NGTB15N120IHLWG IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged copackaged free wheeling diode with a low forward voltage.
Features

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Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are PbFree Devices

15 A, 1200 V VCEsat = 1.8 V Eoff = 0.56 mJ

C

Typical Applications

Inductive Heating Consumer Appliances Soft Switching

ABSOLUTE MAXIMUM RATINGS
Rating Collectoremitter voltage Collector current @ TC = 25C @ TC = 100C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25C @ TC = 100C Diode pulsed current, Tpulse limited by TJmax Gateemitter voltage Power Dissipation @ TC = 25C @ TC = 100C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8 from case for 5 seconds Symbol VCES IC Value 1200 30 15 120 Unit V A G

G E

ICM IF

A A

TO247 CASE 340L STYLE 4

30 15 100 $20 156 62.5 55 to +150 55 to +150 260

MARKING DIAGRAM

IFM VGE PD

A V W
15N120IHL AYWWG

TJ Tstg TSLD

C C C A Y WW G = Assembly Location = Year = Work Week = PbFree Package

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION
Device NGTB15N120IHLWG Package Shipping

TO247 30 Units / Rail (PbFree)

Semiconductor Components Industries, LLC, 2012

August, 2012 Rev. 1

Publication Order Number: NGTB15N120IHL/D

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THERMAL CHARACTERISTICS
Rating Thermal resistance junctiontocase, for IGBT Thermal resistance junctiontocase, for Diode Thermal resistance junctiontoambient Symbol RqJC RqJC RqJA Value 0.8 2.0 60 Unit C/W C/W C/W

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)

Parameter STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited Collectoremitter saturation voltage Gateemitter threshold voltage Collectoremitter cutoff current, gate emitter shortcircuited Gate leakage current, collectoremitter shortcircuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance Gate charge total Gate to emitter charge Gate to collector charge SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time Fall time Turnoff switching loss Turnoff delay time Fall time Turnoff switching loss DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150C VF 1.4 1.5 1.6 V TJ = 25C VCC = 600 V, IC = 15 A Rg = 15 W VGE = 0 V/ 15V TJ = 125C VCC = 600 V, IC = 15 A Rg = 15 W VGE = 0 V/ 15V td(off) tf Eoff td(off) tf Eoff 165 200 0.56 180 260 0.95 mJ mJ ns ns VCE = 600 V, IC = 15 A, VGE = 15 V VCE = 20 V, VGE = 0 V, f = 1 MHz Cies Coes Cres Qg Qge Qgc 3600 88 63 160 30 73 nC pF VGE = 0 V, IC = 500 mA VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 150C VGE = VCE, IC = 150 mA VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150C VGE = 20 V, VCE = 0 V V(BR)CES VCEsat VGE(th) ICES IGES 1200 4.5 1.8 2.0 5.5 2.2 6.5 0.5 2.0 100 V V V mA nA Test Conditions Symbol Min Typ Max Unit

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TYPICAL CHARACTERISTICS
70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 8V 7V 7 8 VCE, COLLECTOREMITTER VOLTAGE (V) 9V VGE = 17 to 11 V 10 V TJ = 25C 60 IC, COLLECTOR CURRENT (A) VGE = 17 to 11 V 50 40 9V 30 20 10 0 10 V TJ = 150C

8V 7V 0 1 2 3 4 5 6 7 8

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 1. Output Characteristics

70 IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 9V 7V 7 8 VGE = 17 to 11 V 10 V 60 IC, COLLECTOR CURRENT (A) 50 40

Figure 2. Output Characteristics

TJ = 40C

TJ = 150C 30 20 10 0

TJ = 25C

8V

10

15

VCE, COLLECTOREMITTER VOLTAGE (V)

VGE, GATEEMITTER VOLTAGE (V)

Figure 3. Output Characteristics

10,000 Cies IF, FORWARD CURRENT (A) C, CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 0

Figure 4. Typical Transfer Characteristics

1000

100 Coes Cres 10 0 25 50 75 100 125 150 175 200

TJ = 150C TJ = 25C

0.25

0.50

0.75

1.00

1.25

1.50

VCE, COLLECTOREMITTER VOLTAGE (V)

VF, FORWARD VOLTAGE (V)

Figure 5. Typical Capacitance

Figure 6. Diode Forward Characteristics

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TYPICAL CHARACTERISTICS
VGE, GATEEMITTER VOLTAGE (V) 200 V 400 V 600 V Eoff, TURNOFF SWITCHING LOSS (mJ) 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 1.2 1.0 0.8 0.6 0.4 0.2 0 VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W

20

40

60

80

100

120

140

160

QG, GATE CHARGE (nC)

TEMPERATURE (C)

Figure 7. Typical Gate Charge

Eoff, TURNOFF SWITCHING LOSS (mJ) 1000 tf SWITCHING TIME (ns) 100 td(off) 2.5 2.0 1.5 1.0 0.5 0

Figure 8. Energy Loss vs. Temperature

VCE = 600 V VGE = 15 V TJ = 150C Rg = 15 W

10

VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W 0 20 40 60 80 100 120 140 160

10 12

14

16 18

20

22 24

26

28

30 32

TEMPERATURE (C)

IC, COLLECTOR (A)

Figure 9. Switching Time vs. Temperature

Eoff, TURNOFF SWITCHING LOSS (mJ) 1000 tf SWITCHING TIME (ns) 100 td(off) 1.19 1.18 1.17 1.16 1.15 1.14 1.13 1.12 5 15

Figure 10. Energy Loss vs. IC

VCE = 600 V VGE = 15 V IC = 15 A TJ = 150C

10

VCE = 600 V VGE = 15 V TJ = 150C Rg = 15 W 8 10 12 14 16 18 20 22 24 26 28 30 32 IC, COLLECTOR (A)

25

35

45

55

65

75

85

Rg, GATE RESISTOR (W)

Figure 11. Switching Time vs. IC

Figure 12. Energy Loss vs. Rg

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TYPICAL CHARACTERISTICS
td(off) tf 100 Eoff, TURNOFF SWITCHING LOSS (mJ) 1000 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 375 425 475 525 575 625 VGE = 15 V IC = 15 A Rg = 15 W TJ = 150C 675 725 775 VCE, COLLECTOREMITTER VOLTAGE (V)

SWITCHING TIME (ns)

10

VCE = 600 V VGE = 15 V IC = 15 A TJ = 150C 5 15 25 35 45 55 65 75 85

Rg, GATE RESISTOR (W)

Figure 13. Switching Time vs. Rg

1000 tf SWITCHING TIME (ns) 100 td(off) 1000 IC, COLLECTOR CURRENT (A) 100 10 1 0.1 0.01

Figure 14. Energy Loss vs. VCE

IC(max) Pulsed 50 ms IC(max) Continuous dc operation Single Nonrepetitive Pulse TC = 25C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 VCE, COLLECTOREMITTER VOLTAGE (V) 100 ms 1 ms

10

VGE = 15 V IC = 15 A Rg = 15 W TJ = 150C 375 425 475 525 575 625 675 725 775

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 15. Switching Time vs. VCE

1000 IC, COLLECTOR CURRENT (A)

Figure 16. Safe Operating Area

100

10 VGE = 15 V, TC = 125C 1

10

100

1000

VCE, COLLECTOREMITTER VOLTAGE (V)

Figure 17. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS
0.1 50% Duty Cycle THERMAL RESPONSE (ZqJC) 20% 0.01 10% 5% 2% 1% Junction Ci = ti/Ri C1 C2 Cn Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.0001 0.001 0.01 0.1 1 10 R1 R2 Rn Case RqJA = 0.8

Ri (C/W) 0.03570 0.08061 0.140 0.190 0.237 0.114

ti (sec) 1.0E4 1.76E4 0.002 0.03 0.1 2.0

0.001

0.0001

Single Pulse 0.000001 0.00001

100

1000

PULSE TIME (sec)

Figure 18. IGBT Transient Thermal Impedance

10 THERMAL RESPONSE (ZqJC) 50% Duty Cycle 20% 10% 5% 2% 1% R1 R2 Rn RqJA = 2.0

Junction Ci = ti/Ri

Case

Ri (C/W) 0.25813 0.577 0.671 0.387 0.1057

ti (sec) 1.48E4 0.002 0.03 0.1 2.0

0.1

0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01

C1

C2

Cn Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC

0.001

0.1

10

100

1000

PULSE TIME (sec)

Figure 19. Diode Transient Thermal Impedance

Figure 20. Test Circuit for Switching Characteristics

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Figure 21. Definition of Turn On Waveform

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Figure 22. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS
TO247 CASE 340L02 ISSUE F
T B U L
4

C E

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q U W MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 GATE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123

N A
1 2 3

Q 0.63 (0.025) P Y
M

T B

F 2 PL

W D 3 PL 0.25 (0.010)
M

STYLE 4: PIN 1. 2. 3. 4.

Y Q

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NGTB15N120IHL/D