4.1 - C
Reverse Recovery Current I
rrm
- 21.8 - A







































Reverse Diode Characteristics (T
c
=25 unless otherwise specified)

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 5

Characteristic Graph


MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 6

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 7


MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 8


V
DS
10V
1mA
DUT
100K
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K

V
gs
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on) t
r
t
on
T
d(off) t
f
t
off
V
DD
t
p t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit Fig18-2. Unclamped inductive waveform
R
g
25


Test Circuit

MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 9

Physical Dimensions

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

























































MMP60R360P Datasheet
Jun. 2013 Revision 1.1 MagnaChip Semiconductor Ltd. 10



















































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generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
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MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.