A TECHNICAL SEMINAR REPORT

ON
Ovonic Unified Memory

MASTER OF TECHNOLOGY
IN
EMBEDDED SYSTEMS AND VLSI DESIGN
2013-2015
BY

G Lemuel George - 13Q91D7708


DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGG
MALLA REDDY COLLEGE OF ENGINEERING
MAISAMMAGUDA, DHULAPALLY, SECUNDERABAD- 500 014(A.P)
MALLA REDDY COLLEGE OF ENGINEERING
(MALLA REDDY GROUP OF INSTITUTIONS)
MAISAMMAGUDA, DHULAPALLY, SECUNDRABAD- 500 014(A.P)



CERTIFICATE
This is to certify that technical seminar report on OVONIC UNIFIED
MEMORY is successfully submitted by the following student of
EMBEDDED SYSTEMS AND VLSI DESIGN in partial fulfillment of the
requirement for the award of the M.Tech degree in the year 2014.


G Lemuel George - 13Q91D7708




CO-ORDINATOR HEAD OF THE DEPARTMENT
Mr. A.V. PARAMKUSAM Mr. D. VEMANACHARY
Asst. Professor Associate Professor
ACKNOWLEDGEMENT

It gives me immense pleasure to acknowledge the perennial inspiration of our
beloved principal Dr D. Ramesh and Mr .D.Vemanachary, Head of the Department of
ECE for their kind co-operation and encouragement in bringing out this task. This rightfully
belonged to her to facilitate the completion of this genuinely academic task.

First of all I would like thank Mr. A. V. Paramkusam, our co-ordinator, for his
valuable suggestions and guidence.

My respondents, Teachers of Electronics were my strength. I thank them all for their
responsiveness.

Finally, I avail this opportunity to deep gratitude to all those who have contribute
their valuable assistance and support making our Technical Seminar a success.

ABSTRACT
Nowadays, digital memories are used in each and every fields of day-to-day life.
Semiconductors form the fundamental building blocks of the modern electronic world
providing the brains and the memory of products all around us from washing machines to
super computers. But now we are entering an era of material limited scaling. Continuous
scaling has required the introduction of new materials.

Current memory technologies have a lot of limitations. The new memory technologies
have got all the good attributes for an ideal memory. Among them Ovonic Unified Memory
(OUM) is the most promising one. OUM is a type of nonvolatile memory, which uses
chalcogenide materials for storage of binary data. The term Chalcogen refers to the Group
VI elements of the periodic table. Chalcogenide refers to alloys containing at least one of
these elements such as the alloy of germanium, antimony, and tellurium, which is used as the
storage element in OUM. Electrical energy (heat) is used to convert the material between
crystalline (conductive) and amorphous (resistive) phases and the resistive property of these
phases is used to represent 0s and 1s.
To write data into the cell, the chalcogenide is heated past its melting point and then
rapidly cooled to make it amorphous. To make it crystalline, it is heated to just below its
melting point and held there for approximately 50ns, giving the atoms time to position
themselves in their crystal locations. Once programmed, the memory state of the cell is
determined by reading its resistance.
CONTENT PAGE NO
1. INTRODUCTION
1.1. Topic Name if any
1.2. Topic if any

2. CHAPTER NAME
2.1 Topic if any
2.2 Topic if any

3. CHAPTER NAME
3.1Topic

4. ADVANTAGES AND DIS ADVANTAGES

5. APPLICATIONS

6. CONCLUSION

7. FUTURE SCOPE

8. BIBLIOGRAPHY




LIST OF FIGURES
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LIST OF TABLES
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LIST OF ABBREVIATIONS

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