2SD1126(K)

Silicon NPN Triple Diffused

Application
Power switching
Outline
TO-220AB
1.5 k
(Typ)
130
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
I
D
2SD1126(K)
2
Absolute Maximum Ratings (Ta = 25C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7 V
Collector current I
C
10 A
Collector peak current I
C(peak)
15 A
Collector power dissipation P
C
*
1
50 W
Junction temperature Tj 150 C
Storage temperature Tstg 55 to +150 C
C to E diode forward current I
D
10 A
Note: 1. Value at T
C
= 25C.
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120 V I
C
= 25 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
7 V I
E
= 200 mA, I
C
= 0
Collector cutoff current I
CBO
100 A V
CB
= 120 V, I
E
= 0
I
CEO
10 A V
CE
= 100 V, R
BE
=
DC current transfer ratio h
FE
1000 2000 V
CE
= 3 V, I
C
= 5 A*
1
Collector to emitter saturation V
CE(sat)1
1.5 V I
C
= 5 A, I
B
= 10 mA*
1
voltage V
CE(sat)2
3.0 V I
C
= 10 A, I
B
= 0.1 A*
1
Base to emitter saturation V
BE(sat)1
2.0 V I
C
= 5 A, I
B
= 10 mA*
1
voltage V
BE(sat)2
3.5 V I
C
= 10 A, I
B
= 0.1 A*
1
C to E diode forward voltage V
D
3.0 V I
D
= 10 A*
1
Turn on time t
on
0.8 s I
C
= 5 A, I
B1
= I
B2
= 10 mA
Turn off time t
off
8.0 s
Note: 1. Pulse test.
2SD1126(K)
3
0 50 100 150
Case temperature T
C
(C)
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
c


(
W
)
Maximum Collector Dissipation Curve
20
40
60
P
W

=

1

m
s

1

s
h
o
t
P
W

=

1
0

m
s

1

s
h
o
t
D
C

O
p
e
r
a
t
i
o
n
i
C

(peak)
I
C

(max)
0.03
0.1
0.3
1.0
3
30
10
Collector to emitter voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
3 10 30 100 300
Area of Safe Operation
T
C
= 25C
Collector to emitter voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
0
Typical Output Characteristics
1 2 3 4 5
2
4
6
8
10
I
B
= 0
0.5 mA
0.6
0
.7
0
.8
1
.0
1
.5
2
.
0
T
C
= 25C
30
100
300
1,000
3,000
10,000
30,000
Collector current I
C
(A)
D
C

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o


h
F
E
0.3 1.0 3 10 30
DC Current Transfer Ratio
vs. Collector Current
TC

=

7
5

C
2
5

2
5
V
CE
= 3 V
Pulse
2SD1126(K)
4
0.01
0.03
0.1
0.3
1.0
3
10
Collector current I
C
(A)
0.3 1.0 3 10 30 C
o
l
l
e
c
t
o
r

t
o

e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
C
E

(
s
a
t
)


(
V
)
B
a
s
e

t
o

e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
B
E

(
s
a
t
)


(
V
)
Saturation Voltage vs. Collector Current
V
BE

(sat)
V
CE

(sat)
l
C
/l
B
= 100
T
C
= 25C
Pulse
200
500
0.5 0.1
2.54 0.5
0.76 0.1
1
4
.
0

0
.
5
1
5
.
0

0
.
3
2
.
7
9

0
.
2
1
8
.
5

0
.
5
7
.
8

0
.
5
10.16 0.2
2.54 0.5
1.26 0.15
4.44 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1
.
2
7
6
.
4

+
0
.
2

0
.
1
3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Strae 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: