2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix
Document Number: 70226
S-04279Rev. F, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (W) V
GS(th)
(V) I
D
(A)
2N7000 5 @ V
GS
= 10 V 0.8 to 3 0.2
2N7002 7.5 @ V
GS
= 10 V 1 to 2.5 0.115
VQ1000J 60 5.5 @ V
GS
= 10 V 0.8 to 2.5 0.225
VQ1000P 5.5 @ V
GS
= 10 V 0.8 to 2.5 0.225
BS170 5 @ V
GS
= 10 V 0.8 to 3 0.5
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Plastic: VQ1000J
Sidebraze: VQ1000P
Top View
TO-92-18RM
(TO-18 Lead Form)
D
S
G
1
2
3
2N7000
BS170
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70226
S-04279Rev. F, 16-Jul-01
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002
VQ1000J VQ1000P VQ1000J/P
BS170 Unit
Drain-Source Voltage V
DS
60 60 60 60 60
Gate-Source VoltageNon-Repetitive V
GSM
"40 "40 "30 "25 V
Gate-Source VoltageContinuous V
GS
"20 "20 "20 "20 "20
Continuous Drain Current
T
A
= 25_C 0.2 0.115 0.225 0.225 0.5
Continuous Drain Current
(T
J
= 150_C)
T
A
= 100_C
I
D
0.13 0.073 0.14 0.14 0.175 A
Pulsed Drain Current
a
I
DM
0.5 0.8 1 1
T
A
= 25_C 0.4 0.2 1.3 1.3 2 0.83
Power Dissipation
T
A
= 100_C
P
D
0.16 0.08 0.52 0.52 0.8
W
Thermal Resistance, Junction-to-Ambient R
thJA
312.5 625 96 96 62.5 156 _C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. t
p
v 50 ms.
SPECIFICATIONS2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA 70 60 60
V
DS
= V
GS
, I
D
= 1 mA 2.1 0.8 3 V
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA 2.0 1 2.5
V
DS
= 0 V, V
GS
= "15 V "10
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100
nA
V
DS
= 48 V, V
GS
= 0 V 1
T
C
= 125_C 1000
m Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V 1
mA
T
C
= 125_C 500
V
DS
= 10 V, V
GS
= 4.5 V 0.35 0.075
On-State Drain Current
b
I
D(on)
V
DS
= 7.5 V, V
GS
= 10 V 1 0.5
A
V
GS
= 4.5 V, I
D
= 0.075 A 4.5 5.3
V
GS
= 5 V, I
D
= 0.05 A 3.2 7.5
Drain-Source On-Resistance
b
r
DS(on)
T
C
= 125_C 5.8 13.5 W
DS(on)
V
GS
= 10 V, I
D
= 0.5 A 2.4 5 7.5
T
J
= 125_C 4.4 9 13.5
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.2 A 100 80
Common Source Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 0.05 A 0.5
mS
Dynamic
Input Capacitance C
iss
22 60 50
Output Capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
11 25 25 pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
2 5 5
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279Rev. F, 16-Jul-01
www.vishay.com
11-3
SPECIFICATIONS2N7000 AND 2N7002 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Switching
d
Turn-On Time t
ON
V
DD
= 15 V, R
L
= 25 W
7 10
Turn-Off Time t
OFF
V
DD
= 15 V, R
L
= 25 W
I
D
^0.5 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Turn-On Time t
ON
V
DD
= 30 V, R
L
= 150 W
7 20
ns
Turn-Off Time t
OFF
V
DD
= 30 V, R
L
= 150 W
I
D
^ 0.2 A, V
GEN
= 10 V, R
G
= 25 W
11 20
SPECIFICATIONSVQ1000J/P AND BS170 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions Typ
a
Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 100 mA 70 60 60
Gate-Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA 2.1 0.8 2.5 0.8 3
V
V
DS
= 0 V, V
GS
= "10 V "100
Gate-Body Leakage I
GSS
T
J
= 125_C "500 nA
GSS
V
DS
= 0 V, V
GS
= "15 V "10
V
DS
= 25 V, V
GS
= 0 V 0.5
Zero Gate Voltage Drain Current I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125_C 500 mA
DSS
V
DS
= 60 V, V
GS
= 0 V 10
m
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V 1 0.5 A
V
GS
= 5 V, I
D
= 0.2 A 4 7.5
V
GS
= 10 V, I
D
= 0.2 A 2.3 5
W Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 0.3 A 2.3 5.5
W
T
J
= 125_C 4.2 7.6
V
DS
= 10 V, I
D
= 0.2 A 100
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A 100 mS
Common Source Output Conductance
b
g
os
V
DS
=5 V, I
D
= 0.05 A 0.5
Dynamic
Input Capacitance C
iss
22 60 60
Output Capacitance C
oss
V
DS
=25 V, V
GS
= 0 V
f = 1 MHz
11 25 pF
Reverse Transfer Capacitance C
rss
f = 1 MHz
2 5
Switching
d
Turn-On Time t
ON
V
DD
= 15 V, R
L
= 23 W
7 10
Turn-Off Time t
OFF
V
DD
= 15 V, R
L
= 23 W
I
D
^ 0.6 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Turn-On Time t
ON
V
DD
= 25 V, R
L
= 125 W
7 10
ns
Turn-Off Time t
OFF
V
DD
= 25 V, R
L
= 125 W
I
D
^ 0.2 A, V
GEN
= 10 V, R
G
= 25 W
7 10
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70226
S-04279Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance On-Resistance vs. Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5 6
0.0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5 6 7 8
Output Characteristics Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
Gate-to-Source Voltage (V)
T
J
= 55_C
25_C
125_C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V 2.5 V
2, 1 V
0
4
8
12
16
20
0 400 800 1200 1600 2000 2400
0.0
0.5
1.0
1.5
2.0
55 30 5 20 45 70 95 120 145
0
1
2
3
4
5
6
7
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35
Gate Charge
Q
g
Total Gate Charge (pC)
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
I
D
= 0.5 A
I
D
Drain Current (A)
On-Resistance vs. Junction Temperature
V
GS
= 10 V, r
DS
@ 0.5 A
T
J
Junction Temperature (_C)
r
DS
@ 10 V = V
GS
r
DS
@ 5 V = V
GS
V
GS
= 5 V, r
DS
@ 0.05 A
V
GS
= 0 V
f = 1 MHz
V
DS
= 30 V
I
D

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D

D
r
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i
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C
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(
A
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D
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(
o
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(

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C

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a
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(
p
F
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S

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(
N
o
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2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
Document Number: 70226
S-04279Rev. F, 16-Jul-01
www.vishay.com
11-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18 20
0.001
0.010
0.100
1.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
V
SD
Source-to-Drain Voltage (V) V
GS
Gate-to-Source Voltage (V)
500 mA
I
D
= 50 mA
T
J
= 25_C
T
J
= 125_C
Threshold Voltage
0.75
0.50
0.25
0.00
0.25
0.50
50 25 0 25 50 75 100 125 150
I
D
= 250 mA
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 100 10 1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
t
1
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
S

S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
r
D
S
(
o
n
)

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n
-
R
e
s
i
s
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a
n
c
e

(

)
V
G
S
(
t
h
)

V
a
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(
V
)

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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