Impedance Transformation and Impedance Matching

1
August 2007 2006 by Fabian Kung Wai Lee 1

3A. Impedance
Transformation and
Impedance Matching
The information in this work has been obtained from sources believed to be reliable.
The author does not guarantee the accuracy or completeness of any information
presented herein, and shall not be responsible for any errors, omissions or damages
as a result of the use of this information.
References
[1] R. Ludwig, P. Bretchko, RF circuit design - Theory and
applications, 2000 Prentice-Hall.
[2] D.M. Pozar, Microwave engineering, 2nd edition, 1998 John-
Wiley & Sons (3
rd
edition, 2005 by John-Wiley & Sons is also
available).
[3] R.E. Collin, Foundation for microwave engineering, 2nd edition,
1992, McGraw-Hill.
2
1.0 Lumped Impedance
Transformation Network
Impedance Transformation
Z
L
Z
s
Transformation
Network
An impedance transformation network is a two-port network that when
connected in series with an impedance Z
L
at one port, will result in Z
s
being seen on another port.
Z
L
is usually not equal to Z
s
(otherwise there will be no need for
transformation). Z
s
is known as the image impedance of Z
L
.
We immediately notice that the transformation network is a 2-port
network.
3
Why Impedance Transformation is
Needed?
Maximum power is delivered when load is matched to the Tline
(assuming generator is matched).
Impedance matching on sensitive receiver components (antenna, low-
noise amplifier etc.) improves the signal-to-noise ratio of the system.
Impedance matching in a power distribution network (such as antenna
array feed network) will reduce amplitude and phase errors.
The Theory of Maximum Power
Transfer
Z
s
Z
L
V
s
I
L
V
L
L L L
s s s
jX R Z
jX R Z
+ =
+ =
{ }
*
2
1
Re
L L L
I V P =
Time averaged power dissipated across
load Z
L
:
L s
s
L s
L s
Z Z
V
L
Z Z
Z V
L
I V
+ +
= =
( ) ( )
2 2
2
2
1
2
2
2
1
*
2
1
Re Re
L
X
s
X
L
R
s
R
L
R
s
V
L
L
Z
s
Z
L
Z
s
V
L
Z
s
Z
s
V
L
Z
s
Z
L
Z
s
V
L
P
P
+ + +
+
+ +
=
\
|
=
( )
L L L L
X R P P , =
0 = =
L
L
L
L
X
P
R
P
Letting
We find that the value for R
L
and X
L
that would maximize P
L
is
R
L
= R
s
, X
L
= -X
s
.
In other words: Z
L
= Z
s
*
To maximize power transfer to the load
impedance, Z
L
must be the complex
conjugate of Z
s
, a notion known as
Conjugate Matched.
where
4
~
Z
o
R
S
~
Det
50 50 50 50 50 50 50 50 50 50
Impedance Transformation and
Matching
An example of a RF system where every modules are internally
matched to 50
Standardizing to a fixed impedance simplifies
system design, as each module can be replaced
with module of similar functions and we can be assured
the power flow along the path is not affected.
Types of Transformation Network
Single lumped element (either L or C)
Dual lumped elements (L impedance matching network)
Triple lumped elements (Pi or T impedance matching network)
More lumped elements (ladder type)
Distributed elements (consists of section of Tlines)
Hybrid - Consists of both Tline and lumped elements
5
Impedance Transformation Using
Lumped Elements
Lumped components such as surface mounted device (SMD) inductor
and capacitor can be easily purchased nowadays.
SMD capacitors have a range from 0.47pF to greater than 10000pF.
With tolerance less than 5% and operating temperature between -
55
o
C to 125
o
C.
SMD inductors have a range from 1.0nH to greater than 4000nH.
With tolerance from 2% to 10%, operating temperature from -40
o
C
to 125
o
C and Q factor from a minimum of 15 to greater than 45.
The inductors come in a variety of form, from coil-type, thin-film, to
spiral inductors mounted in SMD package. Self-resonance frequency
ranges from 200MHz to greater than 5GHz for L<100nH (thin-film).
Ultra High Frequencies Passive
Components (>250MHz)
Other sizes from
JEDEC Solid State
Technology Association
- 0402, even smaller
than 0603.
- 1210, bigger than
0805.
-Nowadays there are
also 0201 and 01005
Multilayer electrolytic
capacitor (1812)
Aluminium oxide 0805
80mils
50mils
Thin film inductor
(0603)
Coil inductor
(0805)
Thick film
resistor
Multilayer ceramic capacitor
(0603), NPO dielectric
(0805)
(1210)
(1210),
Y5V dielectric
(0603),
NPO dielectric
6
Medium Frequency Passive
Components (up to 250MHz)
Coil inductor
with Ferrite core
Multilayer
ceramic capacitor
Coil inductor
with air core
Carbon/metal
film resistor
Deposited carbon film,
or semiconductor
Low resistance High resistance
Resistors
Interdigital Capacitor
Series Single-Loop Spiral Inductor
Series Multi-Loop Spiral Inductor
Air Bridge
Shunt Multi-Loop Spiral Inductor
Via
Microstrip Line
Metal-Insulator-Metal (MIM)
Capacitor
High
r
dielectric
Passive Lumped Components for
Incorporation into PCB and other Substrates
Add the corresponding schematics for these
7
Z
L
= R
L
+ jX
L
jX
Z
s
= Z
L
+ jX
Z
L
2 port network
Single Lumped Element
Transformation Network (1)
Z
L
= R
L
+ jX
L
jB
Y
s
= Y
L
+ jB
Z
L
2 port networks
Single Lumped Element
Transformation Network (2)
8
jX
jB
R
L
+ jX
L
( ) X X j R
jB
Z
Y
L L s
s
+ +
+ = =
1 1
( )
X R X R X R
R R
B
X
R
R
R R R X X
s s L L s
L s
s
s
L
L s L L
+ +
=
+ =
2
If Z
s
= R
s
+ jX
s
is given,
we could solve for X and
B by equating the real and
imaginary parts of the above expression:
This configuration
is only applicable
for R
s
> R
L
(1.1)
Dual Lumped Elements Transformation
Network (1)
R
L
+ jX
L
jX
jB L L
s
jX R
jB
jX Z
+
+
+ =
1
1
( )
X R X R X R
R R
B
X
R
R
R R R X X
L L s s L
L s
L
L
s
s L s s
+
=
+ =
2
If Z
s
= R
s
+ jX
s
is given,
again we could solve for
X and B by equating the
real and imaginary parts
of the above expression:
This configuration
is only applicable
for R
L
> R
s
(1.2)
Dual Elements Transformation
Network (2)
9
Example 1.1
Transform Z
L
=100 + j80 to 50 + j40 at 410MHz.
( )
014 . 0
498 . 115
2
=
+
=
= + + =
X R X R X R
R R
B
X
R
R
R R R X X
L L s s L
L s
L
L
s
s L s s
Since B is +ve, a capacitor can be used to realize it:
( )
nH
X
L 83 . 44
10 410 2
6
=
Since X is +ve, an inductor can be used to realize it:

( )
pF
B
C 468 . 5
10 410 2
6
=
R
L
>R
s
Synthesizing Reactance (X) and
Susceptance (B) Using Lumped Elements
For X:
For B
X > 0 : Use inductor to synthesize it.
L
X < 0 : Use capacitor to synthesize it.
C
o
f
X
o
X
o
L
jX L j

2
= =
=
X
o
f X
o
C
o
C
o
j
C
jX j

2
1 1
1 1
= =
=
|
\
|
=
B > 0: Use capacitor to synthesize it.
C
o
f
B
o
B
C
2
= =
B < 0: Use inductor to synthesize it.
L B
o
f B
o
L
2
1 1
= =
10
Example 1.1 Cont...
The final schematic:
100+j80
50+j40
At 410MHz Only!
44.83nH
5.47pF
Exercise
Transform Z
L
= 50 + j100 to 300 - j10 at 900MHz using 2 lumped
element matching networks.
11
Example 1.2
Repeat Example 1.1 using Smith chart.
Exercise 2
Repeat Example 2 using Smith chart.
12
2.0 Nodal Q-Factor and
Approximate Bandwidth of
Network
44.83nH
100
Z
s
= 50+j40
at 410MHz
5.47pF
Z
L
31.05nH
I
V
s
V
Bandwidth of the Matching Network (1)
Suppose in Example 1.1 the load Z
L
is actually given by an inductor in
series with a resistor, so that at 410MHz we obtain Z
L
= 100+j80.
We input the above schematic in a circuit simulator (PSPICE) and run
a frequency sweep (change the frequency of the source V
s
while
measure I & V) from 100MHz to 800MHz.
13
Re(Z
s
)
Im(Z
s
)
We see that the matching
network only transform Z
L
to 50+j40 at 410MHz, at other
frequencies, Z
s
gradually
deviates from the desired
value.
410MHz
Within a range of frequencies near to the operating frequency f
o
=
410MHz, Z
s
= R
s
+ jX
s
is quite near the desired value. We will call this
range of frequency the bandwidth (BW) of the transformation network.
|Z
s
| and Arg(Z
s
) is very close to
the pattern of series RLC circuit
near operating frequency f
o
To examine this closer, we plot Z
s
in terms of its magnitude and
phase.
|Z
s
|
Arg(Z
s
)
271.76MHz
4 . 90 2
o
Z
=
=
9 . 63
410
o
o
Z
MHz f
Following the theory
of series RLC
network, we define
the 3dB BW as the
range of freq. Where
|Z
s
| is less than
, where Z
o
is the
magnitude of the
impedance at the
operating freq.
f
o
= 410MHz.
We see that the
measured BW is:
BW = 271.76MHz
o
Z 2
14
44.83nH
100
Z
s
= 50+j40
at 410MHz
5.47pF
Z
L
31.05nH
jX
jB
X=115.498, B=0.014
Z
L
=
100+j80
jX
X=115.498
Y = G + jB
0.0061+j0.0091
or
Z = 50.06-j75.50
5 . 1
06 . 50
50 . 75
'
'
0061 . 0
0091 . 0
'
'
= = = =
R
X
G
B
Q
n
Now consider the circuit of Example 1.1 again. We could compute a
quantity known as the Nodal Q factor, Q
n
as follows:
Last element
Compute the impedance or admittance
without the last element of the network
We could calculate the BW of the system using the equation in (1.4):
Surprisingly this is quite near the measured value using simulation. Both
measured and calculated BW using this method will match even closer if
Z
s
is real, or X
s
=0. This applies to all lumped element transformation
network as well (3 elements or more).
When X
s
is not 0, there is an error, the larger |X
s
|, the greater the error.
However this does illustrate that we could in general compare the BW of
various transformation network merely by calculating Q
n
.
Generally high Q
n
denotes narrow BW, low Q
n
denotes wide BW.
MHz
MHz
Q
f
BW
n
o
273
5 . 1
410
=
271.76MHz
15
Nodal Q Factor, Q
n
(1)
jX
2
jX
1
jB
1
Z
L
Z = R +jX
Y = G +jB
jX
1
jB
1
Z
L
Z = R +jX
Y = G +jB
Q
n
for a few favorite transformation networks.
'
'
'
'
R
X
G
B
Q
n
= =
jX
1
jB
2
Z
L
Z = R +jX
Y = G +jB
jB
1
TL
1
jB
1
Z
L
Z = R +jX
Y = G +jB
Nodal Q Factor, Q
n
(2)
The previous slides only illustrate the concept of using nodal Q factor
to estimate and compare bandwidth between transformation networks
heuristically. A more formal argument and derivation can be found
from various materials:
R. Ludwig, P. Bretchko, RF circuit design - Theory and
applications, 2000, Prentice-Hall.
J.R. Smith,Modern communication circuits, 2nd edition 1998,
McGraw-Hill.
EEN3096 (Communication Electronics) notes, year 2006 of MMU.
Unpublished works of F. Kung, 2003.
16
Example 2.1
Transform the load Z
L
= 200 - j40 to 50 + j20 at 2.4GHz. Find the
nodal Q factor and estimate the bandwidth of the circuit. Use Smith
chart to aid the design.
Z
s
Z
L
Z
X=109.2
Z
L
=200-
j40
Z
s
=50+j20
B=0.00756
jX
jB
B X
764 . 1
58 . 50
23 . 89
= =
n
Q
GHz
GHz
BW 36 . 1
764 . 1
4 . 2
= =
nH L 24 . 7
) 10 4 . 2 ( 2
2 . 109
9
=
pF C 50 . 0
) 10 4 . 2 ( 2
00756 . 0
9
=

Constant Q
n
Circles (1)
Given a certain Q
n
, we can find the locus or curve of the
corresponding impedance point on the Smith Chart. It turns out this
locus is a circle, known as Constant Q
n
Circle.
Q
n
depends on the point location on the Smith chart. We could joint
all points on the Smith chart giving a similar Q
n
to form a curve or
locus. It happens that this locus is a circle, known as Constant Q
n
circles.
The center and radius for the circles can be derived as follows.
From the theory on Smith chart:
( ) ( )
2 2 2 2
2 2
1
2
1
1
1
1
V U
V
j
V U
V U
jV U
jV U
jx r
+
+
+

=

+ +
= +
2 2
1
2
V U
V
r
x
Q
n

= = 2
2
2
1
1
1
n
n Q
Q
V U + =
|
|
\
|
+
2
1
1
1
0
n
n
center
Q
Radius
Q
j
+ =
= m
(2.1)
r
x
17
Constant Q
n
Circles (2)
Q
n
=1.0
Q
n
=1.0
Q
n
=0.5
Q
n
=0.5
Q
n
=3.0
Q
n
=3.0
Q
n
Radius Center
0.5 2.2360 0j2.000
1.0 1.4142 0j1.000
2.0 1.1180 0j0.500
3.0 1.0541 0j0.333
5.0 1.0198 0j0.200
Limitation of 2 Lumped Elements
Network
By now it is obvious of the limitation of the 2 elements network. For
instance in Example 3 there are only two ways to transform Z
L
= 200 -
j40 to Z
s
= 50 + j20.
Therefore we cannot control the nodal Q factor of 2 elements network,
it is determined by the values of Z
L
and Z
s
.
Using an extra element, we have extra degree of freedom and we can
control the value of Q
n
in addition to performing impedance
transformation/matching. This is the advantage of using the T or Pi
networks.
18
Three or More Lumped Elements
Transformation Network
For more than 3 lumped elements, analytical method such as shown
in previous slides is very cumbersome to apply.
It is easier to perform 3 elements transformation network design with
the aid of Smith Chart.
As oppose to 2 elements network, 3 or more elements network does
not suffer from blind spot. It can transform any passive load Z
L
to any
required impedance value.
Example 2.2
Repeat Example 2.1 using 3 elements impedance transformation
network, either T or Pi, with the aid of Smith chart. It is required that Q
n
be equal to 3. (Z
L
= 200-j40, Z
s
= 50+j20 at f
o
= 2.4 GHz).
Z
L
jX
2
jX
1
jB
1
Z
X
1
= 294.0
B
1
= 0.0083
X
2
= 174.6
Q
n
=3
Q
n
=3
B
1
X
1
X
2
Z
L
1
= 19.5nH
C
1
= 0.55pF
L
2
= 11.58nH
Z
s
19
Example 2.3
Repeat Example 2.2 using 3 elements transformation network, either T
or Pi, with the aid of Smith chart. It is required that Q
n
be equal to 5.
(Z
L
=200-j40, Z
s
=50+j20 at 2.4 GHz).
Z
L
jX
2
jX
1
jB
1
Z
X
1
= 488.6
B
1
= 0.00584
X
2
= 261.0
L
1
= 32.4nH
C
1
= 0.387pF
L
2
= 17.3nH
Z
s
Q
n
=5
Q
n
=5
B
1
X
1
X
2
Z
R
s
R
s
X
s
X
s
Q
n
=3
Q
n
=5
Both circuits from Example
4 and 5 are fed into PSPICE.
AC simulation is run from
1.8GHz to 2.8GHz and the
results are compared. It is
seen that the T network with
higher nodal Q factor has
narrower BW, characterized by
more rapid deviation from
f
o
= 2.4GHz.
Resonance
Frequency
Z
s
Versus f from PSPICE Simulation
20
Exercise
Repeat Example 2.3 using 3 elements T transformation network, with
the aid of Smith chart. It is required that Q
n
be equal to 1. (Z
L
=200-
j40, Z
s
=50+j20). Can you synthesize the T network? Suggest a
solution to this.
Exercise
Repeat Example 2.3 using 3 elements Pi transformation network, with
the aid of Smith chart. It is required that Q
n
be equal to 3. (Z
L
=200-
j40, Z
s
=50+j20). Can this impedance transformation be realized ?
Discuss the result.
21
Pros & Cons of Lumped Element
Network
Lumped element network is compact, small in size.
Suitable for use up to frequency of 2.5GHz.
Not every values of inductance and capacitance are available.
Stability, value changes with temperature.
Tolerance of components.
Difficult to tune.
Higher cost.
Appendix 1 Series and
Parallel RLC network, Nodal
Q-Factor Concepts
22
Q Factor
The Q Factor of a series or parallel impedance is defined by:
[ ]
n dissipatio power
stored energy Maximum
= Q
jX
V()
I()
R
jB
V()
I()
G
R
X
Q
s
=
G
B
Q
p
=
Taken from the
notes of EEN3096,
Communication
Electronics,
F. Kung 2000.
(A.1a)
(A.1b)
Q Factor and Series/Parallel RLC
Network
R
p
C
p
L
p
Z
R
s
C
s
L
s
Z
Parameter Series RLC network Parallel RLC network
Input impedance
s
s s
C j
L j R
1
+ +
1
1 1
|
|
\
|
+ +
P
P P
C j
L j R
Resonance frequency
s s
o
C L
1
=
p p
o
C L
1
=
Quality factor, Q at resonance
frequency
s s o s
s o
s
C R R
L
Q
1
= =
p P o
p o
P
p
C R
L
R
Q
= =
Bandwidth BW (note that this
is just an approximation)
s
o
Q
p
o
Q
(A.2)
o
23
Parallel RLC
R Q
R Q
Series RLC
R Q
R Q
+90
o
Arg(Z())
-90
o
0
+90
o
Arg(Z())
-90
o
0
|Z()|
o
R
3dB Bandwidth
1

2
R
2
1
o
R
3dB Bandwidth
1

2
|Z()|
R 2
Frequency Response of Series/Parallel
RLC Network
L
L1
C
C1
R
R1
R
R1
C
C1
L
L1
For series RLC:
( )
C j
LC RC j
C j
L j R Z

2
1
1
+
=
+ + =
2 complex conjugate zeros
on s-plane
1 pole on s-plane
( ) ( )
L j RLC R
RL j
L j R
C j Z

=
+ + =
2
1
1 1
For parallel RLC:
j
x
Resonance
Frequency
2 complex conjugate poles
1 zero
j
x
Resonance
Frequency
x
Resonance frequency is
the frequency where
input impedance to a
passive RLC network
becomes real.
Poles and Zeros of Series and Parallel
RLC Network
Pole
Zero
( )
sC
LC s sRC
s Z
2
1 + +
=
( )
sL RLC s R
sRL
s Z
+ +
=
2
L
L1
C
C1
R
R1
R
R1
C
C1
L
L1
24
Resonance Frequency of Higher Order
Systems (1)
For a system with more than one L and C, there will be higher order
poles and zeros. These will distort the location of the fundamental
resonance frequency of the network and introduce higher order
resonance frequencies.
j
x
x
x
x
Higher order
poles and zeros
f
resonance1
f
resonance2
(higher
order)
f
resonance3
(higher
order)
Z
j
x
x
x
x
f
resonance1
f
resonance2
(higher
order)
Dominant poles and
zero contributing to
(series) f
resonance3
Dominant poles and
(parallel) f
resonance1
Systems (2)
Since each resonance frequency is still due to the dominant poles and
zeros, the concept of Q factor with regards to 3dB bandwidth can still be
applied to higher order network.
Dominant poles and
(parallel) f
resonance2
f
resonance3
(higher
order)
25
Systems (3)
f
|Z|
0
f
resonance1
f
resonance3
f
resonance2
L
eq1
C
eq1 R
eq1
L
eq2
C
eq2 R
eq2
C
eq3
R
eq3
L
eq3
Impedance
Transform
Network
(Lossless)
R
L
jX
L
Z
I
Impedance
Transform
Network
(Lossless) R
L
jX
L
Z
I
Augmented Network
If Z
I
= R
s
, then the augmented
network is actually under
resonance during normal
operation. The concept of Q
factor can be applied. If Z
I
is
complex, the concept of Q factor
can still be applied if the X
s
is
small.
Impedance Transformation Network as
a Resonating Network
26
3.0 Distributed and Hybrid
Network
Distributed Transformation Network
Single Stub transformation network.
jB can be implemented using a Tline with open/short circuit at one end.
Can also use lumped elements such as SMD capacitors. In this case
the network is known as hybrid network.
No blind spot.
( )
( )
1
1
tan
tan
1
(
(
(
(
+
+
+ =
l jZ Z
l jZ Z
Z
jB Z
L c
c L
c
s
(3.1)
Z
L
TL
1
jB
1
Z = R +jX
Y = G +jB
Z
s
Z
c
,
l
27
Example 3.1
Transform the load Z
L
= 200 - j40 to 50 + j20 at 2.4GHz. Find the nodal
Q factor and estimate the bandwidth of the circuit. Use Smith chart to
aid the design. Synthesize the circuit.
SWR
circle
Z

B
1
Z
s
Z
L
TL
1
jB
1
Z
L
Z = R +jX
Y = G +jB
= l
0356 . 0
013 . 1
=
= =
B
l
( )
1.1cm m 011 . 0
77 . 94
013 . 1
77 . 94 55 . 3 10 4 . 2 2
55 . 3
9
= = = =
= =
=
=
l
o o
eff o
eff
Example 3.1 Cont...
Use a microstrip line to implement the circuit, Z
c
= 50Ohm. Dielectric
constant = 4.6, and d=1.57mm.
Step 1 - Synthesize Tline.
From microstrip Tline design example of Chapter 1, we see that the
required W must be roughly 2.88mm.
28
( )
nH L 863 . 1
0356 . 0 10 4 . 2 2
1
9
=

=
( ) ( )
m 0054 . 0
50 0356 . 0
1
tan
1
tan
1
1 1
tan
1
77 . 94
1 1
= |
\
|
=
|
|
\
|
=
|
\
|
=
= =

B Z
l
B
j
jB
l jZ l Z
c
c in
Example 3.1 Cont...

Step 2 - Synthesize jB
1
.
We can use an inductor for B
1
:
Or we can use another short circuit Tline to generate B
1
:
2.88mm
11mm
Other circuit
here
Or...
2.88mm
5.4mm
11mm
Other circuit
here
Z
L
Example 3.1 Cont...
Thus the final circuit...
29
Can be adjusted
Double-Stub Distributed Network (1)
The single-stub network suffers from the disadvantage of requiring a
variable length of Tline between the load and the stub. This may not
be a problem for fixed transformation network, but would pose some
difficulty if an adjustable tuning network is desired.
To overcome this disadvantage a double-stub transformation network
is used.
( )
( )
1
1
1
1
1 '
2
tan //
tan //
1
(
(
(
(
(
(
(
(
(
\
|
+
+ |
\
|
+ =
l Z j Z
l jZ Z
Z
jB Z
jB
L c
c
jB
L
c
s
8
3
to
8

= l
TL
2
jB
2
Z
L
jB
1
Z
s
TL
1
Optional
Z
L

Double-Stub Distributed Network (2)
TL
2
jB
2
Z
L jB
1
Z
s
TL
1
B
1
TL
2
B
2
TL
1
Z
L
Z
s
Suppose we want to
transform Z
L
to
Z
s
=50
Maury Microwave Corp.
The stubs
30
( )
( )
( )
L
L
L
in
Z
Z
jZ Z
jZ Z
Z l Z
2
1
2
1
2
1
1
tan
tan
=
+
+
=
= l
2 4
2
= = l
(3.2a)
( )
L
in
Z
Z
l Z
2
1
=
c L
Z Z Z =
1
Quarter-Wave Transformer
A quarter-wave transformer is a simple and useful circuit for matching a
real load impedance to a transmission line. An additional feature is that it
can be extended to multi-section design for broader bandwidth.
Consider a terminated lossless Tline again, using the input impedance
relation of Terminated Tline:
4
= l
Z
L
l
z = 0
Z
c
Z
in Z
1
Tline1
(3.2b)
To match Tline1 to Z
L
:
100 200 50
1
= = =
L c
R Z Z
Using the microstrip design equations of Chapter 1 - Advance Transmission Line:
Example 3.2
Design a quarter-wave transformer to transform a 200 load into 50
at 2.4 GHz using a microstrip line constructed on a dielectric with
dielectric constant of 4.6 and thickness of 1.57 mm.
s = w/d
31
Example 3.2 Cont...
200
18.0mm
0.66mm
2.88mm 50
Microstrip
Line
Top view
In this analysis the reactance associated
with the discontinuities must be taken into
account. Proper compensation technique
must be used.
t jZ Z
t jZ Z
Z Z
l t
L
L
in
+
+
=
= =
1
1
1
, tan
(3.3)
Limitation of Quarter Wave Transformer
Although quarter-wave transformer can in theory used to match complex
impedance, it is more common to use it to match real impedance.
However bear in mind that a complex load impedance can always be
transformed to a real impedance by adding the correct series or shunt
reactive component.
At the operating frequency f
o
, the electrical length of the matching
section is
o
/4. But at other frequencies the length is different, so a
perfect match is no longer obtained. The quarter wave transformer has
a limited bandwidth, like other transformation methods.
Writing Z
in
as:
This parameter is
frequency dependent
32
BW of Quarter Wave Transformer (1)
L c c L
c L
c in
c in
Z Z t j Z Z
Z Z
Z Z
Z Z
2 + +
=
+
=
Using (3.2a) and (3.3):
For frequency near f
o
, l
o
/4, sec
2
>>1, and this simplifies to:
( ) [ ]
( ) ( ) ( ) ( ) [ ] { }
( ) [ ] { }
2
1
2
1
2
1
2 2
2 2 2
2 2
sec / 4 1
1
/ 4 /
1
4
c L L c
c L L c c L c L
L o c L
c L
Z Z Z Z
Z Z Z Z t Z Z Z Z
Z Z t Z Z
Z Z
+
=
+ +
=
+ +
=
cos
2
L c
c L
Z Z
Z Z
=
(3.4a)
(3.4b)
Assuming the maximum mismatch we can tolerate is ||
max
=
m
= 0.1,
or return loss of -20log
10
(0.1) = -20dB.
Plotting || = versus = l, we can determine the bandwidth of the
quarter wave transformer.
1 1.5 2 2.5
0
0.2
0.4

i
m
i
2
m
'
m
33
c L
L c
m
m
m
Z Z
Z Z
=
2
1
cos
2
(
(
(
=
=
c L
c L
m
m
o
m o
Z Z
Z Z
f
f f BW
2
1
cos
4
2
2
2
1
(3.5)

o m
m
o
m
o
p
p
m
m
f
f
f
f
f
v
v
f
l
2
2 4
2
=
= = =
Quarter wavelength
Putting
m
into (3.4a) and solve for
m
:
Assuming TEM or quasi-TEM mode:
And the bandwidth is given by:
361 . 22 10 . 50
1
= = Z
13 . 0
1
1
=
+
=
VSWR
VSWR
m
MHz BW 2 . 451 =
77 . 94
GHz 4 . 2
=
cm
cm
7 . 1
4
6 . 6 / 2
GHz 4 . 2
GHz 4 . 2
=
= =

2
4
acos
m
1 m
2
2 50 10 ( )
10 50
(
(
(
(
(
(
fo 4.511 10
8
=
From Example 5.1 of Chapter 1
Example 3.3
Design a single-section quarter wave transformer to match a 10 load
to a 50 Tline, at f
o
=2.4GHz. Determine the bandwidth for which
VSWR<1.3. Use the microstrip line design example of Chapter 1 to
physically realize it.
34
Pros & Cons of Distributed Network
Easy to fabricate and incorporate into microwave circuit. Utilize the
PCB itself.
Cheap and stable, good tolerance if mechanical tolerance is properly
controlled.
Easier to tune than lumped element network.
Modern manufacturing facilities use LASER to trim the transmission
line dimension during tuning.
At low frequency, the length of the Tline can be unwieldy large.
Z
0
Z
1
Z
2
Z
3
1
2
Z
n
must increase or
decrease
monotonically
Z
L
must be real.
Z
L
The theory of multi-section transformer
is beyond the time frame of this course.
Interested students please refer to
Section 5.10-12 of reference [3].
Increasing Bandwidth of Distributed
Matching Network
For applications requiring more bandwidth than a single quarter wave
section can provide, multi-section transformers can be used.
We can synthesize any desired reflection coefficient response as a
function of frequency, by properly choosing
n
and using enough
sections.
35
f / f
o
1 0.8 0.6 1.2 1.4
|(f)|
2-section transformer
(Binomial)
f / f
o
1 0.8 0.6 1.2 1.4
|(f)|
transformer ratio = 4
(Binomial)
n=6 4 2 k=1 2 3
f / f
o
1 0.8 0.6 1.2 1.4
|(f)|
transformer ratio = 4
(Chebyshev)
k=2
Z
L
Z
3
=Z
L
Z
2
Z
1
Z
o
1/4
1/4
Z
o
resistive
thin film
2-section impedance
transformer
Matched Termination
0.2 0.2
0.2
VSWR
dB
=
+
=
=
=
1
1
15
20
1398
.
log
.
Return loss

Transformer
ratio, # section,
Multisection Quarter-Wave
Transformer
Binomial Transformer
impedance of consecutive 1/4 wave lines are proportional to binomial
coefficients.
gives maximally flat passband characteristic.
Chebyshev Transformer
wider bandwidth than Binomial Transformer for the same number of 1/4
wave sections.
ripple over passband.
Tapered Transition
characteristic impedance varies continuously in a smooth fashion.
taper length of 0.5 - 1.5 wavelength required.
Binomial and Chebyshev Transformers
36
THE END

Impedance Transformation and Impedance Matching

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Impedance Transformation and Impedance Matching

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1

August 2007 2006 by Fabian Kung Wai Lee 1

Since X is +ve, an inductor can be used to realize it:

August 2007 2006 by Fabian Kung Wai Lee 32

Example 3.1 Cont...

August 2007 2006 by Fabian Kung Wai Lee 58

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