FQP13N50: N-Channel QFET Mosfet

FQP13N50 N-Channel QFET MOSFET
November 2013
FQP13N50
N-Channel QFET MOSFET
500 V, 12.5 A, 430 m Description Features
12.5 A, 500 V, RDS(on) = 430 m (Max.) @ VGS = 10 V, ID = 6.25 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
GD S
TO-220
S
Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted.
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQP13N50 500 12.5 7.9 50 30

(Note 2) (Note 1) (Note 1) (Note 3)
Unit V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds
810 12.5 17 4.5 170 1.35 -55 to +150 300
Thermal Characteristics
Symbol RJC RCS Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Max. FQP13N50 0.74 0.5 Unit C/W C/W
2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1
www.fairchildsemi.com
Package Marking and Ordering Information

Part Number FQP13N50 Top Mark FQP13N50 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted.
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.48 ------1 10 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(on) gFS
VDS = VGS, ID = 250 A VGS =10 V, ID =6.25 A VDS = 50 V, ID = 6.25 A
3.0 ---
-0.33 10
5.0 0.43 --
V S
Dynamic Characteristics
Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1800 245 25 2300 320 35 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 13.4 A, VGS = 10 V VDD = 250 V, ID = 13.4 A, RG = 25
(Note 4)
------(Note 4)
40 140 100 85 45 11 22
90 290 210 180 60 ---
ns ns ns ns nC nC nC
--
Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13.4 A, dIF / dt = 100 A/s --------290 2.6 12.5 50 1.4 --A A V ns C ISM VSD trr Qrr
Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 9.3 mH, IAS = 12.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD ! 13.4 A, di/dt ! 200 A/s, VDD ! BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature.
Typical Characteristics
ID , Drain Current [A]
ID , Drain Current [A]
10
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150
25 10
0
10
-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
10
10
-1
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4 1.2
RDS(ON) [ ], Drain-Source On-Resistance
1.0 0.8 0.6 0.4 0.2
VGS = 10V VGS = 20V
IDR , Reverse Drain Current [A]
10
10
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0
10
20
30
40
50
10
-1
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = 100V VDS = 250V VDS = 400V
VGS, Gate-Source Voltage [V]
Ciss Coss
Capacitance [pF]
2000 1500 1000 500 0 -1 10
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 13.4 A
10
10
10
15
20
25
30
35
40
45
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm alized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 6.7 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature

15 10
2
Figure 8. On-Resistance Variation vs. Temperature
Operation in This Area is Limited by R DS(on)
12
10
1 ms 10 ms DC
100 s
10 s
9
10
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o o
10
-1
10
10
10
10
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
ZJC(t), Thermal Response [oC/W]
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s i n g le p u ls e
$ N o te s : 1 . Z ( J C ( t) = 0 .7 4 % / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z ( J C ( t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
IG = const. 3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS RG
V 10V GS
RL VDD
VDS
90%
VGS
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
L VDS ID RG V 10V GS GS
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
I SD ( DUT )
IFM , Body Diode Forward Current di/dt
IRM
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

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FQP13N50: N-Channel QFET Mosfet

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FQP13N50: N-Channel QFET Mosfet

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FQP13N50 N-Channel QFET MOSFET

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

FQP13N50 500 12.5 7.9 50 30

Unit V A A A V mJ A mJ V/ns W W/C C C

810 12.5 17 4.5 170 1.35 -55 to +150 300

2000 Fairchild Semiconductor Corporation FQP13N50 Rev. C1