2010 IEEE EMC Symposium

Introduction to the Partial Element Equivalent Circuit (PEEC) Technique (MO-AM-5) G. Antonini, A. E. Ruehli+, F. Ferranti
degli Studi dellAquila, ITALY + Emeritus IBM, IBM T. J. Watson Research Center, USA
Ghent Universit` a

University, BELGIUM

Slide 1

Overview

Introduction to Partial Element Equivalent Circuit (PEEC) Method PEEC Fundamentals Assembling Equations by enforcing KVL and KCL Multi-function partial elements evaluation Complexity reduction, non-orthogonal formulation PEEC Model Examples Conclusions How can I get started with PEEC - References
2010 IEEE EMC Symposium Slide 2

EM and Circuit Solution Approaches

MAXWELL EQUATIONS

Differential Equation

Integral Equation

Direct Discretization Equivalent Circuit Discretization

Explicit or Implicit Solution

MNA Type Circuit Solver

Finite Difference, Volume

PEEC

CIRCUIT EQUATIONS

2010 IEEE EMC Symposium

Slide 3

PEEC fundamentals
Each current owing in volumes, located at a point r within v , and each charge on surfaces, located at a point r S on S produce, an induced effect at a point r at time t.

J(r,t) S v J(r,t) s(rS,t)

Inside the conductor, at a point r , at time t, the following equation holds A(r , t) J (r , t) i = E (r , t) (r , t) E (r , t) = t where E i (r , t) is the electric eld eventually incident in r at time t.
2010 IEEE EMC Symposium Slide 4

PEEC fundamentals
J (r , t) A(r , t) E (r , t) = + + (r , t) t
i

A(r , t) =

J (r , t ) dv |rr |

(r , t) =

1 4

(r , t ) dS |rr |

J (r, t) = 0 d (r, t) J (r, t) = n dt

inside conductors on surface of conductors

| r r | t =t r r c0 J (r , t) + E (r , t) = 4
i v

1 J (r , t ) 1 dv + t |rr | 4

(r , t ) dS |rr |

In the quasi-static case t = t.

2010 IEEE EMC Symposium Slide 5

PEEC fundamentals
The previous equations can be rewritten in the Laplace domain, in a more compact form, as: E (r , s) = (r , s) =
i

J (r , s) s J (r , s) es + dv + (r , s) 4 v |r r | (r , s) es 1 rS dS 4 S |r r | rv rS

J (r , s) = 0 J (r , s) = s (r , s) n

where = |r r |/c0 , s is the Laplace variable and c0 is the speed of light in the free space.

2010 IEEE EMC Symposium

Slide 6

Development of a PEEC solver

Five steps process
1. discretization of volumes into elementary volume cells and surfaces into elementary surface cells; 2. discretization of the Electric Field Integral Equation (EFIE); 3. circuit interpretation of the EFIE; 4. evaluation of partial elements describing magnetic and electric eld coupling (time consuming); 5. KVL+KCL solution of the linear system into the frequency or/and time domain (time consuming).
2010 IEEE EMC Symposium Slide 7

PEEC fundamentals
Conductor and dielectric volumes and surfaces are discretized in elementary volumes (hexahedra) and patches (quadrilaterals) respectively.
Jy

Jx

1
Q1

Currents are assumed owing in volume cells running into x, y, z directions Charges are assumed on the surface of conductors
2010 IEEE EMC Symposium Slide 8

PEEC fundamentals
The unknown quantities J (r , s) and (r , s) are approximated by a weighted sum of nite set of basis functions b R3 and p R: J (r , s) = (r , s) = where In (s) and Qm (s) are the basis function weights which must be determined at each angular frequency s Nv and Ns represent the number of volume and surface basis functions and the corresponding elementary volume and surface subregions
2010 IEEE EMC Symposium Slide 9

Nv

bn (r ) In (s)
n=1 Ns

pm (r ) Qm (s)
m=1

PEEC fundamentals
Nv n=1

E (r , s) =

bn (r ) In (s) s + 4
Ns m=1

Nv n=1

es bn (r n ) In (s) dVn + |r r n | Vn

+ (r , s) (r , s) = 1 4 es pm (r m ) Qm (s) dSm |r r m | Sm

The so-called Galerkins testing or weighting process is used to generate a system of equations for the unknowns weights In (s) , n = 1 Nv and Qm (s) , m = 1 Ns by enforcing the residuals of equations to be orthogonal to a set of weighting functions, chosen to be coincident with the basis functions.

2010 IEEE EMC Symposium

Slide 10

PEEC fundamentals

Each term of the EFIE is weighted and integrated over elementary volume cells Vi : f (r ) , bi (r )
Vi

Vi

f (r ) bi (r ) dVi

for i = 1 Nv

E i (r , s) + s 4
Nv n=1

Nv n=1 bn (r ) In (s)

+ dVn + (r , s) , bi (r )
Vi

es bn (r n ) In (s) |r r n | Vn

=0

2010 IEEE EMC Symposium

Slide 11

PEEC fundamentals
Choice of the basis and weighting functions for conductor volumes and conductor surfaces n u 0
Sn

bn (r ) =

if r Vn otherwise

n is the unit vector indicating the current orientation in volume where u Vn . pm (r ) =

1 Am

if r Am otherwise

2010 IEEE EMC Symposium

Slide 12

Enforcing Kirchho Voltage Law (KVL)

The previous equation is equivalent to Kirchhos voltage law (KVL) VOk = VRk + VLk VCk where: VOk = E lk
N i

VRk

lk = ILk = Rk ILk Sk
M + Qm (Pk,m Pk,m ) m=1

VLk = s
n=1

Lpkn ILn

VCk =

l and Sk are the length and the cross section of cell k and the coecient 1 Lpkn (s) = 4 Sk Sn
Vk

es k u n u dVn dVk |r k r n | Vn

represents the so called partial inductance between volume cells i and m.

2010 IEEE EMC Symposium Slide 13

Enforcing Kirchho Voltage Law (KCL)

The application of the Galerkins testing procedure to the equation of the electric scalar potential leads to write: = PQ Q = P 1 sQ = P 1 s

which allows to relate the potential of each surface cell to the displacement current due to charges located on the surface of cells. Kirchhos current law (KCL) is enforced to each node m. In the Laplace domain, it reads:
Nv

sQm
k=1

am,k ILk (s) = Ism (s)

where am,k = 1, +1, 0 depending on the connection and direction of branch k with respect to node m and Ism (s) represents the current source located at node m.
2010 IEEE EMC Symposium Slide 14

Example

Single zero thickness conductor with three nodes. Discretization process: 3 nodes, 3 potentials to innity k , k = 1, 2, 3 2 branches, 2 currents ILn , n = 1, 2

2010 IEEE EMC Symposium

Slide 15

Example
Equivalent circuit for magnetic eld coupling KVL is enforced to each mesh.

1 2 (R1 + sLp11 IL1 + sLp12 IL2 + V01 ) = 0 2 3 (R2 + sLp22 IL2 + sLp21 IL1 + V02 ) = 0 In a matrix form, KVL reads: A (s) RI L (s) sLp (s) I L (s) V 0 (s) = 0 where A is the connectivity matrix.
2010 IEEE EMC Symposium Slide 16

Electric eld coupling

1 = P11 Q1 + P12 Q2 + P13 Q3 2 = P21 Q1 + P22 Q2 + P23 Q3 3 = P31 Q1 + P32 Q2 + P33 Q3 Displacement currents I c = sQ = sP 1 Several decompositions of P 1 are possible. Ic1 Ic2 Ic3 1 P12 P13 = sQ1 = s 1 s Q2 s Q3 P11 P11 P11 1 P21 P23 = sQ2 = s 2 s Q1 s Q3 P22 P22 P22 1 P31 P32 = sQ3 = s 3 s Q1 s Q2 P33 P33 P33 I c = sD T I c
2010 IEEE EMC Symposium Slide 17

Electric eld coupling

In a matrix form, KCL reads: I c (s) At I L (s) = I s (s) where I s (s) represents the lumped current sources.
1 Ic 1 Ic 2 2 Ic 3 3

1 P

11

I1

1 P

22

I2

1 P

33

I3

Equivalent circuit for electric eld coupling

2010 IEEE EMC Symposium

Slide 18

PEEC equivalent circuit

1 Ic 1 R1 IL1 Lp11 sLp, 12 IL 2 V01
+ -

2 Ic 2

R2

+ -

IL 2

Lp22

sLp, 21 IL1 V02 +

3 Ic 3

1 P

11

I1

1 P

22

I2

1 P

I3

33

Partial element equivalent circuit Lumped linear and non linear elements can be connected to the equivalent circuit through nodes.

2010 IEEE EMC Symposium

Slide 19

Basic Derivation of PEEC Model

Unknowns quantities: 1. conductive currents owing in volumes iL ; 2. potentials to innity v . The magnetic eld and electric eld couplings are described by the partial inductance and coecient of potential matrices. uk um dvk dvm Lp km = 4Sk Sm vk vm | r k r m | Pkm 1 = 4 Ak Am 1 dAk dAm | rk rm |

Ak

Am

Dense matrices!!
2010 IEEE EMC Symposium Slide 20

Multi-Function Element Evaluation

vbk Sk lk rkm Sm lm im ik

Example: Evaluation of Partial Inductances Near and Far Coecients; High Accuracy Required!
Lp km Lp km = 4Sk Sm
vk vm

uk um dvk dvm | rk rm |

Near coecients Far coecients

lk lm uk um = 4rkm
2010 IEEE EMC Symposium

Slide 21

Full Wave solution: circuits have delays

Lp km = 4Sk Sm uk um dvk dvm | rk rm |

vk

vm

Spacing rkm delays the coupling 2 Cell Examples

vbk Sk lk rkm Sm lm im ik

Partial Lp Circuit Equation dik (t) dim (t ) + Lpkm vbk (t) = Lpkk dt dt
2010 IEEE EMC Symposium

where = rkm /c0

Slide 22

Full Wave Solution: P Elements with Delays

Pkm 1 = 4 Ak Am 1 dAk dAm | rk rm |

Ak

Am

Spacing rkm delays the coupling

2 Cell Examples
qk Ak rkm Am

qm

P Circuit Element Equation vk (t) = Pkk qk (t) + Pkm qm (t ) where = rkm /c0
2010 IEEE EMC Symposium Slide 23

PEEC Equivalent Circuit Model

Corner Capacitive Cell

i4

Lp 44

R4

3 1 p 33

1 p44 Lp R1 Lp 22 1 R2

i3 Lp R 2
3

11

33

Inductive Halfcell
i1 1 p11 i
2

1 p 22

Basic partial element for 3-D model

2010 IEEE EMC Symposium

Slide 24

Basic Derivation of PEEC Model

Advantages over other integral methods

The same formulation (equivalent circuit) can be used for both time and frequency domain analysis All the methods for circuit analysis can be used: nodal analysis, mesh analysis, Modied Nodal Analysis (MNA) Easy incorporation of linear and non linear lumped elements and/or electronic devices Spice-like solvers can be used eventually including delays
2010 IEEE EMC Symposium Slide 25

Validity of PEEC Solution

FREQUENTLY ASKED QUESTIONS

What is a Full Wave Solution? Highest Frequency, Fmax Given by Meshing Not Limited by Quasi Static Models (delay involved) What is a Full Spectrum Solution? Works for Low Frequencies, Including DC Limits of Lumped Circuit Element Solution? Same as Other Numerical Solution Techniques How Can We Add New Features? Very Flexible Circuit Based Solution Approach MNA (Spice) Circuit Stamps Technique
2010 IEEE EMC Symposium Slide 26

PEEC Model Spice Circuit Element

From Geometry to Circuit Representation

Zero Potential Ground Reference Node at Innity! N - Terminal Spice Circuit Element Included In Spice Input Language Syntax

I1

I2

I3

2010 IEEE EMC Symposium

Slide 27

PEEC Model Complexity Reduction

(Lp)PEEC . (Lp,R)PEEC 3D Capacitances

Low Impedance Power Supply Modeling

Signal Propagation Modeling

(Lp,C)PEEC

(Lp,P,R, ) PEEC GENERAL FULL WAVE PEEC MODEL

2010 IEEE EMC Symposium Slide 28

Basic PEEC Circuit Cell for Dielectrics

Coupled Loop For Two Basic PEEC Cells of a Non-Dispersive Dielectric Bar[1]
1 Ce1 Ic 1
+ + -

IL1

Lp11

sLp, 12 IL 2 V01 +

Ce 2 Ic 2

IL 2

Lp22

sLp, 21 IL1 V02 +

3 Ic 3

1 P

11

I1

1 P

22

I2

1 P

I3

33

PEEC equivalent circuit for dielectrics 1)Sk Excess capacitance Cek = 0 ( rl k

2010 IEEE EMC Symposium Slide 29

Non Orthogonal Extension

Non Orthogonal Formulation Formulation Work [2] Extension, Generalization of the PEEC Method Hexahedra: Very General Building Blocks Make Arbitrary Non-Rectangular Shapes
1 0 c 5 7 4 3 2

a
6
2010 IEEE EMC Symposium Slide 30

Fast Time Domain Solution

Delay Dierential Equation Formulation

Delayed Modied Nodal Analysis Formulation Multiple Lpij Delayed Inductive Couplings Multiple Pij Delayed Potential Couplings
Gi x(t i )+
i i

C0 x (t)+G0 x(t)+

Ci x (t i ) =
i

ui (t i )

Sparse L/U Circuit Matrix Solver, O(N 1.5 ) One Matrix Solve, Time Steps Back Substitutions Overall Solution Time O(N 2 ) Not O(N 3 )
2010 IEEE EMC Symposium Slide 31

Sparse Time Domain Solution

Sparse Circuit Matrix Solution

d i ( i - ) dt

*
X

Lp ij

(t- ) d Pij dt

V,I

Present Time

Past Time (Known)

2010 IEEE EMC Symposium

Slide 32

Lossy Transmission Line Test Example

R L = 50 Ohms
5 cm transmission line waveform comparison 0.25 PEEC PowerSpice 0.2

L = 50 mm

Voltage [V]

S = 20 m

0.15 0.1 0.05 0 0.05

Is W = 20 m

T = 1 m

0.1 0.15 0

0.5

1.5 2 Time [s]

2.5

3 x 10

3.5
9

Input Waveform Sine Square Current Source, Rise Time 100 ps, Fall Time 100 ps, Width 1.9 ns 20 non uniform cells along the length, 10 cells along the width, 1 cell along the thickness, largest Cell/Thickness to length ratio 1:4750 Cross Section: VFI Skin Eect Uniform Model
2010 IEEE EMC Symposium Slide 33

Lightning Protection System

x 10
4

Voltage [V]

4 Time [s]

7 x 10

8
5

ilightning

n imax ks t/2 = e n) (1 + ks

imax = 30kA, = 1, ks = t/1 with 1 = 0.5s, 2 = 10s and n = 2

2010 IEEE EMC Symposium

Slide 34

Interferometer for Gravitational Waves

Direct lightning stroke of a large structure constituted by a 100 m long semi-cylindrical covering (Virgo-Project CNRS-France+INFN-Italy (Cascina, Pisa, Italy))
40 35 30

Voltage [kV]

25 20 15 10

Striking point

Far ends 5 0 -5

10

20

30

40

50

60

70

80

90

100

Time [s]

2500 patches - 12000 spatial basis functions considering both currents and potentials to innity

2010 IEEE EMC Symposium

Slide 35

Connectors

6 5 4 3

x 10

Coupled Noise on Passive Pin 20 ground pins 20 ground pins 6 ground pins : 6 ground pins : : Near noise : Far noise Near noise Far noise

Voltage (V)

2 1 0 1 2 3 4 0 1 2 3 Time (ns) 4 5 6

2010 IEEE EMC Symposium

Slide 36

Summary
PEEC Model Evolution Excellent for Combined EM and Ckt. Modeling Helps Understand EM Problem Behavior, Couplings Etc. Inductance, Capacitance, Time and Frequency Domain Solutions Full Wave and Full Spectrum Solution (dc to daylight) PEEC Modeling and Solution Eciency Careful Algorithms With Engineering Accuracy Fast solvers (frequency and time domain) 3D PEEC Method Development is Continuing

2010 IEEE EMC Symposium

Slide 37

Recent PEEC Oriented Works

Original Full Wave Paper [3] Time Domain Paper [4] New Direct Spice Implementation [5] Capacitance Model [6] New GSI Skin Eect Model [7] Power Plane Modeling [8] Model Order Reduction [9, 10] Wavelets PEEC [11, 12, 13] Non Orthogonal PEEC [14, 15, 2] Time-Frequency domain FMM-PEEC approach [16, 17, 18] Dielectric modeling [1]
2010 IEEE EMC Symposium Slide 38

Recent PEEC Oriented Works

Dispersive and lossy dielectrics [19, 20, 21, 22] Broadband modeling [23, 24, 25, 26] Input-to-state stability of PEEC models [27] Ecient identication of independent loops in PEEC circuits [28] Parametric Model Order Reduction [29, 30]

2010 IEEE EMC Symposium

Slide 39

Some Recent Publications References

[1] A. E. Ruehli and H. Heeb. Circuit Models for Three-Dimensional Geometries Including Dielectrics. IEEE Transactions on Microwave Theory and Techniques, MTT-40(7):15071516, July 1992. [2] A.E. Ruehli, G. Antonini, J. Esch, J. Ekman, A.Mayo, A. Orlandi. Non-Orthogonal PEEC Formulation for Time and Frequency Domain EM and Circuit Modeling. IEEE Transactions on Electromagnetic Compatibility, 45(2):167176, May 2003. [3] A. E. Ruehli. Equivalent Circuit Models for Three Dimensional Multiconductor Systems. IEEE Transactions on Microwave Theory and Techniques, MTT-22(3):216221, March 1974. [4] W. Pinello, A. C. Cangellaris and A. E. Ruehli. Hybrid electromagnetic modeling of noise interactions in packaged electronics based on the partial-element equivalent circuit formulation. IEEE Transactions on Microwave Theory and Techniques, MTT-45(10):18891896, October 1997. [5] G. Wollenberg, A. G orisch. Analysis of 3-D interconnect structures with PEEC using SPICE. IEEE Transactions on Electromagnetic Compatibility, 41(2):412417, November 1999. [6] Y. C.Cao, Z-F Li, J-F Mao. A PEEC with a new capacitance model for circuit simulation of interconnects and packaging structures. IEEE Transactions on Microwave Theory and Techniques, 48(2):281287, February 2000. [7] K. Coperich, A. Ruehli and A. Cangellaris. Enhanced Skin Eect for Partial-Element Equivalent Circuit (PEEC) Models. IEEE Transactions on Microwave Theory and Techniques, 48(9):14351442, September 2000. [8] B. Archambeault. Using the partial element equivalent circuit PEEC sim. techn. to properly analyze power/ground plane EMI decoupling perf. In Proceedings ACES Symp., pages 423430, Monterey, CA, March 2000. [9] J. Cullum, A. Ruehli, T. Zhang. A method for reduced-order modeling and simulation of large interconnect circuits

2010 IEEE EMC Symposium

Slide 40

Some Recent Publications

and its application to PEEC models with retardation. IEEE Transactions on Circuits and Systems, II, 47(4):261373, April 2000. [10] M. Kamon, F. Wang, J. White. Generating nearly optimally compact models from Krylov-subspace based reduced-order models. IEEE Transactions on Circuits and Systems, II, 47(4):239248, 2000. [11] G. Antonini, A. Orlandi, A. Ruehli. Speed-up of PEEC method by using wavelet transform. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, Washington, DC, August 2000. [12] G. Antonini, A. Orlandi, A. Ruehli. Hartens Scheme for PEEC Method. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, Washington, CA, August 2001. [13] G. Antonini, A. Orlandi, A. Ruehli. Fast Iterative Solution for the Wavelet-PEEC Method. In Proc. of the International Zurich Symposium on Electromagnetic Compatibility, Zurich, SW, February 2001. [14] A. E. Ruehli, G. Antonini and A. Orlandi. Extension of the partial element equivalent circuit method to non-rectangular geometries. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, pages 728733, Seattle, Washington, August 1999. [15] G. Antonini, A. Ruehli, J. Esch. Non Orthogonal PEEC Formulation for Time and Frequency Domain Modeling. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, Minneapolis, MN, August 2002. [16] G Antonini. Fast Multipole Formulation for PEEC Frequency Domain Modeling. Applied Computational Electromagnetic Society Newsletter, 17(3):2238, November 2002. [17] G. Antonini, A. E. Ruehli. Fast Multipole and Multi-Function PEEC Methods. IEEE Transactions on Mobile Computing, 2(4), October-December 2003. [18] G. Antonini. Fast Multipole Method for Time Domain PEEC Analysis. IEEE Transactions on Mobile Computing, 2(4), October-December 2003.

2010 IEEE EMC Symposium

Slide 41

Some Recent Publications

[19] G. Antonini. PEEC Modelling of Debye Dispersive Dielectrics. In Electrical Engineering and Electromagnetics, pages 126133. WIT Press, C. A. Brebbia, D. Polyak Editors, 2003. [20] G. Antonini, A. E. Ruehli, A. Haridass. Including Dispersive Dielectrics in PEEC Models. In Digest of Electr. Perf. Electronic Packaging, Princeton, NJ, USA, October 2003. [21] G. Antonini, A. E. Ruehli, A. Haridass. PEEC equivalent circuits for dispersive dielectrics. In Proceedings of Piers-Progress in Electromagnetics Research Symposium, pages 767770, Pisa, Italy, March 2004. [22] G. Antonini, A. E. Ruehli and C. Yang. PEEC Modeling of Dispersive Dielectrics. IEEE Transactions on Advanced Packaging, 31(4):768, September 2008. [23] S. V. Kochetov, G. Wollenberg. Stability of full-wave PEEC models: reason for instabilities and approach for correction. IEEE Transactions on Electromagnetic Compatibility, 47(4):738748, November 2005. [24] G. Antonini, D. Deschrijver and T. Dhaene. A comparative study of vector tting and orthogonal vector titting techniques. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, Porland, OR, USA, August 2006. [25] S. V. Kochetov, G. Wollenberg. Stable and Eective Full-Wave PEEC Models by Full-Spectrum Convolution Macromodeling. IEEE Transactions on Electromagnetic Compatibility, 49(1):2534, February 2007. [26] G. Antonini, D. Deschrijver and T. Dhaene. Broadband rational macromodeling based on the adaptive frequency sampling algorithm and the Partial Element Equivalent Circuit method. IEEE Transactions on Electromagnetic Compatibility, 50(1):128137, February 2008. [27] G. Antonini and P. Pepe. Input-to-state stability analysis of Partial Element Equivalent Circuit models. IEEE Transactions on Circuits and Systems, I, 56(3):673684, March 2009. [28] G. Antonini, G. Miscione and D. Frigioni. Hybrid formulation of the equation systems of the 3-D PEEC model based on graph algorithms. IEEE Transactions on Circuits and Systems, I, 57(1):249 261, January 2010.

2010 IEEE EMC Symposium

Slide 42

Some Recent Publications

[29] F. Ferranti, G. Antonini, T. Dhaene and L. Knockaert. Passivity-Preserving Parameterized Model Order Reduction for PEEC-Based Full-Wave Analysis. In Proc. of Signal Propagation on Interconnects SPI10, Hildesheim, May 2010. [30] F. Ferranti, G. Antonini, T. Dhaene and L. Knockaert. Parameterized Model Order Reduction with Guaranteed Passivity for PEEC Circuits Analysis. In Proc. of the IEEE Int. Symp. on Electromagnetic Compatibility, Fort Lauderdale, 2010.

2010 IEEE EMC Symposium

Slide 43