MOS Capacitors: P-Type

D.K.
Schroder, Semiconductor Device Theory - 1

MOS Capacitors
-V
G1
V
G2
V
G3
p-Type
-V
G1
Accumulation
Layer
V
G2
Depletion
Region
V
G3
Inversion
Layer
|
s
|
s
|
s
D.K. Schroder, Semiconductor Device Theory - 1
Energy Band Diagram
When metal, oxide, and
semiconductor are
brought together, we get
the band diagram below
This band diagram is very
important; it will be used
over and over to discuss
MOS devices
Energy: l
Voltage or Potential:
E
n
e
r
g
y
V
o
l
t
a
g
e
E
C
E
V
E
F
E
i
E
V
E
C
Electron Affinity _
Work Function u
M
M O S
x
For SiO
2
: 9 eV
For Si: 1.1 eV
p-Type
Gate
Oxide
Energy and Potential Band Diagrams
To discuss MOS devices we need to understand band diagrams
Band diagrams are at the heart of MOS devices; difficult to
understand
Consider the energy band diagram as a potential band diagram
The substrate is grounded and a positive gate voltage V
G
is
applied to the gate
Part of V
G
is dropped across the oxide, V
ox
, and part across the
semiconductor, known as the surface potential, |
s
E
n
e
r
g
y
E
C
E
V
E
F
E
i
x
V
o
l
t
a
g
e
,

P
o
t
e
n
t
i
a
l
V
G
| = 0
|
F
x
V
ox
|
s
(Surface potential)
V
G
=V
ox
+|
s
Potential Band Diagram
Potentials
Semiconductor potential
(intrinsic energy level):
|, taken as the reference
potential | = 0
Surface potential (intrinsic
energy level at the surface): |
s
Fermi potential:
Oxide potential: V
ox
Gate voltage: V
G
V
G
= V
ox
+ |
s
V,
|
V
G
| = 0
|
F
0 W x
V
ox
|
s
t
ox
The Fermi level is flat, because there is no current
(assume the oxide is a perfect insulator)
|
|
.
|
\
|
=
i
A
F
n
N
q
kT
ln |
Band Diagrams
As the gate voltage is changed, the surface condition
changes from accumulation through depletion to
inversion
-V
G1
V
G2
V
G3
p-Type
-V
G1
Accumulation
Layer
V
G2
Depletion
Region
V
G3
Inversion
Layer
|
s
|
s
|
s
MOS-C Equations
The electron/hole densities are
Poissons equation is
where
Poissons equation can be written as
kT q
i
kT q
i
F F
e n n e n p
/ ) ( / ) (
;
| | | |
= =
(

=
+
=

+
i
A D
U U U U
o s
i
o s
A D
n
N N
e e
K
qn
K
N N n p q
dx
d
F F
) ( ) (
) (
c c
c
| |
F F F F
U U U U U U
Di
e e e e
L dx
U d

+ =
) (
2 2
2
2
1
kT q U kT q U kT q U
s s F F
/ , / , / | | | = = =
F F
U
i
A
i
U
i
D
i i
o s
Di
e
n
N
n
p
e
n
N
n
n
n q
kTK
L = = = = =

; ;
2
2
c
More Equations
Using the identity
gives
After integration
The electric field is then
| |
F F F F
U U U U U U
Di
e e e e
L dx
U d

+ =
) (
2 2
2
2
1
Di
F s
s s
L
U U F
q
kT
U
dx
dU
q
kT ) , (
= = c
2
2
2
2
1
|
.
|
\
|
=
dx
dU
dU
d
dx
U d
| | ) ( ) (
1
) (
2
2
F F F F F F
U U U U U U U U
Di
e e e e U e e
L dx
dU

+ + + =
|
.
|
\
|
( )
} }

+ =
|
.
|
\
|
U
U U U U U U
Di
dx dU
dU e e e e
L dx
dU
d
F F F F
0
) (
2
/
0
2
1
The F Function
The F function, F(U,U
F
), is proportional to the electric field
F(U
s
,U
F
) is proportional to the surface electric field
) 1 ( ) 1 ( ) , ( + + =

s
U U
s
U U
F s
U e e U e e U U F
s F s F
10
2
10
3
10
4
10
5
-0.2 0 0.2 0.4 0.6 0.8 1
F

(
U
s
,

U
F
)
|
s
(V)
A
c
c
u
m
u
l
a
t
i
o
n
Depletion
I
n
v
e
r
s
i
o
n
The F function
is the normalized
electric field
Charge
The surface can be accumulated, depleted, or inverted,
depending on the surface potential
Di
F s
o s s s o s s
L
U U F
q
kT
K U K Q
) , (
c c c = =
10
10
10
11
10
12
10
13
-0.2 0 0.2 0.4 0.6 0.8 1
|
Q
s
|
/
q

(
c
m
-
2
)
|
s
(V)
Accumulation
Depletion
Inversion
2|
F
0
5 10
11
1 10
12
-0.5 0 0.5 1 1.5
|
Q
s
|
/
q

(
c
m
-
2
)
V
G
(V)
Accumulation
Depletion
Inversion
V
T
(|
S
= 2|
F
)
2 /
~
s
e Q
s
|
s s
Q | ~
2 /
~
s
e Q
s
|
Surface Potential/Gate Voltage
The gate voltage can be changed over a wide range;
it is ultimately limited by oxide breakdown
The surface potential can only be varied over a range
approximately equal to the band gap potential E
G
/q
|
s
(Accumulation)
|
s
(Inversion)
|
s
(Flatband)
E
G
/q
-0.3
-0.1
0.1
0.3
0.5
0.7
0.9
1.1
-4 -3 -2 -1 0 1 2 3 4
S
u
r
f
a
c
e

P
o
t
e
n
t
i
a
l

(
V
)
Gate Voltage (V)
2|
F
Inversion
Depletion
Accumulation
Flatband
V
T
E
G
/
q
Di
F s
ox
o s
s s FB G
ox
s
ox
G
ox ox s FB G
L
U U F
q
kT
C
K
U V V
C
Q
C
Q
V V V V
) , (
; ;
c
| | + + = = = + + =
Capacitance
Capacitance is mea-
sured by applying a dc
voltage to bias the
device and an ac voltage
to measure the
capacitance
The time varying ac
voltage changes the
charge on the gate and
also the charge in the
semiconductor
What charge in the
inverted semiconductor
responds? Holes or
electrons?
C and Q are most commonly
in units of F/cm
2
and C/cm
2
!
V
G
v
G
~
p
C
ox
C
s
Q
G
Q
n
Q
b
Q
x
Minority
electrons
Majority
holes
C = dQ/dV
Which Carriers Respond?
Deep Depletion
Initially: no inversion
layer; to form inversion
layer, ehp need to be
thermally generated
t
V
G
p -Type
+ + +
- -
-
N
A
Initially: inversion layer;
inversion electrons are
not able to follow the
applied voltage. Majority
holes can follow.
V
G
p -Type
~
v
g
f ~ 0.01-1 MHz
++++++
High Frequency
Initially: inversion layer;
inversion electrons are
able to follow the applied
voltage v
g
by thermal
generation
V
G
p -Type
~
v
g
f <1 Hz
++++++
Low Frequency
MOS Capacitor
Capacitance consists of
C
ox
: oxide capacitance
C
p
: accumulation capacitance
C
b
: bulk (space-charge region) capacitance
C
n
: inversion capacitance
C
it
: interface trap capacitance
C
ox
C
p
C
b
C
n
C
it
p
MOS Capacitor
The capacitance is
G
G
dV
dQ
C =
it n b p
s
it s
ox
dQ dQ dQ dQ
d
dQ dQ
dV
C
+ + +
+
+
=
|
1
it n b p ox
C C C C C
C
+ + +
+
=
1 1
1
s ox
it s
G
it s
G
G
d dV
dQ dQ
dV
dQ dQ
dV
dQ
C
| +
+
=
+
= =
The charge is
) (
it n b p it s G
Q Q Q Q Q Q Q + + + = =
This gives
MOS Capacitance
Accumulation
C
p
>> C
ox
Depletion
C
b
~ C
ox
~ C
it
Inversion low frequency
C
n
>> C
ox
Inversion high frequency
C
b
~ C
ox
C
ox
Accumulation
C
ox
C
p
C
b
C
n
C
it
C
ox
Inversion - lf
C
ox
C
p
C
b
C
n
C
it
C
ox
C
p
C
b
C
n
C
it
C
b
C
ox
Inversion - hf
C
ox
C
p
C
b
C
n
C
it
C
ox
C
b
C
it
Depletion
Low-Frequency Capacitance
The capacitance from these equations
is the low-frequency capacitance,
because the assumption is that the
electrons in the inversion layer are
able to follow the ac gate voltage
) , (
)] 1 ( ) 1 ( [
2
F s
U U U U
Di
o s
s s
U U F
e e e e
L
K
U C
s F s F
+
=

c
s ox ox
s ox
ox
ox s
ox s
C C C
C
C C
C
C C
C C
C
/ 1
1
/ 1
+
=
+
=
+
=
0
0.2
0.4
0.6
0.8
1
-4 -2 0 2 4
C
/
C
o
x
V
G
(V)
|
s
= 2|
F
|
s
= |
F
Flatband
Accumul'n
Strong
Inversion
Depletion
Weak Invers.
s
s
s
s
s
dU
dQ
kT
q
d
dQ
C = =
|
High-Frequency Capacitance
At high-frequencies, the inversion layer electrons are
unable to follow the ac gate voltage
The slowly varying dc voltage allows an inversion layer to
form
( ) | |
) , (
) 1 /( ) 1 ( 1
2
,
F S
U U U U
Di
o s
S hf S
U U F
e e e e
L
K
U C
S F S F
o c + +
=

( )
( )( )
| |
}

=

S F
S
U
F
U U U
F S S
U
dU
U U F
U e e e
U U F U e
0
3
) , ( 2
1 1
) , ( / 1
o
0
0.2
0.4
0.6
0.8
1
-4 -2 0 2 4
C
/
C
o
x
V
G
(V)
lf
hf
Deep-Depletion Capacitance
In deep-depletion, the gate voltage is
applied so rapidly that the inversion layer
charge, Q
n
, has not yet formed, i.e., Q
n
= 0
The device will return to equilibrium due to
thermal electron-hole pair generation
For high-quality devices,
this can take minutes to hours
o
ox i FB G
ox
dd
V
C Q V V
C
C
) / ( 2
1
+
+
=
0
0.2
0.4
0.6
0.8
1
-4 -2 0 2 4
C
/
C
o
x
V
G
(V)
lf
dd
hf
Such devices are
used in charge-
coupled devices
Gate Depletion
Poly-Si gates are doped to 10
19
10
20
cm
-3
For positive gate voltages, the gate depletes slightly
Adds additional series capacitance, C
G
Leads to overall capacitance reduction in inversion
0
0.2
0.4
0.6
0.8
1
-4 -2 0 2 4
C
/
C
o
x
V
G
(V)
10
20
3x10
19
N
D
= 10
19
cm
-3
S ox G ox
ox
C C C C
C
C
/ / 1 + +
=
Non Ideal MOS Work Function
Work function difference, |
MS
q
S M
MS
) ( u u
= |
MS FB
V | =
|
|
.
|
\
|
~ =
i
A G
F F FB
n
N
q
kT
q
E
substr gate V ln
2
) ( ) ( | |
|
F
u
S
u
M
E
V,|
V
G
=V
FB
E
C
E
V
E
F
V
G
=0
SiO
2
and SiO
2
/Si Interface
Si, Si/SiO
2
interface, SiO
2
bulk, and oxide
defect structure
Si
D
B
Hydrogen
A
C
A: Si-Si Bond
(Oxygen Vacancy)
B: Dangling Bond
C: Si-H Bond
D: Si-OH Bond
Oxygen
Dangling Bond
This looks
really messy!
Oxide Charges/Interface Traps
Charge Type Location Cause Effect on Devices
(1) Interface SiO
2
/Si Dangling Junction Leakage Current
D
it
(cm
-2
eV
-1
) Trapped Interface Bonds Noise, Threshold Voltage
N
it
, Q
it
Charge Shift, Subthreshold Slope
(2) Fixed Close to Si
+
(?)
N
f
, Q
f
Charge SiO
2
/Si Threshold Voltage Shift
(cm
-2
, C/cm
2
) Interface
(3) Oxide In SiO
2
Trapped
N
ot
, Q
ot
Trapped Electrons Threshold Voltage Shift
Charge & Holes
(4) Mobile In SiO
2
Na, K, Li
N
m
, Q
m
Charge Threshold Voltage Shift
x x x x
+ + + +
+ +
(1)
(2)
(3)
(4)
SiO
2
Si
Non Ideal MOS Oxide Charge
Oxide charges, Q
ox
, Q
f
The flatband voltage due to oxide charge density
ox
(C/cm
3
) is
For a charge sheet Q
ox
(C/cm
2
) at distance x
1
in the oxide
For charge sheet Q
f
at x = t
ox
ox
ox
ox
t
ox
ox ox
FB
C
Q
t
x
dx x x
t
x
C
V
ox
1
0
1
) ( ) (
1
= =
}
o
} }
= =
ox ox
t
ox
ox ox
t
ox
o ox
FB
dx x
t
x
C
dx x x
K
V
0 0
) (
1
) (
1

c
ox
f
FB
C
Q
V =
Non Ideal MOS Interface States
Interface state charge, Q
it
Interface state charge depends on surface potential
Hence V
FB
also depends on |
s
Acceptors
Donors
0
0
+
ox
s it
FB
C
Q
V
) (|
=
E
C
E
i
E
F
E
V
-
0
0
Non Ideal MOS
The flatband voltage due to all effects is
Oxide charges and interface state charges are quite low
today and the oxide capacitance is high
Can neglect V
FB
components due to these charges
V
FB
mainly due to work function difference
ox
s it
t
ox
ox ox ox
f
MS FB
C
Q
dx x
t
x
C C
Q
V
ox
) (
) (
1
0
|
| =
}
|
|
.
|
\
|
= = ~
i
A G
F
G
MS FB
n
N
q
kT
q
E
q
E
V ln
2 2
| |
Displacement / Electric Field
Consider two solids, one with
dielectric constant K
1
and one
with dielectric constant K
2
They meet at a plane
The plane has a sheet charge
density of Q C/cm
2
The perpendicular flux
density Dis continuous
across the interface
For an oxide/semiconductor
interface with Q = 0
Q D D = ) (
2 1
) : (
1
1 1 1
field electric normal
K D
o
c
c c =
+
+
+
+
+
+
+
D
Q
K
1
K
2
Q K K
o o
=
2 2 1 1
c c c c
2 2 1 1
: 0 c c c c
o o
K K Q For = =
s s ox ox
K K c c =
Electric Field
The electric field in the semiconductor is
The electric field in the oxide is
At the oxide-semiconductor interface
With K
ox
= 3.9, K
s
= 11.7, c
s
= c
ox
/3
) ( ) ( ; ;
0
x W
K
qN
x dx
K
qN
d
K
qN
dx
d
o s
A
x
W
o s
A
o s
A
= = =
} }
c
c
c
c
c
c c
ox
C x
dx
d
c c
c
= = =
1
0 ) ( ;
ox
s
ox
s s s ox ox
K
K
K K c c c c = =
c
c
s
0 W x
c
ox
c
s
= c
ox
/3
Review Questions
What is the surface condition, i.e., p-type, n-type, etc,
for |
s
= |
F
?
Why is the surface potential excursion limited to
approximately the band gap potential?
When an MOS-C is biased into depletion or inversion, can
one measure the voltage drop across the semiconductor, |
s
?
What is the Fermi level behavior in the oxide?
Why can |
s
not be much higher than 2|
F
?
Why are inversion electrons unable to follow the high-
frequency applied signal?
Why does the high-frequency capacitance saturate for
positive gate voltages?
Does the deep-depletion C/C
ox
V
G
curve apply for high or
low frequencies?
Gate depletion adds to the oxide capacitance. What can be
done to eliminate this effect?
By how much does V
FB
change from an n
+
to a p
+
gate?

MOS Capacitors: P-Type

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D.K.

Schroder, Semiconductor Device Theory - 1

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