ECE 3040 - Dr.

Alan Doolittle Georgia Tech

MOSFET Small Signal Model and Analysis
Just as we did with the BJT, we can consider the
MOSFET amplifier analysis in two parts:
Find the DC operating point
Then determine the amplifier output parameters for very
small input signals.
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Linear
Two Port
Network
+
V
1
-
i
1 i
2
+
V
2
-
I
1
=y
11
V
1
+ y
12
V
2
I
2
=y
21
V
1
+ y
22
V
2
General y-parameter Network
Non-Linear I-V
relationship
(BJT,
MOSFET,
etc)
+
V
1
-
i
1 i
2
+
V
2
-
Linearize
over small
signal
range
I
GS
=y
11
V
GS
+ y
12
V
DS
I
DS
=y
21
V
GS
+ y
22
V
DS
MOSFET y-parameter Network
v
GS
v
DS
i
DS
i
GS
ECE 3040 - Dr. Alan Doolittle Georgia Tech
I
GS
=y
11
V
GS
+ y
12
V
DS
I
DS
=y
21
V
GS
+ y
22
V
DS
[ [ [
I
GS
y
11
y
12
V
GS
I
DS
y
21
y
22
V
DS
[ [ [
=
Q V Q V
i
j
ij
DS GS
V
I
y
, , ,

=
Derivative of current-voltage equation
evaluated at the Quiescent Point
MOSFET Small Signal Model and Analysis
( ) [ ]( )
TN GS DS DS TN GS
n
DS
V V V for V V V
K
I + = 1
2
2
MOSFET Amplifiers are biased into Saturation (or Active Mode)
1.) Input Conductance
2.) Output Conductance
3.) Transconductance
0 0 0 0 0
12 11
= = =

= y and y
V
I
and
V
I
I
DS
GS
GS
GS
GS
( )
2
22
2
T GS
n
DS
DS
V V
K
y
V
I
= =

( )( )
DS T GS n
GS
DS
V V V K y
V
I
+ = =

1
21
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Compare with BJT Results
( )
DS
DS
T GS
n
o
V
I
V V
K
g y
+
= = =

1
2
2
22
( )( )

= + = =
2
1
21
TN GS
DS
DS T GS n m
V V
I
V V V K g y
CE A
C
V V
I
y
+
=
22
T
C
V
I
y =
21
MOSFET BJT
There is a large amount of symmetry between the MOSFET and the BJT
Each of these
parameters
act in the
same manner
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Putting the mathematical model into a small signal equivalent circuit
Compare this to the BJT small signal equivalent circuit
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
Calculate the voltage gain, A
v
=v
o
/v
s
Given: K
n
=1 mA/V
2
, =0.015 V
-1
Bias Point of: I
DS
=2 mA, V
DS
=7.5V
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
( )
2
2
T GS
n
o
V V
K
g =

( )( )
DS T GS n m
V V V K g + = 1
Need to find V
GS
-V
T
( ) [ ]( )
( ) [ ]( )
= = =
= =
+ =
+ =
k r S g mS g
V V V
V V
V mA
mA
V V V
K
I
o o m
TN GS
TN GS
DS TN GS
n
DS
9 . 36 1 . 27 11 . 2
9 . 1
11 . 1
4
) 5 . 7 ( 015 . 0 1
2
/ 1
2
1
2
2
2
2

ECE 3040 - Dr. Alan Doolittle Georgia Tech

MOSFET Small Signal Model and Analysis
Example: Jaeger 13.94
( ) ( )
[ ] V V
v
v
v
v
v
v
A
k mS R Rd r g
v
v
and
Meg k
Meg
v
v
v
v
v
v
v
v
A
GS
o
s
GS
s
o
v
o m
GS
o
s
GS
GS
o
s
GS
s
o
v
/ 27 . 7
35 . 7 48 . 3 1 . 2 3 99 . 0
1 10
1
= = =
= = = =
+
=
= =
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Add in capacitances
Reverse Bias Junction capacitances
Overlap of
Gate Oxide
Gate to
channel to
Bulk
capacitance
Overlap of
Gate Oxide
LD LD
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
Complete Model of a MOSFET
Reverse Bias Junction capacitances
Overlap of
Gate Oxide
and Gate to
channel
capacitance
Overlap of
Gate Oxide
Gate to
channel to
Bulk
capacitance
F SB
m mb
V
g g

2 2 +
=
Due to effective
modulation of the
threshold voltage.
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model
SPICE models the drain current ( I
DS
) of an n-channel MOSFET using the
following parameters/equations (SPICE variables are shown in ALL
CAPPITAL LETTERS)
Cutoff: I
DS
= 0
Linear:
Saturation:
Threshold Voltage:
Channel Length
L
EFF
=L-2LD
( ) [ ] ( ) ( )
DS DS GS DS
EFF
DS
V LAMBDA V VTH V V
L
W KP
I +

= 1 2
2
( ) [ ] ( ) ( )
DS GS
EFF
DS
V LAMBDA VTH V
L
W KP
I +

= 1
2
2
( ) PHI V PHI GAMMA VTO V
BS TH
2 2 + =
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model Additional Parameters
SPICE takes many of its parameters from the integrated circuit
layout design:
L
W
AD=WxL
diff
(drain)
L
diff
(drain)
L
diff
(source)
AS=WxL
diff
(source)
Source Gate Drain
L = polysilicon gate length W = polysilicon gate width
AD = drain area AS = source area
PD = perimeter of drain diffusion (not including edge under gate)
PS = perimeter of source diffusion (not including edge under gate)
NRD = number of squares in drain diffusion
NRS = number of squares in source diffusion
PS=2xL
diff
(source)+W PD=2xL
diff
(drain)+W
Specified in terms of the
minimum feature size
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Small Signal Model and Analysis
SPICE MOSFET Model Additional Parameters
Most
Used
ECE 3040 - Dr. Alan Doolittle Georgia Tech
MOSFET Amplifiers
What is the Maximum Gain Possible?
( )( )
( )
( )
( )
T GS
DS
Max v
T GS n
DS T GS n
Max v
o m Max v
V V
V
A
V V K
V V V K
A
v g A

+
=

+
=
=

1
1
,
2
,
,
Saturated! Is satisfied. always 0
, MOSFET mode depletion a for 0
, current)? (Constant
>

=
>
is V
so V and
V V but
V V V saturated it Is
TP
TP
GS DS
TP GS DS
g
o
is internal to the
transistor and can not be
avoided. Any additional
resistor due to external
circuitry will lower the
gain. For this reason
current sources are often
used as the load instead
of bias resistors in
amplifier circuits.
Gate
Bias
AC
Signal