LT1007A

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS
SLOS017C D3195, FEBRUARY 1989 REVISED JANUARY 1993
Maximum Equivalent Input Noise Voltage: 3.8 nV/Hz at 1 kHz 4.5 nV/Hz at 10 Hz Low Peak-to-Peak Equivalent Input Noise Voltage: 60 nV Typ From 0.1 Hz to 10 Hz Slew Rate (LT1037 and LT1037A): 11 V/s Min High Voltage Amplification: 7 V/V Min, RL = 2 k 3 V/ V Min, RL = 600 Low Input Offset Voltage: 25 V Max Low Input Offset Voltage Temperature Coefficient: 0.6 V/ C Max Common-Mode Rejection Ratio: 117 dB Min
DW PACKAGE (TOP VIEW)
LT1007A and LT1037A Specifications:
NC NC VIO TRIM IN IN + VCC NC NC
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
NC NC VIO TRIM VCC+ OUT NC NC NC
JG OR P PACKAGE (TOP VIEW)
description
VIO TRIM IN IN + VCC
1 2 3 4
8 7 6 5
VIO TRIM VCC + OUT NC
These monolithic operational amplifiers feature extremely low-noise performance and out standing precision and speed specifications.The typical differential voltage amplification (at TA = 25C) of these devices is an extremely high 20 V/V driving a 2-k load to 12 V and 12 V/ V driving, a 600 - load to 10V. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. Consequently, the specifications of even the lowest-cost grades (the LT1007C and the LT1037C) have been greatly improved compared to equivalent grades of competing amplifiers.
AVAILABLE OPTIONS VIO max AT 25C 60 V 25 V 60 V 25 V 60 V 25 V 60 V PACKAGE SMALL-OUTLINE (DW) LT1007CDW LT1037CDW CERAMIC DIP (JG) LT1007MJG LT1007AMJG LT1037MJG PLASTIC DIP (P) LT1007CP LT1007ACP LT1037CP LT1037ACP LT1007MP LT1007AMP LT1037MP
NC No internal connection
TA
0C to 70C
25 V LT1037AMJG LT1037AMP The DW packages are available taped and reeled. Add the suffix R to the device type, (e.g.,LT1007CDWR).
55C to 125C
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
This datasheet has been downloaded from http://www.digchip.com at this page
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
schematic
VIO TRIM VIO TRIM VCC + 450 A 3.4 k Q3 Q4 Q8 Q5 Q6 Q10 Q1B IN + Q1A Q2B Q2A 200 20 Q13 IN Q11 Q12 Q15 Q16 6 k 200 6 k Q24 500 A 50 VCC C1 = 110 pF for LT1007 C1 = 12 pF for LT1037 All component values shown are nominal. 80 pF 20 pF Q30 Q22 Q23 Q29 Q9 Q17 Q19 Q20 750 Q25 OUT Q26 C1 20 Q7 17 k 130 pF 1.2 k 17 k 1.2 k Q18 Q27 3.4 k 750 A 240 A Q28
240 A
120 A
200

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VCC + (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Supply voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCC Duration of output short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Differential input current (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range: LT1007C, LT1007AC, LT1037C, LT1037AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 C to 70 C LT1007M, LT1007AM, LT1037M, LT1037AM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 C to 125 C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 C to 150 C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DW and P packages . . . . . . . . . . . . 260 C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300 C
NOTES: 1. All voltage values, unless otherwise noted, are with respect to the midpoint between VCC + and VCC . 2. The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. Excessive input current will flow if a differential input voltage in excess of approximately 0.7 V is applied between the inputs, unless some limiting resistance is used. DISSIPATION RATING TABLE PACKAGE DW JG P TA 25 C POWER RATING 1025 mW 1050 mW 1000 mW DERATING FACTOR ABOVE TA = 25 C 8.2 mW/ C 8.4 mW/ C 8 mW/ C TA = 70 C POWER RATING 656 mW 672 mW 640 mW TA = 125 C POWER RATING N/A 210 mW 200 mW
recommended operating conditions

C-SUFFIX MIN Supply voltage, VCC + Supply voltage, VCC Input voltage voltage, VI Operating free-air temperature, TA TA = 25 C TA = full range 4 4 11 10.5 0 70 NOM 15 15 MAX 22 22 M-SUFFIX MIN 4 4 11 10.3 55 125 NOM 15 15 MAX 22 22 UNIT V V V V C
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electrical characteristics, VCC = 15 V

PARAMETER VIO VIO Input offset voltage Average temperature coefficient of input offset voltage Input offset current Input bias current Peak output voltage swing RL= 2 k RL= 600 RL= 2 k RL 2 k, VO = 12 V AVD Large signal Large-signal differential voltage lifi i amplification RL 1 , VO = 10 V RL 600 , VO = 10 V RL 2 k, VO = 10 V RL 1 k, VO = 10 V ri(CM) ro CMRR Common-mode input resistance Open-loop output resistance Common-mode rejection ratio Supply voltage rejection ratio Power dissipation VIC = 11 V VIC = 10.5 V VCC = 4 V to 18 V VCC = 4.5 V to 18 V LT1007C, LT1007AC PD LT1037C, LT1037AC TEST CONDITIONS See Note 3 TA 25 C 0 C to 70 C 0C to 70C 25 C 0C to 70C 25 C 0C to 70C 25 C 25 C 0C to 70C 25 C 25 C 25 C 0C to 70C 0C to 70C 25 C 25 C 25 C 0C to 70C 25 C 0C to 70C 25C 25C 0C to 70C 110 106 106 102 80 85 140 140 160 126 12.5 10.5 12 5 3.5 2 2.5 2 5 70 126 117 114 110 106 80 80 120 130 144 mW 130 20 16 12 13.5 12.5 15 12 LT1007C, LT1037C MIN TYP 20 MAX 60 110 1 50 70 55 75 13 11 12.5 7 5 3 4 2.5 7 70 130 dB G 20 16 12 V/ V 13.8 12.5 V 10 7 LT1007AC, LT1037AC MIN TYP 10 MAX 25 50 0.6 30 40 35 45 UNIT V V/ C
IIO IIB
nA nA
VOM
kSVR
dB
NOTE 3: VIO measurements are performed by automatic test equipment approximately 0.5 seconds after application of power.
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electrical characteristics, VCC = 15 V

PARAMETER TEST CONDITIONS TA 25 C 55 C to 125 C 55 C to 125 C 25 C 55 C to 125 C 25 C 55 C to 125 C RL = 2 k RL = 600 RL = 2 k RL 2 k, VO = 12 V AVD Large signal Large-signal differential voltage amplification lifi i RL 1 k, VO = 10 V RL 600 , VO = 10 V RL 2 k, VO = 10 V RL 1 k, VO = 10 V ri(CM) ro CMRR Common-mode input resistance Open-loop output resistance Common-mode rejection ratio Supply y voltage g rejection ratio VIC = 11 V VIC = 10.3 V VCC = 4 V to 18 V VCC = 4.5 V to 18 V LT1007M, LT1007AM LT1037M, LT1037AM 25 C 25 C 55 C to 125 C 25 C 25 C 25 C 55 C to 125 C 55 C to 125 C 25 C 25 C 25 C 55 C to 125 C 25 C 55 C to 125 C 25 C 25 C 55 C to 125 C 110 104 106 100 80 85 140 140 170 126 12.5 10.5 12 5 3.5 2 2 1.5 5 70 126 117 112 110 104 80 80 120 130 150 mW 130 dB 20 16 12 13.5 12.5 15 12 LT1007M, LT1037M MIN VIO VIO Input offset voltage Average temperature coefficient of input offset voltage Input offset current Input bias current Peak output voltage swing See Note 3 TYP 20 MAX 60 160 1 50 85 55 95 13 11 12.5 7 5 3 3 2 7 70 130 dB G 20 16 12 V/ V 13.8 12.5 V 10 7 MIN LT1007AM, LT1037AM TYP 10 MAX 25 60 0.6 30 50 35 60 V V/ C UNIT
IIO IIB
nA nA
VOM
kSVR
PD
Power dissipation
NOTE 3: VIO measurements are performed by automatic test equipment approximately 0.5 seconds after application of power.
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operating characteristics, VCC = 15 V, TA = 25 C

PARAMETER SR VN(PP) Vn In GBW Slew rate Peak-to-peak equivalent input noise voltage Equivalent q input noise voltage Equivalent input q noise current Gain bandwidth product roduct TEST CONDITIONS RL 2 k, AVD 1 (LT1007, LT1007A) RL 2 k, AVD 5 (LT1037, LT1037A) f = 0.1 Hz to 10 Hz, See Note 4 f = 10 Hz f = 1 kHz f = 10 kHz, See Note 5 f = 1 kHz, See Note 5 f = 100 kHz f = 10 kHz, AV 15 5 LT1007, LT1007A MIN 17 1.7 TYP 25 2.5 0.06 2.8 2.5 1.5 0.4 8 45 60 0.13 4.5 3.8 4 0.6 MAX LT1007, LT1007A MIN 11 TYP 15 0.06 2.8 2.5 1.5 0.4 0.13 4.5 3.8 4 0.6 MAX UNIT V/s V nV/Hz pA/Hz MHz
NOTES: 4. See the test circuit and frequency response curve for 0.1-Hz to 10-Hz noise (Figure 39) in the Applications Information section. 5. See the test circuit for current noise measurement (Figure 40) in the Applications Information section.
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TYPICAL CHARACTERISTICS table of graphs

FIGURE VIO VIO IIO IIB Input offset voltage Change in input offset voltage Input offset current Input bias current Common-mode limit voltage VOM Maximum peak output voltage swing vs Temperature vs Time after power on vs Time (long-term stability) vs Temperature vs Temperature over common-mode range vs Free-air temperature vs Load resistance vs Frequency vs vs vs vs vs vs at Frequency Frequency (LT1007) Frequency (LT1037) Temperature Load resistance Supply voltage 2 k and 600 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 16 17 18 19 20 11 12 19 20 21 22 23 24 25 26 27 19 20 28 29 30 31 32 33 34
AVD
Differential voltage amplification
VID CMRR kSVR SR m
Differential input voltage Common-mode rejection ratio Supply voltage rejection ratio Slew rate Phase shift Phase margin
vs Output voltage vs Frequency vs Frequency vs Free-air temperature (LT1007) vs Free-air temperature (LT1037) vs Frequency (LT1007) vs Frequency (LT1037) vs Free-air temperature (LT1007) vs Free-air temperature (LT1037) vs vs vs vs vs Free-air temperature Time (0.01-Hz to 1-Hz noise) Frequency Bandwidth Supply voltage
Vn
Equivalent input noise voltage
In GBW IOS ICC zo
Equivalent input noise current Total noise Gain bandwidth product Short-circuit output current Supply current Closed-loop output impedance Pulse response (LT1037) Pulse response (LT1007)
vs Frequency vs Source resistance vs Free-air Temperature (LT1007) vs Free-air Temperature (LT1037) vs Time (from short to GND) vs Supply voltage vs Frequency Small-signal (CL = 15 pF) Large-signal Small-signal (CL = 15 pF) Large-signal
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TYPICAL CHARACTERISTICS
INPUT OFFSET VOLTAGE OF REPRESENTATIVE UNITS vs FREE-AIR TEMPERATURE
50 40 VIO Input Offset Voltage V V V IO 30 20 10 0 10 20 LT1007, LT1037 30 40 25 0 25 50 75 100 125 LT1007A, LT1037A LT1007, LT1037 V VIO V IO Change in Input Offset Voltage V VCC = 15 V 10 VCC = 15 V TA = 25C 8
INPUT OFFSET VOLTAGE vs TIME AFTER POWER ON
4 DW, JG, or P Package 2
50 50
TA Free-Air Temperature C
Time After Power On minutes
Figure 1
LONG TERM STABILITY OF INPUT OFFSET VOLTAGE FOR FOUR REPRESENTATIVE UNITS
10 VIO V V IO Change in Input Offset Voltage V
Figure 2
INPUT OFFSET CURRENT vs TEMPERATURE
IIO Input Offset Current mA V IO

0.2 V/Month Trend Line
60 VCC = 15 V 50
40
30
5 0.2 V/Month Trend Line

8 10
20 LT1007, LT1037 10 LT1007A, LT1037A 0 75 50 25 0 25 50 75 100 125
10
t Time months
TA Free-Air Temperature C
Figure 3
Figure 4
Data at high and low temperatures are applicable within the rated operating free-air temperature ranges of the various devices.
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INPUT BIAS CURRENT vs FREE-AIR TEMPERATURE
50 VCC = 15 V 40 IIIB IB Input Bias Current nA IIIB IB Input Bias Current nA 10 5 0 5 1 0 15 20 15 ri(CM) = 20 V = 7 G 3 nA 20 15 Device With Positive Input Current
INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE
30
20 LT1007M, LT1037M 10 LT1007AM, LT1037AM 0
Device With Negative Input Current VCC = 15 V TA = 25C 10 5 0 5 10 VIC Common-Mode Input Voltage 15
50
25 0 25 50 75 100 125 TA Free-Air Temperature C
150
Figure 5
COMMON-MODE INPUT VOLTAGE RANGE LIMITS vs FREE-AIR TEMPERATURE
VCC+ 1 Common-Mode Voltage V (Referred to Power Supply Voltages) VOM VOM Output Voltage Swing V 2 3 4 VCC + = 3 V to 20 V Positive Limit 15 13.5 12 10.5 9 7.5 6 4.5 3
Figure 6
PEAK OUTPUT VOLTAGE SWING vs LOAD RESISTANCE

VCC = 15 V TA = 25C Positive Swing
Negative Swing
4 3 2 1 25 VCC = 3 V to 20 V Negative Limit
VCC 50

125
1.5 0 100 300 1k 3k 10 k
0 25 50 75 100 TA Free-Air Temperature C
RL Load Resistance
Figure 7
Figure 8
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PEAK-TO-PEAK OUTPUT VOLTAGE SWING vs FREQUENCY
VO(pp) Peak-to-Peak Output Voltage Swing V VO(PP) 28 24 20 180 AVD A VD Differential Voltage Amplification dB 160 140 120 100 80 60 40 20 0 1 100 10 k 1M f Frequency Hz 100 M LT1007 LT1037 VCC = 15 V RL = 2 k TA = 25 C
DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREQUENCY
16 LT1037 12 LT1007 8 4 0 VCC = 25C TA = 25C 1k 10 k 100 k 1M f Frequency Hz 10 M
20 0.01
Figure 9
LT1007
Figure 10
LT1037
DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY

40 AVD A VD Differential Voltage Amplification dB 35 30 25 20 15 10 5 AVD 90 100 110 120 Phase Shift 130 140 150 160 170 VCC = 15 V CL = 100 pF TA = 25C 1 10 f Frequency MHz 180 190 100 50 AVD A VD Differential Voltage Amplification dB 45 40
DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY

90 VCC = 15 V 100 CL = 100 pF TA = 25C 110 120 130 140 150 AVD AV = 5 160 170 180 190 1 10 f Frequency MHz 100 Phase Shift
35 30
25 20

0 5
10 0.1
15 10 5
0 0.1
Figure 11
Figure 12
10
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DIFFERNTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE
25 AAVD VD Differential Voltage Amplification dB AVD Differential Voltage Amplification dB A VD 25 VCC = 15 V TA = 25C 20
DIFFERNTIAL VOLTAGE AMPLIFICATION vs LOAD RESISTANCE
20
RL = 2 k RL = 1 k
15 RL = 600 10
15
10
VCC = 15 V VO = 10 V VO = 8 V for TA 100 C RL = 600 25 0 25 50 75 100 TA Free-Air Temperature C 125
0 50
0 0.1
0.4 1 4 RL Load Resistance k
10
Figure 13
DIFFERNTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE
25 TA = 25C A AVD VD Differential Amplification dB 20 RL = 2 k VID V ID Differential Input Voltage V 3 4
Figure 14
DIFFERNTIAL INPUT VOLTAGE vs OUTPUT VOLTAGE
VCC = 15 V TA = 25C
15 RL = 600 10
RL = 600
0 RL = 2 k

0 5 10 15 20 25 VCC Supply Voltage V
2 15
10
10
15
VO Output Voltage V
Figure 15
Figure 16
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COMMON-MODE REJECTION RATIO vs FREQUENCY
140 CMRR Common-Mode Rejection Ratio dB k SVR Supply Voltage Rejection Ratio dB VCC = 15 V VCM = 10 V TA = 25C 160 TA = 25C 140 120 100 80 60 40 20 0 Positive Supply
SUPPLY VOLTAGE REJECTION RATIO vs FREQUENCY
120
100 LT1037
Negative Supply
80 LT1007 60
40 103
104
105 f Frequency Hz
106
107
10
102
103 104 105 106 f Frequency Hz
107
108
Figure 17
LT1007
Figure 18
LT1037
SLEW RATE, PHASE MARGIN AND GAIN BANDWIDTH PRODUCT vs FREE-AIR TEMPERATURE
70 m m Phase Margin m 60 Gain Bandwidth Product 9 m m Phase Margin
SLEW RATE, PHASE MARGIN AND GAIN BANDWIDTH PRODUCT vs FREE-AIR TEMPERATURE
VCC = 15 V CL = 100 pF 60 m 70 Gain Bandwidth Product
s SR Slew Rate V/s
SR Slew Rate V/s s

50 3 SR 2
(f = 100 kHz) GBW
50 60 (f = 100 kHz) GBW 50 SR 15
20
VCC = 15 V CL = 100 pF 1 50 25 0 25 50 75 100 TA Free-Air Temperature C 125
10 50
25
125
Figure 19
Figure 20
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EQUIVALENT INPUT NOISE VOLTAGE vs FREE-AIR TEMPERATURE
5 VCC = 15 V 4 f = 0.01 Hz to 1 Hz
nV/ Hz Vn V n Equivalent Input Noise Voltage nV/Hz
f = 10 Hz 3 f = 1kHz 2
0 50
25
125
V Vn nV/ Hz n Noise Voltage 20 nV/Hz
EQUIVALENT INPUT NOISE VOLTAGE OVER A 100-SECOND TIME PERIOD
20
40 60 t Time s
80
100
Figure 21
EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY
10 VCC = 15 V TA = 25C 30
Figure 22
Vn V n Equivalent Input Noise Voltage nV/Hz nV/ Hz
V Vn n RMS Noise Voltage V
BROADBAND NOISE VOLTAGE 0.1 Hz TO INDICATED FREQUENCY
100
VCC = 15 V TA = 25C 1
10
Maximum 3 1/f Corner = 2 Hz 0.1 0.1 Typical
0.1
10 100 f Frequency Hz
1000
0.01 0.1
1 10 B Bandwidth kHz
100
Figure 23
Figure 24
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EQUIVALENT INPUT NOISE VOLTAGE vs SUPPLY VOLTAGE
5 TA = 25C 4
Vn V n RMS Voltage Noise Density nV/Hz nV/ Hz
I In pA/Hz A/ Hz n RMS Noise Current Density p
EQUIVALENT INPUT NOISE CURRENT vs FREQUENCY

10 VCC = 15 V
f = 10 Hz
Maximum 1
f = 1 kHz 2
0.3
1/f Corner = 120 Hz
Typical
10 15 20 VCC Supply Voltage V
25
0.1 10
100 1k f Frequency Hz
10 k
Figure 25
TOTAL NOISE VOLTAGE vs SOURCE RESISTANCE
50 VCC = 15 V TA = 25C IIOS OS Short Circuit Current mA 40 30 20 10 VCC = 15 V 0 10 20 30 40 0 1
Figure 26
SHORT-CIRCUIT OUTPUT CURRENT vs ELAPSED TIME
V Vn nV/ Hz n Total Noise Voltage nV/Hz
1000
TA = 55C TA = 25C TA = 125C
100
RS = 2R At 1 kHz
At 10 Hz 10
Resistor Noise Only 1 0.1 1 10 RS Source Resistance k

100
TA = 125C TA = 25C TA = 55C 2 3
50
Time From Output Short to Ground minutes
Figure 27
Figure 28
14
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SUPPLY CURRENT vs SUPPLY VOLTAGE
4 100
CLOSED-LOOP OUTPUT IMPEDANCE vs FREQUENCY
Zo z o Output Impedance
10 LT1007 AV = 1000 1 LT1037 AV = 1000
ICC I CC Supply Current mA
TA = 125C TA = 25C TA = 55C
0.1 LT1007 AV = 1 0.01
LT1037 AV = 5 VCC = 15 V IO = 1 mA TA = 25C
0 0
5 10 15 VCC Supply Voltage V
20
0.001 10
100
1k 10 k f Frequency Hz
100 k
1M
Figure 29
LT1037
Figure 30
LT1037
VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE

80 60 VO Output Voltage mV VO 40 20 0 20 40 60 VCC = 15 V AV = 5 CL = 15 pF TA = 25C 0 200 400 600 800 1000 1200 1400 1600 t Time ns 20 15 10 5 0 5
VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE

VCC = 15 V AV = 5 TA = 25C
V VO O Output Voltage mV
10 15
80
20 0 1 2 3 4 5 t Time s 6 7 8
Figure 31
Figure 32
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LT1007 LT1007
VOLTAGE-FOLLOWER SMALL-SIGNAL PULSE RESPONSE

80 60 VO Output Voltage mV VO 40 20 0 20 40 60 80 VCC = 15 V AV = 1 CL = 15 pF TA = 25C VO Output Voltage mV VO 8 6 4 2 0 2 4 6 8
VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE

VCC = 15 V AV = 1 TA = 25C

0 0.5 1 1.5 2 2.5 t Time s 3 3.5 4
10
12
14
16
t Time s
Figure 33
Figure 34
APPLICATION INFORMATION general

The LT1007- and LT1037-series devices may be inserted directly into OP-07, OP-27, OP-37, and 5534 sockets with or without removal of external-compensation or nulling components. In addition, the LT1007 and LT1037 may be fitted to A741 sockets by removing or modifying external nulling components.
offset voltage adjustment

The input offset voltage and its change with temperature of the LT1007 and LT1037 are permanently trimmed to a low level at wafer testing . However, if further adjustment of VIO is necessary, the use of a 10-k nulling potentiometer, as shown in Figure 35, will not degrade drift with temperature. Trimming to a value other than zero creates a drift of VIO/300 V/C (e.g., if VIO is adjusted to 300 V, the change in temperature coefficient will be 1 V/C). The adjustment range with a 10-k potentiometer is approximately 2.5 mV. If a smaller adjustment range is needed, the sensitivity and resolution of the nulling can be improved by using a smaller potentiometer in conjunction with fixed resistors. The example in Figure 36 has an approximate null range of 200 V.
offset voltage and drift

Unless proper care is exercised, thermocouple effects at the contacts to the input terminals, caused by temperature gradients across dissimilar metals, can exceed the inherent temperature coefficient of the amplifier. Air currents should be minimized, package leads should be short, input leads should be close together, and input leads should be at the same temperature.
16
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APPLICATION INFORMATION
1 k VCC + 10 k VCC + 4.7 k 4.7 k IN OUT + + IN + IN + VCC 4 VCC
Figure 35. Standard Adjustment
Figure 36. Improved Sensitivity Adjustment
The circuit shown in Figure 37 can be used to measure offset voltage. In addition, with the supply voltages increased to 20 V, it can be used as the burn-in configuration for the LT1007 and LT1037. When RF 100 and the input is driven with a fast large-signal pulse ( > 1 V), the output waveform will be as shown in Figure 38. During the fast-feedthrough-like portion of the output, the input protection diodes effectively short the output to the input and a current, limited only by the output short-circuit protection, is drawn by the signal generator. When RF is 500 , the output is capable of handling the current requirements (IL 20 mA at 10 V), the amplifier stays in its active mode, and a smooth transition occurs. When RF is > 2 k, a pole will be created with RF and the amplifiers input capacitance, creating additional phase shift and reducing the phase margin. A small capacitor (20 pF to 50 pF) in parallel with RF will eliminate this problem.
50 k 15 V
100 +
VO
RF
50 k
15 V VO = 1000 VOS
Resistors must have low thermoelectric potential
Figure 37. Test Circuit for Offset Voltage and Offset Voltage Drift With Temperature
Figure 38. Pulse Operation
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OUT Output 2.8 V /s 17
IN

APPLICATION INFORMATION noise testing

Figure 39 shows a test circuit for 0.1-Hz to 10-Hz peak-to-peak noise measurement of the LT1007 and LT1037. The frequency response of this noise tester indicates that eeethe 0.1 Hz corner is defined by only one zero. Because the time limit acts as an additional zero to eliminate noise contributions from the frequency band below 0.1 Hz, the test time to measure 0.1-Hz to 10-Hz noise should not exceed 10 seconds.
0.1 Hz to 10 Hz p-p NOISE TESTER FREQUENCY RESPONSE
100
90 80 Gain dB
70 60 50 40 30 0.01
0.1
1 Frequency Hz
10
100
0.1 F
Device under test NOTE: All capacitor values are for non-polarized capacitors only.
18
+ 2 k + 4.7 F LT1001 100 k 2.2 F 110 k 4.3 k 22 F Scope x1 RIN = 1 M Voltage Gain = 50,000 24.3 k 0.1 F
10
100 k
Figure 39. 0.1-Hz To 10-Hz Noise Test Circuit
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Special test precautions are required to measure the typical 60-nV peak-to-peak noise performance of the LT1007 and LT1037: 1. The device should be warmed up for at least five minutes. As the operational amplifier warms up, the offset voltage typically changes 3 V, due to the chip temperature increasing 10 C to 20 C from the moment the power supplies are turned on. In the 10-second measurement interval, these temperature-induced effects can easily exceed tens of nanovolts. 2. The device must be well shielded from air currents to eliminate thermoelectric effects. In excess of a few nanovolts, thermoelectric effects would invalidate the measurements. 3. Sudden motion in the vicinity of the device can produce a feedthrough effect that increases observed noise. When measuring noise on a large number of units, a noise-voltage density test is recommended. A 10-Hz noise-voltage density measurement will correlate well with a 0.1-Hz to 10-Hz peak-to-peak noise reading since both results are determined by the white noise and the location of the 1/f corner frequency. Figure 40 shows a circuit that measures noise current and presents the formula for calculating noise current.
10 k 100 500 k eno + In nV) ] + [vn 1*M(130 W x 100
2 2 1 2
500 k
Figure 40. Noise Test Circuit The LT1007 and LT1037 achieve low noise, in part, by operating the input stage at 120 A versus the typical 10 A for most other operational amplifiers. Voltage noise is directly proportional to the square root of the stage current; therefore, the LT1007 and LT1037 noise current is relatively high. At low frequencies, the low 1/f current-noise corner frequency ( 120 Hz) minimizes noise current to some extent. In most practical applications, however, noise current will not limit system performance; this is illustrated in Figure 27, where: total noise = [(noise voltage)2(noise current x RS)2 + (resistor noise)2]1/2 Three regions can be identified as a function of source resistance: (i) (ii) (iii) RS 400 RS = 400 to 50 k at 1 kHz RS = 400 to 8 k at 10 kHz RS > 50 at 1 kHz RS > 8 k at 10 Hz Voltage noise dominates in region (i) Resistor noise dominates in region (ii) Current noise dominates in region (iii)
The LT1007 and LT1037 should not be used in region (iii) where total system noise is at least six times higher than the noise voltage of the operational amplifier (i.e., the low-voltage noise specification is completely wasted).
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19

The sine wave generator application shown below, utilizes the low-noise and low-distortion characteristics of the LT1037.
430 2
#327 Lamp
1 2 RC R =1591.5 0.1 % C = 0.1 F 0.1 % f
TOTAL HARMONIC DISTORTION 0.0025% NOISE 0.001% AMPLITUDE = 8 V OUTPUT FREQUENCY = 1.000 kHz FOR VALUES GIVEN 0.4%
Figure 41. Ultra-Pure 1-kHz Sine-Wave Generator

EQUIVALENT INPUT NOISE VOLTAGE OVER A 10-SECOND PERIOD
f = 0.1 Hz to 10 Hz 365 1% Voltage Noise (20 nV/DIV) 340 k 1% 15 k 5% 15 V 2 7 6 Output 20 k Trim
IN +
5 4 6 t Time s
10
The high gain and wide bandwidth of the LT1037 and (LT1007) is useful in low-frequency high-closed-loop-gain amplifier applications. A typical precision operational amplifier may have an open loop gain of one million with 500 kHz bandwidth. As the gain error plot shows, this device is capable of 0.1% amplifying accuracy up to 0.3 Hz only. Even instrumentation range signals can vary at a faster rate. The LT1037s gain precision bandwidth product is 200 times higher, as shown.
Figure 42
Figure 43. Gain 1000 Amplifier With 0.01% Accuracy, DC to 5 Hz
20
DALLAS, TEXAS 75265
LT1037 6 Output C R LT1037 3 4 15 V RN60C Film Resistors

GAIN ERROR vs FREQUENCY CLOSED LOOP GAIN = 1000
1 Typical Precision Operational Amplifier LT1007 IN + 3 + LT1007 LT1037 0.01 15 V LOOP GAIN + CLOSED OPEN LOOP GAIN 100 Positive feedback to one of the nulling terminals creates approximately 5 V of hysteresis. Output can sink 16 mA. Input offset voltage is typically changed less than 5 V due to the feedback. 2 4 7 8 10 M 5%
15 V 365 1% 15 k 1% Output
0.1 Gain Error %
GAIN ERROR 0.001 0.1
1 10 f Frequency Hz
Figure 44.
10 k Trim 2
Figure 45. Microvolt Comparator With Hysteresis
340 k 1%
20 k 5%
LT1037 + 3
IN + The addition of the LT1007 doubles the amplifiers output drive to 33 mA. Gain accuracy is 0.02%, slightly degraded compared to above because of self heating of the LT1037 under load.
47 k Mag Phono Input
Figure 46. Precision Amplifier Drives 300- Load to 10 V
Figure 47. Phono Preamplifier
DALLAS, TEXAS 75265
15 5%
RL 300
100 pF 3
365 1%
6 LT1007 3 15 5%
7.8 k 15 V Output 10 V 100 2 7 LT1037 4 15 V 0.033 F 6
0.01 F 100 k
Output
All Resistors Metal Film
21

4.99 k 0.01
100 k
Tape Head Input
All Resistors Metal Film
Figure 48. Tape Head Amplifier

15 V +
10 F 10
1 k 33 100 F + 267
100 F + 2N2219A Chopped Detector Output 50 mA + 100 F 392 * 3 + 15 V 7 4 15 V 6 Output To Demodulator 392 Synchronous
IR Radiation
Optical Chopper
Photo-Conductive Infra-Red Detector HgCdTe Type Infra-Red Associates, Inc 13 at 77K
Figure 49. Infra-Red Detector Preamplifier
22
6 LT1037 Output
LT1007
316 k
392
1% metal film
DALLAS, TEXAS 75265

7.5 V 5 k 3 2.5 V LT1009 2 + 7 6
LT1007 4 7.5 V
Reference Out 350 Bridge 30.1 k
15 V 3 + 7 6 1 F 0 to 10 V Output 30.1 k
LT1007 10 k Zero Trim 2 4 15 V
2 +
7.5 V 7 6
LT1007 3 4 7.5 V
RN60C Film Resistors
Gain Trim
50 k
499
The LT1007 is capable of providing excitation current directly to bias the 350- bridge at 5 V. With only 5 V across the bridge (as opposed to the usual 10 V) total power dissipation and bridge warm-up drift is reduced. The bridge output signal is halved, but the LT1007 can amplify the reduced signal accurately.
Figure 50. Strain Gauge Signal Conditioner With Bridge Excitation
DALLAS, TEXAS 75265
23
IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TIs standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (CRITICAL APPLICATIONS). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMERS RISK. In order to minimize risks associated with the customers applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TIs publication of information regarding any third partys products or services does not constitute TIs approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated

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LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

SLOS017C D3195, FEBRUARY 1989 REVISED JANUARY 1993

DW PACKAGE (TOP VIEW)

LT1007A and LT1037A Specifications:

NC NC VIO TRIM IN IN + VCC NC NC

NC NC VIO TRIM VCC+ OUT NC NC NC

JG OR P PACKAGE (TOP VIEW)

VIO TRIM IN IN + VCC

VIO TRIM VCC + OUT NC

Copyright 1993, Texas Instruments Incorporated

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

This datasheet has been downloaded from http://www.digchip.com at this page

SLOS017C D3195, FEBRUARY 1989 REVISED JANUARY 1993

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

recommended operating conditions

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

electrical characteristics, VCC = 15 V

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

electrical characteristics, VCC = 15 V

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

operating characteristics, VCC = 15 V, TA = 25 C

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

TYPICAL CHARACTERISTICS table of graphs

Differential voltage amplification

VID CMRR kSVR SR m

Equivalent input noise voltage

In GBW IOS ICC zo

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

INPUT OFFSET VOLTAGE vs TIME AFTER POWER ON

4 DW, JG, or P Package 2

Time After Power On minutes

IIO Input Offset Current mA V IO

5 0.2 V/Month Trend Line

20 LT1007, LT1037 10 LT1007A, LT1037A 0 75 50 25 0 25 50 75 100 125

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE

20 LT1007M, LT1037M 10 LT1007AM, LT1037AM 0

25 0 25 50 75 100 125 TA Free-Air Temperature C

4 3 2 1 25 VCC = 3 V to 20 V Negative Limit

1.5 0 100 300 1k 3k 10 k

0 25 50 75 100 TA Free-Air Temperature C

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

LT1007, LT1007A, LT1037, LT1037A LOW-NOISE, HIGH-SPEED, PRECISION OPERATIONAL AMPLIFIERS

DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREQUENCY

16 LT1037 12 LT1007 8 4 0 VCC = 25C TA = 25C 1k 10 k 100 k 1M f Frequency Hz 10 M

DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY

DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY

POST OFFICE BOX 655303