RF Manual 12Th

Experience high-performance analog
NXPs RF Manual makes design work much easier

NXPs RF Manual one of the most important reference tools on the market for todays RF designers features our complete range of RF products, from low to high power. With the new 12th edition of the RF Manual, weve made a great design tool even better. Weve broadened the scope of the document, adding new material that makes RF design simpler than ever. Weve updated the content on RF small-signal products, and have added a new section on RF power transistors.
New developments and new products Weve expanded the content to include several new developments and new products, including GPS LNAs with industry-leading sensitivity, ultra-low-noise LO generators, a highly efficient line-up of 1-GHz CATV modules, best-inclass medium-power MMICs, a comprehensive portfolio of satellite solutions (including IF gain blocks), and the worlds best RF power transistors for basestations, broadcast/ISM, and microwave applications. Interactive The online edition of the RF Manual continues to offer interactive features that link designers to more detailed information. Simply click on a product type and youre automatically taken to the corresponding product information page on the NXP website, where youll find data sheets, application notes, design-support documents, and more. To access the manual, go to www.nxp.com/rfmanual or just search for RF Manual. Im proud to present the latest edition of our RF Manual. It covers the entire range of our RF products in one comprehensive manual, and Im convinced that youll find even more ways to use the 12th edition in your daily design work. Kind regards,
John Croteau
Vice President & General Manager Business Line Analog Mixed Signal
RF Manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 12th edition 3
Contents
1. Applications & recommended products______________________________________________________________ 8 1.1 Global Positioning System (GPS) ________________________________________________________________ 8 1.2 A 2.4 GHz front-end for WLAN, Bluetooth, DECT, ZigBee, etc.__________________________________ 9 1.3 Low-cost cellular phone front-end for ODM/CEM designs_________________________________________ 10 1.4 Walkie-talkie, RF generic front-end with a single antenna_ _________________________________________ 11 1.5 Cordless phone (Analog)______________________________________________________________________ 12 1.6 E-metering, RF generic front-end with a single antenna___________________________________________ 14 1.7 Wireless Microphone _________________________________________________________________________ 15 1.8 Wireless USB ________________________________________________________________________________ 16 1.9 Active antenna_______________________________________________________________________________ 17 1.10 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ______ 18 1.11 Tire pressure monitoring system _______________________________________________________________ 19 1.12 Digital Audio Broadcasting (DAB)_ _____________________________________________________________ 20 1.13 Satellite outdoor unit, low noise noise block (LNB) for multiple users_ ______________________________ 21 1.14 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16)_ _____________________________________________________ 22 1.15 TV / VCR / DVD / HDD tuning__________________________________________________________________ 23 1.16 Antenna loop through ________________________________________________________________________ 24 1.17 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) __________________________________________ 25 1.18 CATV electrical (line extenders)_ _______________________________________________________________ 26 1.19 CATV optical (optical node with multiple out-ports) ______________________________________________ 27 1.20 Base stations (all cellular standards and frequenties & WiMAX infrastructure) _ ______________________ 28 1.21 Broadcast / ISM (industrial, scientific & medical) _________________________________________________ 30 1.22 Microwave products for Avionics, L- and S-band Radar applications _______________________________ 31 2. Focus applications & products_ _____________________________________________________________________ 34 2.1 Get the fastest TTFF with GPS LNAs that use proven QUBiC4X SiGe:C _____________________________ 34 2.2 A perfect match up to 20 GHz _________________________________________________________________ 35 2.3 NXP wideband LNA MMIC BGU7003 in SiGe:C process___________________________________________ 36 2.4 Ultra-low-noise LO generators for microwave radios______________________________________________ 37 2.5 Complete satellite portfolio for all LNB architectures _____________________________________________ 38 2.6 VSAT, 2-way communication via satellite ________________________________________________________ 40 2.7 NXP CATV C-family for the Chinese SARFT standard_ ____________________________________________ 42 2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks _____________________ 46 2.9 LDMOS technology optimized for high-power use and Doherty applications________________________ 48 2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN__________________________ 50 3. Product portfolio_ _________________________________________________________________________________ 54 3.1 New products________________________________________________________________________________ 54 3.2 RF diodes_ ___________________________________________________________________________________ 56 3.3 RF Bipolar transistors _________________________________________________________________________ 61 3.4 RF ICs ______________________________________________________________________________________ 64 3.5 RF MOS transistors __________________________________________________________________________ 67 3.6 RF Modules _________________________________________________________________________________ 71 3.7 RF power transistors _ ________________________________________________________________________ 73
NXP Semiconductors RF Manual 12th edition
4. Design-in tools____________________________________________________________________________________ 4.1 S-Parameters ________________________________________________________________________________ 4.2 Simulation models ___________________________________________________________________________ 4.3 Application notes_____________________________________________________________________________ 4.4 Demo boards_ _______________________________________________________________________________ 4.5 Samples of products in development ____________________________________________________________ 4.6 Samples of released products _________________________________________________________________ 4.7 Datasheets __________________________________________________________________________________ 4.8 Design-in support ____________________________________________________________________________ 4.9 NEW: interactive selection guides _____________________________________________________________ 5. Cross-references & replacements___________________________________________________________________ 5.1 Cross-references: Manufacturer types versus NXP types__________________________________________ 5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________ 6. Packing and packaging information_________________________________________________________________ 6.1 Packing quantities per package with relevant ordering code_______________________________________ 6.2 Marking codes list____________________________________________________________________________ 7. Abbreviations_ __________________________________________________________________________________________ 8. Contacts and web links____________________________________________________________________________ 9. Product index_____________________________________________________________________________________
78 78 78 79 79 79 79 79 79 79 80 80 86 90 90 92 94 95 96
Experience faster time to first fix with GPS LNAs

Look at BGU7005, chapter 2.1
1. Applications & recommended products

NXP RF Applications http://www.nxp.com/rf
1.1 Global Positioning System (GPS)

Application diagram
PA
mixer GSM
15 dB isolation
LNA GPS
brb201
Recommended products
Function Product RF bipolar transistor Wideband transistor Low noise wideband amplifier SiGe:C MMIC SiGe:C transistor Package SOT343 SOT343 SOT343R SOT343R SOT891 SOT886 SOT343F Type BFG425W BFG410W BGA2001 BGA2003 BGU7003 BGU7005 BFU725F
LNA
MMIC
RF transistor
Product highlight: BGU7005 SiGe:C MMIC

Get the fastest TTFF with GPS LNAs that use proven QUBiC4Xi SiGe:C. The BGU7005 is ideally suited for discrete implementation of the GPS front end. The BGU7005 has an enable functionality. In the powerdown mode the products consume less than 1 A.
Features
} Requires only 4 external components (including decoupling) to build complete GPS front-end. } Small size 6-pins SOT886 leadless package (1.45 x 1.0 x 0.5 mm3) } Low current consumption (5 mA) } Low noise figure (NF): 0.9 dB at 1.575 GHz } High insertion power gain: 16 dB at 1.575 GHz } Low current consumption in power-down mode (< 1 A) } ESD protection on all pins } Supply voltage: 1.5 V to 2.85 V, optimized for 1.8 V } Proven, robust QUBiC4X SiGe:C process technology (fT = 110 GHz)
1.2 A 2.4 GHz front-end for WLAN, Bluetooth, DECT, ZigBee, etc.
Application diagram
low pass lter antenna SPDT switch Tx medium power amplier
PActrl
APPLICATION CHIP SET
Rx bandpass lter LNA SPDT

bra502
Function SPDT switch Product RF diode PIN diode Package SOD523 SOD882T SOD882T Package SOT89 Type BAP51-02 BAP51LX BAP55LX Type BGA6589 BGA7124 BGA7127 Type BGA2003 BGA2001 BFU725F BGU7003
Function Medium power amplifier
Product
MMIC
Medium power amplifier
SOT908 Function Product MMIC LNA RF Transistor MMIC Low noise wideband amplifier SiGe:C transistor SiGe:C MMIC Package SOT343R SOT343R SOT343F SOT891
Product highlight: BGA6289 MMIC medium power amplifier

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium power gain blocks provides large bandwidth and high-quality performance in 2.4 GHz wireless applications.
Features
} 17 dBm output power } Single supply voltage needed
1.3 Low-cost cellular phone front-end for ODM/CEM designs

Application diagram
LNA
mixer
IF
antenna
Rx
buffer VCO LOW FREQUENCY CHIPSET
Tx
RF detector
power driver amplifier
buffer VCO
bra504
Function
RF detector
Product
RF schottky diode Low Cd schottky
Package
SOT323 SOD323 SOD882 SOT666
Type
1PS70SB84 1PS76SB17 1PS10SB82 1PS66SB82
Function
Product
Bipolar transistor Wideband transistor
Package
SOT343 SOT343 SOT343 Amplifier* SOT363 SOT363 Gen. purpose wideband ampl. SOT363
Type
BFG21W BFG425W BFG480W BGA2031/1 BGA2771 BGA2776
Driver MMIC
Function
Product
RF bipolar transistor Wideband transistor
Package
SOT343 SOT343 SOT343 SOT23 SOT416 SOT323
Type
BFG410W BFG425W BFG480W BFR520T BFR505T BFS540
Function
Mixer
Product
RF bipolar transistor MMIC Wideband transistor Linear mixer Low noise amplifier Gen. purpose amplifier Wideband transistor
Package
SOT343 SOT343 SOT343 SOT363
Type
BFG410W BFG425W BFG480W BGA2022
Buffer
Function
Product
Package
various** various** various** various** various** various** various**
Type
BAP50 BAP51 BAP55 BAP63 BAP64 BAP65 BAP1321
Function
Product
MMIC
Package
SOT343R SOT343R SOT363 SOT363 SOT363 SOT363
Type
BGA2001 BGA2003 BGA2771 BGA2776 PRF949 BFS17W
Antenna switch
RF diode
PIN diode
IF RF bipolar transistor
Function
VCO
Product
Varicap diodes Varicap diodes
Package
VCO varicap diodes VCxO varicap diodes SOD523 SOD523
Type
BB145B BB179
Function
Power amplifier
Product
Bipolar transistor MMIC Wideband transistor Amplifier* Gen. purpose wideband ampl.
Package
SOT343 SOT343 SOT363 SOT363 SOT363
Type
BFG21W BFG480W BGA2031/1 BGA2771 BGA2776
Function
VCxO
Product
Package
SOD523 SOD523
Type
BB198 BB199
Function
LNA
Product
MMIC Low noise wideband amplifier
Package
SOT343R SOT343R SOT363 SOT363
Type
BGA2001 BGA2003 BGA2011 BGA2012
* = 2 stage variable gain linear amplifier ** = also available in ultra small leadless package SOD882T.
Product highlight: BGA2771 MMIC General - purpose wideband amplifier

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. The BGA27xx series amplifier provides large bandwidth and high quality in wireless system applications.
10 NXP Semiconductors RF Manual 12th edition
Features
} Internally matched } Wide frequency range } Very flat gain } High output power } High linearity } Unconditionally stable
1.4 Walkie-talkie, RF generic front-end with a single antenna

Application diagram
antenna
filter
LNA
filter
mixer
buffer SPDT switch VCO LOW FREQUENCY CHIP SET
filter
PA
driver
VCO
bra850
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product RF bipolar transistor MMIC Function Product RF bipolar transistor MMIC Package SOD523 SOD323 various various Type BA277 BA591 BAP51* BAP1321* Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Gen. purpose SOT89 wideband ampl. Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 Type BB198 BB156
LNA
Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Wideband transistor Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363
Function Power amplifier Function VCO
Product MMIC
Driver
* = also available in ultra small leadless package SOD882T
Product Varicap diodes
VCO varicap diodes
Product highlight: PRF957 silicon NPN UHF wideband transistor

Silicon NPN UHF wideband transistor in a surface mount 3-pin SOT323 package is primarily intended for wideband applications in the RF front end. The transistor is widely built as LNA, power amplifier, driver and buffer in the UHF band application.
Features
} Small 3-pin plastic surface mounted package } Low noise (1.3 dB at 1 GHz) and high power gain (15 dB at 1 GHz) } Gold metallization ensures excellent reliability
11
1.5 Cordless Phone (Analog)

Application diagram
antenna
LNA
filter
mixer
filter
buffer SPDT switch VCO
CHIPSET
filter
PA
driver
VCO
bra910
Function RF Switch Product RF diode PIN Diode Package various* various* various* Package SOT23 SOT23 SOT323 SOT343 SOT343F Package SOT323 SOT143 SOT343 SOT343 SOT343 SOT363 Type BAP51 BAP63 BAP64 Type BFT25 PBR951 PRF957 BFG425W BFG424F Type PRF957 BFG540 BFG410W BFG425W BFG480W BGA2022 Function VCO Product Varicap diodes VCO varicap diodes Package SOD323 SOD523 SOD323 SOD523 Package SOT23 SOT323 SOT343 SOT343F Type BB131 BB145B BB148 BB149 Type PBR951 PRF957 BFG425W BFG424F
Function
Product RF bipolar transistor Wideband transistor
Function Driver/Buffer
Product RF bipolar transistor Wideband transistor
LNA
Function
Product RF bipolar transistor MMIC Wideband transistor Linear mixer
Mixer
* = also available in ultra small leadless package SOD882T.
Product highlight: BAP64xx PIN diode for RF switch

Operating up to 3 GHz with high-voltage handling capabilities, NXPs PIN diodes are ideal for a wide range of wireless communication application. Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options including SOD523, SOD323 and leadless SOD882T.
Features
} Operate up to 3 GHz } High isolation, low distortion, low insertion loss } Low forward resistance (Rd) and diode capacitance (Cd) } Ultra-small package options
Cordless Phone (DECT front-end)

Application diagram
(DECT in-house basestation)

Application diagram
antenna
LNA
antenna
LNA
filter
mixer
filter
buffer SPDT switch VCO
switch
CHIPSET
CHIPSET
filter
PA
filter
PA
driver
VCO
bra911
bra910
Function Product Package various various various various various various Package SOT343 SOT343F SOT343F SOT891 Type BAP51* BAP55* BAP142* BAP63* BAP64* BAP1321* Type BFG425W BFG424F BFU725F BGU7003
Function Product Package various various various various various various Package SOT343 SOT343F SOT343F SOT891 Package SOT343 SOT343 SOT343 SOT363 Package VCO varicap diodes SOD523 Package SOT343 SOT343F SOT343 SOT343F Type BAP51* BAP55* BAP142* BAP63* BAP64* BAP1321* Type BFG425W BFG424F BFU725F BGU7003 Type BFG410W BFG425W BFG480W BGA2022 Type BB145B Type BFG425W BFG424F BFG480W BFU725F
RF Switch
RF diode
PIN Diode
RF Switch
RF diode
PIN Diode
Function
Product RF bipolar transistor RF transistor MMIC
Function
LNA
Wideband transistor SiGe:C transistor SiGe:C MMIC
Product RF bipolar transistor RF transistor MMIC
LNA
Wideband transistor SiGe:C transistor SiGe:C MMIC
Function Mixer
Function VCO Function
Product Varicap diodes Product RF bipolar transistor RF transistor
Driver/Buffer
Wideband transistor SiGe:C transistor
Product highlight: BFG425W NPN wideband transistor

NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.
Features
} Very high maximum power gain (20 dB for 2 GHz) } Low noise figure (1.2 dB for 2 GHz) } High transition frequency (25 GHz) } Emitter is thermal lead } Low feedback capacitance (95 fF)
13
1.6 E-metering, RF generic front-end with a single antenna

Application diagram
antenna
filter
LNA
filter
mixer
buffer SPDT switch VCO E-METERING CHIP SET
filter
MPA
driver
VCO
bra850
Function SPDT Switch Product RF diode Bandswitch diode PIN diode Function Product Package SOD523 SOD323 various various Type BA277 BA591 BAP51* BAP1321* Type PBR951 PRF957 PRF947 BFU725F BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package Gen. purpose wideband ampl. SOT89 SOT908 SOT908 Package SOD523 SOD323 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7127 Type BB198 BB156
LNA
Package SOT23 SOT323 SOT323 RF transistor SiGe:C transistor SOT343F SOT343R Low noise MMIC wideband ampl. SOT343R RF bipolar transistor Wideband transistor Package SOT323 SOT23 SOT363 SOT363 SOT363
Function Medium power amplifier
Product
Function
Product RF bipolar transistor MMIC
Driver
Wideband transistor Amplifier Gen. purpose wideband ampl.
MMIC
Function VCO
VCO varicap diodes
Product highlight: BGA7127 MMIC medium power amplifier

The BGA7127 MMIC is a one-stage driver amplifier, offered in a lowcost ultra small SOT908 leadless package. It delivers 27 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.
Features
} 400 MHz to 2700 MHz frequency operating range } 16 dB small signal gain at 2 GHz } 27 dBm output power at 1 dB gain compression } Integrated active biasing } 3.3 V / 5 V single supply operation } Simple quiescent current adjustment } 1 A shutdown mode
1.7 Wireless Microphone

Application diagram
antenna PA driver VCO IC
bra912
Function Product Package SOT23 SOT323 SOT23 SOT323 SOT343 SOT343 SOT343 Package SOD523 SOD323 Type BFT93 BFT93W PBR951 PRF957 BFG21W BFG425W BFG480W Type BB145B BB149
PA/Driver
RF bipolar transistor
Wideband transistor
Function VCO
VCO varicap diodes
Operation frequency: 70M - 72 M 150 MHz - 270 MHz 470 MHz - 1000 MHz 2400 MHz

NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343 package.
Features
} High power gain } Low noise figure } High efficiency } High transition frequency } Emitter is thermal lead } Low feedback capacitance } Linear and non-linear operation
15
1.8 Wireless USB

Application diagram
antenna
band pass
LNA
SPDT switch PA band pass
CHIPSET
brb024
Function LNA Function Product RF transistor Product SiGe:C transistor Package SOT343F Package various various various SOD882T SOD882T various Type BFU725F Type BAP51* BAP63* BAP64* BAP55LX BAP142LX BAP1321*
SPDT Switch
RF diode
PIN diode
Product highlight: BFU725F SiGe:C microwave NPN transistor

Meet the trend towards higher frequencies. The BFU725F provides high switching frequencies plus extreme high gain and low noise.
Features
} Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) } High switching frequency (fT > 100 GHz / fMAX > 150 GHz) } Plastic surface-mount SOT343F package
Benefits
} SiGe:C process delivers high switching frequency from a siliconbased device } Cost-effective alternative to GaAs devices } RoHS compliant
1.9 Active antenna

Application diagram
antenna 1st stage LNA 2nd stage LNA 3rd stage LNA
CHIPSET
brb215
Function 1st stage LNA Function 2nd stage LNA Product MMIC Low noise wideband amplifier Package SOT343R SOT343R Package SOT363 SOT363 SOT363 SOT363 Package SOT343F SOT891 Type BGA2001 BGA2003 Type BGM1013 BGM1011 BGA2715 BGA2748 Type BFU725F BGU7003
Product MMIC General purpose wideband amplifier
Function 3 rd stage LNA
Product RF transistor MMIC
SiGe:C transistor SiGe:C MMIC
Product highlight: BGU7003 SiGe:C MMIC

Manufactured in NXPs latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.
Features
} Low-noise, high-gain microwave MMIC } Maximum stable gain = 19 dB at 1.575 GHz } 110-GHz fT-Silicon Germanium technology } Optimized performance at low (5-mA) supply current } Extemely thin, leadless 6-pin SOT891 package } Integrated biasing and shutdown for easy integration
17
1.10 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram
antenna receiver filter LNA filter mixer LOW FREQUENCY CHIP SET buffer VCO antenna transmitter filter PA driver VCO LOW FREQUENCY CHIP SET
bra851
Function Product RF bipolar transistor MMIC Function Product RF bipolar transistor MMIC Package SOT23 SOT323 SOT323 Low noise SOT343R wideband ampl. SOT343R Wideband transistor Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363 Package SOD323 SOD323 SOD523 SOD323 Type PBR951 PRF957 PRF947 BGA2001 BGA2003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156 Function Mixer Product RF bipolar transistor MMIC Function Buffer Product RF bipolar transistor Wideband transistor Wideband transistor Linear mixer Package SOT343 SOT343 SOT343 SOT363 Package SOT23 SOT323 SOT323 SOT416 Package SOT323 SOT23 SOT363 SOT363 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Type PBR951 PRF957 PRF947 PRF949 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776
LNA
Driver
Function Power amplifier
Function VCO
Product Varicap diodes VCO varicap diodes
Wideband transistor Amplifier Gen. purpose wideband ampl.
Product highlight: NXP varicap diodes for VCO

Varicap diodes are principally used as voltage varicap capacitors with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCO) in ISM band applications.
Features
} E xcellent linearity } E xcellent matching } Very low series resistance } High capacitance ratio
18
1.11 Tire pressure monitoring system

Application diagram
antenna filter PA driver VCO
SENSOR
brb216
Function PA Product RF bipolar transistor Wideband transistor Package SOT23 SOT323 SOT323 Package SOT323 SOT23 SOT363 SOT363 SOT363 Package SOD523 SOD323 Type BFR92A BFR92AW BFR93AW Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB198 BB156
Function
Driver
Wideband transistor Amplifier Gen. pupose wideband ampl.
Function VCO
Product Varicap diodes VCO varicap diodes
Product highlight: BFR92AW silicon NPN transistor

It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. This silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.
Features
} High power gain } Gold metallization ensures excellent reliability } SOT323 (S-mini) package
19
1.12 Digital Audio Broadcasting (DAB)

Application diagram
antenna filter LNA mixer filter CHIPSET
oscillator
bra913
Function Frequency Product RF bipolar transistor RF transistor Wideband transistor JFET Package SOT23 SOT323 SOT23 SOT143 SOT143R SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT343F SOT343 SOT343 SOT343R SOT343R SOT363 SOT363 SOT363 SOT363 Type BFG410W BFG425W BFG480W BGA2022 Type BB149 Type BFS17 BFS17W BF862 BF904 BF904R BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 BFU725F BFG425W BFG410W BGA2001 BGA2003 BGM1013 BGM1011 BGA2715 BGA2748
VHF band Mosfet
5V
LNA RF transistor RF bipolar transistor S-band/ L-band MMIC
9V SiGe:C transistor Wideband transistor Low noise wideband amplifier General purpose wideband amplifier Package SOT343 SOT343 SOT343 SOT363 Package VCO varicap diodes SOD323
Function Mixer
Function VCO
Suitable frequencies for DAB identified on VHF band, L-band and S-band: VHF band I: 47 - 68 MHz VHF band III: 174 - 240 MHz L-band: 1452 - 1467.5 MHz S-band: 2310 - 2360 MHz

NXP NPN double polysilicon wideband transistor with buried layer is for low voltage and low noise applications in a plastic, 4-pin dualemitter SOT343R package.
Features
} Very high power gain (18 dB at 2 GHz) } Low noise figure (1.2 dB at 2 GHz) } High transition frequency (22 GHz) } Emitter is thermal lead } Low feedback capacitance (45 fF)
1.13 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram
horizontal 1st antenna stage LNA
2nd stage LNA
3rd stage LNA
mixer
H low IF amplifier
low mixer BIAS IC
oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH IF amplifier
IF out 1
vertical antenna
high
oscillator V high IF amplifier
IF out 2
1st stage LNA
2nd stage LNA
3rd stage LNA
mixer
IF amplifier
brb022
Function Oscillator Product RF bipolar transistor RF transistor Function Product General purpose amplifier 1st stage IF amplifier MMIC IF gain block Wideband transistor SiGe:C transistor Package SOT343 SOT343F SOT343F Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F Package various various various various various Type BFG424W BFG424F BFU725F Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG424W BFG424F Type BAP64* BAP51* BAP1321* BAP50* BAP63* Function Product General purpose amplifier Output stage IF amplifier MMIC IF gain block Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 Package SiGe:C transistor SOT343F Package SiGe:C transistor SOT343F Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG325 Type BFU725F Type BFU725F
RF bipolar transistor Function 3 rd stage LNA Function Mixer Product RF transistor Product RF transistor
Wideband transistor
RF bipolar transistor Function Product
Wideband transistor
IF switch
RF diode
PIN diode
Product highlight: BGA28xx-family, IF gain blocks

The BGA28xx IF gain blocks are Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuit in a 6-pin SOT363 plastic SMD package.
Features
} Internally matched to 50 } Reverse isolation > 30 dB up to 2 GHz } Good linearity with low second order and third order products } Unconditionally stable (K > 1)
21
1.14 Satellite Multi Switch Box - 4 x 4 (up to 16 x 16)

Application diagram
input terrestrial amplifier input terrestrial input amplifiers LNB satellite dishe(s)
output amplifiers coax out to STB SWITCH MATRIX FOR 4 4, NEEDS 16 (SINGLE) PIN DIODES coax out to STB coax out to STB coax out to STB
brb023
Function Input amplifier terrestrial Product General purpose medium power amplifier Package Type BGA6289 SOT89 BGA6489 BGA6589 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 Package Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 Type BAP50* BAP51* BAP63* BAP64* BAP70* BAP1321* Output amplifier MMIC Function Product General purpose medium power amplifier General purpose amplifier Wideband transistor Package Type BGA6289 SOT89 BGA6489 BGA6589 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 BGM1011 BGM1013 BGM1014 BFG135 BFG 591 BFG198 BFG540
MMIC
Function
Product MMIC General purpose amplifier Wideband transistor
Input amplifier LNB
Function
Product
Switch matrix
RF diode
PIN diode
Various
Product highlight: PIN diodes for switching matrix

Together with outstanding RF performance, this component simplify design-in because of its extremely low forward resistance, diode capacitance and series inductance. Significant board space saving by supplying a range of high compact package options including SOD523, SOD323 and leadless SOD882T.
Features
} High isolation, low distortion, low insertion loss } Low forward resistance (Rd) and diode capacitance (Cd) } Ultra-small package options
22
1.15 TV / VCR / DVD / HDD tuning

Application diagram
antenna
input filter
RF preamplifier
bandpass filters
mixer
IF amplifier IF out
oscillator
bra500
Function Product VHF low Package SOD323 SOD523 SOD882T SOD323 SOD523 SOD523 SOD882T SOD882T SOD323 SOD882T SOD523 SOD523 Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT666 Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189 Type BF904 BF909 BF1201 BF1202 BF1105 BF1211 BF1212 BF1100 BF1109 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1206F Function Product VHF low Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package SOD323 SOD882T SOD523 SOD323 SOD882T SOD523 SOD882T SOD523 SOD323 SOD882T SOD523 SOD523 Package Wideband amplifier SOT363 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189 Type BGA2717
Input filter
Varicap diode
VHF high
Bandpass filter
Varicap diode
VHF high
UHF
UHF
Function
Product
Function
Product VHF low
5V
Oscillator
Varicap diode
VHF high
9V RF pre-amplifier MOSFET
UHF
Function IF amplifier
Product MMIC
2-in-1 @ 5 V
2-in-1 @ 3 V
Product highlight: BF1206F dual gate mosfet double amplifier specified for low power applications.
The device consists of two dual gate mosfet amplifiers in a small SOT666 flatlead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3 Volts and draincurrents of 4 mA.
Features
} Low power specified } Two amplifiers in one small SOT666 package } Shared gate 2 and Source leads } Each amplifier is biased by an external bias resistor } E xcellent noise and crossmodulation performance
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1.16 Antenna loop through

Application diagram
RF in
filter
LNA
DVD-R, HDD-R, VCR, DVR
RF switch
BF1108
TV RF out to TV
LNA
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Function RF switch Product MOSFET Silicon RF switch Package SOT23 SOT143B SOT143R Function LNA Product RF bipolar transistor Wideband transistor Package SOT143 SOT143 SOT89 Type BF1107 BF1108 BF1108R Type BFG520 BFG540 BFQ540
Using the BF1108 as a RF switch saves considerable use of energy. The recording device (DVD-R, HDD-R, VCR, DVR) can be powered off but people can remain watching TV, although the antenna is looped via the recording device. Without using a BF1108 the antenna signal is lost. How does it work ? At the moment the power of the recording device is on, the BF1108 is open, so the RF signal travels via the recording device to the TV tuner. At the moment the power of the recording device is completely off, the BF1108 closes. This ensures that the RF signal is looped through directly to the TV tuner. TV reception is guaranteed.
Product highlight: BF1108 silicon RF switch, Mosfet

This switch is a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B package. The low loss and high isolation capabilities of this device provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.
Features
} Specially designed for low loss RF switching up to 1 GHz } Easy to design-in } Power ON: low losses } Power OFF: high isolation } ON or OFF, ZERO power consumption
24
1.17 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)

Application diagram
FM input filter & AGC
1st mixer
IF bandpass filter
2nd mixer
variable BW filter
IF limiter FM deamplifier modulator f V FM MPX
AGC & hum filter AM LNA
oscillator
oscillator
DET RF input filter 1st mixer IF bandpass filter 2nd mixer IF bandpass filter IF AM deamplifier modulator
AM audio
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Function AM LNA Function FM input filter & AGC
* = OIRT
Product RF transistor Product RF diode
JFET
Package SOT23 Package SOT23 SOT23 SOD523 SOD323
Type BF862 Type BB201* BB207 BAP70-02 BAP70-03
Function AGC & hum filter Function Oscillator
Product RF diode Product RF diode Varicap diode PIN diode
Package SOT363 Package SOD323 SOD523
Type BAP70AM Type BB156 BB208-02
Varicap diode PIN diode
Note 1: All these recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All these recommended discrete products are applicable excluding AM LNA in: DICE2:TEF6730HWCE.
Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator.
Product highlight: BF862 Junction Field Effect Transistor

Our Tuning component portfolio contains excellent products for car radio reception applications, playing a vital role for in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design in. Performance is demonstrated in reference designs. High performance Junction Fet BF862, specially designed for car radio AM amplifiers.
Features
} High transition frequency and optimized input capacitance for excellent sensitivity } High transfer admittance resulting in high gain } Encapsulated in the versatile and easy to use SOT23 package
25
1.18 CATV electrical (line extenders)

Application diagram
duplex filter coax in
RF preamplifier
RF power amplifier
duplex filter coax out
RF reverse amplifier
bra505
Function Product Frequency 550 MHz 600 MHz 750 MHz RF pre-amplifier Push-Pulls 870 MHz Gain (dB) 33.5 - 35.5 33.5 - 35.5 26.2 - 27.8 21 - 22 33.5 - 35.2 33.5 - 34.5 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 22 24 28 Type BGY588N BGY588C BGY587B BGY687 BGE788C BGE788 BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041 CGY1043 CGY1047 Function Product Frequency 550 MHz 750 MHz Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 - 19 18.2 - 18.8 19.7 - 20.3 20.5 - 22.5 23 - 25 21 23 23 25 25 Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD942C CGD944C CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi
RF power amplifier
Power doublers
870 MHz
1000 MHz
1000 MHz
Function RF reverse amplifier
Product Reverse hybrids
Frequency 5-75 MHz 5-120 MHz 5-200 MHz
Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5
Type BGY68 BGY66B BGY67A
All available in SOT115 package.
Product highlight: CGD1044Hi

CGD1044Hi with high-output power is primarily designed for use in fiber deep-optical-node applications (N+0/1/2). This 1 GHz solution offers an extended temperature range, high power overstress capabilities and high ESD levels resulting in a low cost of ownership. Its designed for durability and offering superior ruggedness.
Features
} High-output power } E xcellent linearity, stability, and reliability } High power gain } E xtremely low noise } Silicon Nitride passivity } GaAs HFET dies for high-end applications
1.19 CATV optical (optical node with multiple out-ports)

Application diagram
RF power amplifier
duplex filter coax out port 1
fiber in
RF forward receiver
RF preamplifier
splitter
coax out port 2
coax out port 3
coax out port 4

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Function RF forward receiver Function RF pre-amplifier Function RF power amplifier Product Forward path receiver Product Push-Pulls Power doubler Product Power doublers Frequency 870 MHz Package SOT115 SOT115 SOT115 Gain (dB) 18 - 19 21 - 22 18.2 - 18.8 Gain (dB) 20.5 - 22.5 23 - 25 Type BGO807 BGO807C BGO827 Type BGY885A BGY887 BGD812 Type CGD942C CGD944C
Frequency 870 MHz 870 MHz Frequency 870 MHz
Product highlight: BGO807C

BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit.
Features
} E xcellent linearity } Low noise } E xcellent flatness } Standard CATV outline } Rugged construction } Gold metallization ensures excellent reliability } High optical input power range
27
1.20 Base stations (all cellular standards and frequencies & WiMAX infrastructure)
Application diagram
RF ASIC
LPF I-DAC IQ-mixer
mixer
PA
VGA TX BPF MPA HPA isolator antenna TX/RX PLL VCO LPF 0
PLL
90
Q-DAC DIGITAL BASEBAND & CONTROL VGA
mixer
BPF ADC
IF-mixer
mixer
PLL VCO
duplexer
LPF SER1 I-ADC
VGA
IQ-mixer
mixer
TMA
RX BPF LNA PLL VCO LPF VGA
mixer
PLL
90
SER2
Q-ADC
RF ASIC
brb349
Function Sub function driver MMIC driver final final MMIC driver HPA (high power amplifier) integrated Doherty driver final driver final driver final 2500 - 2700 3400 - 3600 Type 10 - 2200 800 - 1000 800 - 1000 688 - 1000 1800 - 2000 2100 - 2200 2010 - 2025 2110 - 2170 2000 - 2200 frange MHz BLF6G21-10G BLM6G10-30 BLF6G10-160RN BLF6G10-200RN BLF6G20-230PRN BLM6G22-30 BLD6G21L-50 BLD6G22L-50 BLF7G22L-130 BLF6G22-180PN BLF6G22-180RN BLF6G27-10 BLF6G27-135 BLF7G27L-200P BLF6G38-10 BLF6G38-100 PL(AV) W 0.6 2 32 40 50 2 8 8 30 50 40 2 20 20 2 18.5
D
% 15 10 27 28.5 29.5 9 39 39 29.5 27.5 25 20 22.5 25 20 21.5
Gp dB 18.5 30 22.5 20 16.5 30 12.6 12.6 17 17.5 16 19 16 16.5 14 13
Mode of operation WCDMA, TD-SCDMA, GSM, EDGE WCDMA WCDMA WCDMA WCDMA WCDMA TD-SCDMA WCDMA WCDMA WCDMA WCDMA WiMAX WiMAX WiMAX WiMAX WiMAX
Product highlight: high power amplifier BLF7G22L-130

NXP's LDMOS Gen6 and Gen7 enable the world's most efficient base station designs by combining very high intrinsic (Si technology) and extrinsic (amplifier design) efficiencies. Gen7 is specifically designed for Doherty amplifiers.
Features
} unrivalled ruggedness } very consistent device performance } highest Doherty amplifier efficiencies to date } the world's first fully integrated Doherty amplifier: BLD6G21LS-50
28
Function LNA VGA's (variable gain amplifier) RF ASIC's
Sub function receive receive & transmit transceivers
Status in development
frange Function Sub function MHz 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 Type BGA7124 BGA7127 BGA7024 BGA7027 BGA7130 BGA7133 Max. sampling frequency 650 Msps dual channel DAC 160 Msps 125 Msps 650 Msps Dataconverters single channel ADC 80 Msps 125 Msps 125 Msps dual channel ADC 125 Msps 125 Msps Typ (V) 5 5 5 5 5 5
Vcc Max (V) 5.2 5.2 5.2 5.2 5.2 5.2
ICq Max (mA) 170 260 135 260 500 960
Icc Max (mA) 190 280 155 280 520 980
PL(1dB) (dBm) 25 27 25 27 30 33
OIP3 Typ / f = 900 MHz (dBm) 38 40 38 40 43 46
NF
dB 4.5 4.5 4.5 4.5 4.5 4.5
MPA (medium power amplifier)
transmit
Function
Sub function
Type DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D650 ADC1207S080 ADC1415S125 ADC1410S125 ADC1412D125 ADC1413D125
# of bits 14 14 14 14 12 14 14 14 14
Interface LVCMOS LVCMOS LVCMOS JESD204A LVCMOS LVCMOS&LVDS DDR LVCMOS&LVDS DDR LVCMOS&LVDS DDR JES204A
Product highlight: medium power amplifier BGA7124 MMIC

The BGA7124 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 25 dBm output power at 1 dB gain compression and a superior performance for various narrowband-tuned application circuits for frequencies up to 2700 MHz.
Features
} 400 MHz to 2700 MHz frequency operating range } 16 dB small signal gain at 2 GHz } 27 dBm output power at 1 dB gain compression } Integrated active biasing } 3.3 V / 5 V single supply operation } Simple quiescent current adjustment } 1 A shutdown mode
29
1.21 Broadcast / ISM (industrial, scientific & medical)

Application diagram
typ. 0.5 kW DVB-T Driver stages
8 final
TV exciter DVB-T
harmonic filter
typ. 5 kW DVB-T output power power monitor
amplifiers
brb339
Function driver driver driver final final final final final final Type BLF871(S) BLF881 BLF571 BLF573S BLF574 BLF578 BLF645 BLF878 BLF888 frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 0 - 1300 470 - 860 470 - 860 470 - 860 470 - 860 PL(AV) W 100 24 120 30 20 300 400 1200 1000 100 100 75 300 250 110 Gp dB 21 22 21 21 27.5 27.2 26.5 24 24 18 17 21 21 20 20 Mode of operation 2-TONE; CW DVB-T 2-TONE DVB-T 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE; PULSED RF 1-TONE; CW 2-TONE CW 2-TONE; CW DVB-T 2-TONE; CW DVB-T
Product highlight:
NXPs 50 V high voltage LDMOS process enables highest power, unequalled ruggedness. BLF578: 1000 W CW operation - highest power LDMOS transistor BLF888: optimized for digital broadcasting;
Features
} Best broadband efficiency } Highest power devices } Unrivalled ruggedness } Low-thermal resistance design for very reliable operation } Very consistent device performance
1.22 Microwave products for Avionics, L- and S-band Radar applications

Application diagram
final stage to regulator system COMBINER isolator RF output 1 kW power monitor
first stage RF input 200 mW BLS6G2731-6G
intermediate stage SPLITTER BLS6G2731(S)-120
10 BLS6G2731(S)-120
brb310
Application Function driver S-band Name BLL6H0514-25 BLS6G2731-120 BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135S-120 BLL6H0514-25 BLL6H1214-500 BLL6H0514-25 BLA6H0912-500 BLA6H1011-600 PackageId SOT467C SOT502A SOT502B SOT922-1 SOT502A SOT502B SOT467C SOT539A SOT467C SOT643A SOT539A frange MHz 500 - 1400 2700 - 3100 2700 - 3100 2900 - 3300 3100 - 3500 3100 - 3500 500 - 1400 1200 - 1400 500 - 1400 960 - 1215 1030 - 1090 PL(AV) W 25 (min) 120 120 130 120 120 25 (min) 600 25 (min) 500 600 Gp dB 20 13,5 13,5 12,5 11 11 20 17 20 17 19
final
L-band avionics
driver final driver final
Product highlight:
NXP's 6th generation LDMOS process technology enables power density of Bipolar with the benefits of LDMOS. Highest power LDMOS radar transistors: BLL6H1214-500 and BLA6H1011-600
Features
} higher gain } better pulse droop and insertion phase } overdrive to +5 dB without problems
31
32
Experience increasing your network capacity for high-end services

Look at 1-GHz CATV, chapter 2.8
2. Focus applications & products

NXP RF applications: http://www.nxp.com/rf
2.1 Get the fastest TTFF* with GPS LNA that use proven QUBiC4X SiGe:C NXP GPS LNA BGU7005
Manufactured in NXPs breakthrough QUBiC4X SiGe:C process technology and available in the industrys smallest package, this highly integrated GPS LNA reduces cost while delivering better sensitivity, greater immunity against jamming signals, and higher linearity.
This LNA designed for GPS receiver applications, is produced in NXPs industry-leading QUBiC4X process, a 0.25-m SiGe:C technology. It has very low noise gures and superior linearity performance, so it helps to improve overall sensitivity, which in turn leads to faster Time-To-First-Fix (TTFF) and better tracking. The proven QUBiC4Xi process improves overall RF performance and means the LNAs are less expensive and offer higher, more exible performance than their GaAs counterparts. Features Requires only 4 external components (including decoupling) to build complete GPS front-end. Small, 6-pin SOT886 leadless package (1.45 x 1.0 x 0.5 mm) Requires only one external matching component Low current consumption (5 mA) Low noise gure (NF): 0.9 dB at 1.575 GHz High insertion power gain: 16 dB at 1.575 GHz Low current consumption in power-down mode (<1 A) ESD protection on all pins Supply voltage: 1.5 to 2.85 V, optimized for 1.8 V Proven, robust QUBiC4X SiGe:C process technology (fT = 110 GHz)
*TTFF = Time-To-First-Fix
It restores sensitivity, provide greater immunity against outof-band cellular signals, reduce ltering requirements, and lower overall cost. It can be placed close to the GPS antenna, minimizing the noise gure. Additional gain amplies the GPS signal and raises the on-board signal-to-jammer ratio. The GPS receiver can be put close to the primary phone antenna, for the best GSM/UMTS performance, while the GPS antenna can be placed far away. This improves antenna-to-antenna isolation and results in higher performance. The BGU7005 has an enable function. In power-down mode, it consumes less than 1 A.
@ 1.575 GHz supply voltage Vcc V supply current Icc mA insertion power gain |s 21|2 dB noise gure NF dB Vcc = 1.8 V, Min -14 input power at 1 dB gain compression PI(1dB) dBm Vcc = 1.8 V, Typ -10 Vcc = 2.85 V, Min -11 Vcc = 2.85 V, Typ -8 Vcc = 1.8 V, Min 5 input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz IP3i dBm Vcc = 1.8 V, Typ 10 Vcc = 2.85 V, Min 5 Vcc = 2.85 V, Typ 12
Type
Package
Min BGU7005 SOT886 1.5
Max 2.85
Typ 5
Typ 16
Typ 0.9
34
2.2 A perfect match up to 20 GHz SiGe:C microwave NPN transistor BFU725F

Meet the trend towards higher frequencies. With NXP Semiconductors latest SiGe:C microwave NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise. All this in an easy-to-use SOT343F package. Its the ideal solution for applications up to 20 GHz.
The NPN microwave transistor BFU725F delivers an unbeatable blend of high switching frequency, high gain and very low noise. Thanks to its ultra-low noise figure, its perfect for your sensitive RF receivers particularly those for high-performance cell phones. Alternatively, with its high cut-off frequency, its your ideal solution for microwave applications in the 10 GHz to 30 GHz range, such as satellite TV receivers and automotive collision avoidance radar. The BFU725F get its outstanding performance from our innovative silicon-germanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. In addition, with the BFU725F, you dont need a biasing IC or negative biasing voltage. So its a much more cost-effective solution than GaAs pHEMT devices.
Features } Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz) } High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB at 18 GHz) } High switching frequency (fT >100 GHz / fMAX >150 GHz) } Plastic surface-mount SOT343F package Benefits } SiGe:C process delivers high switching frequency from a silicon-based device } Cost-effective alternative to GaAs devices } RoHS compliant Applications } GPS systems } DECT phones } Low noise amplifier (LNA) for microwave communications systems } 2nd stage LNA and mixer in direct broadcast satellite (DBS) low-noise blocks (LNBs) } Satellite radio } WLAN and CDMA applications } Low-noise microwave applications Quick reference data
Parameter
Collector-emitter breakdown voltage Maximum collector current Transition frequency Noise figure
Symbol
BVCEO I C(max) fT NF
Conditions
I C = 1 mA; I B = 0 VCE = 2 V; I C = 25 mA; f = 2 GHz VCE = 2 V; I C = 5 mA; f = 1.8 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 2.4 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 5.8 GHz; s = opt VCE = 2 V; I C = 5 mA; f = 12 GHz; s = opt VCE = 2 V; I C = 25 mA; f = 1.8 GHz VCE = 2 V; I C = 25 mA; f = 2.4 GHz VCE = 2 V; I C = 25 mA; f = 5.8 GHz VCE = 2 V; I C = 25 mA; f = 12 GHz
Value
3.2 40 68 0.4 0.45 0.7 1.0 26.6 25.5 17 13 V mA GHz dB dB dB dB dB dB dB dB
Maximum stable power gain
MSG / G P(max)
Calculated from noise figure using a lowpass bandwidth filter at 0.7 x bit rate and a source with an extinction ratio of 10% and a photodiode responsivity of 0.9A/W. NXP Semiconductors RF Manual 12th edition 35
2.3 NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies
Manufactured in NXPs latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.
The BGU7003 is designed for high-speed, low-noise mobile applications. In GPS units, for example, it delivers high-quality reception with maximum battery life. That means consumers always know where they are, and can receive continuous directions, between high rises and under heavy overcast skies. It also means having a GPS device that can run for days, instead of hours. The BGU7003 gets its outstanding performance from NXPs innovative silicon-germanium-carbon (SiGe:C) BiCMOS process, called QUBiC4X. This groundbreaking process technology was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range. It combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. The BGU7003 includes an integrated bias generator that simplifies the application and makes design-in easier. Biasing is done away from the RF input line, and the device offers the same full flexibility as the working range of the NXP BFU725F. The bias adapts over temperature to ensure the gain is well controlled. There is no matching on the die, and no limit to the application area. As the latest member of NXPs growing SiGe:C portfolio, the BGU7003 joins the highly successful BFU725F device. It is available in a demo board that lets the designer evaluate noise figures, gain, input and output reflection coefficients, and reverse isolation.
Features Low-noise, high-gain microwave MMIC Minimum noise figure is 0.8 dB at 1.575 GHz Maximum stable gain = 20 dB at 1.575 GHz 110-GHz fT-Silicon Germanium Carbon technology Optimized performance at low (5-mA) supply current ESD protection on all pins Extemely thin, leadless 6-pin SOT891 package Benefits Integrated biasing and shutdown for easy integration Power-down mode consumes less than 1 A Temperature-stabilized bias Applications GPS E-metering WLAN and CDMA wireless communication Satellite radio Analog/digital cordless applications (DECT) Microwave communications systems
Symbol VCC ICC Gp(max) NF PL(1dB) IP3O
Parameter supply voltage supply current maximum power gain noise figure output power at 1 dB gain compression output third-orderintercept point
Conditions RF input AC coupled 3.3 VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz; Tamb=25 C VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz; S= opt VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25 C VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25 C
(1)
Typ 2.5 5 19 0.8 8 18
Unit V mA dB dB dBm dBm
36
2.4 Ultra-low-noise LO generators for microwave radios NXP LO generators TFF11xxxHN

Manufactured in NXPs breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low power consumption and low-spurious solutions that simplify design-in and lower the total cost of ownership.
These ultra-low-noise local-oscillator (LO) generators, optimized for use in many different microwave applications between 7 and 15 GHz, deliver highly accurate performance in a small footprint. They require no alignment or frequency modication on the production line, so they simplify manufacturing. High integration saves board space and makes design-in easier, for lower overall cost and faster development, enabling quick time-to-market. Since these ICs are manufactured in NXPs industry-leading QUBiC4X SiGe:C process, they offer better overall RF performance, are more robust than their GaAs equivalents, and consume much less power. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. The TFF1003HN (see chapter 2.6) is the basis for the entire family of LO generators. It has VCO coverage of 12.8 to 13.05 GHz and accepts input signals from 50 to 816 MHz. The divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a stability of 2 dB. The family of LO generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 GHz. The RF performance of all these devices is consistent with the TFF1003HN. All the LO generators have very low power dissipation (not exceeding 400 mW), and all are available in a space-saving 24-pin HVQFN package.
Features TFF11xxxHN family: Lowest noise LO generators for a full family in range 7 to 15 GHz Maximum power consumption for all types does not exceed 400 mW Phase-noise compliant with IESS-308 (Intelsat) Proven QUBiC4X SiGe:C technology (120-GHz fT process) External loop lter Differential input and output Lock-detect output Internally stabilized voltage reference for loop lter 24-pin HVQFN (SOT616-1) package Applications: TFF11xxxxHN family Industrial/Medical Test and Measurement Equipment Electronic Warfare (EW) Electronic Countermeasures (ECM) Point to Point Point to Multi-Point Satellite Communication
Full portfolio overview of low noise LO generators for general microwave applications at chapter 3.4.2
37
2.5 Complete satellite portfolio for all LNB architectures NXP satellite LNB devices BFU725F and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are manufactured in NXPs groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are the latest additions to NXPs leading portfolio for satellite LNB.
BFU725F RF transistor The BFU725F is an RF transistor that can be used in the LNA part and as a mixer for a DBS LNB. In either application, it delivers low power consumption, good noise and linearity, and the lowest cost compared to GaAs pHEMT solution. BFU725F as mixer in Ku-band LNB Power consumption: 2 mA at 5 V Single supply: 3, 5, or 6 V Noise, Single Side Band: 7 dB (including BPF) Linearity: better than 0 dBm OIP3 Gain, SSB: 2 dB (including BPF) RF/LO/IF Match: better than 12/15/18 dB Broadband unconditionally stable LO-RF isolation better than 18 dB
BFU725F as LNA for C-band LNB Power consumption: 7 mA at 5 V Single supply: 5 or 6 V Noise: 0.65 dB Linearity: better than 10 dBm OIP3 Gain: 15 dB In/Out Match: better than 10 dB Broadband unconditionally stable
BGA28xx MMICs as IF ampliers (1st stage & output stage) For compatibility with existing designs, the series uses a market standard package, the SOT363 and the pin-compliant SOT363F package. The pinning is identical to NXPs current gain block family, and the blocks deliver similar noise gures. New features include atter gain, a gain slope of 0.5 dB, improved P1dB vs. Icc, and no necessity of an output inductor (also not at high P1dB models). Internally matched at 50 Flexible gain - At 250 MHz: 19 dB to 32 dB - At 2150 MHz: 20 dB to 33 dB Output power at 1dB gain compression: 0, 5, or 8 dB Single supply current - At 3.3 V: 12 to 20 mA - At 5 V: 6 to 27 mA Reverse isolation: >30 dB up to 2 GHz Best-in-class linearity vs current consumption Noise gure: 4 to 6 dB at 1 GHz Unconditionally stable (K > 1) High compression point models work without output inductor 6-pin SOT363 plastic SMD package
BFU725F as 2nd or 3rd stage LNA in Ku-band LNB Power consumption: 11 mA at 5 V Single supply: 3, 5, or 6 V Noise, SSB: typically 1.3 dB Linearity: better than 10 dBm OIP3 Gain, SSB: typically 10.5 dB In/Out match: better than 7/12 dB Broadband unconditionally stable
38
These products the BFU725F transistor for LNA and mixer applications, and the BGA28xx series of MMICs for IF ampliers are the most recent additions to NXPs leading portfolio for satellite LNB. They join the other discrete products, including oscillators, ampliers, switches, and biasing, to provide complete coverage for all LNB architectures.
Since the transistor and the MMICs are manufactured in NXPs industry-leading QUBiC4X SiGe:C and QuBiC4+ process, they offer better overall RF performance and are more robust than their GaAs equivalents for the lowest cost. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured.
Satellite outdoor unit, LNB for multiple users

horizontal 1st antenna stage LNA 2nd stage LNA 3rd stage LNA
mixer
H low IF amplifier
low mixer BIAS IC
oscillator V low mixer IF amplifier H high IF amplifier (4 x 2) IF SWITCH
IF amplifier
IF out 1
vertical antenna
high
oscillator V high
IF amplifier
IF out 2
1st stage LNA
2nd stage LNA
3rd stage LNA
mixer
IF amplifier
brb022
NOTE: Also look at chapter 1.13 satellite outdoor unit.
Quick reference satellite IF gain MMICs

@ Type Package Vs (V)
BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 3.3 3.3 3.3 3.3 5.0 5.0 5.0
Fu Is (mA)
9.7 12.4 16.4 19.6 7.7 22.7 15.4
@ 1 GHz NF (dB)
3.4 3.6 3.4 2.8 3.9 3.7 3.6
Gain (dB) @ OIP3 (dBm)

11.5 13.6 18.2 16.1 8.7 20.9 17.7
@-3dB (GHz)
>3 3.0 >3 2.3 >3 2.6 >3
Gain (dB)
20.2 22.1 25.4 31.2 23.3 31.9 23.4
250 (MHz)
20.0 22.3 26.2 32.0 22.9 31.2 23.0
950 (MHz)
20.2 22.1 25.4 31.2 23.2 31.8 23.3
1550 (MHz)
20.6 23.0 25.5 30.6 23.9 32.6 24.0
2150 (MHz)
20.6 23.8 25.8 28.7 24.0 31.4 24.3
39
2.6 VSAT, 2-way communication via satellite Design a Ku-band VSAT transmitter or transceiver that meets IESS-308 NXP Ku-band RF PLL ICs for VSAT
The TFF100xHN family are Ku-band RF PLLs intended for low phase-noise Local Oscillator (LO) circuits in Ku-band VSAT transmitters and transceivers. Manufactured in a high-performance SiGe:C process, it delivers extremely low phase noise and complies with the IESS-308 from Intelsat.
VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a Low Noise Block (LNB) for receiving the downlink signals, and a Block Up Converter (BUC). The VSAT ICs can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). Features Phase noise compliant with IESS-308 (Intelsat) Differential input and output Divider settings at 16, 32, 64, 128 or 256 Lock-detect output SiGe:C technology (120-GHz fT process) HVQFN24 (SOT616-1) package Applications VSAT up-converters Local oscillator signal generation To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequency locked to the reference. The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P) and OUT-N) have been reserved to match a typical layout using a linewidth of Z = 50 microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC.
40
Satellite
VSATs
HUB
Typical VSAT network
synchronized QPSK data on L band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz) from indoor unit 10 MHz
mixer
band pass filter
solid state power amp
13.05 GHz settings (12.8 GHz settings) /64 (/48) 156.25 kHz (203.33 kHz) PFD
203.90625 (200) MHz LF PFD LF
12.8~13.05 on-chip VCO
amp
band pass filter /1305 (/960)
/64 TFF1003HN 203.90625 (200) MHz > 13.05 (12.8) GHz TFF1003 @ DIV = 64 PLL with on-chip VCO
clean up PLL build around VCXO narrow bandwidth
brb200
Complete LO generator for linear BUC with TFF1003HN
Type
Package
fIN(REF)
VCC Typ
ICC Max mA 130 130 130
PLL phase noise @ N=64 @ 100 kHz Max dBc/Hz -92 -92 -104
PLL fo(RF) (GHz) 12.8~13.05 9.375 14.75~15
Output buffer Po Typ dBm -5 -5 -3 RLout(RF) Max dB -10 -10 -10
Input Si Min dBm -10 -10 -10
MHz TFF1003HN TFF1006HN TFF1007HN SOT616 SOT616 SOT616 50~815 36~586 230.46~234.38
V 3,3 3,3 3,3
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2.7 NXP CATV C-family for the Chinese SARFT standard Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of Chinas Connecting every village program and powerful enough for upgrading major cities from analog to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover most HFC applications in the 550 - 870 MHz range.
Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures. The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C, and CGD944C are high-gain, highperformance 870 MHz power doublers. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing by design the best ESD protection levels with no needs for external TVS components normally used with GaAs pHEMT devices. All CATV C-type devices feature a see-through cap that makes it easy to distinguish them from counterfeit products.
Products BGY588C, BGE788C and CGY888C push-pull amplifiers BGD712C, CGD944C and CGD942C power doublers BGO807C optical receiver Features Excellent linearity, stability and reliability High power gain Extremely low noise Silicon Nitride passivity GaAs HFET dies for high end devices Benefits Compliant with Chinese SARFT HFC networks standard Transparent cap allows confirmation of product authenticity Rugged construction
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BGY588C, BGE788C and CGY888C The last stage of an HFC network structure is called a terminating amplifier or user amplifier as it is close to the subscribers. Each terminating amplifier requires a single module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 860 MHz systems. These modules are fitting perfectly in the Chinese Connecting to Every Village projects.
BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese Connecting to Every Village projects.
IN port
PAD
EQ
BGY588C BGE788C CGY888C
OUT port
bra820
IN port
PAD
EQ
BGY785A BGY787
BGD712C
OUT port
bra821
CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 860 MHz.
BGO807C BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital our BGO807C is the perfect fit.
CGD942C/CGD944C
PAD H L OUT port 1
CGD942C/CGD944C
PAD PAD EQ H L OUT port 2
BGD812
BGO807C
(N + 1)
RF switch
BGY885A BGD812 BGY887
CGD942C/CGD944C
PAD H L OUT port 3
BGO807C
BGY885A
BGD812
PAD H L OUT port 2
bra823
CGD942C/CGD944C BGO807C
PAD H L OUT port 4
bra822
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C-family application information

Application Optical node Optical receiver Distribution amplifier Line extender amplifier Terminating amplifier BGY588C BGE788C CGY888C BGD712C BGO807C CGD944C CGD942C
Push-pull amplifiers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ f max ) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGY588C 34,5 0.2 - 1.7 -57 -62 8 325 40 - 550 BGE788C 34,2 0.3 - 2.3 -49 -52 8 305 40 - 750 CGY888C 35,5 1.5 typ. -66 -64 3 typ. 280 40 - 870
Power doublers
Parameters Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ f max ) (dB) Total current comsumption (mA) Frequency range (MHz) typ. range max. max. max. typ. range BGD712C 18,5 0.5 - 1.5 -62 -63 7 395 40 - 750 CGD944C 25 1-2 -66 -67 5 450 40 - 870 CGD942C 23 1-2 -66 -67 5 450 40 - 870
Optical receiver
Parameters Responsivity (Rmin) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@ f max ) (dB) Total current comsumption (mA) Frequency range (MHz) Connector BGO807C min. range max. max. max. typ. range - / SCO / FCO 800 0-2 -71 -55 8,5 190 40 - 870
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2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C
Complete GaAs amplifier solutions for Chinese HFC networks

These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard, provide complete functionality in a format that reduces chip-count and lowers overall cost.
Products 870-MHz push-pull amplifier: CGY888C 870-MHz power doublers: CGD942C (23-dB gain), CGD944C (25-dB gain) Features GaAs HFET process for best performance and lowest chip-count Excellent linearity, stability, and reliability High power gain Extremely low noise Excellent return-loss properties Benefits Fully compliant with Chinese SARFT HFC networks standard Transparent cap confirms product authenticity Rugged construction Unconditionally stable Thermally optimized design Applications Hybrid Fiber Coax (HFC) applications Line extenders Trunk amplifiers Fiber deep-optical-node (N+0/1/2) To support Chinese HFC CATV infrastructure applications as a single-source supplier, NXP offers the C-family, a complete line of dedicated RF amplifier modules that deliver the very high level of performance required for next-generation HFC TV networks. The family includes the 870-MHz push-pull amplifier CGY888C, a GaAs upgrade of NXPs industry-leading BGY888 and BGY835C products, and two 870-MHz power doublers: the CGD942C, which has a typical gain of 23 dB, and the CGD944C, with a typical gain of 25 dB. The modules are flexible enough to connect rural communities as part of Chinas Connect Every Village project, and powerful enough to upgrade major cities from analog to high-end digital services.
The modules have been tested under Chinese raster conditions and fully comply with the Chinese SRAFT standard. They also cover most HFC applications in the range of 550 to 870 MHz and are compatible with previous generations of NXP HFC solutions, so they can be used to upgrade existing networks to a higher level of performance. Produced in NXPs advanced GaAs HFET die process, the modules deliver excellent linearity with extremely low noise, and work seamlessly together. The GaAs process improves performance and, by reducing chip count, saves overall cost. It offers stronger signal strength than Si, so there are fewer amplifiers required, and it provides superior ESD protection compared to GaAs pHEMT processes, so theres no need for external TVS components. The CGY888C is well suited for use in the last stage of an HFC network, which is known as a terminating amplifier or a user amplifier since it is close to subscribers. The CGD942C and the CGD944C offer higher output power and better CTB and CSO than other power doublers, so they are ideal for use in HFC networks that have optical nodes with multiple out-ports. The modules enable each port to cover at least 125 subscribers directly. All the C-family modules are delivered with transparent caps that make it easy to distinguish them from counterfeit products. Unmatched new ESD protection levels: All new standard NXP CATV SOT115 hybrids, power doublers or push pulls, released in 2009 and onwards will have a build-in extra protection on top of the existing one for very high level ESD surges. Those surge levels will leave our devices without any damage or destruction. Human body or biased ESD levels will increase respectively to 2000 V and 1500 V which is making now NXP CATV devices the most ESD robust product on the market today.
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2.8 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks NXP high-gain power doublers CGD104xH and push-pulls CGY104x
Designed for 1-GHz sustainable networks, these high-performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for high-end services like HDTV, VoIP, and digital simulcasting.
Key features } Excellent linearity, stability, and reliability } High power gain for power doublers } Extremely low noise } Dark Green products } GaAs HFET dies for high-end applications } Rugged construction } Superior levels of ESD protection } Integrated ringwave protection } Design optimized for digital channel loading } Temperature compensated gain response } Optimized heat management } Excellent temperature resistance Key benets } Simple upgrade to 1-GHz capable networks } Low total cost of ownership } High power-stress capability } Highly automated assembly Key applications } Hybrid Fiber Coax (HFC) applications } Line extenders } Trunk amplifiers } Fiber deep-optical-node (N+0/1/2) } Bridgers
New CATV GaAs platform lay-out
The NXP power doublers CGD104xH and CGD104xHi are ideal for use in line extenders and trunk ampliers. They support ber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. The GaAs HFET die process delivers high gain, excellent CTB and CSO ratings, along with lower current. The new NXP CGY1047 push-pull is the rst product on the market combining very low noise, best-in-class distortion parameters, and low carbon footprint capabilities. It delivers the best performance for the lowest power consumption, so it reduces OPEX and CO2 emissions All of NXPs 1-GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high power overstress capabilities, and extremely high ESD levels. As a result, they also reduce the cost of ownership. The GaAs die is inserted in a HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the modules high performance stable over a wide range of temperature. Assembly is fully automated and requires almost no human intervention, so repeatability remains very high.
46
Upcoming products Additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB.
NXP is also developing a new, highly integrated power doubler. The CGD1047Hi will deliver, in one IC, a 27-dB power gain with 60-dBmV output power and excellent ESD protection, for the ultimate in high-quality, distortionless devices.
Quick reference data CATV 1 GHz power doublers and push pulls
CATV 1-GHz power doublers Parameters
Power gain (dB) Slope cable equivalent (dB) Composite triple beat (dB) Composite 2nd order distortion (dB) Noise (@fmax) (dB) Total current consumption (mA) Frequency range (MHz) typ. typ. typ. typ. max. typ. range
CATV 1-GHz push-pulls CGD1044Hi

25 1.5 -69 -68 6 440 40 - 1000
CGD1040Hi
21 1.5 -69 -68 6 440 40 - 1000
CGD1042H
23 1.5 -69 -68 6 450 40 - 1000
CGD1042Hi
23 1.5 -69 -68 6 440 40 - 1000
CGD1044H
25 1 -69 -68 6 450 40 - 1000
CGY1041
22 1.5 -62 -62 4 220 40 - 1000
CGY1043
24 1.5 -64 -64 4 220 40 - 1000
CGY1047
28 1.5 -62 -64 4,5 250 40 - 1000
CGD1042Hi/CGD1044Hi
PAD H L OUT port 1
CGD1042Hi/CGD1044Hi
CGD1042Hi/CGD1044Hi
PAD H L OUT port 3
(N + 1)
RF switch
CGD1042Hi/CGD1044Hi
PAD H L OUT port 4
bra822
An optical node with multiple out-ports using the CGD1042Hi / CGD1044Hi
47
2.9 LDMOS technology optimized for high-power use and Doherty applications NXP Gen7 LDMOS technology
NXPs seventh-generation (Gen7) LDMOS delivers record performance up to 3.8 GHz and offers 25 percent lower output capacitance. It enables wideband output matching and makes it easier to design high-performance Doherty amplifiers.
Key features } Next-generation LDMOS Gen7 } Optimized for Doherty amplifiers } Relative to Gen 6 - 2% higher efficiency - 25% lower output capacitance - 20% higher power density - 25% lower Rth Key benets } High efficiency } High peak power } High gain } Good linearity Key applications } Macrocell basestations } UMTS band 1 } LTE/WiMAX OFDM } Final stage } Multi-carrier } DPD architecture } Feed-forward architecture } Remote radio heads
The seventh-generation of NXPs LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology enables solutions with the highest possible efficiency. Compared to the previous generation, Gen7 increases power density by 20 percent, improves power efficiency by two percent, and reduces thermal resistance (Rth) by more than 25 percent. The gate length is 0.3 m, and the technology is processed in an advanced 8-inch CMOS fab, for a further reduction down to 0.14 m. Doherty has emerged as the amplifier architecture of choice for new basestation transmitters, helping wireless network operators increase efficiency and reduce operating costs. Gen7 is optimized for Doherty applications and enables Doherty amplifiers with higher power, higher efficiency, less memory effects, and better pre-distortion capabilities.
2C-WCDMA Doherty PA with BLF7G22LS-130

VDS Frequency POUT-PEAK POUT-AVG Efciency IM3 Gain 28 V 2.14 GHz 55 dBm 47 dBm 44% -28 dBc 16 dB
Figure 1. The Gen7 Doherty reference design, with two BLF7G22LS-130 devices.
48
Figure 2. The memory effect of the Gen7 Doherty amplier is measured up to an IF bandwidth of 30 MHz. The gure shows that the magnitude level of the residual IM3 is very low, which enhances pre-distortion capabilities.
DPD corrected spectrum of Doherty amplifier

0
no_DPD with_DPD
-10
-20
DPD+MEM
-30 dBm -40 -50 -60 -70 2,100 2,110 2,120 2,130 2,140 2,150 Frequency (GHz) 2,160 2,170 2,180
Figure 3. Pre-distorted spectrum of the Gen7 Doherty amplier, with Po-avg = 47.0 dBm, PAE = 43.0%, and Gain = 15.7 dB with Vds = 28 V.
Gain & efficiency versus output power

19 18 17 Gain [dB] 16 15 14 13 12 11 38 40 42 44 46 48 Pout [dBm] 50 52 54 56
60
50
40
30
Gain PAE
20
10
Figure 4. CW power sweep at 2.14 GHz and Vds = 28 V. NXPs Gen7 technology improves the efciency and gain of the Doherty amplier, which makes the overall line-up more efcient.
power added efficiency [dB]
49
2.10 Boost efficiency and lower system cost in wireless infrastructure with GaN NXP GaN technology for RF power
This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables high-power amplifiers that deliver very high efficiency in next-generation wireless communication systems.
Features } Power density that is up to five times higher than Si LDMOS } 50 V operation } High gain } High efficiency } High reliability } Low parasitics Benets } High frequency combined with high power } Broadband operation that lets a single power amplifier function at multiple frequencies } Enabling technology for next-generation, high-power, Switch Mode Power Amplifier (SMPA) architectures } Lowers system costs and operational expenditures } Ideal for tower-top basestations Applications } Cellular basestations } WiMAX } Broadcast } Radar Collaborating with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics, NXP Semiconductors is developing a gallium-nitride (GaN) process technology that boosts performance of next-generation RF power amplifiers. The new GaN process, with its high frequency combined with high power, puts NXP in the ideal position of being able to support future applications while continuing to evolve its well-established LDMOS technology.
The GaN technology delivers numerous benefits to manufacturers of infrastructure equipment. Using the GaN technology in a transmitter represents a significant cost savings in system manufacturing, along with major improvements in system performance and flexibility. Most of todays basestation power ampliers are limited to specic applications. The new GaN-based technology lets operators use a universal transmitter to switch between systems and frequencies, so they can instantly meet demands in the basestations coverage area. GaN transistors enable much more efcient power ampliers and as a result drive down the operational costs of telecom operators. GaN transistors can operate at much higher junction temperatures than Si- and GaAs-based devices, so GaN is an ideal candidate for environments with reduced cooling capabilities, such as tower-top basestations. Also, with its high power densities, GaN has the potential to expand into other areas, including high-power broadcast applications, where solid-state power ampliers built with vacuum tubes are still the norm. NXPs rst GaN broadband power ampliers are expected to be available in 2009, with Switch Mode Power Ampliers (SMPAs) following quickly thereafter.
Performance (targets)
Saturated output power at 50 V Frequency Maximum PAE Linear power gain 2C-WCDMA linear efciency with DPD 100 W 2.2 GHz 68% 19 dB 40% at 52 dBc IM3 at 8 dB OPBO
50
Assembly of GaN power bar in standard ceramic package
51
52
Experience worlds best performing RF power transistors

Look at RF power transistors, chapter 3.7
3. Product portfolio
NXP RF product catalog: http://www.nxp.com/rf
3.1 New products

DEV = In development CQS = Customer qualification samples RFS = Release for supply
Status June 2009 Planned release
Type NEW: RF diodes BB189 Varicap for UHF TV tuning
Application / Description
Chapter
RFS
Released
3.2.1
NEW: SiGe:C transistors & MMICs BGU7003 BGU7005 SiGe:C MMIC for high frequency applications, with ESD protection on RF input SiGe:C MMIC, incl matching output for GPS LNA RFS DEV Released Q4 2009 3.4.1 3.4.1
NEW: Medium power amplifier MMICs BGA7124 BGA7127 BGA7024 BGA7027 BGA7130 BGA7133 Medium power amplifier for all 400 - 2700 MHz applications Medium power amplifier for all 400 - 2700 MHz applications Medium power amplifier for all 400 - 2700 MHz applications Medium power amplifier for all 400 - 2700 MHz applications Medium power amplifier for all 400 - 2700 MHz applications Medium power amplifier for all 400 - 2700 MHz applications CQS DEV DEV DEV DEV DEV Q4 2009 Q2 2010 Q1 2010 Q2 2010 Q4 2010 Q4 2010 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
NEW: Satellite IF gain blocks and LO generators BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 TFF1003HN TFF1006HN TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN Satellite IF gain block Satellite IF gain block Satellite IF gain block Satellite IF gain block Satellite IF gain block Satellite IF gain block Satellite IF gain block Low noise LO generator for VSAT applications Low noise LO generator for VSAT applications Low noise LO generator for VSAT applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications Low noise LO generator for general microwave applications DEV DEV DEV DEV DEV DEV DEV CQS CQS DEV CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS CQS Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q2 2010 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 Q4 2009 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2
54
Type NEW: RF CATV 1 GHz modules CGY1041 CGY1043 CGY1047 CGD1040Hi CGD1042Hi CGD1044Hi
Application / Description
Status June 2009
Planned release
Chapter
1 GHz, 21 dB gain Push Pull, GaAs HFET SOT115 1 GHz, 23 dB gain Push Pull, GaAs HFET SOT115 1 GHz, 27 dB gain Push Pull, GaAs HFET SOT115 1 GHz, Power Doubler, protected against ring tones 1 GHz, Power Doubler, protected against ring tones 1 GHz, Power Doubler, protected against ring tones
DEV DEV RFS RFS RFS RFS
Q3 2009 Q3 2009 Released Released Released Released
3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2
NEW: RF power transistors Base Station transistors BLF6G21-10G BLF6G22L(S)-180RN BLF6G20-230PRN BLF6G10L(S)-260PRN BLF7G22L(S)-130 BLD6G21L(S)-50 BLM6G10-30(G) BLM6G22-30(G) BLF7G21L(S)-10 BLF7G22L(S)-130 BLF7G21L(S)-10 BLF7G22L(S)-130 BLF6G27L(S)-75 BLF6G27L(S)-100 BLF7G27L(S)-230P Power LDMOS transistor for base station applications Power LDMOS transistor for base station applications Power LDMOS transistor for base station applications Power LDMOS transistor for base station applications RF power transistor for W-CDMA base station Fully integrated Doherty RF power amplifier for TDS-CDMA base station W-CDMA 800 MHz - 1000 MHz power MMIC W-CDMA 2000 MHz - 2200 MHz power MMIC Power Gen7 LDMOS transistor for base station applications Power Gen7 LDMOS transistor for base station applications Power Gen7 LDMOS transistor for base station applications Power Gen7 LDMOS transistor for base station applications WiMAX power LDMOS transistor WiMAX power LDMOS transistor WiMAX power LDMOS transistor DEV RFS DEV DEV CQS CQS DEV RFS DEV DEV DEV DEV DEV DEV DEV Q3 2009 Released Q3 2009 Q4 2009 Q3 2009 Q3 2009 Q3 2009 Released Q3 2009 Q2 2009 Q3 2009 Q2 2009 Q2 2009 Q3 2009 Q1 2010 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.1 3.7.1.1 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.4 3.7.1.4 3.7.1.4
Broadcast / ISM transistors BLF571 BLF574 BLF578 BLF871 BLF871S BLF881 BLF888 Microwave transistors BLL6H0514-25 BLA6G1011-200R BLA6H0912-500 BLA6H1011-600 BLL6H1214-500 BLS7G2933P-200 High Voltage RF power transistor driver for avionics up to L-band radar systems Gen 6 RF high power transistor for avionics applications High Voltage RF high power transistor for avionics applications High Voltage RF high power transistor for avionics applications High Voltage RF high power transistor for L-band radar systems Gen 6 RF high power transistor for S-band radar systems DEV DEV DEV DEV DEV DEV Q4 2009 Q1 2010 Q4 2009 Q4 2009 Q4 2009 Q4 2009 3.7.3 3.7.3.1 3.7.3.1 3.7.3.1 3.7.3.2 3.7.3.3 High Voltage RF power transistor driver for broadcast / ISM High Voltage RF power transistor for broadcast / ISM High Voltage RF power transistor for broadcast / ISM High Voltage RF power transistor driver for UHF broadcast - DVB-T High Voltage RF power transistor driver for UHF broadcast - DVB-T High Voltage RF power transistor driver for UHF broadcast - DVB-T High Voltage RF power transistor for UHF broadcast - DVB-T RFS RFS CQS DEV DEV DEV CQS Released Released Q2 2009 Q2 2009 Q3 2009 Q3 2009 Q3 2009 3.7.2.2 + 3 3.7.2.2 3.7.2.2 3.7.2 3.7.2 3.7.2 3.7.2.3
55
3.2 RF diodes
3.2.1 Varicap diodes
NEW: Varicap selection guide on www.nxp.com/varicaps Easy-to-use parametric filters help you to choose the right varicap for your design.
Why choose NXP semiconductors varicap diodes: } Reference designs for TV and radio tuning } Direct matching process } Small tolerances } Short leadtimes } Complete portfolio covering broad frequency range and variety in package (including leadless) } Reliable volume supply
VCO and FM radio tuning varicap diodes

@ f = 1 MHz Type Package Number of diodes 1 1 1 1 2 1 1 2 1 1 Configuration SG SG SG SG CC SG SG CC SG SG Cd min (pF) BB145B BB156 BB198 BB199 BB201 BB202** BB202LX** BB207* BB208-02* BB208-03* Bold * ** SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882T SOT23 SOD523 SOD323 6.4 14.4 25 36.5 89 28.2 28.2 76 19.9 19.9 Cd typ (pF) 16 95 81 Cd max (pF) 7.2 17.6 28.5 42.5 102 33.5 33.5 86 23.2 23.2 @ VR = (V) 1 1 1 0.5 1 0.2 0.2 1 1 1 Cd min (pF) 2.55 4.2 4.8 11.8 25.5 7.2 7.2 25.5 4.5 4.5 Cd typ (pF) 4.8 27.6 27.6 Cd max (pF) 2.95 5.4 6.8 13.8 29.7 11.2 11.2 29.7 5.4 5.4 @ VR = (V) 4 7.5 4 2 7.5 2.3 2.3 7.5 7.5 7.5 Cd1/ Cd2 min 2.2 2.7 2.8 3.1 2.5 2.5 2.6 3.7 3.7 Cd1/ Cd2 max 3.9 3.8 3.3 5.2 5.2 @ V1 = (V) 1 1 0.5 1 0.2 0.2 1 1 1 @ V2 = (V) 4 7.5 2 7.5 2.3 2.3 7.5 7.5 7.5 rs typ () 0.4 0.25 0.25 0.35 0.35 0.2 0.35 0.35 rs max () 0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5 @f= (MHz) 470 470 100 100 100 100 100 100 100 100
= Highly recommended product Type of connection: = Including special design for FM car radio (CREST-IC:TEF6860). SG: Single = Including special design for mobile phone tuner ICs. CC: Common Cathode
56
TV / VCR / DVD / HDD varicap diodes - UHF tuning

@ f = 1 MHz Type Package Cd min (pF) Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135 SOD323 SOD323 SOD523 SOD523 SOD882T SOD882T SOD523 SOD523 SOD323 1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.89 1.7 Cd typ (pF) 2.1 2.1 2.1 2.1 2.1 2 2.04 Cd max (pF) 2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18 2.1 @ VR = (V) 28 28 28 28 28 28 10 25 28 Cd1/Cd2 min Cd1/Cd2 typ Cd1/Cd2 max @ V1 = (V) 1 1 1 1 1 1 1 2 0.5 @ V2 = (V) 28 28 28 28 28 28 10 25 28 rs typ () 0.6 0.6 0.6 0.65 0.65 0.65 0.65 rs max () 0.75 0.75 0.75 0.75 0.7 0.75 @f= (MHz) 470 470 470 470 470 470 470 470 470 @ Cd = (pF) 9 9 9 9 9 30 9 9 9 2 2 2 2 2 2 2 1.8 Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 @ V2 = (V) 28 28 28 28 28 28 10 25 10 10 10 10 10 5 5 10 @ Ns =
8.2 8.45 8.45 8.45 8.45 6 6.3 8.9
9 9 9 9 9 9 7 7.3 -
10 10.9 10.9 10 10.9 12
Bold = Highly recommended product Bold Red = New, highly recommended product
TV / VCR / DVD / HDD varicap diodes - VHF tuning

@ f = 1 MHz Type Package Cd min (pF) Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40 Bold SOD323 SOD323 SOD323 SOD523 SOD882T SOD523 SOD882T SOD523 SOD882T SOD323 SOD523 SOD882T SOT23 2.4 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57 0.7 0.7 0.7 4.3 Cd typ (pF) 2.6 2.7 2.6 2.6 2.6 2.7 2.7 2.75 2.75 Cd max (pF) 2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92 1.055 1.055 1.055 6 @ VR = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 Cd1/ Cd2 min 14.5 20.6 13.5 13.5 13.5 20.6 11 11 12 12 5 Cd1/ Cd2 typ 15 22 15 15 15 22 22 14 Cd1/ Cd2 max 16 16 6.5 @ V1 = (V) 1 1 1 1 1 1 1 2 2 0.5 0.5 0.5 3 @ V2 = (V) 28 28 28 28 28 28 28 25 25 28 28 28 25 rs typ () 1 0.65 0.65 0.7 1 1 2 rs max () 0.9 1.2 0.8 0.8 1.2 0.75 0.75 3 3 0.7 @f= (MHz) 100 100 100 100 470 100 100 470 470 470 470 470 200 @ Cd = (pF) 12 30 30 30 30 30 30 9 9 9 25 2 2 2 2 2 2 2 2 2 Cd/ Cd @ V1 = (V) 0.5 1 1 1 1 1 1 2 2 @ V2 = (V) 28 28 28 28 28 28 28 25 25 10 10 10 10 5 10 10 10 10 @ Ns =
= Highly recommended product
57
3.2.2 PIN diodes
NEW: Pin diode selection guide on www.nxp.com/pindiodes Easy-to-use parametric filters help you to choose the right pin diode for your design.
Why choose NXP Semiconductors PIN diodes: } Broad portfolio } Unrivalled performance } Short leadtimes } Low series inductance } Low insertion loss } Low capacitance
PIN diodes: typical rD @ 1 mA 2

Type BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W Package SOD882T SOD523 SOD323 SOT23 SOT323 SOD882T SOD523 SOD323 SOT323 Number of diodes 1 1 1 2 2 1 1 1 2 Conf SG SG SG CC CC SG SG SG CC VR max (V) 30 30 30 30 30 50 50 50 50 IF max (mA) 100 100 100 100 100 100 100 100 100 rD typ () 2.3 2.5 2.5 2.5 rD max () 3.3 3.5 3.5 3.5 rD typ () 0.94 1 1 1 1 1.87 1.95 1.95 1.95 rD max () 3 3 3 3 rD typ () 0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17 rD max () 0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8 Cd typ (pF) 0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4 Cd typ (pF) 0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35 Cd max (pF) 0.85 0.9 0.9 0.9 0.9 Cd typ (pF) 0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3 Cd max (pF) 0.3 0.32 0.32 0.35
PIN diodes: typical rD @ 1 mA = 2.2 - 2.4

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 3.3 3.4 3.4 3.4 3.3 3.3 rD max () 4.5 5 5 5 5 5 @ IF = 1 mA rD typ () 2.2 2.4 2.4 2.4 2.4 2.4 rD max () 3.3 3.6 3.6 3.6 3.6 3.6 @ IF = 10 mA rD typ () 0.8 1.2 1.2 1.2 1.2 1 rD max () 1.2 1.8 1.8 1.8 1.8 1.8 @ f = 1 MHz @ VR @ VR = 20 V @ VR = 1 V =0V Cd Cd Cd Cd Cd max typ typ max typ (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26
BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX
SOD882T SOD523 SOD323 SOT23 SOD882T SOD882T
1 1 1 2 1 1
SG SG SG SR SG SG
50 60 60 60 60 50
100 100 100 100 100 100
PIN diodes: typical rD @ 1 mA = 3.2 - 3.6

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 4.9 5.5 5.5 5.5 5.5 5.5 rD max () 9 9 9 9 9 @ IF = 1 mA rD typ () 3.2 3.6 3.6 3.6 3.6 3.6 rD max () 6.5 6.5 6.5 6.5 6.5 @ IF = 10 mA rD typ () 1.4 1.5 1.5 1.5 1.5 2 rD max () 2.5 2.5 2.5 2.5 2.5 @ VR =0V Cd typ (pF) 0.3 0.4 0.4 0.4 0.4 0.4 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3 Cd max (pF) 0.4 0.55 0.55 0.55 0.55 @ VR = 20 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2 Cd max (pF) 0.3 0.35 0.35 0.35 0.35 -
BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W
SOD882T SOD523 SOD323 SOT323 SOT323 SOT323
1 1 1 2 2 2
SG SG SG SR CC CA
60 60 50 50 50 50
100 50 50 50 50 50
58
PIN diodes: typical rD @ 1 mA = 10

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 20 20 20 20 20 20 20 20 rD max () 40 40 40 40 40 40 40 40 @ IF = 1 mA rD typ () 10 10 10 10 10 10 10 10 rD max () 20 20 20 20 20 20 20 20 @ IF = 10 mA rD typ () 2 2 2 2 2 2 2 2 @ VR = 0V Cd rD max typ () (pF) 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37 Cd max (pF) @ VR = 20 V Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35
BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W
SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323
1 1 2 2 2 2 2 2
SG SG SR SR CC CC CA CA
175 175 175 100 175 100 175 100
100 100 100 100 100 100 100 100
PIN diodes: typical rD @ 1 mA = 14 - 16

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) 50 50 50 50 50 50 50 100 @ IF = 0.5 mA rD typ () 25 25 25 25 25 25 26 31 rD max () 40 40 40 40 40 40 40 50 @ IF = 1 mA rD typ () 14 14 14 14 14 14 14 16 rD max () 25 25 25 25 25 25 25 26 @ VR = @ IF = 10 mA 0V Cd rD rD max typ typ () () (pF) 3 5 0.4 3 5 0.4 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.4 2.6 4.4 0.48 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 0.34 Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 0.17 Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 0.3 @ VR = (V) 5 5 5 5 1 5 5 20
BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP64LX
SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOD882T SOD882T
1 1 2 2 2 2 1 1
SG SG SR SR CC CC SG SG
50 50 50 50 50 50 50 60
PIN diodes: typical rD @ 1 mA = 40

@ f = 100 MHz Type Package Number of diodes Conf VR max (V) IF max (mA) @ IF = 0.5 mA rD typ () 77 77 77 77 77 rD max () 100 100 100 100 100 @ IF = 1 mA rD typ () 40 40 40 40 40 rD max () 50 50 50 50 50 @ IF = 10 mA rD typ () 5.4 5.4 5.4 5.4 5.4 rD max () 7 7 7 7 7 @ VR =0V Cd typ (pF) 0.57 0.57 0.6 0.6 0.57 @ f = 1 MHz @ VR = 1 V Cd typ (pF) 0.4 0.4 0.43 0.43 0.4 Cd max (pF) @ VR = 20 V Cd max (pF) 0.2 0.2 0.25 0.25 0.2 Cd typ (pF) 0.25 0.25 0.3 0.3 0.25
BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM
SOD523 SOD323 SOT323 SOT23 SOT363
1 1 2 2 4
SG SG SR CC SR
50 50 50 50 50
100 100 100 100 100
Bold = highly recommended product
59
3.2.3 Band-switch diodes

Why choose NXP Semiconductors bandswitch diodes: } Reliable volume supplier } Short leadtimes } Low series Inductance } Low Insertion loss } Low capacitance } High reverse Isolation
Type BA277 BA591 BA891 BAT18
Package SOD523 SOD323 SOD523 SOT23
VR max (V) 35 35 35 35
IF max (mA) 100 100 100 100
rD max () 0.7 0.7 0.7 0.7
@ IF = (mA) 2 3 3 5
@f= (MHz) 100 100 100 200
Cd max (pF) 1.2 0.9 0.9 1
@ VR = (V) 6 3 3 20
@f= (MHz) 1 1 1 1
Bold = Highly recommended product
3.2.4 Schottky diodes

NEW: Schottky diode selection guide on www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help you to choose the right schottky diode for your design.
Why choose NXP Semiconductors schottky diodes: } (Very) low diode capacitance } (Very) low forward voltage } Single and triple-isolated diode } (Ultra / very) small package Applications } Digital applications: - ultra high-speed switching - clamping circuits } RF applications: - diode ring mixer - RF detector - RF voltage doubler Low-capacitance Schottky diodes
Type BAT17 PMBD353 PMBD354 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82 Package SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882 Configuration single dual series dual series single triple isolated single triple isolated single dual series dual c.c dual c.a. triple isolated single VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15 IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30 VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V
60
3.3 RF Bipolar transistors

3.3.1 Wideband transistors
NEW : RF wideband transistor selection guide on www.nxp.com/rftransistors Easy-to-use parametric filters help you to choose the right RF wideband transistor for your design.
Why choose NXP Semiconductors wideband transistors: st th } Broad portfolio (1 - 7 generation) } Short leadtimes } Smallest packages } Volume delivery
Wideband transistors The fT-IC curve represents Transition Frequency (fT) characteristics as a function of collector current (IC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC) & similar transition frequencies (fT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.
Wideband transistors line-up per frequency
100
(33)
bra510
fT (GHz)
(26) (25) (27) (29) (32) (31) (19) (20) (21) (15) (16) (11) (7) (8) (4) (1) (3) (9) (10) (22) (23)
7th generation
5th generation 4th generation
10
(30)
(14) (18)
3rd generation (12)
2nd generation
1st generation
1 0.1
0.2
0.5
10
20
50
100
200
500 IC (mA)
1000
61
Wideband transistors (RF small signal) RF power transistors for handheld equipment
VCEO (max) (V) GUM (typ) (dB)
P tot (max) (mW)
Package
Polarity
IC (max) (mA)
BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81
SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223
8 8 10 10 8 10 9.5
250 250 250 500 250 250 500
400 400 400 2000 2100 2000 2000
NPN NPN NPN NPN NPN NPN NPN
7 7 7 -
1900 1900 1900 -
1 1 1 -
RF wideband transistors generation 1 / 2 / 3

P tot (max) (mW) GUM (typ) (dB) GUM (typ) (dB) VCEO (max) (V)
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
NF (typ) (dB)
Gemeration
@ f = (MHz)
@ VCE = (V)
@ VCE = (V)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA) 5 5 5 -5 -10 5 5 5 5 45 15 5 5 5
@ VCE = (V)
@ VCE = (V) 3.6 3.6 3.6 2000 1000 2000 1000 1000 2000 2000 2000 2000 1000 2000 2000 2000 2000 10 10 10 -10 -5 8 8 8 8 10 8 8 8 8 @ VCE = (V) @f= (MHz)
@f= (MHz)
Package
Polarity
Curve
@f= (MHz)
BFS17 BFS17W BFT25 BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR93AR BFR93AW
1st 1st 1st 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd
3 3 1 18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9 16 15 22 22 22 14 14 8 8 8 22 14 8 8 8
SOT23 SOT323 SOT23
1 1.6 2.3
15 15 5 5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12 15 10 15 15 15 10 10 12 12 12 15 10 12 12 12
25 300 NPN 50 300 NPN 6.5 30 NPN 6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50 150 100 200 200 200 50 50 35 35 60 200 50 35 35 35 32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300 1000 1000 400 400 2000 380 380 300 300 700 2250 300 300 300 300
18
500
12
800 1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000 1000 800 800 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000
4.5 4.5 3.8
@f= (MHz)
Type
500 500 500 1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500 1000 1000 1000 1000 500 1000 1000 1000 1000
2 2 1 0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10 15 15 5 5 45 5 5 5 5
5 5 1 1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5 8 8 8 8 10 8 8 8 8
SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4 SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT323 7 8 5 5 7 8 8 6 6 6 7 8 6 6 5
NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 16 18 13 13 13 17 17 16 16 11 13 13 13 13 500 500 900 900 900 1000 1000 1000 1000 900 1000 1000 1000 1000 100 50 80 80 70 15 15 30 30 70 15 30 30 30
18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10 10 8 4 4 12 8 8 8 8 12 8 8 8 8 12 15 7.5 7.5 7.5 10 10 10 10 13.5 5.5 8 7 7 8
0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4 100 50 80 80 70 15 15 30 30 45 70 15 30 30 30 10 8 4 4 12 8 8 8 8 10 12 8 8 8 8 1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.5
62
@ IC = (mA) 3 2.1 3 3 3 2.5 2.5 2.3 2.3 3 2.7 3 3 2.1
Type
RF wideband transistors generation 4 - 4.5
P tot (max) (mW)
GUM (typ) (dB)
GUM (typ) (dB)
IP3 (typ) (dBm)
VCEO (max) (V)
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
NF (typ) (dB)
Gemeration
BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR
4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4.5 4.5 4.5 4.5
19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21 30 30 31 31
SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5 SOT143R SOT343R SOT143R SOT143R 14 14 14 14
15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10 6 6 6 6
18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100 10 10 35 35
150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270 60 60 210 210
NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2
2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 1800 1800 1800 1800
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30 5 5 15 15
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3
1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3 -
900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000 -
5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 -
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6 -
1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.85 1.85 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.9 1.9 2.7 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2 2 2.1 2.1 1.8 1 1 1.1 1.1
2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000
1.25 1.25 1.25 1.25 1.25 5 5 5 5 5 10 10 10 10 10 10 10 5 5 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5 1 1 3 3
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6 3 3 3 3
4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 1.8 1.8 8.7 8.7
6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3
900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 -
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -
10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 8.5 8.5 19.4 19.4
5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 5 5 15 15
NPN 18 NPN 18 NPN 18.3 NPN 18.3
1800 5 1800 5 1800 15 1800 15
RF wideband transistors generation 5 - 7
P tot (max) (mW)
GUM (typ) (dB)
GUM (typ) (dB)
IP3 (typ) (dBm)
VCEO (max) (V)
f T (typ) (GHz)
IC (max) (mA)
NF (typ) (dB)
NF (typ) (dB)
Gemeration
BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFU725F
5th 5th 5th 5th 5th 5th 5th 7th
32 25 26 27 27 27 29 33
SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R SOT343F
17 22 25 25 25 21
4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250 40
600 16 54 135 135 135 360
NPN NPN NPN NPN NPN NPN NPN
10 22 21 23 22 20 16
1900 2000 2000 2000 2000 2000 2000 5800
1 3 10 25 25 25 80 25
3.6 2 2 2 2 2 2 2
1 0.9 0.8 0.8 0.8 1.2
900 900 900 900 900 900
1 1 2 2 2 8 5
2 2 2 2 2 2 2
1.6 1.2 1.2 1.2 1.2 1.8 0.7
2000 2000 2000 2000 2000 2000 5800
1 1 2 2 2 8 5
2 2 2 2 2 2 2
5 1 5 2 12 2 12 2 12 2 20 3.6 8 2
900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80 5800 25 19 25
70 2.8
136 NPN 18
0.47 2400
@ VCE = (V) 1 2 2 2 2 2 2 63
@ IC = (mA)
@ f = (MHz)
@ f = (MHz)
@ f = (MHz)
@ f = (MHz)
@ VCE = (V)
@ VCE = (V)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ VCE = (V)
@ VCE = (V)
Package
Polarity
Curve
Type
@ VCE = (V) 6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 3 3 3 3
@ IC = (mA)
@ f = (MHz)
@ f = (MHz)
@ f = (MHz)
@ f = (MHz)
@ VCE = (V)
@ VCE = (V)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ IC = (mA)
@ VCE = (V)
@ VCE = (V)
Package
Polarity
Curve
Type
3.4 RF ICs
3.4.1 MMICs
NEW : RF MMIC selection guide on www.nxp.com/mmics Easy-to-use parametric filters help you to choose the right zRF MMIC for your design.
Why choose NXP Semiconductors MMICs: } Reduced RF component count } Easy circuit design-in } Reduced board size } Short time-to-market } Broad portfolio } Volume delivery } Short leadtimes } Excellent gain flatness* } No output inductor necessary anymore*
* = only for new satellite IF gain blocks, BGA28xx-family.
General-purpose wideband amplifiers (50 Ohm gain blocks)

@ Type BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 Notes:
(1)
Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363
Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5
Fu(1) Is @-3 dB (mA) (GHz) 12.6 3.6(2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 3.6 14.6(2) 27.5 2.1 2.5 21.0 (2) 4.58 2.7 3.3 4.3(2) 3.2 15.9(2) 8.0 3.2
NF (dB) 4.8 1.9(2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3(2)
@ 1 GHz Psat Gain(3) (dBm) (dB) 2.8 13.1 -2.3 21.8 21.4 13.2(2) 10.5 23.2(2) 12.5 22.7 4.8 21.3 13.8 30 (2) 9.7 20.1 14.0 35.5(2) 12.9 32.3 -3.4 20.4 -4.0 21.7 11.6 22.9 1.4 23.9
P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0
100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6
Gain(3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0
3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1
Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6
Limits Is (mA) 20 15 50 34 35 25 35 50 35 30 10 8 25 15
P tot (mW) 200 200 200 200 200 200 200 200 200 200 200 200 200 200
Upper -3 dB point, to gain at 1 GHz. (2) Optimized parameter (3) Gain = |S21|2
IF satellite gain blocks

@ Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 Bold Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 Vs (V) 3.3 3.3 3.3 3.3 5.0 5.0 5.0
Fu
Is @-3 dB (mA) (GHz) 9.7 >3 12.4 3.0 16.4 >3 19.6 2.3 7.7 >3 22.7 2.6 15.4 >3
NF (dB) 3.4 3.6 3.4 2.8 3.9 3.7 3.6
@ 1 GHz Gain (dB) 20.2 22.1 25.4 31.2 23.3 31.9 23.4
OIP3 (dBm) 11.5 13.6 18.2 16.1 8.7 20.9 17.7
250 (MHz) 20.0 22.3 26.2 32.0 22.9 31.2 23.0
Gain (dB) @ 950 1550 (MHz) (MHz) 20.2 20.6 22.1 23.0 25.4 25.5 31.2 30.6 23.2 23.9 31.8 32.6 23.3 24.0
2150 (MHz) 20.6 23.8 25.8 28.7 24.0 31.4 24.3
= Highly recommended product
Bold Red = New, highly recommended product
64
2-stage variable-gain linear amplifier

@ Type BGA2031/1 Notes:
(1)
Package SOT363
Vs (V) 3
Is (mA) 51
Frequency Range 800-2500
Gain(1) (dB) 24
@ 900 MHz DG(2) P1dB ACPR Gain(1) (dB) (dBm) (dBc) (dB) 62 11 49 23
@1900 MHz DG(2) P1dB ACPR (dB) (dBm) (dBc) 56 13 49
Vs (V) 3.3
Limits Is (mA) 77
P tot (mW) 200
Gain = GP, power gain. (2) DG = Gain control range
Wideband linear mixer

@ Type BGA2022 Notes:
(1)
Package SOT363
Vs (V) 3
Is (mA) 6
RF Input Frequency Range 800-2500
IF Output Frequency Range 50-500
NF (dB) 9
@ 880 MHz Gain(1) OIP3 (dB) (dBm) 5 4
@1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10
Vs (V) 4
Limits Is (mA) 10
Ptot (mW) 40
Gain = GP, power gain. (2) DG = Gain control range
Low-noise wideband amplifiers

@ Type BGA2001 BGA2003 BGA2011 BGA2012 Notes:
(1)
Package SOT343R SOT343R SOT363 SOT363 MSG

(2)
Vs (V) 2.5 2.5 3 3
Is (mA) 4 10 (2) 15 7
NF (dB) 1.3 1.8 1.5 -
@ 900 MHz Gain IIP3 (dB) (dBm) -7.4 22(1) 24 (1) -6.5 10 19(3) Bold Red =
@1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5(1) -4.5 1.8 16(1) -4.8 10 1.7 16(3)
100 MHz 20 26 24 22
Gain(3) (dB) @ 1 2.6 GHz GHz 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6
3.0 GHz 10.7 10.1 6.5 10.5
Vs (V) 4.5 4.5 4.5 4.5
Limits Is (mA) 30 30 30 15
Ptot (mW) 135 135 135 70
Adjustable bias (3) |S21|2
General-purpose, med. power ampl. (50 ohm gain blocks)

@ Type BGA6289 BGA6489 BGA6589 Notes:
(1)
Package SOT89 SOT89 SOT89
Vs (1) (V) 4.1 5.1 4.8
Is (mA) 84 78 81
NF (dB) 3.5 3.1 3.0

(2)
@ 900 MHz Gain(2) OIP3 (dB) 15 20 22
P1dB
NF (dB) 3.7 3.3 3.3
@1800 MHz Gain(2) OIP3 (dB) 13 16 17
P1 dB
Gain(2) 2.5 GHz 12 15 15
Vs (1) (V) 6 6 6
Limits Is (mA) 120 120 120
Ptot (mW) 480 480 480
(dBm) (dBm) 31 17 33 20 33 21
(dBm) (dBm) 28 15 30 17 32 20
Device voltage without bias resistor.
Gain = |S21|2
Medium power amplifier MMICs for all 400 - 2700 MHz applications
f Type Package (MHz) BGA7124 BGA7127 BGA7024 BGA7027 BGA7130 BGA7133 SOT908 SOT908 SOT89 SOT89 SOT908 SOT908 leadless leadless leaded leaded leadless leadless 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700 Typ (V) 5 5 5 5 5 5 Vcc Max (V) 5.2 5.2 5.2 5.2 5.2 5.2 ICq Max (mA) 170 260 135 260 500 960 Icc Max (mA) 190 280 155 280 520 980 VI(D)L(SHDN) Min (V) 0 0 Max (V) 1.5 1.5 VI(D)H(SHDN) Min (V) 2.5 2.5 Max (V) 5.2 5.2 II(D)L(SHDN) Typ (A) 4 4 PL(1 dB) OIP3 NF Typ / f = 900 MHz (dBm) 25 27 25 27 30 33 (dBm) 38 40 38 40 43 46 dB 4.5 4.5 4.5 4.5 4.5 4.5
SiGe:C MMICs:
Supply voltage Vcc V Min Max Min
@ 1.575 GHz
Supply current Icc mA Typ Max Min Insertion power gain |s21|2 dB Typ Max Noise figure NF dB Typ Vcc = 1.8 V, Min Vcc = 1.8 V, Typ Input power at 1 dB gain compression PI(1 dB) dBm Vcc = 2.5 V, Icc = 5 mA Vcc = Vcc = Vcc = 2.85 V, 2.85 V, 1.8 V, Min Typ Min Vcc = 1.8 V, Typ Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz IP3i dBm Vcc = 2.5 V, Icc = 5 mA Vcc = Vcc = 2.85 V, 2.85 V, Min Typ
Type
Package
BGU7003 BGU7005
SOT891 SOT886
2.2 1.5
2.85 2.85
3 -
15 -
16 -
18.3 16
20 -
0.8 0.9
-14
-10
-20 -
-11
-8
10
0 -
12
65
3.4.2 Low noise LO generators for VSAT and general microwave applications
Why choose NXP Semiconductors low noise LO generators: } Lowest total cost of ownership } Alignment free concept } Easy circuit design-in } Improved LO stability
Low noise LO generators for VSAT applications

fIN(REF) Type Package Typ MHz
TFF1003HN TFF1006HN TFF1007HN SOT616 SOT616 SOT616 50~815 36~586 230.46~234.38
VCC
ICC Max mA
130 130 130
PLL phase noise @ N=64, @100 kHz Max dBc/Hz

-92 -92 -104
PLL fo(RF) (GHz)

12.8~13.05 9.375 14.75~15
Output buffer Po Typ dBm

-5 -5 -3
Input Si Min dBm

-10 -10 -10
RLout(RF) Max dB
-10 -10 -10
V
3.3 3.3 3.3
Low noise LO generators for general microwave applications

fIN(REF) Type Package MHz TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 SOT616 27 - 448 28 - 468 29 - 490 31 - 513 32 - 537 34 - 562 35 - 588 37 - 616 38 - 644 40 - 674 42 - 706 44 - 738 46 - 773 48 - 809 51 - 846 53 - 886 55 - 927 58 - 970 VCC ICC PLL phase noise @ N=64 @ 100 kHz dBc/Hz -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 -95 PLL fo(RF) Typ GHz 7.00 7.33 7.67 8.02 8.40 8.79 9.20 9.63 10.07 10.54 11.03 11.55 12.09 12.65 13.24 13.85 14.50 15.18 Max GHz 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.94 13.54 14.17 14.83 15.52 Output buffer Po Typ dBm -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 -5 Input
RLout(RF) Si Max dB -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 Min dBm -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10
Typ V 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3
Max mA 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
@ 10 MHz Min dBc/Hz -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 -131 GHz 6.84 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.94 13.54 14.17 14.83
66
3.5 RF MOS transistors

3.5.1 JFETs
NEW : JFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right junction field effect transistor for your design.
Why choose NXP Semiconductors JFETs: } Reliable volume supplier } Short leadtimes } Broad portfolio
N-channel junction field-effect transistors for switching

VDS Type BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393 Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23 (V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40 IG (mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30 -Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3 CHARACTERISTICS RDSON C rs (pF) ( ) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5 t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 max 15 15 15 typ 6 6 6 35 35 35 6 6 6 35 35 35 t off (ns) max 25 50 100 20 35 50
P-channel junction field-effect transistors for switching

VDS Type PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177 Package SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 (V) max 30 30 30 30 30 30 30 30 IG (mA) max 50 50 50 50 50 50 50 50 I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20 -Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25 CHARACTERISTICS RDSON C rs (pF) ( ) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4 t on (ns) typ 7 15 35 45 7 15 35 45 max typ 15 30 35 45 15 30 35 45 t off (ns) max -
67
N-channel junction field-effect transistors for general RF applications

VDS Type Package (V) max IG (mA) max I DSS (mA) min max CHARACTERISTICS Vgsoff |Yfs| (V) (mS) min max min max 3 3 3 3 3 3 4.5 4.5 4.5 12 16 20 35 2.5 4 6 7 1 1.5 >1 >10 >10 >10 10 4 4.5 6.5 6.5 6.5 6.5 6.5 6.5 20 25 30 C rs (pF) min Typ.=1.1 Typ.=1.1 Typ.=1.1 0.8 0.8 0.8 0.8 0.8 0.8 2.1 2.1 2.1 typ=1.9 0.4 0.4 0.4 0.4 1.5 1.5 1.5 1.3 1.3 1.3 1.3 max 2.7 2.7 2.7 0.5 0.5 0.5 0.5 2.5 2.5 2.5 2.5
DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 <8 BF245B SOT54 30 10 6 15 <8 BF245C SOT54 30 10 12 25 <8 BF545A SOT23 30 10 2 6.5 0.4 7.5 BF545B SOT23 30 10 6 15 0.4 7.5 BF545C SOT23 30 10 12 25 0.4 7.5 BF556A SOT23 30 10 3 7 0.5 7.5 BF556B SOT23 30 10 6 13 0.5 7.5 BF556C SOT23 30 10 11 18 0.5 7.5 Pre-amplifiers for AM tuners in car radios BF861A SOT23 25 10 2 6.5 0.2 1.0 BF861B SOT23 25 10 6 15 0.5 1.5 BF861C SOT23 25 10 12 25 0.8 2 BF862 SOT23 20 10 10 25 0.3 2 RF stages FM portables, car radios, main radios & mixer stages SOT23 20 10 0.7 3 typ. 0.8 BF510 (1) SOT23 20 10 2.5 7 typ. 1.5 BF511(1) SOT23 20 10 6 12 typ. 2.2 BF512(1) SOT23 20 10 10 18 typ. 3 BF513 (1) Low-level general purpose amplifiers BFR30 SOT23 25 5 4 10 <5 BFR31 SOT23 25 5 1 5 <2.5 General-purpose amplifiers BFT46 SOT23 25 5 0.2 1.5 <1.2 AM input stages UHF/VHF amplifiers PMBFJ308 SOT23 25 50 12 60 1 6.5 PMBFJ309 SOT23 25 50 12 30 1 4 PMBFJ310 SOT23 25 50 24 60 2 6.5 PMBFJ620 SOT363 25 50 24 60 2 6.5
(1)
Bold = Highly recommended product Asymmetrical
68
3.5.2 MOSFETs
NEW : RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right RF MOSFET for your design.
Why choose NXP Semiconductors MOSFETs: } Reference designs for TV tuning } Short leadtimes } Broad portfolio } Smallest packages } 2-in-1 FETs for tuner applications } Reliable volume supply } Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching

VDS Type Package (V) max 10 3 3 3 ID (mA) max 50 10 10 10 I DSS (mA) min max 100 (3) 100 (3) 100 (3) V(p)GS (V) min max 2(1) 0.1(2) 7(4) 7(4) 7(4) RDSON ( ) max 45 20 20 20 CHARACTERISTICS C rs t on (pF) (ns) min max typ max typ.0.6 1 t off (ns) typ max 5 |S21(on)|2 (dB) max 2.5 3 3 |S21(off)|2 (dB) min 30 30 30 MODE
BSS83 SOT143 Silicon RF Switches BF1107 SOT23 SOT143B BF11085) SOT143R BF1108R5)
enh. depl. depl. depl.
N-channel, dual-gate MOSFETs

VDS Type Package (V) max 12 12 12 20 20 20 20 12 12 12 7 7 7 11 11 11 7 7 7 7 7 7 ID (mA) max 40 40 40 20 40 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 I DSX (mA) min max 3 3 3 4 4 4 2 2 2 8 8 8 8 8 8 8 8 8 12 12 12 27 27 27 25 20 20 18 18 18 16 16 16 16 16 16 13 13 13 20 20 20 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 (8) (9)
(6) (7)
CHARACTERISTICS |Yfs| C is C os (mS) (pF) (pF) min max typ typ 36 36 36 10 20 15 15 21 21 22 25 25 25 24 24 24 22 22 22 36 36 36 50 50 50 30 30 30 50 50 50 3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2 2.2 2.2 3.6 3.6 3.6 1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05 1.2(8) 1.2(8) 1.2(8) 1.3 (8) 1.3 (8) 1.3 (8) 1.3 1.3 1.3 2.3 2.3 2.3
F @ 800 MHz (dB) typ 1.5 1.5 1.5 1 1.2(7) 1(7) 1.8 1 1 1 1.7 1.7 1.7 1.5 1.5 1.5 2 2 2 2 2 2
VHF
UHF
With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904(A) SOT143 BF904(AR) SOT143R BF904(AWR) SOT343R BF909 (A) SOT143 BF909(AR) SOT143R BF909(AWR) SOT343R (3) (4) (5)
(1) (2)
-2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1(6) 1(6) 1(6)
X X X X X X X X X X X X X X X X X X X X X
X X X X X X X X X X X X X X X X X X X
Asymmetrical VGS(th) ID VSG Depletion FET plus diode in one package
VGS (th) @ 200 MHz C OSS C ig NXP Semiconductors RF Manual 12th edition 69
N-channel, dual-gate MOSFETs

VDS Type Package (V) max 14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 ID (mA) max 30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 I DSX (mA) min max 8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 V(th)gs (V) min max 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2 1.2(6) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 CHARACTERISTICS |Yfs| C is C os (mS) (pF) (pF) min max typ typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 2.2 2.2 2.2 2.2 2.2 2.2 2.8 (9) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 1.4 1.4 1.4 1.2(8) 1.2(8) 1.2(8) 1.6(8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 F @ 800 MHz (dB) typ 2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 VHF UHF
Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R SOT363 BF1102(R)(10) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R SOT363 BF1203 (11) SOT363 BF1204(10) BF1205C (11)(12)(13) SOT363 BF1205(11)(12)(13) BF1206(11) BF1206F(11) BF1207(11)(13)(14) BF1208 (11)(12)(13) SOT363 SOT363 SOT666 SOT363 SOT666
BF1208D(11)(12)(13) SOT666 BF1210 (11)(12) BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 (10) SOT363 SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363
X X X X X X X X X X X X X X X X X X X X X X X X X X X
X X X X X X X X X X X X X X X X X X X X X X X X X X X

(1)
(3) (4) (5) (7) (8)

(2)
Asymmetrcal VGS(th) I D VSG Depletion FET plus diode in one package @200 MHz C OSS
C ig Two equal dual gate MOSFETs in one package (11) Two low noise gain amplifiers in one package (12) Transistor A: fully internal bias, transistor B: partly internal bias (13) Internal switching function (14) Transistor A: partly internal bias, transistor B: fully internal bias
(9) (10)
70
3.6 RF Modules
NEW : CATV module selection guide on www.nxp.com/catv Easy-to-use parametric filters help you to choose the right CATV module for your design.
Why choose NXP Semiconductors RF Modules: } Excellent linearity, stability and reliability } Rugged construction } Extremely low noise } High power gain } Low total cost of ownership CATV types for Chinese (C-types) and Indian market (OM-types) New in our CATV Hybrid portfolio are two families of products. The C types are specially designed for the Chinese market, fitting two major governmental projects. And the OM types, also called the INDI types, are designed for low-end CATV
infrastructure networks deployed in India. Both families will be extended in the following months to cover most of those two specific market segments. C types (China) } CATV push pulls, chapter 3.6.2 : BGY588C, BGE788C, CGY888C } CATV power doublers, chapter 3.6.3 : BGD712C } CATV optical receivers, chapter 3.6.4 : BGO807C OM types (India) } CATV push pulls, chapter 3.6.2 : OM7650 and OM7670
3.6.1 CATV Reverse Hybrids

Frequency range 5 -75 MHz 5 -120 MHz 5 -200 MHz 5-200 MHz Type number BGY68 BGY66B BGY67 BGY67A BGR269 Gain (dB) 29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5 Slope (dB) -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 0 - 0.6 FL 0.2 0.2 0.2 0.2 0.4 RL IN /RL OUT 20/20 20/20 20/20 20/20 20/20 CTB -68 -66 -67 -67 -57 XMOD -60 -54 -60 -59 -50 CSO -70 @ Ch 4 14 22 22 28 @ Vo (dBmV) 50 48 50 50 50 F @ fmax 3.5 5 5.5 5.5 5.2 I tot (mA) 135 135 230 230 160
3.6.2 CATV Push-Pulls

Frequency range Type number OM7650 BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 OM7670 BGY785A BGE788C BGY787 BGE787B BGE788 BGY883 BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888 BGY1085A Gain (dB) 33.2 - 35.5 33.2 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 33.5 - 35.5 17.7 - 18.7 21 - 22 33.2 - 35.2 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 33.5 - 34.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5 18 - 19 Slope (dB) 0.2 - 2 0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 1/4 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0.5 - 2.5 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5 0-2 FL 0.5 0.2 0.2 0.4 0.4 0.2 0.2 0.3 0.6 0.5 0.5 0.5 0.3 0.5 0.3 0.3 0.3 0.5 0.6 0.5 0.5 0.3 RL IN /RL OUT 10/10 16/16 20/20 20/20 20/20 20/20 20/20 20/20 10/8 20/20 16/16 20/20 20/20 20/20 20/20 14/14 20/20 20/20 20/20 20/20 21/21 20/20 20/20 20/20 CTB -45 -57 -59 -57 -57 -57 -55 -54 -43 -53 -49 -53 -50 -49 -61 -61 -55 -68 -60 -60 -60 -53 XMOD -62 -58 -60 -59 -60 -54 -56 -52 -54 -51 -61 -61 -61 -59 -60 -59 -54 CSO -57 -62 -59 -54 -57 -62 -56 -52 -54 -53 -52 -53 -56 -52 -61 -61 -57 -66 -55 -60 -55 -56 @ Ch 77 77 77 77 77 77 85 85 110 110 110 110 110 110 49 129 129 49 129 112 49 49 49 150 @ Vo (dBmV) 44 44 44 44 44 44 44 44 44 44 44 44 44 44 44 59 59 44 40 44 44 44 44 44 F @ fmax 8 8 8 7 6.5 6 8.5 6.5 8 7 8 6.5 7 7 8.5 8 8 8 6.5 4.0 7.0 6.5 7 7.5 I tot (mA) 340 345 240 240 340 340 240 240 340 240 325 240 320 320 235 240 240 240 235 280 340 340 340 240 71
40 - 550 MHz
40 - 600 MHz
40 - 750 MHz
40 - 870 MHz
40 -1000 MHz
CATV Push-Pulls 1 GHz

Freq range 40-1000 MHz 40-1000 MHz 40-1000 MHz Type CGY1041 CGY1043 CGY1047 Gain 22 24 28 Slope 1.0 - 2.0 dB 1.0 - 2.0 dB 1.0 - 2.0 dB fl 0.5 0.5 0.5 RL IN /RL OUT 20/18 dB 20/18 dB 20/18 dB CTB -62 dBc -62 dBc -62 dBc Xmod -58 dBc -58 dBc -58 dBc CSO -64 dBc -64 dBc -64 dBc @ Ch 79NTSC+75digital 79NTSC+75digital 79NTSC+75digital @ Vout 44 dBmV flat 44 dBmV flat 44 dBmV flat NF 4.0 dB 4.0 dB 4.0 dB Itot 270 mA 270 mA 270 mA
3.6.3 CATV power doublers

Frequency range 40 - 550 MHz Type number Gain (dB) 18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 19.5 - 20.5 19.7 - 20.3 21.2 - 21.8 20.5 - 22.5 23 - 25 21 23 25 23 25 Slope (dB) 0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.2 - 2 0.4 - 1.4 0.5 - 1.5 1-2 1-2 1.5 1.5 1.5 0 - 1.5 0-1 FL 0.3 0.5 0.25 0.35 0.4 0.5 0.35 0.5 0.5 0.5 0.5 0.5 0.5 0.3 0.3 0.5 0.5 0.5 0.3 0.3 RL IN /RL OUT 20/20 20/20 20/20 23/23 17/17 20/20 23/23 20/20 20/20 23/23 20/20 22/25 22/25 18/18 18/18 -20/-20 -20/-20 -20/-20 17.5/20 17.5/20 CTB -65 -58 -58 -62 -62 -57 -61 -54 -58 -53 -57.5 -55 -66 -66 -65 -65 -65 -70 -70 XMOD -68 -62 -62 -63 -61 -62 -59 -62 -61 -62 -58 -58 -58 -68 -68 -68 -67 -67 CSO -62 -58 -58 -63 -63 -56 -62 -56 -60 -54 -59 -56 -68 -68 -68 -68 -68 -68 -68 @ Ch 77 110 110 112 112 110 112 129 129 132 129 132 129 132 132 79 channels 79 channels 79 channels 79 + 75* 79 + 75* @ Vo (dBmV) 44 44 44 44 44 44 44 59 44 44 44 44 44 48 48 50 50 50 59 59 F @ fmax 8 8.5 8.5 7 7 8.5 7 8 9 7.5 7.5 7.5 7.5 3.5 3.5 <6 <6 <6 5.0 5.0 Itot (mA) 435 435 435 410 410 435 410 450 410 410 410 410 375 450 450 470 470 470 450 450
BGD502 BGD702 BGD702N BGD712 40 -750 MHz BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD804 40 - 870 MHz BGD814 BGD816L CGD942C CGD944C CGD1040Hi CGD1042Hi 40 - 1000 MHz CGD1044Hi CGD1042H CGD1044H
Bold Red = New, highly recommended product Bold = Highly recommended product * = digital channels
3.6.4 CATV optical receivers

Frequency Type number range Forward Path Receiver BGO807 BGO807/FC0 BGO807/SC0 BGO807C 40 - 870 MHz BGO807C/FC0 BGO807C/SC0 BGO827 BGO827/FC0 BGO827/SC0 Bold = Highly recommended product * NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office. Rmin (V/W) 800 750 750 800 750 750 800 750 750 Slope (dB) 0-2 0-2 0-2 0-2 0-2 0-2 0-2 0-2 0-2 FL S22 (dB) 11 11 11 11 11 11 11 11 11 d3 d2 @fm (MHz) 854.5 854.5 854.5 854.4 854.5 854.5 854.5 854.5 854.5 @Pi (mW) 1 1 1 1 1 1 1 1 1 F @ fmax Conn. Itot (mA) 205 205 205 205 205 205 205 205 205
1 1 1 1 1 1 1 1 1
-71 -71 -71 -71 -71 -71 -73 -73 -73
-55 -55 -55 -54 -55 -55 -57 -57 -57
8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5 8.5
FC SC FC SC FC SC
Description Frequency range: minimum and maximum frequency in MHz at which data are characterized @Ch/@Vo. The number of channels and the output voltage at which CTB, XM, CSO and d2 are characterized @fm. Measurement frequency is F. Noise Figure is in dB or Noise in pA/Sqrt(Hz). FL is Flatness. Rmin is Minimum responsivity of optical receivers.
72
3.7 RF power transistors

NEW: RF power transistor selection guide on www.nxp.com/rfpower Easy-to-use parametric filters help you to choose the right RF power transistor for your design.
3.7.1 Base Station transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview Device naming conventions RF power base stations transistors
-45 P R B N G gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device P1dB power option: earless package option: low thermal resistivity operating frequency (in 100MHz; maximum) G: standard LDMOS LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si B L F 6 G 22 L S
Why choose NXP Semiconductors RF power transistors for base stations: B L F 6 G 22 L S -45 P R B N G gullwing-shaped leads } Leading technology (generation 6 and 7 of LDMOS) specialty option: current sense lead } Highest (system) efficiency enhanced ruggedness } Best ruggedness push-pull device P1dB power option: earless package } Advanced Doherty amplifier designs option: low thermal resistivity operating (in 100MHz; maximum) } Industrys first frequency 3.8 GHz Doherty G: standard LDMOS LDMOS technology generation } Industrys first fully integrated Doherty amplifier NXP offers complete line-ups of RF power transistors operation from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si
3.7.1.1 0.8 - 1.0 GHz line-up

Function driver driver driver driver driver final final final final final final Type BLF6G21-10G BLM6G10-30 BLM6G10-30G BLF6G10-45 BLF6G10S-45 BLF6G10-135RN BLF6G10LS-135RN BLF6G10-160RN BLF6G10LS-160RN BLF6G10-200RN BLF6G10LS-200RN Package SOT538A SOT834-1 SOT822-1 SOT608A SOT608B SOT502A SOT502B SOT502A SOT502B SOT502A SOT502B frange MHz 10 - 2200 800 - 1000 800 - 1000 800 - 1000 800 - 1000 800 - 1000 800 - 1000 800 - 1000 800 - 1000 688 - 1000 688 - 1000 PL(AV) W 0.6 2 2 1 1 26.5 26.5 32 32 40 40
D
% 15 10 10 7.8 8 28 28 27 27 28.5 28.5
Gp dB 18.5 30 30 22.5 23 21 21 22.5 22.5 20 20
@VDS V 28 28 28 28 28 28 28 32 32 28 28
Mode of operation WCDMA, TD-SCDMA, GSM, EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA
73
3.7.1.2 1.8 - 2.0 GHz line-up

Function driver driver driver driver final final final final final final final final final Type BLF6G21-10G BLF6G20-40 BLF6G20-45 BLF6G20S-45 BLF6G20-75 BLF6G20LS-75 BLF6G20-110 BLF6G20LS-110 BLF6G20LS-140 BLF6G20-180PN BLF6G20-180RN BLF6G20LS-180RN BLF6G20-230PRN Package SOT538A SOT608A SOT608A SOT608B SOT502A SOT502B SOT502A SOT502B SOT502B SOT539A SOT502A SOT502B SOT539A frange MHz 10 - 2200 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 1800 - 2000 PL(AV) W 0.6 2.5 2.5 2.5 29.5 63 29.5 63 25 25 35.5 50 40 40 50
D
% 15 15 14 14 37.5 52 37.5 52 31 31 30 29.5 27 27 29.5
Gp dB 18.5 18.8 19.2 19.2 19 19 19 19 19 19 16.5 18 17.2 17.2 16.5
@VDS V 28 28 28 28 28 28 28 28 28 28 28 32 30 30 30
Mode of operation WCDMA. TD-SCDMA. GSM. EDGE WCDMA WCDMA WCDMA EDGE CW EDGE CW WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA
3.7.1.3 2.0 - 2.2 GHz line-up

Function driver driver driver driver driver final final final final final final final final integrated Doherty integrated Doherty integrated Doherty integrated Doherty Type BLF6G21-10G BLM6G22-30 BLM6G22-30G BLF6G22-45 BLF6G22S-45 BLF6G22LS-75 BLF6G22LS-100 BLF6G22LS-130 BLF7G22L-130 BLF7G22LS-130 BLF6G22-180PN BLF6G22-180RN BLF6G22LS-180RN BLD6G21L-50 BLD6G21LS-50 BLD6G22L-50 BLD6G22LS-50 Package SOT538A SOT834-1 SOT882-1 SOT608A SOT608B SOT502B SOT502B SOT502B SOT502A SOT502B SOT539A SOT502A SOT502B SOT1130A SOT1130B SOT1130A SOT1130B frange MHz 10 - 2200 2100 - 2200 2100 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2000 - 2200 2010 - 2025 2010 - 2025 2110 - 2170 2110 - 2170 PL(AV) W 0.6 2 2 2.5 2.5 17 25 30 44.8 44.8 50 40 40 8 8 8 8
D
% 15 9 9 13 13 30.5 29 28.5 32 32 27.5 25 25 38.9 38.9 39 39
Gp dB 18.5 30 30 18.5 18.5 18.7 18.5 17 18.5 18.5 17.5 16 16 12.6 12.6 12.6 12.6
@VDS V 28 28 28 28 28 28 28 28 28 28 32 30 30 28 28 28 28
Mode of operation WCDMA, TD-SCDMA, GSM, EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA TD-SCDMA TD-SCDMA WCDMA WCDMA
3.7.1.4 2.5- 2.7 GHz line-up

Function driver driver driver driver driver driver final final final final Type BLF6G27-10 BLF6G27-10G BLF6G27-45 BLF6G27S-45 BLF6G27-75 BLF6G27LS-75 BLF6G27-135 BLF6G27LS-135 BLF7G27L-200P BLF7G27LS-200P Package SOT975B SOT975C SOT608A SOT608B SOT502A SOT502B SOT502A SOT502B SOT539A SOT539B frange MHz 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 2500 - 2700 PL(AV) W 2 2 7 7 9 9 20 20 20 20
D
% 20 20 24 24 23 23 22.5 22.5 25 25
Gp dB 19 19 18 18 17 17 16 16 16.5 16.5
@VDS V 28 28 28 28 28 28 32 32 28 28
Mode of operation WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX
3.7.1.5 3.5 - 3.8 GHZ line-up

Function driver driver driver driver driver driver final final Type BLF6G38-10 BLF6G38-10G BLF6G38-25 BLF6G38S-25 BLF6G38-50 BLF6G38LS-50 BLF6G38-100 BLF6G38LS-100 Package SOT975B SOT975C SOT608A SOT608B SOT502A SOT502B SOT502A SOT502B frange MHz 3400 - 3600 3400 - 3600 3400 - 3800 3400 - 3800 3400 - 3800 3400 - 3800 3400 - 3600 3400 - 3600 PL(AV) W 2 2 4.5 4.5 9 9 18.5 18.5
D
% 20 20 24 24 23 23 21.5 21.5
Gp dB 14 14 15 15 14 14 13 13
@VDS V 28 28 28 28 28 28 28 28
Mode of operation WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX WiMAX
74
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview Why choose NXP Semiconductors RF power transistors for broadcast / ISM applications: } Highest power } Best ruggedness } Best broadband performance } Best-in-class design support } Very low thermal resistance design for unrivalled reliability NXPs leading LDMOS technologies together with advanced package concepts enable best in class performing power amplifiers. We offer industrys highest power and best ruggedness for all broadcast technologies. Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and High Frequency (HF) applications as well as covering ISM frequency bands.
3.7.2.1 0 - 1000 MHz (HF/ VHF / ISM) high voltage LDMOS line-up
Function driver driver driver final Type BLF871 BLF871S BLF881 BLF645 Package SOT467C SOT467B SOT467C SOT540A frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 0 - 1300 PL(AV) W 100 24 100 24 120 30 100 100
D
% 47 33 47 33 48 31 43 60
Gp dB 21 22 21 22 21 21 18 17
@VDS V 42 42 42 42 50 50 32 32
Mode of operation 2-TONE DVB-T 2-TONE DVB-T 2-TONE DVB-T 2-TONE CW
3.7.2.2 10 - 500 MHz (HF / VHF / ISM) LDMOS line-up

Function driver driver driver driver final final final final Type BLF871 BLF871S BLF881 BLF571 BLF573S BLF574 BLF578 BLF645 Package SOT467C SOT467B SOT467C SOT467C SOT502B SOT539A SOT539A SOT540A frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1300 0 - 1300 PL(AV) W 100 24 100 24 120 30 20 300 400 1000 1200 100 100
D
% 47 33 47 33 48 31 70 70 70 80 70 43 60
Gp dB 21 22 21 22 21 21 27,5 27,2 26,5 24 24 18 17
@VDS V 42 42 42 42 50 50 50 50 50 50 50 32 32
Mode of operation 2-TONE; CW DVB-T 2-TONE; CW DVB-T 2-TONE DVB-T 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE; 2-TONE; CW 1-TONE, CW 1-TONE; PULSED RF 2-TONE CW
3.7.2.3 460 - 870 MHz (UHF) LDMOS line-up

Function driver driver driver driver final final final Type BLF571 BLF871 BLF871S BLF881 BLF645 BLF878 BLF888 Package SOT467C SOT467C SOT467B SOT467C SOT540A SOT979A SOT979A frange MHz 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1000 0 - 1200 0 - 1200 470 - 860 470 - 860 470 - 860 470 - 860 PL(AV) W 20 100 24 100 24 120 30 100 100 300 75 250 110
D
% 70 47 33 47 33 48 31 43 60 60 32 45 30
Gp dB 27,5 21 22 21 22 21 21 18 17 21 21 20 20
@VDS V 50 42 42 42 42 50 50 32 32 42 42 50 50
Mode of operation 1-TONE; 2-TONE; CW 2-TONE; CW DVB-T 2-TONE; CW DVB-T 2-TONE DVB-T 2-TONE CW CW; class AB DVB-T 2-TONE DVB-T 75
3.7.3 Microwave LDMOS RF power transistors

http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview Device naming conventions RF power microwave transistors
B L S 6 G 2731 S -120 G option: gullwing shaped leads P1dB power S: earless package P: pallet frequency band (in 100MHz; here: 2700-3100) G: standard LDMOS (<=28V) H: high voltage LDMOS (50V) LDMOS technology generation A: avionics frequency band operation L: L-Band frequency operation S: S-Band frequency operation L: high frequency power transistor B: semiconductor die made of Si
Why choose NXP Semiconductors microwave RF power transistors: } High gain } High efficiency } Highest reliability } Improved pulse droop and insertion phase } Improved ruggedness - overdrive without risk to +5 dB } Reduces component count and helps simplify L- and S-band radar design } Uses non-toxic, ROHS compliant packages
3.7.3.1 Avionics LDMOS transistors

Function driver final final final Type BLL6H0514-25 BLA6H0912-500 BLA6H1011-600 BLA6G1011-200R Package SOT467C SOT643A SOT539A SOT502A2 frange MHz 500 - 1400 960 - 1215 1030 - 1090 1030 - 1090 PL W 25 (min) 500 600 200
D
% 55 50 52 65
Gp dB 20 17 19 20
@VDS V 50 50 50 28
Mode of operation PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB
3.7.3.2 L-band LDMOS transistors

Function driver final Type BLL6H0514-25 BLL6H1214-500 Package SOT467C SOT539A frange MHz 500 - 1400 1200 - 1400 PL W 25 (min) 600 (min)
D
% 55 50
Gp dB 20 17
@VDS V 50 50
Mode of operation PULSED RF; class AB PULSED RF; class AB
3.7.3.3 S-band LDMOS transistors

Function driver driver driver driver final final final final final final Type BLL6H0514-25 BLS6G2731-6G BLS6G3135-20 BLS6G3135S-20 BLS6G2731-120 BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135S-120 BLS7G2933P-200 Package SOT467C SOT975C SOT608A SOT608B SOT502A SOT502B SOT922-1 SOT502A SOT502B pallet frange MHz 500 - 1400 2700 - 3100 3100 - 3500 3100 - 3500 2700 - 3100 2700 - 3100 2900 - 3300 3100 - 3500 3100 - 3500 2900 - 3300 PL W 25 (min) 6 20 20 120 120 130 120 120 200
D
% 55 33 45 45 48 48 47 43 43 45
Gp dB 20 15 15,5 15,5 13,5 13,5 12,5 11 11 11
@VDS V 50 32 32 32 32 32 32 32 32 32
Mode of operation PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB PULSED RF; class AB
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Experience 2-way communication via satellite

Look at TFF1xxxHN RF ICs for Vsat, chapter 2.6
4. Design-in tools
This chapter will make it easier to find and get hold of design-in information and materials, with web links or references to the NXP representative / authorized distributor.
4.1 S-Parameters
S-Parameters help you to simulate the behaviour of our devices to your specific adjustments for e.g. voltage, current. Wideband transistors, FETs & MMICs First, click on the type number, which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the S-Parameters.
Wideband transistors BFG540W BFR93AW BFG541 BFS17 BFG590 BFS17A BFG591 BFS17W BFG93A BFS25A BFG94 BFS505 BFG97 BFS520 BFM505 BFS540 BFM520 BFT25 BFQ149 BFT25A BFQ18A BFT92 BFQ19 BFT92W BFQ67 BFT93 BFQ67W BFT93W BFR106 BFU725F BFR505 BRF505T BFR520 PBR941 BFR540 PBR951 BFR92A PRF947 BFR92AW PRF949 BFR93A PRF957 FETs BF1212 BF1212R BF1212WR MMICs BGM1012 BGM1013 BGM1014 BGM2011 BGA2715 BGA2716 BGA2717 BGA2011 BGA2012 BGA6289
4.2 Simulation models

4.2.1 Spice models
Spice models help you to create the optimal performance and to understand which external components have a certain influence on that performance. Wideband transistors, FETs & Varicaps diodes First, click on the type number which takes you directly to the corresponding product information page on the NXP Semiconductors internet. Second, scroll down on this product information page to find the Spice models.
Wideband transistors BFG505 BFG92A/X BFG505/X BFG93A BFG505W/X BFG94 BFG520 BFG97 BFG520/X BFM505 BFG520/XR BFM520 BFG520W BFQ149 BFG520W/X BFQ18A BFG540 BFQ19 BFG540/X BFQ540 BFG540/XR BFQ67 BFG540W BFQ67W BFG540W/X BFR106 BFG540W/XR BFR505 BFG541 BFR505T BFG590 BFR520 BFG590/X BFR540 BFG591 BFR92A BFG67 BFR92AW BFG67/X BFR93A FETs BF909
BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG520 BFG520W BFG540
BF1211 BF1211R BF1211WR
BF511 BF513 BF862
BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W
BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W PBR941 PBR951 PRF947 PRF949 PRF957
BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGU7003 BGA2712 BGM1011
BGA6489 BGA6589 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866
BF862 BF904
BF908
BF998
BB145B BB149 BB149A
BB156 BB179 BB179B
Varicap diodes BB201 BB202 BB207
BB208-02
4.2.2 ADS large signal models

For easy design-in, NXP provides best-in-class large signal models for most of the RF power transistors. Please refer to the links provided on the respective product information pages under www.nxp.com/rfpower.
78
The following models are currently available:

BLF7G22_130 BLD6G22-150P BLF571 BLF573 BLF574 BLF578 BLF645 BLF6G10-135R ADS Models BLF6G10-200R BLF6G22-45 BLF6G10-45 BLF6G27-10 BLF6G20-180P BLF6G27-10G BLF6G20-230P BLF6G27LS-135 BLF6G20-45 BLF6G27-45 BLF6G20LS-180RN BLF6G38LS-100 BLF6G22-180P BLF6G38-10 BLF6G22LS-180RN BLF6G38-10G BLF6G38-25 BLF6G38-50 BLF871 BLF878 BLF888 BLS6G3135-120 BLS6G3135-20
4.4.2 RF power transistor demo boards

Demo boards are available (although limited) via your local NXP representative (see the last chapter: Web Links and Contacts).
4.3 Application notes

http://www.nxp.com/products/all_appnotes/ For the application notes we refer you to chapter 1 of this manual. For each application, we have given the recommended application notes which are available on the internet (with interactive link) or via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).
4.5 Samples of products in development

For development samples, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts) to order the latest versions at the RF development team.
4.4 Demo boards
4.6 Samples of released products

For all released and most non-released products for RF power, samples are available in the sample warehouse. Look on the home page of the NXP web site for the link to the online sample store: www.nxp.com
4.7 Datasheets
4.4.1 IC, MMIC and SiGe:C transistor demo boards
MMIC demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).
RF small signal demo boards BGA2771 BGM1011 BGA2776 BGM1012 BGA2800 BGM1013 BGA2801 BGM1014 BGA2815 BGU7003 BGA2816 BGU7005 BGA2850 TFF1003HN BGA2865 TFF1006HN BGA2866 TFF11070HN BGA6289 TFF11073HN BGA6489 TFF11077HN BGA6589 TFF11080HN BGA6589 TFF11084HN
For all released and most non-released products for RF power, datasheets are available on the NXP Semiconductors internet. Simply clicking on a product type (in this manual chapter 1 or 2) takes you to the corresponding product information page on the NXP Semiconductors website.
BFU725F BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748
TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN
4.8 Design-in support

If you need special design-in support from our design-in engineers, please ask your local NXP representative or authorized distributor (see last chapter: Web Links and Contacts), to pass on your request to the RF development teams.
4.9 NEW: interactive selection guides

For all RF product groups, you can find easy-to-use parametric filters to help you to chose the right device for your design, e.g. www.nxp.com/mmics, click on selection guide.
79
5. Cross-references & replacements

NXP cross-references: http://www.nxp.com/search/index.html NXP end-of-life: http://www.nxp.com/products/eol/
5.1 Cross-references: Manufacturer types versus NXP types

In alphabetical order of manufacturer type Abbreviations: BS diode CATV PD CATV PPA CATV PPA/HG CATV RA FET Standard MMIC Varicap WB trs 1-4 WB trs 5-7
Manufacturer type 1SS314
Band Switch Diode CATV Power Doubler CATV Push Pull Amplifier CATV Push Pull Amplifier High Gain CATV Reverse Amplifier Field Effect Transistor Standard in Industry Monolithic Microwave Integrated Circuit Varicap Diode Wideband Transistor 1-4 generation Wideband Transistor 5-7 generation
Manufacturer NXP type Product family Manufacturer type Manufacturer NXP type Product family
1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239 1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 1SV278 1SV279 1SV282 1SV282 1SV283 1SV283 80
Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba
BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BB179 BB179 BB178 BB187 BB178 BB187
BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Varicap Varicap Varicap Varicap Varicap Varicap
1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308 1SV322 1T362 1T362A 1T363A 1T368A 1T369 1T379 1T397 1T399 1T402 1T403 1T404A 1T405A 1T406 1T408 2F1G20DS 2F1G20P 2F1G22DS 2F1G23P 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N3330 2N3331 2N4220
Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba Toshiba PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard
BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02 BB202LX BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB178 BB187 BB187 BB182 BB187 CGD1042H CGY1041 CGD1042H CGY1043 CGD1044H BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C J176 J176 BF245A
Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap CATV PD CATV PP CATV PD CATV PP CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807 2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 2SC5624 2SC5631 2SC6023 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508 3SK290 BA592 BA595 BA595 BA597 BA885 BA892 BA892-02V BA892-02V
Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas Renesas Renesas Sanyo Standard Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon
BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W BFG425W BFQ540 BFG424W J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 J113 PMBFJ308 BF998WR BA591 BAP51-03 BAP70-03 BAP70-03 BAP70-03 BA891 BA277 BA891
FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 5-7 FET FET FET FET FET FET FET FET FET FET FET FET FET FET BS diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode PIN diode
BA892V-02V-GS08 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR63V-02V-GS08 BAR63V-05W-GS08 BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64V-02V-GS08 BAR64V-04-GS08 BAR64V-05-GS08 BAR64V-06-GS08 BAR64V-06W-GS08 BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR65V-02V-GS08 BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005S BF1009S BF1009SW BF2030
Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon
BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63LX BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP63-02 BAP63-05W BAP64LX BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64-02 BAP64-04 BAP64-05 BAP64-06 BAP64-06W BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP65-02 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105 BF1109 BF1109WR BF1101
PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET
81
Manufacturer type
Manufacturer
NXP type
Product family
Manufacturer type
Manufacturer
NXP type
Product family
BF2030R BF2030W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998-GS08 BF998R BF998R-GS08 BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP181T-GS08 BFP182 BFP183 BFP183R BFP183T-GS08 BFP183TW-GS08 BFP193 BFP193W BFP196T-GS08 BFP196TR-GS08 BFP196TRW-GS08 BFP196TW-GS08 BFP196W BFP280 BFP405 BFP420 BFP450 BFP67-GS08 BFP67R-GS08 BFP740 BFP740F BFP81 BFP92A-GS08 BFP93A BFP93A-GS08 BFQ193 BFQ19S BFQ67-GS08 BFR106 BFR180 BFR180W BFR181 BFR181T-GS08 BFR181TW-GS08 BFR181W BFR182 BFR182W BFR183 BFR183T-GS08 BFR183TW-GS08 BFR183W BFR193 BFR193TW-GS08
Infineon Infineon Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay Vishay Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Vishay Infineon Vishay Infineon Infineon Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay
BF1101R BF1101WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998 BF998R BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG520/X BFG520W/X BFG540/X BFG540W/XR BFG540/X BFG540/XR BFG540W/XR BFG540W/X BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFG67/X BFG67/X BFU725F BFU725F BFG92A/X BFG92A/X BFG93A/X BFG93A/X BFQ540 BFQ19 BFQ67W BFR106 BFR505 BFS505 BFR520 BFR520 BFS520 BFS520 PBR941 PRF947 PBR951 PBR951 PRF957 PRF957 PBR951 PRF957
FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4
BFR193W BFR196T-GS08 BFR196TW-GS08 BFR35AP BFR92AL BFR92AW-GS08 BFR92P BFR92W BFR93A BFR93AL BFR93AW BFR93AW-GS08 BFR93-GS08 BFS17-GS08 BFS17-GS08 BFS17L BFS17P BFS17W BFS17W-GS08 BFS481 BFS483 BFT92 BFT93 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMY91 CMY91 CXE1089Z CXE1089Z D5540185 D7540185 D7540200 D8640185 EC2C03C F2046 F2048 F2247 FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894
Infineon Vishay Vishay Infineon Freescale Vishay Infineon Infineon Infineon Freescale Infineon Vishay Vishay Vishay Vishay Freescale Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon Infineon RFMD RFMD Standard Standard Standard Standard Sanyo POLYFET POLYFET POLYFET Skyworks Skyworks Agilent Agilent Agilent Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent
PRF957 BFR540 BFS540 BFR92A BFR92A BFR92AW BFR92A BFR92AW BFR93A BFR93A BFR93AW BFR93AW BFR93A BFS17 BFS17A BFS17 BFS17A BFS17W BFS17W BFM505 BFM520 BFT92 BFT93 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA2022 BGA2022 BGA6489 BGA6589 BGD502 BGD702 BGD704 BGD802 BB145B BLF542 BLF543 BLF522 BB148 BB178 BFG410W BFG425W BFG480W BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05
WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC WB trs 1-4 MMIC MMIC CATV PD CATV PD CATV PD CATV PD Varicap Broadcast Broadcast Broadcast Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode
82
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Manufacturer type
Manufacturer
NXP type
Product family
HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315 HVU316 HVU363A HVU363A HVU363B INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S KP2310R KTK920BT KTK920T KV1835E LC421 MA2S077 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368 MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MC7712 MC7716 MC7722 MC7726 MC-7831 MC-7831-HA MC-7832 MC-7832-HA MC-7833 MC-7836 MC-7836 MC-7845 MC-7846
Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Agilent Standard Standard Standard Standard Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toko KEC KEC Toko POLYFET Standard Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148 BB131 BB148 BB153 BB148 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP51-02 BAP51-03 BAP63-02 BAP50-02 BA891 BAP64-04W BF1108 BF1108R BB199 BLF544 BA277 BB178 BB187 BB179 BB182 BB202 BB153 BB148 BB131 BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGY785A BGY787 BGY785A BGY787 BGY885A BGY1085A BGY887 CGY1041 BGY887B BGY887B CGY1047 BGD802 CGD942C
PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode FET FET Varicap Broadcast BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PPA CATV PPA CATV PPA CATV PPA CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PD CATV PD
MC-7847 MC7852 MC7866 MC-7881 MC-7882 MC-7883 MC-7884 MC-7891 MC-7893 MC-7894 MC-7896 MCH4009 MD7P19130 MD7P19130H MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 MHW6182-6 MHW6182T MHW6185B MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C2 MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N
NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC Sanyo Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
CGD944C BGY885A BGD816L BGD802 BGD814 CGD942C CGD944C CGD1042H CGD1042H CDG1044H CGD1044H BFG424F BLF6G20LS-110 BLF6G20LS-75 BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A BGY685A BGY585A BGD502 BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C
CATV PD CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD WB trs 5-7 Base Station Base Station CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP
83
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MHW9146 MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310 MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MPF102 MPF970 MPF971 MRF18030ALR3(1) MRF18030ALR3(1) MRF18030ALSR3(1) MRF18030ALSR3(1) MRF18030BLR3(1) MRF18030BLR3(1) MRF18030BLSR3(1) MRF18030BLSR3(1) MRF18060AL(2) MRF18060BL(2) MRF18085AL(2) MRF18085BL(2) MRF18090AR3(1) MRF18090B(2) MRF19030L(2) MRF19030L(2) MRF19045L(2) MRF19060L(2) MRF19085LR3(1) MRF19085LSR3(1) MRF19090R3(1) MRF19090SR3(1) MRF19125(2) MRF21010LR1(1) MRF21010LSR1(1) MRF21030LR3(1) MRF21030LSR3(1) MRF21045LR3(1) MRF21045LSR3(1)
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale ONSemicond. ONSemicond. Freescale Freescale Standard Standard Standard Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BGY883 BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGY587B BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310 BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BF245A J174 J176 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLC6G20-75 BLC6G20-75 BLC6G20-75 BLC6G20-75 BLF6G20-110 BLF6G20-110 BLF6G21-30 BLF6G20-45 BLF6G20-45 BLF6G20-45 BLF6G20-110 BLF6G20-110 BLF6G20-110 BLF6G20-110 BLF6G20-140 BLF3G21-6 BLF3G21-6 BLF6G22-30 BLF6G22-45 BLF6G22-45 BLF6G22-45
CATV PPA CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD FET FET FET Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station
MRF21060L(2) MRF21085L(2) MRF21090(2) MRF21120R6(1) MRF21125(2) MRF21125SR3(1) MRF21180R6(1) MRF281SR1(1) MRF281ZR1(1) MRF282SR1(1) MRF282ZR1(1) MRF284LR1(1) MRF284LSR1(1) MRF377H(2) MRF577 MRF5811L MRF5P20180HR6(1) MRF5P21180HR6(1) MRF5S19060N(2) MRF5S19090HR3(1) MRF5S19090HSR3(1) MRF5S19100H(2) MRF5S19130H(2) MRF5S19150H(2) MRF5S21045N(2) MRF5S21090HR3(1) MRF5S21090HSR3(1) MRF5S21100HR3(1) MRF5S21100HSR3(1) MRF5S21130HR3(1) MRF5S21130HSR3(1) MRF5S21150H(2) MRF6P18190HR6(1) MRF6P21190HR6(1) MRF6P3300H(2) MRF6S18060N(2) MRF6S18100N(2) MRF6S18140H(2) MRF6S19060N(2) MRF6S19100H(2) MRF6S19100N(2) MRF6S19120H(2) MRF6S19140H(2) MRF6S20010 MRF6S20010 MRF6S20010N(2) MRF6S20010N(2) MRF6S21050L(2) MRF6S21060N(2) MRF6S21100H(2) MRF6S21100N(2) MRF6S21140H(2) MRF6S21190H MRF6S21190H MRF6S27015N MRF6S27085H MRF6S27085HS MRF6V2010N(2) MRF6V2150N(2) MRF6V2300N(2) MRF6V2300N(2) MRF6VP3450 MRF7S18125AHS MRF7S18170H(2) MRF7S19080H(2) MRF7S19080HS MRF7S19100 MRF7S19100N(2) MRF7S19120N(1) MRF7S19170H(2) MRF7S19210H PTFA192401F MRF7S21110HS MRF7S21170 MRF7S38010H MRF7S38040H MRF917 MRF927 MRF9411L MRF947 MRF947A
Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale
BLF6G22-75 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-130 BLF6G22-180 BLF6G21-6 BLF6G21-6 BLF1822-10 BLF1822-10 BLF3G21-30 BLF3G21-30 BLF872 PRF957 BFG93A/X BLF6G20-180P BLF6G20-180P BLF6G20-75 BLF6G20-110 BLF6G20-110 BLF6G20-110 BLF6G20-140 BLF6G22-150P BLF1822-10 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-150P BLF6G20-180P BLF6G20-180P BLF878 BLF6G20-75 BLF6G20-110 BLF6G20-140 BLF6G20-75 BLF6G20-110 BLF6G20-110 BLF6G20-110 BLF6G20-140 BLM6G22-30 BLM6G22-30G BLF6G21-6 BLF1822-10 BLF6G22-45 BLF6G22-75 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-180P BLF6G22-180PN BLF6G27-10 BLF6G27LS-135 BLF6G27LS-75 BLF244 BLF177 BLF369 BLF378 BLF878 BLF6G20LS-140 BLF6G22-180 BLF6G20-110 BLF6G20LS-75 BLF6G20LS-110 BLF6G20-110 BLF6G20-110 BLF6G20-180 BLF6G20-230PRN BLF6G22LS-100 BLF6G22LS-100 BLF6G38-10G BLF6G38LS-50 BFQ67W BFS25A BFG520/X BFS520 PRF947
Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Broadcast WB trs 1-4 WB trs 1-4 Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Broadcast Broadcast Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station Base Station WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4
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Manufacturer type
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MRF9511L MRF957 MRFE6P3300H MRFE6S9125N MRFE6S9135HS MRFE6S9205HS MT4S200T MT4S200U MT4S34U MV2109G MW7IC2725N NESG3032M14 PRF134 PRF136 PRF947B PTF041501E-150W PTF041501F-150W PTF080101M-10W PTF080101S-10W PTF081301E-130W PTF081301F-130W PTF082001E-200W PTF180101 PTFA043002E-300W PTFA080551E-55W PTFA080551F-55W PTFA081501E-150W PTFA081501F-150W PTFA091201E-120W PTFA091201F-120W PZFJ108 PZFJ109 PZFJ110 R0605250L R0605300L R2005240 RN142G RN142S RN242CS RN731V RN739D RN739F S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740190 S8740220 S8740230 S949T S949TR S949TRW S974T S974T-GS08 S974TR S974TR-GS08 S974TRW S974TRW-GS08 SA701 SA701 SA741 SD702 SE701 SGA8343Z SK701 SK701 SK702 SM341 SM704 SM704 SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011
Freescale Freescale Freescale Freescale Freescale Freescale Toshiba Toshiba Toshiba ONSemicond. Freescale NEC POLYFET POLYFET Motorola Infineon Infineon Infineon Infineon Infineon Infineon Infineon Freescale Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Rohm Rohm Rohm Rohm Rohm Rohm Vishay Vishay Vishay Standard Vishay Vishay Vishay Standard Standard Standard Standard Standard Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay POLYFET POLYFET POLYFET POLYFET POLYFET Sirenza POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks
BFG540/X PRF957 BLF878 BLF6G10LS-135R BLF6G10LS-135R BLF6G10LS-200RN BFG424W BFG425W BFG410W BB182LX BLF6G27-10G BFU725F BLF242 BLF244 PRF947 BLF647 BLF647 BLF1043 BLF1043 BLF4G10-120 BLF4G10-120 BLF6G10-200 BLF6G21-10G BLF878 BLF6G10-45 BLF6G10-45 BLF6G10-160 BLF6G10-160 BLF4G10-120 BLF4G10-120 J108 J109 J110 BGY66B BGY68 BGY67A BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGD812 BGD814 BGD816L BF1109 BF1109R BF1109WR BF1109 BF1109 BF1109R BF1109R BF1109WR BF1109WR BLF145 BLF245 BLF175 BLF246B BLF245B BFG425W BLF544B BLF545 BLF546 BLF177 BLF147 BLF246 BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03
WB trs 1-4 WB trs 1-4 Broadcast Base Station Base Station Base Station WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Base Station WB trs 5-7 Broadcast Broadcast WB trs 1-4 Broadcast Broadcast Base Station Base Station Base Station Base Station Base Station Base Station Broadcast Base Station Base Station Base Station Base Station Base Station Base Station FET FET FET CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PD CATV PD CATV PD FET FET FET FET FET FET FET FET FET Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 5-7 Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode
SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SR341 SR341 SR401 SR401 SR401 SR703 SR704U SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856 SST4857 SST4859 SST4860 SST4861 ST704 ST744 ST744 SVC201SPA TBB1016 TMF3201J TMF3202Z TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TSDF54040 TSDF54040-GS08 TSDF54040X-GS08 TSDF54040XR-GS08 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112
Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard POLYFET POLYFET POLYFET Sanyo Renesas AUK AUK Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Vishay Vishay Vishay Vishay NEC NEC NEC NEC NEC NEC NEC NEC
BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 BLF378 BLF278 BLF248 BLF348 BLF368 BLF547 BLF548 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR56 BSR57 BSR58 BLF346 BLF276 BLF277 BB187 BF1204 BF1204 BF1202WR PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BF1102 BF1102 BF1102 BF1102R BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022
PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Broadcast Broadcast Broadcast Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC 85
5.2 Cross-references: NXP discontinued types versus NXP replacement types

In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band Switch Diode CATV Community Antenna Television System FET Field Effect Transistor Varicap Varicap Diode WB trs Wideband Transistor OM Optical Module
NXP discontinued type BA277-01 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851A BF851C BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93
Product family NXP BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs
Replacement type NXP BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861A BF861C BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A
NXP discontinued type BFR93AT BFR93R BFU510 BFU540 BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/01 BGD502/01 BGD502/01 BGD502/03 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N BGD802N/07 BGD802N/07 BGD804N BGD804N BGD804N/02 BGD804N/02 BGD902 BGD902/07 BGD902L BGD904 BGD904/02 BGD904/07 BGD904L BGD906 BGD906/02 BGE847BO BGE847BO BGE847BO
Product family NXP WB trs WB trs WB trs WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV
Replacement type NXP BFR93AW BFR93A BFU725F BFU725F BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD812 BGD812 BGD814 BGD814 BGD814 BGD814 BGD812 BGD902 BGD812 BGD814 BGD904 BGD904 BGD814 CGD942C BGD906 BGO827 BGO827 BGO827
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NXP discontinued type BGE847BO/FC BGE847BO/FC0 BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO847/01 BGO847/01 BGO847/FC0 BGO847/FC0 BGO847/FC01 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/01 BGY587/02 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B
Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV
Replacement type NXP BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO847 BGO847 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY785A BGY687 BGY687 BGE787B
NXP discontinued type BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC CGD914 CGY887A CGY887B GD923 ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4890 ON4990 PMBT3640/AT PN4392 PN4393
Product family NXP CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs FET FET
Replacement type NXP BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY885A BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 CGD1042H CGY1043 CGY1047 CGD942C BGY687 BGY687 BGY585A BGY588N BGY588N BGY885A BGY587 BGY1085A BGD712 BGD712 BGD885 BFS17 PMBF4392 PMBF4393
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Experience reducing RF component count in your wireless devices?

Look at RF ICs MMICs, chapter 3.4.1
6. Packing and packaging information

6.1 Packing quantities per package with relevant ordering code
Package SOD323/SC-76 Package dimensions 1.7 x 1.25 x 0.9 Packing quantity 3,000 10,000 3,000 10,000 8,000 20,000 15,000 3,000 10,000 5,000 5,000 10,000 10,000 1,000 4,000 100 3,000 10,000 1,000 4,000 3,000 10,000 3,000 10,000 2,500 3,000 10,000 2,500 3,000 6,000 4,000 2,500 490 4,000 5000 5000 6000 Product 12NC ending 115 135 115 135 315 335 315 215 235 112 412 116 126 115 135 112 215 235 115 135 115 135 115 135 118 115 135 118 115 118 115 118 551 518 115 132 118 Packing method 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch 12 mm tape and reel 12 mm tape and reel 4 tray/box 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel 12 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 8 mm tape and reel 16 mm tape and reel 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel 8 mm tape and reel 12 mm tape and reel 8 mm tape and reel 16 mm tape and reel tray multiple trays 8 mm tape and reel 8 mm tape and reel 12 mm tape and reel
SOD523/SC-79
1.2 x 0.8 x 0.6
SOD882T SOT23
1.0 x 0.6 x 0.4 2.9 x 1.3 x 0.9
SOT54
4.6 x 3.9 x 5.1
SOT89/SC-62 SOT115 SOT143(N/R)
4.5 x 2.5 x 1.5 44.5 x 13.65 x 20.4 2.9 x 1.3 x 0.9
SOT223/SC-73
6.7 x 3.5 x 1.6
SOT323/SC-70
2.0 x 1.25 x 0.9
SOT343(N/R) SOT360 SOT363/SC-88 SOT403 SOT416/SC-75 SOT616 SOT666 SOT724
2.0 x 1.25 x 0.9 6.5 x 4.4 x 0.9 2.0 x 1.25 x 0.9 5.0 x 4.4 x 0.9 1.6 x 0.8 x 0.75 4.0 x 4.0 x 0.85 1.6 x 1.2 x 0.7 8.7 x 3.9 x 1.47
SOT778 SOT886 SOT891 SOT908
6.0 x 6.0 x 0.85 1.45 x 1.0 x 0.5 1.0 x 1.0 x 0.5 3.0 x 3.0 x 0.85
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Package
Package dimensions 19.8 x 9.4 x 4.1
Packing quantity 60 300
Product 12NC ending 112 135
Packing method blister, tray reel
SOT502A
SOT502B
19.8 x 9.4 x 4.1
60 100
112 118
blister, tray reel
SOT538A
5.1 x 4.1 x 2.6
160
112
blister, tray
SOT539A
31.25 x 9.4 x 4.65
60 300
112 135
blister, tray reel
SOT540A
21.85 x 10.2 x 5.4
60
112
blister, tray
60 SOT608A 10.1 x 10.1 x 4.2 60 300
112 112 135
blister, tray blister, tray reel
60 SOT608B 10.1 x 10.1 x 4.2 100 300
112 118 135
blister, tray reel reel
SOT822-1
15.9 x 11 x 3.6
180
127
tube
SOT834-1
15.9 x 11 x 3.15
180
127
tube
SOT922-1
17.4 x 9.4 x 3.88
60
112
blister, tray
SOT975B
6.5 x 6.5 x 3.3
180 100
112 118
blister, tray Tape and reel
SOT975C
6.5 x 6.5 x 3.3
180 100
112 118
blister, tray Tape and reel
SOT979A
31.25 x 10.2 x 5.3
60
112
blister, tray
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6.2 Marking codes list

Search online on marking code: http://www.nxp.com/package/ In alphabetical order of marking code In case a % is given in the marking code, it means this type can be assembled at different assembly sites. Instead of a %, you will find: p = made in Hong-Kong t = made in Malaysia W = made in China
Marking code %1W %3A %4A %5A %6G %6J %6K %6S %6W %6X %6Y %AB %M1 %M2 %M3 %M4 %M5 %M6 %M7 %M8 %M9 %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MN %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ 1 1B% 1C% 1N% 2 2A% 2L 2N 2R 4A 4K% 4L% 4W% Type BAP51-05W BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 PMBF4392 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BF908 BF908R BF909 BF909R BF909A BF909AR BF904A BF904AR BSS83 BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BA277 BGA2717 BAP50-05 BAP70-04W BB182 BF862 BF1208 BF1206F BF1207F BF1208D BAP64-04 BAP50-04 BAP64-04W Package SOT323 SOT89 SOT89 SOT89 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOD523 SOT363 SOT23 SOT323 SOD523 SOT23 SOT666 SOT666 SOT666 SOT666 SOT23 SOT23 SOT323 Marking code 5K% 5W% 6F% 6K% 6W% 7 7K% 8 8K% 9 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 50% A1 A1 A1 A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7% A8 A8% A8% A9 B3 B6B6% Type BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BA891 BAP65-05 BB178 BAP70-05 BB179 BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA591 BB208-02 BGA2001 BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGU7003 BGA2715 BFU725F Package SOT23 SOT323 SOT23 SOT23 SOT323 SOD523 SOT23 SOD523 SOT23 SOD523 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD323 SOD523 SOT343 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343 SOD323 SOT343 SOT363 SOD323 SOT891 SOT363 SOT343F Marking code B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D2 D3 D4% E1% E1% E1% E2% E2% E3% E6% FB FF FG G2 G2% G3% G4% G5% K1 K2 K4 K5 K6 K7 K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 Type BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BAP63-03 BAP65-03 BFR30/B BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFG17A BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 BAP1321-02 BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX Package SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOD323 SOD323 SOT23 SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT143 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523 SOD882T SOD882T SOD523 SOT363 SOD882T SOT363 SOD882T SOT363 SOD882T SOD882T SOT363 SOD882T
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Marking code L8 L9% LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M3% M33 M34 M35 M6% M65 M66 M67 M84 M85 M86 MB MC MD ME MF MG MG% MH MH% MK ML MO% MO% N N0
Type BB187LX BF1208 BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BFT46 BF861A BF861B BF861C BF1205C BF545A BF545B BF545C BF556A BF556B BF556C BF998WR BF904WR BF908WR BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998 BF998R BB181 BFR505T
Package SOD882T SOT363 SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT343 SOT343 SOT343 SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143 SOT143 SOD523 SOT416
Marking code N0% N0% N1 N2 N2% N2% N3 N4 N4 N4% N6% N7 N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6 P7
Type BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFG520W BFG520W/X BFQ540 BFS540 BFS25A BFG540W/X BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BFG21W BB131 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W BB147
Package SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT343 SOT343 SOT89 SOT323 SOT323 SOT343 SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT343 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343 SOD323
Marking code P8 P9 PB PC PE PF PL R2% R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% T5 V1 V1% V10 V2% V2% V3% V4% V6% V8 W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1%
Type BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BB201 BFG10W/X BFG25AW/X BFT25 BFT25A BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W
Package SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT343 SOT343 SOT23 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323
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7. Abbreviations
AM ASIC BPF BUC CATV CDMA CMOS CQS DAB DECT DSB DVB EDGE ESD FET FM GaAs GaN Gen GPS GSM HBT HDTV HF HFC HFET HPA HVQFN IF ISM LDMOS LNA LNB LO LPF MESFET Amplitude Modulation Application Specific Integrated Circuit Band Pass Filter Block Up Converter Community Antenna Television Code Division Multiple Access Complementary Metal Oxide Semiconductor Customer Qualification Samples Digital Audio Broadcasting Digital Enhanced Cordless Telecommunications Digital Signal Processor Digital Video Broadcasting Enhanced Data Rates for GSM Evolution Electro Static Device Field Effect Transistor Frequency Modulation Gallium Arsenide Gallium Nitride Generation Global Positioning System Global System for Mobile communications Heterojunction Bipolar Transistor High Definition Television High Frequency (3-30 MHz) Hybrid Fiber Coax Heterostructure Field Effect Transistor High Power Amplifier Plastic thermally enHanced Very thin Quad Flat pack No leads Intermediate Frequency Industrial, Scientific, Medical - reserved frequency bands Laterally Diffused Metal-Oxide-Semiconductor Low Noise Amplifier Low Noise Block Local Oscillator Low Pass Filter Metal Semiconductor Field Effect Transistor MMIC MOSFET MPA NF PA PAR PEP pHEMT PLL QUBiC RF RFS RoHS RX SARFT SER SiGe:C SMD SPDT TD-SCDMA TCAS TMA TX UHF UMTS VCO VGA VHF VoIP VSAT WCDMA WiMAX WLAN Monolithic Microwave Integrated Circuit MetalOxideSemiconductor Field Effect Transistor Medium Power Amplifier Noise Figure Power Amplifier Peak to Average Ratio Peak Envelope Power pseudomorphic High Electron Mobility Transistor Phase Locked Loop Quality BiCMOS Radio Frequency Release for Supply Restriction of Hazardous Substances Receive State Administration for Radio, Film and Television Serializer Sillicon Germanium Carbon Surface Mounted Device Single Pole, Double Throw Time Division-Synchronous Code Division Multiple Access Traffic Collision Avoidance Systems Tower Mounted Amplifier Transmit Ultra High Frequency (470-860MHz) Universal Mobile Telecommunications System Voltage Controlled Oscillator Variable Gain Amplifier Very High Frequency (30-300MHz) Voice over Internet Protocol Very Small Aperture Terminal Wideband Code Division Multiple Access Worldwide Interoperability for Microwave Access Wireless Local Area Network
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8. Contacts and web links

How to contact your authorized distributor or local NXP representative?
Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist South America: http://www.nxp.com/profile/sales/southamerica_dist
NXP RF Schottky diodes: http://www.nxp.com/rfschottkydiodes NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP RF power & base stations: http://www.nxp.com/rfpower NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/all_appnotes NXP cross-references: http://www.nxp.com/products/xref NXP green packaging: http://www.nxp.com/green_roadmap NXP end-of-life: http://www.nxp.com/products/eol NXP Quality Handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP packaging: http://www.nxp.com/package NXP sales offices and distributors: http://www.nxp.com/profile/sales
NXP Semiconductors RF Manual 12th edition 95
Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica South America: http://www.nxp.com/profile/sales/southamerica
Web links NXP Semiconductors: http://www.nxp.com NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes
9. Product index
Type
BA277 BA591 BA792 BA891 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP51LX BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM BAT17 BAT18 BB131 BB135 BB145B BB148 BB149 BB149A BB152 BB153 BB156 BB178 BB178LX BB179 BB179B BB179BLX BB179LX BB181 BB181LX BB182 BB182LX BB184 BB184LX BB185LX BB187 BB187LX BB189 BB198 BB199 BB201 BB202 BB202LX
Portfolio chapter
3.2.1 3.2.1 3.2.1 3.2.1 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.4 3.2.3 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1
Type
BB207 BB208-02 BB208-03 BBY40 BF1100 BF1100R BF1100WR BF1101 BF1101R BF1101WR BF1102 BF1105 BF1105R BF1105WR BF1107 BF11085) BF1108R5) BF1109 BF1109R BF1109WR BF1201 BF1201R BF1201WR BF1202 BF1202R BF1202WR BF1203 BF1204 BF1205 BF1205C BF1206 BF1206 BF1207 BF1208 BF1208D BF1210 BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 BF245A BF245B BF245C BF5101) BF5111) BF5121) BF5131) BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BF862 BF904 BF904R BF904WR BF908 BF908R BF908WR BF909 BF909R BF909WR BF991 BF992 BF994S BF996S BF998 BF998R BF998WR BFG10(X) BFG10W/X
Portfolio chapter
3.2.1 3.2.1 3.2.1 3.2.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.3.1 3.3.1
Type
BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505(/X) BFG505W/X BFG520(/X) BFG520W(/X) BFG540(/X) BFG540W(/X/XR) BFG541 BFG590(/X) BFG591 BFG67(/X) BFG92A(/X) BFG93A(/X) BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ540 BFQ591 BFQ67 BFQ67W BFR106 BFR30 BFR31 BFR505 BFR505T BFR520 BFR520T BFR540 BFR92A BFR92AW BFR93A(R) BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT46 BFT92 BFT92W BFT93 BFT93W BFU725F BGA2001 BGA2003 BGA2011 BGA2012 BGA2022 BGA2031/1 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715
Portfolio chapter
3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1
Type
BGA2716 BGA2717 BGA2748 BGA2771 BGA2776 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 BGA7133 BGD502 BGD702 BGD702N BGD704 BGD712 BGD712C BGD714 BGD802 BGD804 BGD812 BGD814 BGD816L BGD885 BGE787B BGE788 BGE788C BGE885 BGM1011 BGM1012 BGM1013 BGM1014 BGO807 BGO807/FC0 BGO807/SC0 BGO807C BGO807C/FC0 BGO807C/SC0 BGO827 BGO827/SC0 BGU7003 BGU7005 BGY1085A BGY585A BGY587 BGY587B BGY588C BGY588N BGY66B BGY67 BGY67A BGY68 BGY685A BGY687 BGY785A BGY787 BGY835C BGY883 BGY885A BGY887 BGY887B BGY888 BLA6H0912-500 BLA6H1011-600 BLD6G21L-50 BLD6G21LS-50 BLD6G22L-50 BLD6G22LS-50
Portfolio chapter
3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.4.1 3.4.1 3.4.1 3.4.1 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.6.4 3.4.1 3.4.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.1 3.6.1 3.6.1 3.6.1 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.7.3 3.7.3 3.7.1 3.7.1 3.7.1 3.7.1
Type
BLF571 BLF573 BLF573S BLF574 BLF578 BLF645 BLF6G10-135RN BLF6G10-160RN BLF6G10-200RN BLF6G10-45 BLF6G10LS135RN BLF6G10LS160RN BLF6G10LS200RN BLF6G10S-45 BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BLF6G20-40 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS180RN BLF6G20LS-75 BLF6G20S-45 BLF6G21-10G BLF6G22-180PN BLF6G22-180RN BLF6G22-45 BLF6G22LS-100 BLF6G22LS-130 BLF6G22LS180RN BLF6G22LS-75 BLF6G22S-45 BLF6G27-10 BLF6G27-10G BLF6G27-135 BLF6G27-45 BLF6G27-75 BLF6G27LS-135 BLF6G27LS-75 BLF6G27S-45 BLF6G38-10 BLF6G38-100 BLF6G38-10G BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6G38S-25 BLF7G22L-130 BLF7G22LS-130 BLF7G27L-200P BLF7G27LS-200P BLF871 BLF871S BLF878 BLF881 BLF888 BLL6H0514-25 BLL6H1214-500 BLM6G10-30 BLM6G10-30G BLM6G22-30 BLM6G22-30G BLS6G2731-120 BLS6G2731-6G BLS6G2731S-120 BLS6G2933S-130 BLS6G3135-120 BLS6G3135-20 BLS6G3135S-120 BLS6G3135S-20
Portfolio chapter
3.7.2 3.7.2 3.7.2 3.7.2 3.7.2 3.7.2 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.1 3.7.2 3.7.2 3.7.2 3.7.2 3.7.2 3.7.3 3.7.3 3.7.1 3.7.1 3.7.1 3.7.1 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3 3.7.3
Type
BLT50 BLT70 BLT80 BLT81 BSR56 BSR57 BSR58 BSS83 CGD1040Hi CGD1042H CGD1042Hi CGD1044H CGD1044Hi CGD914 CGD923 CGD942C CGD944C CGY887A CGY887B CGY888C J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 OM7650 OM7670 PBR941 PBR951 PMBD353 PMBD354 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1003HN TFF1006HN
Portfolio chapter
3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.5.1 3.5.2 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.2 3.6.2 3.6.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.6.2 3.6.2 3.3.1 3.3.1 3.2.4 3.2.4 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.4.2 3.4.2
TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN
3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2 3.4.2
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Experience high-performance analog

NXPs RF Manual makes design work much easier

RF Manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 12th edition

NXP Semiconductors RF Manual 12th edition

NXP Semiconductors RF Manual 12th edition

Experience faster time to first fix with GPS LNAs

1. Applications & recommended products

1.1 Global Positioning System (GPS)

Product highlight: BGU7005 SiGe:C MMIC

NXP Semiconductors RF Manual 12th edition

low pass lter antenna SPDT switch Tx medium power amplier

APPLICATION CHIP SET

Rx bandpass lter LNA SPDT

Function Medium power amplifier

Medium power amplifier

Product highlight: BGA6289 MMIC medium power amplifier

} 17 dBm output power } Single supply voltage needed

NXP Semiconductors RF Manual 12th edition

1.3 Low-cost cellular phone front-end for ODM/CEM designs

buffer VCO LOW FREQUENCY CHIPSET

power driver amplifier

Varicap diodes Varicap diodes

Product highlight: BGA2771 MMIC General - purpose wideband amplifier

1.4 Walkie-talkie, RF generic front-end with a single antenna

buffer SPDT switch VCO LOW FREQUENCY CHIP SET

Function Power amplifier Function VCO

* = also available in ultra small leadless package SOD882T

Product Varicap diodes

VCO varicap diodes

Product highlight: PRF957 silicon NPN UHF wideband transistor

NXP Semiconductors RF Manual 12th edition

1.5 Cordless Phone (Analog)

buffer SPDT switch VCO

Product RF bipolar transistor Wideband transistor

Product RF bipolar transistor Wideband transistor

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

* = also available in ultra small leadless package SOD882T.

Product highlight: BAP64xx PIN diode for RF switch

Cordless Phone (DECT front-end)

(DECT in-house basestation)

buffer SPDT switch VCO

Product RF bipolar transistor RF transistor MMIC

Wideband transistor SiGe:C transistor SiGe:C MMIC

Product RF bipolar transistor RF transistor MMIC

Wideband transistor SiGe:C transistor SiGe:C MMIC

* = also available in ultra small leadless package SOD882T.

Product RF bipolar transistor MMIC Wideband transistor Linear mixer

Function VCO Function

Product Varicap diodes Product RF bipolar transistor RF transistor

Wideband transistor SiGe:C transistor

Product highlight: BFG425W NPN wideband transistor

NXP Semiconductors RF Manual 12th edition

1.6 E-metering, RF generic front-end with a single antenna

buffer SPDT switch VCO E-METERING CHIP SET

Function Medium power amplifier

Product RF bipolar transistor MMIC

Wideband transistor Amplifier Gen. purpose wideband ampl.

* = also available in ultra small leadless package SOD882T.

Product Varicap diodes

VCO varicap diodes

Product highlight: BGA7127 MMIC medium power amplifier

1.7 Wireless Microphone