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as shown
above. There will be a junction capacitance, C
je
, associated with
the forward biased EBJ as well as a diffusion capacitance
labeled C
de
. These latter two capacitances appear in parallel and
so can be combined as
je de
C C C
+ (1)
Typically C
ranges from a few pF to tens of pF, which is dominated by C
de
.
Whites, EE 320 Lecture 22 Page 7 of 12
With these capacitances, the high frequency small-signal model
of the BJ T becomes
(Fig. 5.67)
Note the use of the V
is sometimes referred to as C
ob
(or C
obo
) in datasheets. This
designation reflects the fact that C
= + +
(5.158),(4)
Substituting (4) into (3) gives
( ) ( )
1
1
c m b
I g j C I j C C
r
= + +
Using the definition of h
fe
from (2) we find from this last
equation that
( )
s.c. load
1
m
c
fe
b
g j C
I
h
I
j C C
r
= =
+ +
(5)
It turns out that C
for the
frequencies of interest here. In other words, the frequency at
which C
is important relative to g
m
is much higher than what
is of interest here.
Consequently, from (5)
Whites, EE 320 Lecture 22 Page 11 of 12
( )
( )
1
1
m m
fe
g g r
h
j r C C
j C C
r
=
+ +
+ +
(6)
We can recognize this frequency response of h
fe
in (6) as that for
a single pole low pass circuit:
(Fig. 5.69)
0 m
g r
=
+
(5.160),(7)
The frequency at which
fe
h in (6) declines to a value of 1 is
denoted by
T
, which we can determine from (6) to be
( )
0
1
1
fe
T
h
j r C C
= =
+ +
or
( )
0
1 1
T
T
j r C C j
= + + = +
such that
Whites, EE 320 Lecture 22 Page 12 of 12
2 2
2
0
1
T T
= +
for
T
.
Therefore
( )
0
m m
T
g r g
C C C C r
= =
+ +
(5.162),(8)
so that
( )
2
m
T
g
f
C C
+
(5.163),(9)
This unity-gain frequency f
T
(or bandwidth) is often specified
on transistor datasheets. On page 8, for example, 300
T
f = MHz
for the Motorola P2N2222A. Using (9), this f
T
can be used to
determine C C
+ for a particular DC bias current.
Lastly, the high frequency, hybrid-, small-signal model of Fig.
5.67 is fairly accurate up to frequencies of about 0.2 f
T
.
Furthermore, at frequencies above 5f
to 10 f
, the effects of r
are small compared to the impedance effects of C
. Above that,
r
x
becomes the only resistive part of the input impedance at high
frequencies. Consequently, r
x
is a very important element of the
small-signal model at these high frequencies, but much less so at
low frequencies.