Power Transistors

1
Publication date: March 2003 SJD00219BED
2SD1747, 2SD1747A
Silicon NPN epitaxial planar type
For power switching
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory liniarity of forward current transfer ratio h
FE
Large collector current I
C
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
7.00.3
3.50.2
0 to 0.15
1
2
.
6

0
.
3
7
.
2

0
.
3
2
.
5

0
.
2
2
.
5

0
.
2
(
1
.
0
)
(
1
.
0
)
1
.
0

0
.
2
3.00.2
2.00.2
1.10.1
0.750.1
0.90.1
0 to 0.15
0.40.1
2.30.2
4.60.4
1 2 3
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Note) Self-supported type package is also prepared.
Rank Q P
h
FE1
90 to 180 130 to 260
Parameter Symbol Rating Unit
Collector-base voltage
2SD1747 V
CBO
130 V
(Emitter open)
2SD1747A 150
Collector-emitter voltage
2SD1747 V
CEO
80 V
(Base open)
2SD1747A 100
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
7 A
Peak collector current I
CP
15 A
Collector power dissipation P
C
15 W
T
a
= 25C 1.3
Junction temperature T
j
150 C
Storage temperature T
stg
55 to +150 C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
2SD1747 V
CEO
I
C
= 10 mA, I
B
= 0 80 V
(Base open)
2SD1747A 100
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 100 V, I
E
= 0 10 A
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 5 V, I
C
= 0 50 A
Forward current transfer ratio h
FE1
V
CE
= 2 V, I
C
= 0.1 A 45
h
FE2

*
V
CE
= 2 V, I
C
= 3 A 90 260
Collector-emitter saturation voltage V
CE(sat)
I
C
= 5 A, I
B
= 0.25 A 0.5 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 5 A, I
B
= 0.25 A 1.5 V
Transition frequency f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 10 MHz 30 MHz
Turn-on time t
on I
C
= 3 A, I
B1
= 0.3 A, I
B2
= 0.3 A
0.5 s
Storage time t
stg
V
CC
= 50 V 1.5 s
Fall time t
f
0.2 s
2SD1747, 2SD1747A
2
SJD00219BED
V
CE(sat)
I
C
V
BE(sat)
I
C
V
BE(sat)
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
C
C
ob
V
CB
0
0 160 40 120 80
5
15
10
20
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n


P
C


(
W
)
Ambient temperature T
a
(C)
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
(1)
(2)
0 12 2 10 4 8 6
0
2
4
6
10
8
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
Collector-emitter voltage V
CE
(V)
TC=25C
IB=55mA
50mA
40mA
45mA
20mA
30mA
35mA
10mA
15mA
5mA
10 1 0.1
0.01
0.1
1
10
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
C
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
(1) IC/IB=10
(2) IC/IB=20
TC=25C
(1)
(2)
0.01
0.01
0.1
1
10
100
0.1 1 10
C
o
l
l
e
c
t
o
r
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
C
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
IC/IB=20
TC=100C
25C
25C
0.1 10 1
0.01
0.1
1
10
B
a
s
e
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
B
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
(1)
(2)
(1) IC/IB=10
(2) IC/IB=20
TC=25C
0.01
0.01
0.1
1
10
100
0.1 1 10
B
a
s
e
-
e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e


V
B
E
(
s
a
t
)


(
V
)
Collector current I
C
(A)
TC=25C
25C
100C
IC/IB=20
0.01 0.1 1 10
1
10
F
o
r
w
a
r
d

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o


h
F
E
Collector current I
C
(A)
10
2
10
4
10
3
VCE=2V
TC=100C
25C
25C
0.01 0.1 1 10
1
10
Collector current I
C
(A)
T
r
a
n
s
i
t
i
o
n

f
r
e
q
u
e
n
c
y


f
T


(
M
H
z
)
10
2
10
4
10
3
VCE=10V
f=10MHz
TC=25C
0.1 1 10 100
1
10
10
2
10
3
10
4
C
o
l
l
e
c
t
o
r

o
u
t
p
u
t

c
a
p
a
c
i
t
a
n
c
e


(
C
o
m
m
o
n

b
a
s
e
,

i
n
p
u
t

o
p
e
n

c
i
r
c
u
i
t
e
d
)


C
o
b


(
p
F
)
Collector-base voltage V
CB
(V)
IE=0
f=1MHz
TC=25C
2SD1747, 2SD1747A
3
SJD00219BED
R
th
t
t
on
,

t
stg
,

t
f
I
C
Safe operation area
0.01
0.1
1
10
100
0 8 2 6 4
T
u
r
n
-
o
n

t
i
m
e

t
o
n

,

S
t
o
r
a
g
e

t
i
m
e

t
s
t
g

,

F
a
l
l

t
i
m
e

t
f


(

s
)
Collector current I
C
(A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(IB1=IB2)
VCC=50V
TC=25C
tstg
tf
ton
0.01
1
0.1
1
10
100
10 100 1000
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t


I
C


(
A
)
Collector-emitter voltage V
CE
(V)
Non repetitive pulse
TC=25C
ICP
IC
t=10ms
t=1ms
t=300ms
2
S
D
1
7
4
7
2
S
D
1
7
4
7
A
10
1
1
10
10
2
10
3
10
3
10
4
10
2
10 1 10
1
10
3
10
2
10
4
Time t (s)
T
h
e
r
m
a
l

r
e
s
i
s
t
a
n
c
e


R
t
h


(

C
/
W
)
(1)Without heat sink
(2)With a 50502mm Al heat sink
(1)
(2)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.