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Electronic Devices Test 5

Electronic Devices Result & Statistics


1. In n-type material the ________ is called the majority carrier.
A. electron B. hole
C. proton D. neutron
Answer: Option A
Learn more problems on : Semiconductor Diodes
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2. The output frequency of a full-wave rectifier is ________ the input frequency.
A. one-half
B. equal to
C. twice
D. one-quarter
Answer: Option C
Learn more problems on : Diode Applications
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3. What best describes the circuit?
A. Full-wave rectifier
B. Half-wave rectifier
C. Clipper
D. Clamper
Answer: Option B
Learn more problems on : Diode Applications
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4. In what decade was the first transistor created?
A. 1930s B. 1940s
C. 1950s D. 1960s
Marks : 0/20
Total number of questions : 20
Number of answered questions : 0
Number of unanswered questions : 20
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Answer: Option B
Learn more problems on : BJT Devices
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5. Calculate the approximate value of the maximum power rating for the transistor represented
by the output characteristics of Figure 4.1?
A. 250 mW
B. 170 mW
C. 50 mW
D. 0 mW
Answer: Option B
Learn more problems on : DC Biasing-BJTs
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6. What is the unit of the parameter h
o
?
A. Volt
B. Ohm
C. Siemen
D. No unit
Answer: Option C
Learn more problems on : BJT Amplifiers
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7. Refer to the following characteristic curve. Calculate the resistance of the FET at V
GS
= 0.25 V
if r
o
= 10 k .
A. 1.1378 k
B. 113.78
C. 11.378
D. 11.378 k
Answer: Option D
Learn more problems on : FET Devices
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8. For ________, Shockley's equation is applied to relate the input and the output quantities.
A. JFETs
B. depletion-type MOSFETs
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C. enhancement-type MOSFETs
D. JFETs and depletion-type MOSFETs
Answer: Option D
Learn more problems on : DC Biasing-FETs
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9. Class B operation is provided when the dc bias leaves the transistor biased just off, the
transistor turning on when the ac signal is applied.
A. True B. False
Answer: Option A
Learn more problems on : Power Amplifiers
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10. A silicon power transistor is operated with a heat sink (
SA
= 1.5C/W). The transistor, rated
at 150 W (25C), has
JC
= 0.5 C/W, and the mounting insulation has
CS
= 0.6 C/W.
What is the maximum power that can be dissipated if the ambient temperature is 50C and
T
Jmax
= 200 C?
A. 61.5 W
B. 60.0 W
C. 57.7 W
D. 55.5 W
Answer: Option C
Learn more problems on : Power Amplifiers
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11. Which operation class is generally used in radio or communications?
A. A B. B
C. AB D. C
E. D
Answer: Option D
Learn more problems on : Power Amplifiers
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12. Which of the following applications include a phase-locked loop (PLL) circuit?
A. Modems
B. Am decoders
C. Tracking filters
D. All of the above
Answer: Option D
Learn more problems on : Linear-Digital ICs
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13. The start-up gain of an oscillator must be ________ one.
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A. equal to
B. less than
C. greater than
Answer: Option C
Learn more problems on : Oscillator Circuits
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14. A type of regulator circuit that is quite popular for its efficient transfer of power to the load is
the ________.
A. current-limiting voltage regulator
B. switching regulator
C. foldback limiting regulator
D. op-amp series regulator
Answer: Option B
Learn more problems on : Voltage Regulators
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15. A reverse-biased silicon diode has about 0.7 V across it.
A. True B. False
Answer: Option B
Learn more problems on : Semiconductors
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16. For a given input frequency, a half-wave rectifier is easier to filter than a full-wave rectifier.
A. True B. False
Answer: Option B
Learn more problems on : Diode Applications
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17. V
RRM
is the same as PIV rating.
A. True B. False
Answer: Option A
Learn more problems on : Diode Applications
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18. Refer to the given figure. The most probable cause of trouble, if any, from these voltage
measurements is
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A. the base-emitter junction is open.
B. R
E
is open.
C. a short from collector to emitter.
D. no problems.
Answer: Option C
Learn more problems on : Transistor Bias Circuits
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19. Collector-feedback bias is another name for base bias.
A. True B. False
Answer: Option B
Learn more problems on : Transistor Bias Circuits
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20.
Refer to the given figure. I
D
= 6 mA. Calculate the value of V
DS
.
A. 9 V
B. 9 V
C. 6 V
D. 3 V
Answer: Option A
Learn more problems on : Field-Effect Transistors
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