IRF510

Data Sheet January 2002

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17441.

Features
5.6A, 100V rDS(ON) = 0.540 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRF510 PACKAGE TO-220AB BRAND IRF510

Symbol
D

NOTE: When ordering, include the entire part number.

G

Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE

DRAIN (FLANGE)

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

IRF510
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF510 100 100 5.6 4 20 20 43 0.29 19 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 150oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw On Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S

TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 10) VGS = VDS, ID = 250A VDS = 95V, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) VGS = 20V VGS = 10V, ID = 3.4A (Figures 8, 9) VGS = 50V, ID = 3.4A (Figure 12) ID 5.6A, RGS = 24 , VDD = 50V, RL = 9 , VDD = 50V, VGS = 10V MOSFET switching times are essentially independent of operating temperature VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14) Gate charge is essentially independent of operating temperature. VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

MIN 100 2.0 5.6 1.3 -

TYP 0.4 2.0 8 25 15 12 5.0 2.0 3.0 135 80 20 3.5

MAX 4.0 25 250 100 0.54 12 63 7 59 30 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero-Gate Voltage Drain Current

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse-Transfer Capacitance Internal Drain Inductance

4.5

nH

Internal Source Inductance

LS

Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad

7.5

nH

Junction to Case Junction to Ambient

RJC RJA Free air operation

3.5 80

oC/W oC/W

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

IRF510
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM Test Conditions Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
D

MIN -

TYP -

MAX 5.6 20

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 5.6A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/s TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/s

4.6 0.17

96 0.4

2.5 200 0.83

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, start TJ = 25oC, L = 910H, RG = 25, peak IAS = 5.6A.

Typical Performance Curves Unless Otherwise Specied

1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 10

ID, DRAIN CURRENT (A) 125 50 75 100 TC , CASE TEMPERATURE (oC)

0 150 175 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

10 THERMAL IMPEDANCE (oC/W)

ZJC, TRANSIENT

0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE PDM

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 0.01 10-5 10-4 0.1 10-2 10-3 t1, RECTANGULAR PULSE DURATION (S) 1 10

t1 t2

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

IRF510 Typical Performance Curves Unless Otherwise Specied

100 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 10 100s 1ms 1 TC = 25oC TJ = 175oC SINGLE PULSE 1 10 102 103

(Continued)

10 VGS = 10V 8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 0 0 10 20 30 VGS = 4V 40 50 VDS , DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

0.1

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

10

VGS = 10V

ID, DRAIN CURRENT (A)

8 VGS = 8V 6 VGS = 7V 4 VGS = 6V 2 VGS = 5V 0 0 VGS = 4V 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10

ID(ON), ON-STATE DRAIN CURRENT (A)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

10

VDS 50V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

1 TJ = 175oC TJ = 25oC

0.1

10-2 0

2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V)

10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NORMALIZED ON RESISTANCE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

3.0

rDS(ON), DRAIN TO SOURCE

4 ON RESISTANCE ()

2.4

ID = 3.4A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

1.8

2 VGS = 10V VGS = 20V 1

1.2

0.6

0 0 4 8 12 16 20 ID, DRAIN CURRENT (A)

0 -60 -40

-20

20

40

60

80

100 120 140 160 180

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

IRF510 Typical Performance Curves Unless Otherwise Specied

1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A

(Continued)

500 VGS = 0V, f = 1MHz CISS = CGS + CGD 400 CRSS = CGD COSS CDS + CGD 300

1.05

0.95

C, CAPACITANCE (pF)

1.15

200

CISS COSS

0.85

100 CRSS

0.75 -60 -40 -20

20

40

60

80

100 120 140 160 180

0 1 2 5 10 2 5 102 VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2.5 gfs, TRANSCONDUCTANCE (S)

2.0

TJ = 25oC

ISD, SOURCE TO DRAIN CURRENT (A)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

100

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

10

1.5 TJ = 175oC 1.0

TJ = 175oC

0.5

TJ = 25oC 0.1 0

4 6 ID, DRAIN CURRENT (A)

10

0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V)

2.0

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 3.4A 16 VDS = 80V VDS = 50V VDS = 20V

12

4 6 Qg, GATE CHARGE (nC)

10

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

IRF510 Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS

+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

VDS (ISOLATED SUPPLY)

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k

0.3F

DUT 0

IG(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORM

2002 Fairchild Semiconductor Corporation

IRF510 Rev. B

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Rev. H4

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